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| Number | Title | Issue Date |
| 7355205 | Light emitting apparatus and method for manufacturing the same The purpose of the invention is to improve reliability of a light emitting apparatus comprising a TFT and organic light emitting elements. The light emitting apparatus according to the invention having a thin film transistor and a light emitting element, comp... | 04/08/2008 |
| 7302982 | Label applicator and system A label applicator including a support surface having a central area and curving downwardly from the central area. A post assembly extends up from the central area such that a label having a label through-hole can be positioned in a support position generally on the... | 12/04/2007 |
| 7242012 | Lithography device for semiconductor circuit pattern generator General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor ... | 07/10/2007 |
| 7229859 | Thin film device provided with coating film, liquid crystal panel and electronic device, and method for making the thin film device Any one of an insulating film forming a TFT, a silicon film and a conductive film is formed by applying a solution and annealing it. In a spin coater (102), a coating solution containing a thin film component which is supplied from a solution storage section ... | 06/12/2007 |
| 7223696 | Methods for maskless lithography General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor ... | 05/29/2007 |
| 7202568 | Semiconductor passivation deposition process for interfacial adhesion A method of passivating an integrated circuit (IC) is provided. An insulating layer is formed onto the IC. An adhesion layer is formed onto a surface of the insulating layer by treating the surface of the insulating layer with a gas. A first passivation layer is for... | 04/10/2007 |
| 7193239 | Three dimensional structure integrated circuit A Three-Dimensional Structure (3DS) Memory allows for physical separation of the memory circuits and the control logic circuit onto different layers such that each layer may be separately optimized. One control logic circuit suffices for several memory circuits, red... | 03/20/2007 |
| 7176545 | Apparatus and methods for maskless pattern generation General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor ... | 02/13/2007 |
| 7173180 | Silane composition, silicon film forming method and solar cell production method A silane composition for preparing a semiconductor thin films of a solar cell is disclosed. The silane composition contains a polysilane compound represented by the formula SinRm (n is an integer of 3 or more, m is an integer of n to (2n+2) and... | 02/06/2007 |
| 7170184 | Treatment of a ground semiconductor die to improve adhesive bonding to a substrate Methods are provided to improve the adhesive bonding of a semiconductor die to a substrate through an adhesive paste by forming a layer of silicon dioxide on the back surface of the semiconductor die prior to applying the adhesive paste. Contacting the semiconductor... | 01/30/2007 |
| 7138295 | Method of information processing using three dimensional integrated circuits A Three-Dimensional Structure (3DS) Memory allows for physical separation of the memory circuits and the control logic circuit onto different layers such that each layer may be separately optimized. One control logic circuit suffices for several memory circuits, red... | 11/21/2006 |
| 7112453 | Retentate chromatography and protein chip arrays with applications in biology and medicine This invention provides methods of retentate chromatography for resolving analytes in a sample. The methods involve adsorbing the analytes to a substrate under a plurality of different selectivity conditions, and detecting the analytes retained on the substrate by d... | 09/26/2006 |
| 7094657 | Method for protecting against oxidation of a conductive layer in said device In a semiconductor device including a first conductive layer, the first conductive layer is treated with a nitrogen/hydrogen plasma before an additional layer is deposited thereover. The treatment stuffs the surface with nitrogen, thereby preventing oxygen from bein... | 08/22/2006 |
| 7067861 | Device and method for protecting against oxidation of a conductive layer in said device In a semiconductor device including a first conductive layer, the first conductive layer is treated with a nitrogen/hydrogen plasma before an additional layer is deposited thereover. The treatment stuffs the surface with nitrogen, thereby preventing oxygen from bein... | 06/27/2006 |
