Bizarre Patents
Dining Table Having Integral Dishwasher
A space-saving dishwasher, which may be installed within a counter top or table, having a dish-carrying rack that is vertically shiftable through the open top of the dishwasher for facilitating loading and unloading of the dishes.
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| Number | Title | Issue Date |
| 7491431 | Dense coating formation by reactive deposition Methods for forming coated substrates can be based on depositing material from a flow onto a substrate in which the coating material is formed by a reaction within the flow. In some embodiments, the product materials are formed in a reaction driven by photon energy ... | 02/17/2009 |
| 7359032 | Lithographic apparatus and device manufacturing method A lithographic projection apparatus is disclosed. The apparatus includes a radiation system for providing a beam of radiation, a first support structure for supporting a patterning device, a second support structure for supporting a substrate, and a projection syste... | 04/15/2008 |
| 7352433 | Lithographic apparatus and device manufacturing method Liquid is supplied to a space between the projection system of a lithographic apparatus and a substrate. A flow of gas towards a vacuum inlet prevents humid gas from escaping to other parts of the lithographic apparatus. This may help to protect intricate parts of t... | 04/01/2008 |
| 7348042 | Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) The present invention relates to an enhanced sequential atomic layer deposition (ALD) technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conduct... | 03/25/2008 |
| 7311942 | Method for binding halide-based contaminants during formation of a titanium-based film A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to remove halides, such as chlorine and chlorides, during the deposition pr... | 12/25/2007 |
| 7267848 | Method of fabricating a protective film by use of vacuum ultraviolet rays In a method of fabricating a protective film, a vacuum ultraviolet radiation CVD (Chemical Vapor Deposition) system is used. The method includes providing a vacuum ultraviolet rays generator, a reactor provided with a platform for supporting a substrate, a heat reta... | 09/11/2007 |
| 7269343 | Heating configuration for use in thermal processing chambers An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the... | 09/11/2007 |
| 7220683 | Transparent amorphous carbon structure in semiconductor devices A transparent amorphous carbon layer is formed. The transparent amorphous carbon layer has a low absorption coefficient such that the amorphous carbon is transparent in visible light. The transparent amorphous carbon layer may be used in semiconductor devices for di... | 05/22/2007 |
| 7218377 | Exposure apparatus and device manufacturing method Disclosed is an exposure apparatus including a projection optical system for projecting a pattern of an original onto a substrate, a stage for holding the substrate, a cover for substantially surrounding an exposure light path, from an end portion of the projection ... | 05/15/2007 |
| 7216546 | Pressure sensor having integrated temperature sensor A pressure sensor includes a case, terminals, a pressure sensing element, a port, and a temperature sensing element. The terminals are assembled to the case by insert molding and connectable to an external device. The pressure sensing element is electrically connect... | 05/15/2007 |
| 7214618 | Technique for high efficiency metalorganic chemical vapor deposition A technique for more efficiently forming conductive elements, such as conductive layers and electrodes, using chemical vapor deposition. A conductive precursor gas, such as a platinum precursor gas, having organic compounds to improve step coverage is introduced int... | 05/08/2007 |
| 7214549 | Correcting device, exposure apparatus, device production method, and device produced by the device production method A correcting device that properly maintains the flatness of a mask, an exposure apparatus in which overlay accuracy is increased by making use of the correcting device, and a device production method. The correcting device includes a gas flow path including a first ... | 05/08/2007 |
| 7211300 | Method and apparatus for performing laser CVD An element is deposited by flowing a gas through a solid donor compound that includes the element, and over a substrate. The flow of gas deposits a film of a few monolayers of donor compound on the substrate. An optical radiation source (e.g., a femtosecond laser) w... | 05/01/2007 |
