Did You Know...
...that one person who claimed to be the inventor of the television is Russian emigre Vladimir Zworykin? In 1929 David Sarnoff, founder of RCA, asked Zworykin what it would take to develop TV for commercial use. He said: a year and a half and $100,000. In reality, it took 20 years and $50 million! Before his death in 1982 at the age of 92, Zworykin said of his invention: "The technique is wonderful. It is beyond my expectations. But the programs! I would never let my children even come close to this thing."
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| Number | Title | Issue Date |
| 7419546 | Gas diffusion electrodes, membrane-electrode assemblies and method for the production thereof A method for forming a noble metal coating on a gas diffusion medium substantially free of ionomeric components comprising subjecting an electrically conductive web to a first ion beam having an energy not higher than 500 eV, then to a second beam having an energy o... | 09/02/2008 |
| 7323229 | Method and device for coating a substrate The invention relates to a method for coating a substrate with a layer of a material, such as a metal, in which a quantity of electrically conductive material is vaporized in a space with a low background pressure and energy is supplied to the material which is to b... | 01/29/2008 |
| 7311946 | Methods for depositing metal films on diffusion barrier layers by CVD or ALD processes A process is described for depositing a metal film on a substrate surface having a diffusion barrier layer deposited thereupon. In one embodiment of the present invention, the process includes: providing a surface of the diffusion barrier layer that is substantially... | 12/25/2007 |
| 7303815 | Functional bimorph composite nanotapes and methods of fabrication A two-layer nanotape that includes a nanoribbon substrate and an oxide that is epitaxially deposited on a flat surface of the nanoribbon substrate is described. The oxide is deposited on the substrate using a pulsed laser ablation deposition process. The nanoribbons... | 12/04/2007 |
| 7208421 | Method and apparatus for production of metal film or the like In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a diff... | 04/24/2007 |
| 7128805 | Multiple elliptical ball plasma apparatus A plasma generating device, has a plurality of cavities shaped like half-ellipsoids, a plasma cavity, and microwave sources. The present invention takes advantage of geometrical properties of the propagation of electromagnetic waves by enclosing an electromagnetic f... | 10/31/2006 |
| 7122454 | Method for improving nitrogen profile in plasma nitrided gate dielectric layers A method is provided wherein a gate dielectric film that is plasma nitrided in a chamber of one system is subsequently heated or “annealed” in another chamber of the same system. Processing delay can be controlled so that all wafers processed in the system exper... | 10/17/2006 |
| 7112453 | Retentate chromatography and protein chip arrays with applications in biology and medicine This invention provides methods of retentate chromatography for resolving analytes in a sample. The methods involve adsorbing the analytes to a substrate under a plurality of different selectivity conditions, and detecting the analytes retained on the substrate by d... | 09/26/2006 |
| 7109124 | Solid state plasma antenna A solid state electronically steerable antenna can be generated from a sheet of semiconductor material by forming a pattern of localised plasma regions in the sheet, either by injecting carriers into, or by generating carriers in, those localised regions. A suitable... | 09/19/2006 |
| 7048973 | Metal film vapor phase deposition method and vapor phase deposition apparatus A copper film vapor phase deposition method includes the steps of exposing high-purity copper to a plasma of a gas containing chlorine gas to etch the high-purity copper, thereby generating active CuxCly, wherein x is 1 to 3, y is 1 to 3, gas, ... | 05/23/2006 |
| 7037560 | Film forming method, and film modifying method A film forming and film modifying method utilizing a film forming apparatus which has an alcohol supply unit to form a metal oxide film on a semiconductor wafer in a vacuum atmosphere in which a vaporized metal oxide film material and a vaporized alcohol exist. The ... | 05/02/2006 |
| 6953608 | Solution for FSG induced metal corrosion & metal peeling defects with extra bias liner and smooth RF bias ramp up A HDP CVD process for depositing a USG liner followed by a FSG dielectric layer on a metal line pattern is described. The substrate is heated in a chamber with a plasma comprised of Ar and O2. A USG liner is deposited in two steps wherein the first step i... | 10/11/2005 |
