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| Number | Title | Issue Date |
| 7390731 | Method of depositing an oxide layer on a substrate and a photovoltaic cell using said substrate The process according to the invention makes it possible to deposit a transparent conductive oxide film on a toughened glass substrate placed inside a chamber. It consists in providing sources containing an oxygen-based liquid compound, a liquid compound of the meta... | 06/24/2008 |
| 7371286 | Wiring repair apparatus A wiring repair apparatus includes an XY stage on which a substrate is placed, a laser source unit disposed above the XY stage, first and second gas windows disposed between the laser source unit and the XY stage, and first and second CVD gas units. The laser source... | 05/13/2008 |
| 7351658 | Process for producing yttrium oxide thin films This invention concerns a process for producing oxide thin film on a substrate by an ALD type process. According to the process, alternating vapour-phase pulses of at least one metal source material, and at least one oxygen source material are fed into a reaction sp... | 04/01/2008 |
| 7341959 | Plasma enhanced atomic layer deposition system and method A method for depositing a film on a substrate using a plasma enhanced atomic layer deposition (PEALD) process includes disposing the substrate in a process chamber configured to facilitate the PEALD process, wherein the process chamber includes a substrate zone prox... | 03/11/2008 |
| 7338582 | Method for manufacturing manganese oxide nanostructure and oxygen reduction electrode using said manganese oxide nanostructure It is an object of the present invention to provide an oxygen reduction electrode having excellent oxygen reduction catalysis ability. In a method of manufacturing a manganese oxide nanostructure having excellent oxygen reduction catalysis ability and composed of se... | 03/04/2008 |
| 7319709 | Creating photon atoms A narrow linewidth fluorescent emitter can incorporate a chromophore into a microcavity that can support low-order optical modes. ... | 01/15/2008 |
| 7311947 | Laser assisted material deposition A method of forming a film on a substrate includes activating a gas precursor to form a material on the substrate by irradiating the gas precursor with electromagnetic energy at a frequency tuned to an absorption frequency of the gas precursor. ... | 12/25/2007 |
| 7311946 | Methods for depositing metal films on diffusion barrier layers by CVD or ALD processes A process is described for depositing a metal film on a substrate surface having a diffusion barrier layer deposited thereupon. In one embodiment of the present invention, the process includes: providing a surface of the diffusion barrier layer that is substantially... | 12/25/2007 |
| 7214327 | Anisotropic dry etching of Cu-containing layers A method and apparatus for dry etching pure Cu and Cu-containing layers (220, 310) for manufacturing integrated circuits. The invention uses a directional beam of O-atoms with high kinetic energy (340) to oxidize the Cu and Cu-containing layers, and et... | 05/08/2007 |
| 7211300 | Method and apparatus for performing laser CVD An element is deposited by flowing a gas through a solid donor compound that includes the element, and over a substrate. The flow of gas deposits a film of a few monolayers of donor compound on the substrate. An optical radiation source (e.g., a femtosecond laser) w... | 05/01/2007 |
| 7183008 | Electroluminescent materials A novel electroluminescent compound which emits blue or blueish purple light is a complex of a lanthanide or actinide and an organic complex e.g. mono(bathophenanthroline) thoriumIV chloride or mono(tripyridyl)yttrium chloride. ... | 02/27/2007 |
| 7147530 | Electroluminescence display device and method of manufacturing the same An object of the present invention is to provide an EL display device, which has a high operating performance and reliability. A third passivation film 45 is disposed so as to be in contact with an EL element 203 which comprises a pixel electrode (anod... | 12/12/2006 |
| 7135404 | Method for applying metal features onto barrier layers using electrochemical deposition The present invention is directed to a process for producing structures containing metallized features for use in microelectric workpieces. The process treats a barrier layer to promote the adhesion between the barrier layer and the metallized feature. Suitable mean... | 11/14/2006 |