| 7182794 | Correcting device, exposure apparatus, device production method, and device produced by the device production method A correcting device that properly maintains the flatness of a mask, an exposure apparatus in which overlay accuracy is increased by making use of the correcting device, and a device production method. The correcting device includes a gas flow path including a first ... | 02/27/2007 |
| 7176044 | B-stageable die attach adhesives The present invention relates to b-stageable die attach adhesives, methods of preparing such adhesives, methods of applying such adhesives to the die and other substrate surfaces, and assemblies prepared therewith for connecting microelectronic circuitry. ... | 02/13/2007 |
| 7138282 | Correcting device, exposure apparatus, device production method, and device produced by the device production method A correcting device that properly maintains the flatness of a mask, an exposure apparatus in which overlay accuracy is increased by making use of the correcting device, and a device production method. The correcting device includes a gas flow path including a first ... | 11/21/2006 |
| 7132201 | Transparent amorphous carbon structure in semiconductor devices A transparent amorphous carbon layer is formed. The transparent amorphous carbon layer has a low absorption coefficient such that the amorphous carbon is transparent in visible light. The transparent amorphous carbon layer may be used in semiconductor devices for di... | 11/07/2006 |
| 7129519 | Monitoring system comprising infrared thermopile detector The present invention relates to a semiconductor processing system that employs infrared-based thermopile detector for process control, by analyzing a material of interest, based on absorption of infrared light at a characteristic wavelength by such material. Specif... | 10/31/2006 |
| 7125588 | Pulsed plasma CVD method for forming a film A method of forming an insulating ceramic film or a metallic film by a plasma CVD process in which a high density plasma is generated in the presence of a magnetic field wherein the electric power for generating the plasma has a pulsed waveform. The electric power t... | 10/24/2006 |
| 7122486 | Film forming method CVD is performed without damaging a micro-fabricated semiconductor element. An organic material gas containing amine is used as deposition material gas. The material gas is introduced into a vacuum chamber and ultraviolet light radiated from each of lamps is applied... | 10/17/2006 |
| 7123343 | Exposure apparatus and device manufacturing method An exposure apparatus which projects and transfers a pattern formed on a mask to a substrate using exposure light includes a stage, an optical system, and a gas stream forming mechanism which forms a stream of inert gas in an optical path space including a space whi... | 10/17/2006 |
| 7118781 | Methods for controlling formation of deposits in a deposition system and deposition methods including the same A method for controlling parasitic deposits in a deposition system for depositing a film on a substrate, the deposition system defining a reaction chamber for receiving the substrate and including a process gas in the reaction chamber and an interior surface contigu... | 10/10/2006 |
| 7084055 | Method for manufacturing semiconductor integrated circuit device It is desirable to prevent breakage and separation of wiring of a semiconductor integrated circuit device, such as a bit-line of a DRAM. To accomplish this, disclosed is a method in which, e.g., a high density plasma silicon oxide film is deposited on wirings (e.g.,... | 08/01/2006 |
| 7057701 | Exposure apparatus An exposure apparatus for exposing a substrate to light via a mask. The apparatus includes a projection optical system configured to project a pattern of the mask onto the substrate, a cover configured to surround a path of light from the projection optical system t... | 06/06/2006 |
| 7043993 | Pressure sensor device having temperature sensor A pressure sensor device having a temperature sensor includes a pressure sensor, a temperature sensor, a sensor casing for accommodating the pressure sensor and a connector pin for electrically connecting the pressure sensor and an outside circuit, and a port mounte... | 05/16/2006 |
| 7037560 | Film forming method, and film modifying method A film forming and film modifying method utilizing a film forming apparatus which has an alcohol supply unit to form a metal oxide film on a semiconductor wafer in a vacuum atmosphere in which a vaporized metal oxide film material and a vaporized alcohol exist. The ... | 05/02/2006 |