| 6936310 | Plasma processing method In a plasma processing method making use of a plasma processing gas of a reactant gas and an inert gas, it is aimed at enhancing an efficiency of use of high-frequency power and a reactant gas to increase a processing rate. The plasma processing method comprises sup... | 08/30/2005 |
| 6905736 | Fabrication of nano-scale temperature sensors and heaters The method for the fabrication of nano scale temperature sensors and nano scale heaters using focused ion beam (FIB) techniques. The process used to deposit metal nano strips to form a sensor is ion beam assisted chemical vapor deposition (CVD). The FIB Ga+ | 06/14/2005 |
| 6899928 | Dual ion beam assisted deposition of biaxially textured template layers The present invention is directed towards a process and apparatus for epitaxial deposition of a material, e.g., a layer of MgO, onto a substrate such as a flexible metal substrate, using dual ion beams for the ion beam assisted deposition whereby thick layers can be... | 05/31/2005 |
| 6838125 | Method of film deposition using activated precursor gases A method for depositing a film on a substrate is provided. In one aspect, the method includes providing a metal-containing precursor to an activation zone, and activating the metal-containing precursor to form an activated precursor. The activated precursor gas is t... | 01/04/2005 |
| 6797336 | Multi-component substances and processes for preparation thereof The present invention is a method and apparatus for the synthesis of multi-component substances, comprising entities of at least two elements, molecules, grains, crystals, structural units, or phases of matter, in which the scale of the distribution of the elements,... | 09/28/2004 |
| 6737121 | Multilayer article and method of making by arc plasma deposition According to an exemplary embodiment of the invention, a method of forming a plurality of layers on an article comprises steps of generating a plasma by forming an arc between a cathode and an anode; injecting a first material comprising an organic compound into the... | 05/18/2004 |
| 6692794 | Composite and manufacturing method therefor This invention provides a composite having a hydrophilic film made of amorphous titanium oxide. A film is deposited on a substrate made of, for example, glass or synthetic resin. The film is composed of amorphous titanium oxide partially having structures... | 02/17/2004 |
| 6673386 | Method and apparatus for forming pattern onto panel substrate A method for forming a pattern on a surface of a panel substrate, includes electrically charging pattern-forming material particles, jetting out the electrically charged pattern-forming material particles through a nozzle by applying electrostatic force t... | 01/06/2004 |
| 6673722 | Microwave enhanced CVD system under magnetic field An improved chemical vapor deposition or etching is shown in which cyclotron resonance and photo or plasma CVD cooperate to deposit a layer with high performance at a high deposition speed. The high deposition speed is attributed to the cyclotron resonanc... | 01/06/2004 |
| 6656540 | Method for forming metallic film and apparatus for forming the same The present invention provides methods and apparatus for the formation of a thin noble metal film which can achieve a high rate of film growth, can use inexpensive raw materials, and do not allow any impurities to remain in the thin film. Specifically, th... | 12/02/2003 |
| 6638580 | Apparatus and a method for forming an alloy layer over a substrate using an ion beam One embodiment of the invention involves introducing at least two metals into a chamber for forming an alloy layer over a substrate. This is accomplished by a variety of methods. In one embodiment, at least two metals are mixed and introduced into a chamb... | 10/28/2003 |
| 6616986 | Sequential chemical vapor deposition The present invention provides for sequential chemical vapor deposition by employing a reactor operated at low pressure, a pump to remove excess reactants, and a line to introduce gas into the reactor through a valve. A first reactant forms a monolayer on... | 09/09/2003 |
| 6616985 | Apparatus and method for injecting and modifying gas concentration of a meta-stable or atomic species in a downstream plasma reactor An apparatus and method for injecting gas within a plasma reactor and tailoring the distribution of an active species generated by the remote plasma source over the substrate or wafer. The distribution may be uniform, wafer-edge concentrated, or wafer-cen... | 09/09/2003 |
| 6610368 | Leather and a method of dressing same Tanned leather is dry dressed by plasma deposition at atmospheric pressure of a matrix material such as ITO, a silicone, or polyurethane, upon the protein fibers of the surface of the leather and the collagen fiber skeleton below the surface protein fiber... | 08/26/2003 |