| 7125588 | Pulsed plasma CVD method for forming a film A method of forming an insulating ceramic film or a metallic film by a plasma CVD process in which a high density plasma is generated in the presence of a magnetic field wherein the electric power for generating the plasma has a pulsed waveform. The electric power t... | 10/24/2006 |
| 7118781 | Methods for controlling formation of deposits in a deposition system and deposition methods including the same A method for controlling parasitic deposits in a deposition system for depositing a film on a substrate, the deposition system defining a reaction chamber for receiving the substrate and including a process gas in the reaction chamber and an interior surface contigu... | 10/10/2006 |
| 7112453 | Retentate chromatography and protein chip arrays with applications in biology and medicine This invention provides methods of retentate chromatography for resolving analytes in a sample. The methods involve adsorbing the analytes to a substrate under a plurality of different selectivity conditions, and detecting the analytes retained on the substrate by d... | 09/26/2006 |
| 7101813 | Atomic layer deposited Zr-Sn-Ti-O films A dielectric film containing atomic layer deposited Zr—Sn—Ti—O and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Depositing titanium and ox... | 09/05/2006 |
| 7087104 | Preparation of electroless deposition solutions A system and method for storing a solution containing a subset of a group consisting of a metal ion, a complexing agent, an ammonium salt, and a strong base and then nearer to a time of use in an electroless deposition process, using the solution to form an electrol... | 08/08/2006 |
| 7037560 | Film forming method, and film modifying method A film forming and film modifying method utilizing a film forming apparatus which has an alcohol supply unit to form a metal oxide film on a semiconductor wafer in a vacuum atmosphere in which a vaporized metal oxide film material and a vaporized alcohol exist. The ... | 05/02/2006 |
| 6998346 | Method for the patterned, selective metallization of a surface of a substrate The present invention provides a method for the patterned metallization of a surface of a substrate, comprising the steps of preheating the substrate to a temperature which is below a deposition temperature of a predetermined metal dissolved in a fluid provided abov... | 02/14/2006 |
| 6958302 | Atomic layer deposited Zr-Sn-Ti-O films using TiI4 A dielectric film containing Zr—Sn—Ti—O formed by atomic layer deposition using a TiI4 precursor and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable usin... | 10/25/2005 |
| 6924195 | Methods of forming metal-comprising materials and capacitor electrodes; and capacitor constructions The invention includes a method of forming a metal-comprising mass for a semiconductor construction. A semiconductor substrate is provided, and a metallo-organic precursor is provided proximate the substrate. The precursor is exposed to a reducing atmosphere to rele... | 08/02/2005 |
| 6887595 | Thermal barrier coatings having lower layer for improved adherence to bond coat A thermal barrier coatings for the underlying substrate of articles that operate at, or are exposed to, high temperatures. The thermal barrier coating includes a zirconia-containing upper layer wherein the zirconia is stabilized in the cubic crystalline phase to red... | 05/03/2005 |
| 6808758 | Pulse precursor deposition process for forming layers in semiconductor devices A process for producing thin layers in electronic devices such as integrated circuit chips, is provided. The process includes the steps of injecting a precursor fluid into a thermal processing chamber containing a substrate, such as a semiconductor wafer. The precur... | 10/26/2004 |
| 6683198 | Group(III)-metal-hydrides with a guanidino-type ligand A compound of formula (I) ##STR1## wherein X is aluminium, gallium or indium; each Y, which may be the same or different, is nitrogen or phosphorus; R1 and R2, which may be the same or different, are hydrogen, halogen or alkyl... | 01/27/2004 |
| 6664030 | System for and method of constructing an alternating phase-shifting mask An exemplary method of constructing an alternating phase-shifting mask is described. This method can include providing a vapor in a vapor chamber containing a mask blank, and applying a laser to selected areas of the mask blank to deposit material on the ... | 12/16/2003 |
| 6656539 | Method and apparatus for performing laser CVD An element is deposited by flowing a gas through a solid donor compound that includes the element, and over a substrate. The flow of gas deposits a film of a few monolayers of donor compound on the substrate. An optical radiation source (e.g., a femtoseco... | 12/02/2003 |
