Did You Know...
...that after Parker Brothers executives turned down the game of Monopoly because it had "52 fundamental errors" (including taking too long to play), a copy of the game wound up in the home of the company president who stayed up until 1 a.m. to finish playing it? He was so impressed by the game that the next day he wrote to inventor Charles Darrow and offered to buy it!
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| Number | Title | Issue Date |
| 8163344 | Method for the formation of doped boron A chemically doped boron coating is applied by chemical vapor deposition to a silicon carbide fiber and the coated fiber then is exposed to magnesium vapor to convert the doped boron to doped magnesium diboride and a resultant superconductor. ... | 04/24/2012 |
| 8158200 | Methods of forming graphene/(multilayer) boron nitride for electronic device applications Disclosed is a substrate-mediated assembly for graphene structures. According to an embodiment, long-range ordered, multilayer BN(111) films can be formed by repeated atomic layer deposition (ALD) of a boron-halide or organoborane precursor and NH3 onto a... | 04/17/2012 |
| 7431967 | Limited thermal budget formation of PMD layers A method of filling a gap on a substrate includes providing flows of silicon-containing processing gas oxidizing processing gas, and phosphorous-containing processing gas to a chamber housing the substrate and depositing a first portion of a P-doped silicon oxide fi... | 10/07/2008 |
| 7396563 | Ceramic thin film on various substrates, and process for producing same The process of Polymer Assisted Chemical Vapor Deposition (PACVD) and the semiconductor, dielectric, passivating or protecting thin films produced by the process are described. A semiconductor thin film of amorphous silicon carbide is obtained through vapor depositi... | 07/08/2008 |
| 7348287 | Ceramic material The present invention relates to a ceramic material containing yttrium silicate which further contains zirconium, and to the use of said ceramic material as a heat and/or corrosion protection layer, and to a process for preparing coatings with said ceramic material.... | 03/25/2008 |
| 7192486 | Clog-resistant gas delivery system Processing gases reactive with each other are provided in parallel to a processing chamber through separate delivery lines including mass flow controllers devoted to each line. The parallel delivery lines meet in a mixing manifold located proximate to the processing... | 03/20/2007 |
| 7189425 | Method of manufacturing a superconducting magnesium diboride thin film A superconducting magnesium diboride (MgB2) thin film having c-axial orientation and a method and apparatus for fabricating the same are provided. The fabrication method includes forming a boron thin film on a substrate and thermally processing the substr... | 03/13/2007 |
| 7101795 | Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer A method and system to form a refractory metal layer on a substrate features nucleating a substrate using sequential deposition techniques in which the substrate is serially exposed to first and second reactive gases followed by forming a layer, employing vapor depo... | 09/05/2006 |
| 7084068 | Annealing furnace, manufacturing apparatus, annealing method and manufacturing method of electronic device An annealing furnace, includes a processing chamber configured to store a substrate; a susceptor located in the processing chamber so as to load the substrate and having an auxiliary heater for heating the substrate at 650° C. or less, the susceptor having a surfac... | 08/01/2006 |
| 7037376 | Backflush chamber clean A processing chamber may be effectively cleaned by a remote plasma flowed through the chamber in a direction opposite to the direction of gas flowed during wafer processing. Specifically, the remotely generated plasma may be introduced directly into the chamber thro... | 05/02/2006 |
| 7029723 | Forming chemical vapor depositable low dielectric constant layers Carborane may be used as a precursor to form low dielectric constant dielectrics. The carborane material may be modified to enable it to be deposited by chemical vapor deposition. ... | 04/18/2006 |
| 7026009 | Evaluation of chamber components having textured coatings A component for a substrate processing chamber comprises a structure having a textured coating with surface grains. The component is evaluated by directing a beam of electrons onto the textured coating of the component to cause at least some of the electrons to be b... | 04/11/2006 |
| 6969539 | Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris-(ter-butoxy)silanol react with vapors of tetrakis(ethy... | 11/29/2005 |