| 7033647 | Method of synthesising carbon nano tubes Method of synthesizing carbon nano tubes (CNTs) on a catalyst layer formed on a support member, by catalytic deposition of carbon from a gaseous phase, whereby an ion beam is used prior to, during, and/or after formation of the carbon nano tubes for modifying the ph... | 04/25/2006 |
| 7026257 | Method of manufacturing low dielectric film by a vacuum ultraviolet chemical vapor deposition A method is used for forming a low relative permittivity dielectric film by a vacuum ultraviolet CVD. The film is a silicon organic film (e.g., SiOCH, SiC, SiCH, and SiOF films) that has a controlled relative permittivity and is formed at temperatures below 350° C.... | 04/11/2006 |
| 7022615 | Plasma processing method A plasma processing method for processing a surface of an object to be processed made of a metal or a semiconductor by applying activated particles generated by a microplasma generated at a pressure of not lower than 10,000 Pa and not higher than three atmospheric p... | 04/04/2006 |
| 6970228 | Exposure method and system An exposure method and an exposure apparatus make it possible to easily supply a gas through which an exposure light beam is transmitted, to a space between a projection optical system and a substrate. A wafer is exposed with an image of a pattern on a reticle by ra... | 11/29/2005 |
| 6951766 | Correcting device, exposure apparatus, device production method, and device produced by the device production method A correcting device that properly maintains the flatness of a mask, an exposure apparatus in which overlay accuracy is increased by making use of the correcting device, and a device production method. The correcting device includes a gas flow path including a first ... | 10/04/2005 |
| 6932873 | Managing work-piece deflection A work-piece deflection management system including: (a) a first and a second vacuum chambers, each said vacuum chamber having an air-bearing seal circumscribing one of its sides, and (b) a work-piece plate; wherein the air-bearing seals are aligned to face one-anot... | 08/23/2005 |
| 6926801 | Laser machining method and apparatus In a laser machining method for removing remaining defects on a photomask, there has been problems to be resolved that damage is formed at the portion of the substrate where the defect has been removed, thus resulting in degraded quality of machining. In a laser mac... | 08/09/2005 |
| 6926933 | Method of manufacturing water-repelling film A water-repelling film is formed by using a vacuum ultraviolet rays chemical vapor deposition (CVD) system (100) comprising a vacuum ultraviolet rays generating section (102), a reaction room (106), and a window (104) for separating the r... | 08/09/2005 |
| 6906323 | Method and apparatus for generation of molecular beam Here is disclosed a method for generation of a molecular beam from a sample solution, comprising steps of operating a spray-in device to introduce the sample solution in atomized state into a spray chamber, impinging a suitable gas on the sample solution in atomized... | 06/14/2005 |
| 6841079 | Fluorochemical treatment for silicon articles Silicon substrates having Si—H bonds are chemically modified using a fluorinated olefin having the formula: wherein m is an integer greater than or equal to 1; | 01/11/2005 |
| 6808758 | Pulse precursor deposition process for forming layers in semiconductor devices A process for producing thin layers in electronic devices such as integrated circuit chips, is provided. The process includes the steps of injecting a precursor fluid into a thermal processing chamber containing a substrate, such as a semiconductor wafer. The precur... | 10/26/2004 |
| 6664030 | System for and method of constructing an alternating phase-shifting mask An exemplary method of constructing an alternating phase-shifting mask is described. This method can include providing a vapor in a vapor chamber containing a mask blank, and applying a laser to selected areas of the mask blank to deposit material on the ... | 12/16/2003 |
| 6656539 | Method and apparatus for performing laser CVD An element is deposited by flowing a gas through a solid donor compound that includes the element, and over a substrate. The flow of gas deposits a film of a few monolayers of donor compound on the substrate. An optical radiation source (e.g., a femtoseco... | 12/02/2003 |
| 6635589 | Methods of heat treatment and heat treatment apparatus for silicon oxide films Silicon oxide films which are good as gate insulation films are formed by subjecting a silicon oxide film which has been formed on an active layer comprising a silicon film by means of a PVD method or CVD method to a heat treatment at 300-700° C. in a di... | 10/21/2003 |
