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| Number | Title | Issue Date |
| 7442413 | Methods and apparatus for treating a work piece with a vaporous element Methods and apparatus for controlling and delivering a vaporous element or compound, for example, selenium or sulfur, from a solid source to a work piece are provided. The methods and apparatus may be used in photovoltaic cell manufacturing. The apparatus may compri... | 10/28/2008 |
| 7374642 | Treatment process for improving the mechanical, catalytic, chemical, and biological activity of surfaces and articles treated therewith A continuous, uninterrupted two-step treatment process capable of forming nanometer scale physical structures on the surface of articles fabricated from metallic, ceramic, glass, or plastic materials, and then depositing a thin conformal coating on the nanostructure... | 05/20/2008 |
| 7311947 | Laser assisted material deposition A method of forming a film on a substrate includes activating a gas precursor to form a material on the substrate by irradiating the gas precursor with electromagnetic energy at a frequency tuned to an absorption frequency of the gas precursor. ... | 12/25/2007 |
| 7279078 | Thin-film coating for wheel rims A process for coating a non-uniform, thin-film, dichroic pattern to a wheel rim or motorcycle part. The thin-film coating adds a colored or iridescent pattern to the wheel rim or motorcycle part, while maintaining other characteristics, such as brilliance, shine, du... | 10/09/2007 |
| 7166732 | Copper (I) compounds useful as deposition precursors of copper thin films Copper (I) amidinate precursors for forming copper thin films in the manufacture of semiconductor devices, and a method of depositing the copper (I) amidinate precursors on substrates using chemical vapor deposition or atomic layer deposition processes. ... | 01/23/2007 |
| 7156960 | Method and device for continuous cold plasma deposition of metal coatings A method for the deposition of a metal layer on a substrate (1) uses a cold plasma inside an enclosure (7) heated to avoid the formation of a metal deposit at its surface. The enclosure has an inlet (21) and an outlet (22) for the substra... | 01/02/2007 |
| 7112690 | Volatile noble metal organometallic complexes A series of noble metal organometallic complexes of the general formula (I): MLaXb(FBC)c, wherein M is a noble metal such as iridium, ruthenium or osmium, and L is a neutral ligand such as carbonyl, alkene or diene; X is an anionic l... | 09/26/2006 |
| 7084288 | Organometallic precursor for forming metal film or pattern and method of forming metal film or pattern using the same The object of this invention is to provide an organometallic precursor for forming a metal film or pattern and a method of forming the metal film or pattern using the same. More particularly, the present invention provides an organometallic precursor containing a hy... | 08/01/2006 |
| 7064224 | Organometallic complexes and their use as precursors to deposit metal films This invention is related to organometallic precursors and deposition processes for fabricating conformal metal containing films on substrates such as silicon, metal nitrides and other metal layers. The organometallic precursors are N,N′-alkyl-1,1-alkylsily... | 06/20/2006 |
| 7033650 | Method of producing a nanotube layer on a substrate In a method of producing a nanotube layer on a substrate by using a CVD process, the substrate is placed in a reaction chamber, which is flushed with a carbon-containing gas. Subsequently, the substrate is heated by an induction process to a temperature at which car... | 04/25/2006 |
| 7002032 | Organic compound for CVD raw material and method of manufacturing metallic or metallic compound thin film using the organic compound The present invention provides an organic compound for CVD raw material prepared by mixing a first organometallic compound and at least one second organometallic compound, said first organometallic compound having a central metal atom and at least one ligand coordin... | 02/21/2006 |
| 6998497 | Metal bis-triflimide compounds and methods for synthesis of metal bis-triflimide compounds A metal bis-triflimide compound having the formula: [Mx]n+[(N(SO2CF3)2)(nx−yz)](nx−yz)−[Ly]z− where M is a metal selected from the metals in groups 5 to 10, 12... | 02/14/2006 |
| 6992202 | Single-source precursors for ternary chalcopyrite materials, and methods of making and using the same A single source precursor for depositing ternary I-III-VI2 chalcopyrite materials useful as semiconductors. The single source precursor has the I-III-VI2 stoichiometry “built into” a single precursor molecular structure which degrades on he... | 01/31/2006 |