| 7067069 | Silane composition, silicon film forming method and solar cell production method A silane composition for preparing a semiconductor thin films of a solar cell is disclosed. The silane composition contains a polysilane compound represented by the formula SinRm (n is an integer of 3 or more, m is an integer of n to (2n+2) and... | 06/27/2006 |
| 7067414 | Low k interlevel dielectric layer fabrication methods A low k inter-level dielectric layer fabrication method includes providing a substrate having integrated circuitry at least partially formed thereon. An oxide-comprising inter-level dielectric layer including carbon and having a dielectric constant no greater than 3... | 06/27/2006 |
| 7048967 | Organic film vapor deposition method and a scintillator panel An organic film vapor deposition method includes a first step of supporting a substrate formed with a scintillator on at least three protrusions of a target-support element disposed on a vapor deposition table so as to keep a distance from the vapor deposition table... | 05/23/2006 |
| 7049191 | Method for protecting against oxidation of a conductive layer in said device In a semiconductor device including a first conductive layer, the first conductive layer is treated with a nitrogen/hydrogen plasma before an additional layer is deposited thereover. The treatment stuffs the surface with nitrogen, thereby preventing oxygen from bein... | 05/23/2006 |
| 7030313 | Thin film solar cell and method of manufacturing the same A thin film solar cell comprises a p-layer, an i-layer and an n-layer formed in this order as a pin junction on a substrate in which the p-layer and the i-layer are thin silicon films each containing a crystalline component, and the p-layer contains p-type impuritie... | 04/18/2006 |
| 6972452 | Device and method for protecting against oxidation of a conductive layer in said device In a semiconductor device including a first conductive layer, the first conductive layer is treated with a nitrogen/hydrogen plasma before an additional layer is deposited thereover. The treatment stuffs the surface with nitrogen, thereby preventing oxygen from bein... | 12/06/2005 |
| 6926926 | Silicon carbide deposited by high density plasma chemical-vapor deposition with bias A SiC-based layer is deposited on a substrate having an electrical resistivity between about 1 and 100 Ω cm. The substrate is disposed in a process chamber. A gaseous mixture having a silicon-containing gas and a hydrocarbon-containing gas is flowed to the process ... | 08/09/2005 |
| 6924188 | Device and method for protecting against oxidation of a conductive layer in said device In a semiconductor device including a first conductive layer, the first conductive layer is treated with a nitrogen/hydrogen plasma before an additional layer is deposited thereover. The treatment stuffs the surface with nitrogen, thereby preventing oxygen from bein... | 08/02/2005 |
| 6808758 | Pulse precursor deposition process for forming layers in semiconductor devices A process for producing thin layers in electronic devices such as integrated circuit chips, is provided. The process includes the steps of injecting a precursor fluid into a thermal processing chamber containing a substrate, such as a semiconductor wafer. The precur... | 10/26/2004 |
| 6794270 | Method for shallow trench isolation fabrication and partial oxide layer removal A method for forming thoroughly deposited shallow trench isolation. A first oxide layer is formed conformally over the surface of a semiconductor substrate and on a trench thereon with an aspect ratio greater than 3. A liquid etching shield is filled in the trench b... | 09/21/2004 |
| 6635589 | Methods of heat treatment and heat treatment apparatus for silicon oxide films Silicon oxide films which are good as gate insulation films are formed by subjecting a silicon oxide film which has been formed on an active layer comprising a silicon film by means of a PVD method or CVD method to a heat treatment at 300-700° C. in a di... | 10/21/2003 |
| 6586056 | Silicon based films formed from iodosilane precursors and method of making the same A method for near atmospheric pressure chemical vapor deposition of a silicon based film onto a substrate includes introducing into a deposition chamber at about atmospheric pressure: (i) a substrate; (ii) an iodosilane precursor in the vapor state having... | 07/01/2003 |
| 6578381 | Fine glass particle containing embedded oxide and process for producing the same The oxides-enclosed fine glass particles are arranged such that two or more pieces of at least two kinds of enclosing particles, which comprise oxides, double oxides, or salts of oxyacids, or double oxides or double salts thereof, are enclosed in each of ... | 06/17/2003 |