| 6511718 | Method and apparatus for fabrication of thin films by chemical vapor deposition A venturi mist generator creates a mist comprising droplets having a mean diameter less than one micron from liquid precursors containing multi-metal polyalkoxide compounds. The mist is mixed and then passed into a gasifier where the mist droplets are gas... | 01/28/2003 |
| 6391528 | Methods of making wire grid optical elements by preferential deposition of material on a substrate A method for making wire grid optical elements by preferentially depositing material on a substrate is disclosed. Material can be preferentially deposited by directing an electromagnetic interference pattern on to a substrate to selectively heat areas of ... | 05/21/2002 |
| 6299739 | Method of forming metal wiring film This invention provides a method of forming a metal wiring film excellent in EM resistance and low electric resistance. In a method of forming a wiring structure by filming and covering the surface of the insulating film of a substrate to be treated having a h... | 10/09/2001 |
| 6284655 | Method for producing low carbon/oxygen conductive layers The present invention provides a method for forming a substantially carbon- and oxygen-free conductive layer, wherein the layer can contain a metal and/or a metalloid material. According to the present invention, a substantially carbon- and oxygen-free co... | 09/04/2001 |
| 6281125 | Methods for preparing ruthenium oxide films The present invention provides methods for the preparation of ruthenium oxide films from liquid ruthenium complexes of the formula (diene)Ru(CO)3 wherein "diene" refers to linear, branched, or cyclic dienes, bicyclic dienes, tricyclic dienes, f... | 08/28/2001 |
| 6265033 | Method for optically coupled vapor deposition A system for the depositing of insulating, conducting, or semiconducting thin films is disclosed, in which the sputtering plasma is irradiated with a transverse, adjustable ultraviolet emission produced by an ultraviolet optical cavity containing a lamp d... | 07/24/2001 |
| 6248658 | Method of forming submicron-dimensioned metal patterns Submicron-dimensioned metallization patterns are formed on a substrate surface by a photolytic process wherein portions of a metal-compound containing fluid layer on the substrate surface which are exposed through a pattern of submicron-sized openings in ... | 06/19/2001 |
| 6156165 | Method of forming a metallization feature on an edge of an IC chip An integrated circuit package derives increased mechanical robustness and electrical reliability consistent with increased heat dissipation capacity by edge bonding of integrated circuit chips onto a substrate such as a chip, board, module or another inte... | 12/05/2000 |
| 6153529 | Photo-assisted remote plasma apparatus and method The present invention provides a plasma processing system comprising a remote plasma activation region for formation of active gas species, a transparent transfer tube coupled between the remote activation region and a semiconductor processing chamber, an... | 11/28/2000 |
| 6139697 | Low temperature integrated via and trench fill process and apparatus The present invention relates generally to an improved process for providing complete via fill on a substrate and planarization of metal layers to form continuous, void-free contacts or vias in sub-half micron applications. In one aspect of the invention,... | 10/31/2000 |
| 6117487 | Process for forming metal oxide film by means of CVD system A process for forming a metal oxide film by means of a chemical vapor deposition system, which comprises using a complex of a ଲ-diketone compound and a group IV metal glycolate, the complex being represented by formula (I): ##STR1## wherei... | 09/12/2000 |
| 6063705 | Precursor chemistries for chemical vapor deposition of ruthenium and ruthenium oxide A method is provided for forming a film of ruthenium or ruthenium oxide on the surface of a substrate by employing the techniques of chemical vapor deposition to decompose precursors of ruthenium having the formula: Ly RuXz where L i... | 05/16/2000 |
| 6059939 | Method for high density edge mounting of chips An integrated circuit package derives increased mechanical robustness and electrical reliability consistent with increased heat dissipation capacity by edge bonding of integrated circuit chips onto a substrate such as a chip, board, module or another inte... | 05/09/2000 |