| 6992200 | Copper complexes and process for formation of copper-containing thin films by using the same Copper-containing thin films can be industrially advantageously formed by chemical vapor deposition using as the copper source a divalent copper complex bearing β-diketonato ligands having silyl ether linkage. A representative example of the divalent copper complex... | 01/31/2006 |
| 6989457 | Chemical vapor deposition precursors for deposition of tantalum-based materials Tantalum precursors suitable for chemical vapor deposition of tantalum-containing material, e.g., tantalum, TaN, TaSiN, etc., on substrates. The tantalum precursors are substituted cyclopentadienyl tantalum compounds. In one aspect of the invention, such compounds a... | 01/24/2006 |
| 6956127 | Alkyl group VA metal compounds Disclosed are methods of preparing monoalkyl Group VA metal dihalide compounds in high yield and high purity by the reaction of a Group VA metal trihalide with an organo lithium reagent or a compound of the formula RnM1X3−n, where ... | 10/18/2005 |
| 6919468 | Asymmetric group 8 (VIII) metallocene compounds Asymmetric, disubstituted metallocene compounds have the general formula CpMCp′ where M is a metal selected from the group consisting of Ru, Os and Fe; Cp is a first substituted cyclopentadienyl or indenyl moiety that includes at least one substituent group D... | 07/19/2005 |
| 6884902 | Organometallic iridium compound, process of producing the same, and process of producing thin film An organometallic compound having a low melting point, excellent vaporization characteristic and low film formation temperature on a substrate, for forming an iridium-containing thin film by the CVD process is provided. The organometallic iridium compound is represe... | 04/26/2005 |
| 6884901 | Methods for making metallocene compounds A method for producing Group 8 (VIII) metallocene or metallocene-like compounds employs a compound that includes a Cp′ anion, such as found, together with a counterion, in a cyclopentadienide or cyclopentadienide-like salt. In one embodiment, the method includes r... | 04/26/2005 |
| 6838573 | Copper CVD precursors with enhanced adhesion properties This invention relates to copper(+1)(β-diketonate)(L) and related copper complexes such as copper (+1)(β-ketoiminate)(L) represented by the formula: wherein X represents O or NR9, R1 and R3... | 01/04/2005 |
| 6831188 | Dihydrocarbylamino metal compounds This invention provides a process of preparing dihydrocarbylamido metal compounds. This process comprises bringing together, in a liquid reaction medium, at least one metal halide, MX4, where M is titanium, zirconium, or hafnium, and X is a halogen atom, ... | 12/14/2004 |
| 6822107 | Chemical vapor deposition precursors for deposition of copper Copper precursors of the formula (I): wherein: Cu is Cu(I) or Cu(II); x is an integer having a value of from 0 to 4; each of R, R′ and R″ ... | 11/23/2004 |
| 6818783 | Volatile precursors for deposition of metals and metal-containing films This invention is directed to a group of novel homologous eight membered ring compounds having a metal, such as copper, reversibly bound in the ring and containing carbon, nitrogen, silicon and/or other metals. A structural representation of the compounds of this in... | 11/16/2004 |
| 6777565 | Organometallic compounds and their use as precursors for forming films and powders of metal or metal derivatives Disclosed are organometallic compounds derived from Groups VIIb, VIII, IX, and X metals useful as precursors for the formation of metal containing powders and for the chemical deposition of the metals on substrates, particularly for the chemical vapor deposition of ... | 08/17/2004 |
| 6767830 | Br2SbCH3 a solid source ion implant and CVD precursor A volatile solid-source novel antimony precursor, Br2SbCH3, that may be utilized in semiconductor processing chambers for depositing antimony on a substrate by deposition methods, e.g., chemical vapor deposition, ion implantation, molecular bea... | 07/27/2004 |
| 6753437 | CVD material compound and method for manufacturing the same, and CVD method of iridium or iridium compound thin film The present invention relates to a raw material for CVD comprising an organic iridium compound as a main component, said organic iridium compound being tris(2,4-octanedionato)iridium represented by Formula 1. Particularly preferably, the raw material for CVD consist... | 06/22/2004 |
| 6743933 | Process of forming thin film and precursor for chemical vapor deposition A process of producing a strontium titanate, barium titanate or barium strontium titanate thin film by chemical vapor deposition which comprises using a titanium compound represented by formula (I): wherein R1 | 06/01/2004 |
