Did You Know...
...that after Parker Brothers executives turned down the game of Monopoly because it had "52 fundamental errors" (including taking too long to play), a copy of the game wound up in the home of the company president who stayed up until 1 a.m. to finish playing it? He was so impressed by the game that the next day he wrote to inventor Charles Darrow and offered to buy it!
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| Number | Title | Issue Date |
| 7309394 | Ultraviolet light-emitting device in which p-type semiconductor is used An object is to provide an ultraviolet light-emitting device in which a p-type semiconductor which has high conductivity and an emission peak in ultraviolet region, and emits light efficiently is used. The p-type semiconductor is prepared by supplying a p-type impur... | 12/18/2007 |
| 7285338 | Anisotropic thin-film rare-earth permanent magnet An anisotropic thin-film rare-earth permanent magnet endowed with high magnetic characteristics by rendering a vapor-phase-grown thin film anisotropic in the layering direction. The atomic laminate units are formed by laminating a monoatomic layer of a rare earth el... | 10/23/2007 |
| 7279732 | Enhanced atomic layer deposition A method of enhanced atomic layer deposition is described. In an embodiment, the enhancement is the use of plasma. Plasma begins prior to flowing a second precursor into the chamber. The second precursor reacts with a prior precursor to deposit a layer on the substr... | 10/09/2007 |
| 7220312 | Methods for treating semiconductor substrates The invention includes a method for treating a plurality of discrete semiconductor substrates. The discrete semiconductor substrates are placed within a reactor chamber. While the substrates are within the chamber, they are simultaneously exposed to one or more of H... | 05/22/2007 |
| 7205218 | Method including forming gate dielectrics having multiple lanthanide oxide layers A dielectric film having a layer of a lanthanide oxide and a layer of another lanthanide oxide, and a method of fabricating such a dielectric film produce a reliable gate dielectric with a equivalent oxide thickness thinner than attainable using SiO2. A g... | 04/17/2007 |
| 7205620 | Highly reliable amorphous high-k gate dielectric ZrON A gate dielectric and method of fabricating a gate dielectric that produces a more reliable and thinner equivalent oxide thickness than conventional SiO2 gate oxides are provided. Gate dielectrics formed from metals such as zirconium are thermodynamically... | 04/17/2007 |
| 7192888 | Low selectivity deposition methods A deposition method includes forming a nucleation layer over a substrate, forming a layer of a first substance at least one monolayer thick chemisorbed on the nucleation layer, and forming a layer of a second substance at least one monolayer thick chemisorbed on the... | 03/20/2007 |
| 7192892 | Atomic layer deposited dielectric layers An atomic layer deposited dielectric layer and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Depositing a hafnium metal layer on a substrate sur... | 03/20/2007 |
| 7183186 | Atomic layer deposited ZrTiOfilms After pulsing the second purging gas, a zirconium-containing precursor is pulsed into reaction chamber 220, at block 430. In an embodiment, the zirconium-containing precursor is ZTB. In other embodiments, a zirconium-containing precursor includes but i... | 02/27/2007 |
| 7166233 | Pulsed plasma processing method and apparatus In a method for performing a plasma-assisted treatment on a substrate in a reactor chamber by: introducing at least one process gas into the reactor chamber; and creating a plasma within the reactor chamber by establishing an RF electromagnetic field within the cham... | 01/23/2007 |
| 7153542 | Assembly line processing method An apparatus for sequential processing of a workpiece comprises an assembly line processing system. The apparatus comprises multiple workpieces moving in an assembly line fashion under multiple process stations. The multiple process stations provide different proces... | 12/26/2006 |
| 7135421 | Atomic layer-deposited hafnium aluminum oxide A dielectric film containing HfAlO3 and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO2. A gate dielectric is formed by atomic layer depos... | 11/14/2006 |
| 7112453 | Retentate chromatography and protein chip arrays with applications in biology and medicine This invention provides methods of retentate chromatography for resolving analytes in a sample. The methods involve adsorbing the analytes to a substrate under a plurality of different selectivity conditions, and detecting the analytes retained on the substrate by d... | 09/26/2006 |
| 7101813 | Atomic layer deposited Zr-Sn-Ti-O films A dielectric film containing atomic layer deposited Zr—Sn—Ti—O and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Depositing titanium and ox... | 09/05/2006 |
| 7084078 | Atomic layer deposited lanthanide doped TiOx dielectric films A dielectric film containing atomic layer deposited lanthanide doped TiOx and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. The lantha... | 08/01/2006 |
| 7052918 | Multi-layer film for thin film structure, capacitor using the same and fabrication method thereof A multi-layer film for a thin film structure, a capacitor using the multi-layer film and methods for fabricating the multi-layer film and the capacitor, the multi-layer film including a composition transition layer between a lower material layer and an upper materia... | 05/30/2006 |
| 7045430 | Atomic layer-deposited LaAlO3 films for gate dielectrics A dielectric film containing LaAlO3 and method of fabricating a dielectric film contained LaAlO3 produce a reliable gate dielectric having a thinner equivalent oxide thickness than attainable using SiO2. The LaAlO3 gate di... | 05/16/2006 |
| 6958302 | Atomic layer deposited Zr-Sn-Ti-O films using TiI4 A dielectric film containing Zr—Sn—Ti—O formed by atomic layer deposition using a TiI4 precursor and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable usin... | 10/25/2005 |