| 6955532 | Method and apparatus for the manufacture of high temperature materials by combustion synthesis and semi-solid forming An apparatus and method of producing dense, near net shape components of advanced materials such as intermetallics, ceramics, and their composites. The method consists of two major steps combined into one. First step includes the preparation of semi-solid or liquid ... | 10/18/2005 |
| 6907841 | Apparatus and method for synthesizing spherical diamond powder by using chemical vapor deposition method Disclosed are an apparatus and a method to synthesize powders typed diamond with the size between several tens nm to several μm in diameter using conventional CVD processes for deposition of diamond films. Gas phase nucleation has been induced on the boundary of pl... | 06/21/2005 |
| 6905737 | Method of delivering activated species for rapid cyclical deposition A method for providing activated species for a cyclical deposition process is provided. In one aspect, the method includes delivering a gas to be activated into a plasma generator, activating the gas to create a volume of reactive species, delivering a fraction of t... | 06/14/2005 |
| 6852406 | Anti-static, anti-reflection coating An anti-static, anti-reflection, transparent coating for a transpatent substrate, the coating including at least one electrically conductive layer, wherein the sheet resistance of the coating is less than about 1010 ohm/square. The coating is preferably h... | 02/08/2005 |
| 6846516 | Multiple precursor cyclical deposition system Embodiments of the present invention relate to an apparatus and method of cyclical deposition utilizing three or more precursors in which delivery of at least two of the precursors to a substrate structure at least partially overlap. One embodiment of depositing a t... | 01/25/2005 |
| 6827796 | High strength alloys and methods for making same A family of extremely fine-grained alloys are used to make coatings or free-standing bodies having desirable properties for use as a heat-resistant and wear-resistant material. In an illustrative embodiment, the alloys are comprised of a multiplicity of alternate, m... | 12/07/2004 |
| 6824825 | Method for depositing metallic nitride series thin film The present invention generally relates to a method for depositing a metallic nitride series thin film, typically a TiN-series thin film. The TiN-series thin film according to the present invention is formed by a CVD, and contains Ti, O and N to have a higher barrie... | 11/30/2004 |
| 6808748 | Hydrogen assisted HDP-CVD deposition process for aggressive gap-fill technology A method of depositing a silicon oxide layer over a substrate having a trench formed between adjacent raised surfaces. In one embodiment the silicon oxide layer is formed in a multistep process that includes depositing a first portion of layer over the substrate and... | 10/26/2004 |
| 6797341 | Method for producing boride thin films Thin films of conducting and superconducting materials are formed by a process which combines physical vapor deposition with chemical vapor deposition. Embodiments include forming boride films, such as magnesium diboride, in high purity with superconducting properti... | 09/28/2004 |
| 6797340 | Method for depositing refractory metal layers employing sequential deposition techniques A method for forming a tungsten layer on a substrate surface is provided. In one aspect, the method includes positioning the substrate surface in a processing chamber and exposing the substrate surface to a boride. A nucleation layer is then deposited on the substra... | 09/28/2004 |
| 6790475 | Source gas delivery A method and system are provided for delivering a source gas to a processing chamber. A source gas delivery method includes providing a precursor chamber configured to hold precursor vapor, providing a saturated precursor vapor at a selected pressure within the prec... | 09/14/2004 |
| 6787199 | Composite device and manufacturing method therefor This invention provides a composite device whereby surface reflection and interference colors can be inhibited, photocatalytic decomposition performance may be improved and hydrophilicity-acquiring rate may be improved. A mixture film (14) is deposited on the... | 09/07/2004 |
| 6773751 | Boron nitride/yttria composite components of semiconductor processing equipment and method of manufacturing thereof A corrosion resistant component of semiconductor processing equipment such as a plasma chamber includes a boron nitride/yttria composite containing surface and process for manufacture thereof. ... | 08/10/2004 |