| 6576534 | Method for forming a semiconductor A preparing method of a semiconductor, particularly a preparing method of a polycrystal semiconductor film which has a good electrical property is disclosed. In order to obtain a non-crystalline silicon film containing a lot of combination of hydrogen and... | 06/10/2003 |
| 6472022 | Method for forming thin film, spheroid coated with thin film, light bulb using the spheroid and equipment for film formation The present invention provides a method for forming thin films, wherein thin films with a uniform thickness can be formed on substrates as objects such as spheroids, even when the films are formed by conventional film-formation methods using an incident p... | 10/29/2002 |
| 6258407 | Precursors for making low dielectric constant materials with improved thermal stability Fluorinated chemical precursors, methods of manufacture, polymer thin filmswith low dielectric constants, and integrated circuits comprising primarily of sp2 C--F and some hyperconjugated sp3 C--F bonds are disclosed in this inventio... | 07/10/2001 |
| 6224934 | Ozone-processing apparatus for semiconductor process system An ozone-processing apparatus for a semiconductor process system includes an airtight process chamber and a lamp chamber, which are partitioned by a window for transmitting ultraviolet rays. A plurality of ultraviolet-ray lamps is arrayed along the window... | 05/01/2001 |
| 6150430 | Process for adhering a photochromic coating to a polymeric substrate Described is a process for producing an adherent organic polymeric layer on organic polymeric substrates following the steps of (a) treating the surface of the polymeric substrate to provide reactive groups; (b) applying to the treated surface a polymeriz... | 11/21/2000 |
| 6117283 | Silicon coating on air bearing surface for magnetic thin film heads A silicon coating on an air bearing surface for magnetic thin film heads. A thick silicon layer is provided to replace metallic layers such as TiW as an overcoat for thin film heads. The silicon layer will provide a durable head-disk interface and act as ... | 09/12/2000 |
| 6096700 | Environmental wipe solvent compositions and processes A non-chrome process for the pretreatment of substrate surfaces to simultaneously clean them and improve their bonding strength for organic coatings such as adhesives, protective primers, sealants, paints, composites and similar materials conventionally b... | 08/01/2000 |
| 5846609 | Masking methods for semiconductor materials A method of forming a mask including providing a fluid from a group including oxygen based, nitrogen based, or carbon based fluids, introducing a substrate of semiconductor material into the fluid, and growing a film with thickness in a range of 10-20 Å ... | 12/08/1998 |
| 5800880 | Process for coating the interior wall of a container with a SiOx barrier layer A process for creating a SiOx barrier layer on the interior wall of a container is disclosed in the present invention. A gas mixture consisting of an organosilicon precursor gas, an oxidizer gas and a carrier gas is introduced into a polymeric container. ... | 09/01/1998 |
| 5756154 | Masking methods during semiconductor device fabrication A method of masking surfaces during fabrication of semiconductor devices is disclosed, which includes providing a substrate, and in a preferred embodiment a silicon substrate. The surface is hydrogen terminated (or hydrogenated) and a metal mask is positi... | 05/26/1998 |
| 5753320 | Process for forming deposited film A process for forming a deposited film on a substrate according to the chemical vapor deposition method comprises previously forming excited species of a gas phase compound containing atoms which become constituents constituting said deposited film, suppl... | 05/19/1998 |
| 5728224 | Apparatus and method for manufacturing a packaging material using gaseous phase atmospheric photo chemical vapor deposition to apply a barrier layer to a moving web substrate An apparatus and process are disclosed for depositing a barrier layer, such as an SiOx barrier layer, onto a moving web of substrate material in a continuous process at atmospheric pressure using a gaseous phase precursor and an oxidizer.... | 03/17/1998 |
| 5710079 | Method and apparatus for forming dielectric films Disclosed is a method and apparatus for facilitating the decomposition of organometallic compounds such as TEOS in chemical vapor deposition reactors in order to form deposition films. The method generally includes: (1) introducing an organometallic compo... | 01/20/1998 |