| 6689427 | Group IV metal precursors and a method of chemical vapor deposition using the same An organometallic precursor of a formula M(L)2 for use in formation of metal oxide thin films, in which M is a group IV metal ion having a charge of +4 and L is a tridentate ligand having a charge of -2, the ligand being represented by the foll... | 02/10/2004 |
| 6683198 | Group(III)-metal-hydrides with a guanidino-type ligand A compound of formula (I) ##STR1## wherein X is aluminium, gallium or indium; each Y, which may be the same or different, is nitrogen or phosphorus; R1 and R2, which may be the same or different, are hydrogen, halogen or alkyl... | 01/27/2004 |
| 6620956 | Nitrogen analogs of copper II ଲ-diketonates as source reagents for semiconductor processing Nitrogen containing analogs of Copper II ଲ-diketonates which analogs are more stable source reagents for copper deposition when substantially free of solvents of excess ligands. The nitrogen containing analogs replace --O-- with --N(R")-- wherein R"... | 09/16/2003 |
| 6610180 | Substrate processing device and method A substrate processing device is provided in which an interior rotating body for a substrate holder, provided in the interior of a vacuum chamber, and an external rotating body, provided in the exterior of said vacuum chamber, are magnetically coupled, an... | 08/26/2003 |
| 6605735 | Ruthenium complex, process for producing the same and process for producing thin film A ruthenium-containing thin film is produced by the chemical vapor deposition method etc. with the use of an organometallic ruthenium compound represented by the general formula (1), specific example of which is (2,4-dimethyl-pentadienyl)(ethylcyclopentad... | 08/12/2003 |
| 6589868 | Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput Embodiments of the present invention include a method of depositing an improved seasoning film. In one embodiment the method includes, prior to performing a substrate processing operation, forming a layer of silicon over an interior surface of the substra... | 07/08/2003 |
| 6582780 | Substrate support for use in a hot filament chemical vapor deposition chamber A carbon deposition chamber is provided with several advantages. The substrate and the heating filaments are cooled to a temperature to prevent carbonization by permitting a cooling fluid to be passed through tubing connected to these elements in a heat s... | 06/24/2003 |
| 6559328 | Indium source reagent compositions, and use thereof for deposition of indium-containing films on substrates and ion implantation of indium-doped shallow junction microelectronic structures An indium precursor composition having utility for incorporation of indium in a microelectronic device structure, e.g., as an indium-containing film on a device substrate by bubbler or liquid delivery MOCVD techniques, or as a dopant species incorporated ... | 05/06/2003 |
| 6555701 | CVD material compound and method for manufacturing the same and CVD method of ruthenium or ruthenium compound thin film The present invention provides a CVD material compound based on an organic ruthenium compound, the organic ruthenium compound consisting of one of cis and trans isomers of tris (2,4-octa-dionato) ruthenium (III). The organic ruthenium compound which consi... | 04/29/2003 |
| 6548685 | Process for preparing tantalum alkoxides and niobium alkoxides The invention relates to a process for preparing niobium(V) alkoxides and tantalum(V) alkoxides, in particular niobium(V) ethoxide and tantalum(V) ethoxide, by reacting NbCl5 or TaCl5 with an appropriate alcohol in the presence of am... | 04/15/2003 |
| 6534666 | Use of water and acidic water to purify liquid MOCVD precursors This invention relates to an improvement in a purification process for producing those liquid copper based complexes of ଲ-diketones and, particularly the monovalent copper complexes of ଲ-diketones, which are suited for application by chemical ... | 03/18/2003 |
| 6528115 | Hard carbon thin film and method of forming the same A hard carbon thin film formed on a substrate has a graded structure in which a ratio of sp2 to sp3 carbon-carbon bonding in the thin film decreases in its thickness direction from a thin film/substrate interface toward a surface of ... | 03/04/2003 |
| 6517913 | Method and apparatus for reducing perfluorocompound gases from substrate processing equipment emissions An apparatus for converting PFC gases exhausted from semiconductor processing equipment to less harmful, non-PFC gases. One embodiment of the apparatus includes a silicon filter and a plasma generation system. The plasma generation system forms a plasma f... | 02/11/2003 |