| 6902620 | Atomic layer deposition systems and methods Atomic layer deposition systems and methods are disclosed utilizing a multi-wafer sequential processing chamber. The process gases are sequentially rotated among the wafer stations to deposit a portion of a total deposition thickness on each wafer at each station. A... | 06/07/2005 |
| 6767587 | Hydrophobic coating compositions, articles coated with said compositions, and processes for manufacturing same Hydrophobic coating compositions are provided as are processes to coat articles with the compositions. Extremely hydrophobic coatings are provided by the compositions. Durable, weatherable and scratch-resistant coatings are provided by compositions comprising a trif... | 07/27/2004 |
| 6692844 | Glaze for ceramic superplastic forming (SPF) dies The life of ceramic SPF dies can be enhanced significantly by plasma spray application of a cordierite glaze on the forming surface. The preferred glaze has a coefficient of thermal expansion close to or matching with the ceramic of the die, and, typicall... | 02/17/2004 |
| 6574993 | Method of manufacturing a preform exhibiting a precisely defined refractive index profile by means of a chemical vapor deposition (CVD) technique The present invention relates to a method of applying glass layers, which may or may not be doped, to the interior of a substrate tube by means of a chemical vapor deposition (CVD) technique, using a reactive gas mixture, in order to obtain a preform that... | 06/10/2003 |
| 6485791 | Method for improving the performance of oxidizable ceramic materials in oxidizing environments Improved adhesion of thermal barrier coatings to nonmetallic substrates using a dense layer of ceramic on an underlying nonmetallic substrate that includes at least one oxidizable component. The improved adhesion occurs because the application of the dens... | 11/26/2002 |
| 6413579 | Temperature control of CVD method for reduced haze The invention is a method of making a coated glass substrate having a low haze. A soda-lime glass substrate having at least one surface upon which a coating may be deposited is provided. The glass substrate is heated and maintained at a temperature suffic... | 07/02/2002 |
| 6372290 | Method of making a temperature and scratch resistant anti-sticking coating The invention relates to a carrier material having an inorganic molecular structure and a surface coating produced by applying a substance and by heat treatment. The invention also relates to a method for the production and to the appropriate uses of said... | 04/16/2002 |
| 5286520 | Preparation of fluorine-doped tungstic oxide Fluorine-doped tungstic oxide is prepared by reacting together tungsten hexafluoride, an oxygen-containing compound, and a fluorine-containing compound.... | 02/15/1994 |
| 5262198 | Method of producing a carbon coated ceramic membrane and associated product A method of producing a carbon coated ceramic membrane including passing a selected hydrocarbon vapor through a ceramic membrane and controlling ceramic membrane exposure temperature and ceramic membrane exposure time. The method produces a carbon coated ... | 11/16/1993 |
| 5254392 | Anti-iridescence coatings A glazing article comprises a substrate bearing a substantially transparent coating comprising an optically functional topcoat and a thinner anti-iridescence layer undercoat mediate the topcoat and the substrate. The anti-iridescence layer eliminates or s... | 10/19/1993 |
| 5248545 | Anti-iridescent coatings with gradient refractive index A substantially transparent glazing article has an optically functional coating on a transparent substrate. The coating has an optically functional topcoat layer and an anti-iridescence layer between the topcoat and the substrate. The refractive index ant... | 09/28/1993 |
| 4946712 | Glass coating method and resulting article This disclosure is directed to a heat reflective glazing including a glass sheet having two generally planar parallel surfaces or sides with a multilayer coating on one of the side, and a method of producing such glazing. The side of the glass sheet havin... | 08/07/1990 |
| 4877651 | Process for thermally depositing silicon nitride and silicon dioxide films onto a substrate A thermal CVD process for forming silicon nitride-type or silicon dioxide-type films onto a substrate comprising the steps of: (a) introducing di-tert-butylsilane and at least one other reactant gas into a CVD reaction zone containing said substrate on which e... | 10/31/1989 |
| 4661381 | Continuous vapor deposition method for producing a coated glass article A continuous, chemical vapor deposition method for producing a coated glass article is disclosed. A glass substrate is advanced continuously, while hot, past first and second treating stations. A non-oxidizing atmosphere is maintained in the vicinity of t... | 04/28/1987 |
| 4612217 | Coating process for making non-iridescent glass structure This disclosure describes a novel method of coating a substrate, e.g., a transparent glass substrate, with a very thin inorganic coating of predetermined varying composition, e.g. an electrically-conductive tin oxide coating. The coating is carried out in... | 09/16/1986 |
| 4058430 | Method for producing compound thin films A method is provided for growing highly oriented compound thin films on a substrate by subjecting the substrate to the vapor of a first single element which can react with the surface at a temperature sufficiently high for the reaction to occur which form... | 11/15/1977 |
| 3952118 | Method for hot-end coating of glass containers The present invention relates to a method and apparatus for treating vitreous surfaces such as glass with a coating material introduced upwardly into a coating area or chamber from below a conveyor means which transports the article through such coating a... | 04/20/1976 |