| 6716476 | Method of depositing an optical quality silica film by PECVD A method is disclosed for depositing an optical quality silica film on a wafer by PECVD. The flows rates for a raw material gas, an oxidation gas, a carrier gas, and a dopant gas are first set at predetermined levels. The total deposition pressure is set at a predet... | 04/06/2004 |
| 6709703 | Method for fabricating a III-V nitride film and an apparatus for fabricating the same A substrate is set on a susceptor installed in a reactor and arranged horizontally. A cooling jacket is provided at a portion of the inner wall of the reactor that is opposite to the substrate. By flowing a given cooling medium through the cooling jacket with a pump... | 03/23/2004 |
| 6669989 | Method for producing by evaporation a functionally graded coating with an outer ceramic layer on a metal substrate The invention relates to a method and apparatus for the production of protective coatings on parts. A coating formed in accordance with the invention has a chemical composition and structure gradient across its thickness. The coating is obtained by heatin... | 12/30/2003 |
| 6660342 | Pulsed electromagnetic energy method for forming a film A method of forming a film by a plasma CVD process in which a high density plasma is generated in the presence of a magnetic field wherein the electric power for generating the plasma has a pulsed waveform. The electric power typically is supplied by micr... | 12/09/2003 |
| 6635310 | Method of heat treatment A thermal processing method of the invention includes; a loading step of loading an object to be processed into a processing container, the object having a surface provided with a silicon film having a minutely irregular profile; and a doping step of intr... | 10/21/2003 |
| 6616973 | Liquid phosphorous precursor delivery apparatus The present invention recognizes that the build-up of residue in a metal alloy injection valve used to inject a liquid phosphorous precursor compound is due to the nickel in the alloy affecting the liquid phosphorous precursor compound. The invention thus... | 09/09/2003 |
| 6599574 | Method and apparatus for forming a dielectric film using helium as a carrier gas The present invention relates to the deposition of dielectric layers, and more specifically to a method and apparatus for forming dielectric layers such as borophosphosilicate glass (BPSG) having improved film uniformity, higher deposition rate, superior ... | 07/29/2003 |
| 6551929 | Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques A method and system to form a refractory metal layer on a substrate features a bifurcated deposition process that includes nucleating a substrate using ALD techniques to serially expose the substrate to first and second reactive gases followed forming a b... | 04/22/2003 |
| 6537438 | Method for protecting electrodes during electrolysis cell start-up The present invention is directed to methods for applying a protective layer (42) to the cathode (40) of an electrolysis cell (10), where the cell also contains inert anodes (50) and the protective layer (42) can comprise a plurality of layers (70, 72, 74... | 03/25/2003 |
| 6482476 | Low temperature plasma enhanced CVD ceramic coating process for metal, alloy and ceramic materials A low temperature, high growth rate plasma enhanced chemical vapor deposition process is demonstrated for ceramic coatings on metal, alloy and ceramic substrates. The deposition process is carried out at low temperatures ( | 11/19/2002 |
| 6465052 | Method for production of nano-porous coatings A method for producing a nano-porous coating onto a substrate, including the steps of: (a) operating a twin-wire arc nozzle to heat and at least partially vaporize two wires of a metal for providing a stream of nanometer-sized vapor clusters of the metal ... | 10/15/2002 |
| 6444265 | Method for producing a titanium monophosphide layer and its use In a method for producing a titanium monophosphide layer, a carrier is first placed in a reactor. Thereafter, a TiN layer is deposited on the carrier by supplying TiCl4 ad NH3 into the reactor. The TiN layer is annealed immediately a... | 09/03/2002 |
| 6410090 | Method and apparatus for forming insitu boron doped polycrystalline and amorphous silicon films A method and apparatus for depositing a boron insitu doped amorphous or polycrystalline silicon film on a substrate. According to the present invention, a substrate is placed into deposition chamber. A reactant gas mix comprising a silicon source gas, bor... | 06/25/2002 |
| 6337035 | Phosphor and method for producing same A phosphor is prepared by depositing a compound semiconductor of Groups III-V in the form of fine particles or a thin film on a surface of a carrier particle by hetero-epitaxial growth. Thus, the phosphor increased in quality is obtained with satisfactory... | 01/08/2002 |