| 6514347 | Apparatus and method for plasma treatment A compensation ring 31 disposed to surround a periphery of a wafer W on a susceptor 30 is concentrically divided into an inside first compensation ring member 32 and an outside second compensation ring member 33. A width of a first compensation ring membe... | 02/04/2003 |
| 6465052 | Method for production of nano-porous coatings A method for producing a nano-porous coating onto a substrate, including the steps of: (a) operating a twin-wire arc nozzle to heat and at least partially vaporize two wires of a metal for providing a stream of nanometer-sized vapor clusters of the metal ... | 10/15/2002 |
| 6426125 | Multilayer article and method of making by ARC plasma deposition According to an exemplary embodiment of the invention, a method of forming a plurality of layers on an article comprises steps of generating a plasma by forming an arc between a cathode and an anode; injecting a first material comprising an organic compou... | 07/30/2002 |
| 6379748 | Tantalum amide precursors for deposition of tantalum nitride on a substrate Tantalum and titanium source reagents are described, including tantalum amide and tantalum silicon nitride precursors for the deposition of tantalum nitride material on a substrate by processes such as chemical vapor deposition, assisted chemical vapor de... | 04/30/2002 |
| 6365016 | Method and apparatus for arc plasma deposition with evaporation of reagents A method and apparatus for depositing a coating on a substrate. A method of coating a substrate comprises evaporating a first reactant; introducing the evaporated reactant into a plasma; and depositing the first reactant on a surface of the substrate. Thi... | 04/02/2002 |
| 6350494 | Method for generating continuous stream of liquid metal droplets A solder jet apparatus is disclosed The solder jet apparatus is a continuous mode solder jet that includes a blanking system and raster scan system. The use of the raster scan and blanking systems allows for a continuous stream of solder to be placed anyw... | 02/26/2002 |
| 6342277 | Sequential chemical vapor deposition The present invention provides for sequential chemical vapor deposition by employing a reactor operated at low pressure, a pump to remove excess reactants, and a line to introduce gas into the reactor through a valve. A first reactant forms a monolayer on... | 01/29/2002 |
| 6306467 | Method of solid free form fabrication of objects A method of solid free form fabrication of an object includes the steps of providing a substrate, forming a plurality of molten droplets, and spraying the molten droplets upward against the substrate to form a net shape object.... | 10/23/2001 |
| 6291028 | Method and apparatus for improving the film quality of plasma enhanced CVD films at the interface A method and apparatus for depositing a layer having improved film quality at an interface. The method includes the steps of introducing an inert gas into a processing chamber and forming a plasma from the inert gas by applying RF power to the chamber at ... | 09/18/2001 |
| 6277436 | Liquid delivery MOCVD process for deposition of high frequency dielectric materials A liquid delivery MOCVD method for deposition of dielectric materials such as (Ba,Sr) titanates and (Zr,Sn) titanates, in which metal source compounds are dissolved or suspended in solvent and flash vaporized at temperatures of from about 100° C. to abou... | 08/21/2001 |
| 6254940 | Electrically assisted synthesis of particles and film with precisely controlled characteristic The present invention related to methods of manufacturing oxide, nitride, carbide, and boride powders and other ceramic, organic, metallic, carbon and alloy powders and films and their mixtures having well-controlled size and crystallinity characteristics... | 07/03/2001 |
| 6245394 | Film growth method and film growth apparatus capable of forming magnesium oxide film with increased film growth speed An auxiliary anode (30) having a ring-shaped permanent magnet (31) is placed in a vacuum chamber (11) such that the auxiliary anode is coaxial with a central axis of a hearth (20) and is positioned so as to surround an upper area of the hearth. A plasma b... | 06/12/2001 |
| 6180185 | Method of forming a film on a substrate An apparatus for forming a film on a substrate includes a gas inlet and an insert attached to the gas inlet, the insert including a deposition source material such as lithium. To form the film on the substrate, the substrate is mounted in a vacuum chamber... | 01/30/2001 |
| 6177142 | Method of forming a film on a substrate An apparatus for forming a film on a substrate includes a gas inlet and an insert attached to the gas inlet, the insert including a deposition source material such as lithium. To form the film on the substrate, the substrate is mounted in a vacuum chamber... | 01/23/2001 |
