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| Number | Title | Issue Date |
| 8105647 | Method of forming oxide film and oxide deposition apparatus The present invention relates to an oxide film forming method and an oxide deposition apparatus, which make it possible to form an oxide film at a low temperature of 350° C. or less by respectively supplying a silicon-containing gas including at least one of SiH | 01/31/2012 |
| 8105648 | Method for operating a chemical deposition chamber A method for operating a chemical deposition chamber is disclosed. First, a digital liquid flow controller is provided to guide a precursor fluid into a chemical deposition chamber. Then, a pre-cleaning step is performed in the chemical deposition chamber. Later, a ... | 01/31/2012 |
| 8092862 | Method for forming dielectric film and method for forming capacitor in semiconductor device using the same Provided is a method for forming a dielectric film in a semiconductor device, wherein the method can improve a dielectric characteristic and a leakage current characteristic. According to specific embodiments of the present invention, the method for forming a dielec... | 01/10/2012 |
| 8092861 | Method of fabricating an ultra dielectric constant (K) dielectric layer A fabrication method of an ultra low-k dielectric layer is provided. A deposition process is performed, under the control of a temperature varying program or a pressure varying program, by reacting a dielectric matrix to form porous low-k dielectric layers with a gr... | 01/10/2012 |
| 8088440 | Hydrophobic coating including underlayer(s) deposited via flame pyrolysis A coated article is provided with a coating including at least one underlayer and a hydrophobic layer over at least the underlayer. The hydrophobic layer may have properties such as high contact angle θ. Hydrophobic properties of a multi-layer coating may be improv... | 01/03/2012 |
| 8084086 | Reliant thermal barrier coating system and related methods and apparatus of making the same A method and apparatus for forming a thermal barrier coating system (90) in communication with at least a portion of at least one substrate (92). The method includes: depositing a first bond coat (94) on at least a portion of at least one substr... | 12/27/2011 |
| 8080280 | Nanostructure templating using low temperature atomic layer deposition Methods are described for making nanostructures that are mechanically, chemically and thermally stable at desired elevated temperatures, from nanostructure templates having a stability temperature that is less than the desired elevated temperature. The methods compr... | 12/20/2011 |
| 8075953 | Thin organic alignment layers with a batch process for liquid crystal displays A method to form alignment layers on a substrate of an LCD is disclosed. The substrate is placed in a vacuum chamber and undergoes a purging process. The purging process heats the substrates and removes water vapor from the vacuum chamber. Specifically, the vacuum c... | 12/13/2011 |
| 8075952 | Power loading substrates to reduce particle contamination A method for preventing particle contamination within a processing chamber is disclosed. Preheating the substrate within the processing chamber may cause a thermophoresis effect so that particles within the chamber that are not adhered to a surface may not come to r... | 12/13/2011 |
| 8071163 | Deposition of Ta- or Nb-doped high-k films Methods and compositions for depositing high-k films are disclosed herein. In general, the disclosed methods utilize precursor compounds comprising Ta or Nb. More specifically, the disclosed precursor compounds utilize certain ligands coupled to Ta and/or Nb such as... | 12/06/2011 |
| 8071164 | Method for lubricating contacting surfaces A method is provided for tribological lubrication of sliding contact surfaces, where two surfaces are in contact and in motion relative to each other, operating in a vapor-phase environment containing at least one alcohol compound at a concentration sufficiently hig... | 12/06/2011 |
| 8071165 | Chemical vapor deposition method and system for semiconductor devices A method of and system for chemical vapor deposition of layers of material on substrates for producing semiconductor devices provides for continuous in-line processing. The method includes continuously conveying a plurality of substrates through a plurality of in-li... | 12/06/2011 |
| 8067061 | Reaction apparatus having multiple adjustable exhaust ports A reaction apparatus for a semiconductor fabrication apparatus, wherein the reaction apparatus includes at least two adjustable outlet ports for withdrawing reactant gases from the reaction chamber. Adjustment of the flow rate through each of the outlet ports select... | 11/29/2011 |
| 8057854 | Surface treatment method for coated cutting insert A surface treatment method can perform coated surface treatment on a cutting edge R and a rake surface, while maintaining a radius of curvature of the cutting edge R and uniformly surface-treating the rake surface. The surface treatment method includes providing an ... | 11/15/2011 |
| 8053029 | Method for fabricating CuInSthin film by metal organic chemical vapor deposition, CuInSthin film fabricated by the same and method for fabricating InSthin film therefrom Disclosed is a method for fabricating a CuInS2 thin film by metal-organic chemical vapor deposition (MOCVD). The method comprises fabricating a copper thin film by depositing an asymmetric copper precursor on a substrate by MOCVD and fabricating a CuInS | 11/08/2011 |
| 8048484 | Method for the deposition of a film by CVD or ALD Methods and apparatus for deposition of a film on a substrate in a reaction chamber by an atomic layer deposition (ALD) or chemical vapor deposition (CVD) process include providing one or more reactants, and providing a volatile neutral coordinating ligand capable o... | 11/01/2011 |
| 8043659 | Substrate processing apparatus and substrate processing method A substrate processing method capable of controlling the internal pressure of a processing chamber to a high pressure and exhausting gases within the processing chamber at a high rate. The substrate processing method is for use in a substrate processing apparatus ha... | 10/25/2011 |
| 8039051 | Method and apparatus for hydrogenation of thin film silicon on glass A method and apparatus is provided for hydrogenation of a target, such as a polycrystalline silicon film on a glass substrate, by using an atomic hydrogen source. The target is subjected to intermittent exposure of the atomic hydrogen field of the source until at le... | 10/18/2011 |
| 8039052 | Multi-region processing system and heads The various embodiments of the invention provide for relative movement of the substrate and a process head to access the entire wafer in a minimal space to conduct combinatorial processing on various regions of the substrate. The heads enable site isolated processin... | 10/18/2011 |
| 8039049 | Treatment of low dielectric constant films using a batch processing system A method and system for treating a dielectric film in a batch processing system includes exposing at least one surface of the dielectric film to a treating compound including a CxHy containing compound, where x and y represent integers greater ... | 10/18/2011 |
| 8039050 | Method and apparatus for strengthening a porous substrate A process is provided for strengthening a porous substrate. The process includes providing a substrate having intersecting fibers, where the intersecting fibers cooperate in the final substrate product to form an open pore network. Pathways are opened into the fibro... | 10/18/2011 |
| 8034407 | Chemical vapor deposition of high conductivity, adherent thin films of ruthenium A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium uppe... | 10/11/2011 |
| 8034409 | Methods, apparatuses, and systems for fabricating three dimensional integrated circuits The present invention pertains to methods, apparatuses, and systems for fabricating three-dimensional integrated circuits. One embodiment of the method comprises providing a wafer or other substrate having a plurality of through holes. In addition, the method includ... | 10/11/2011 |
| 8034406 | Integrated substrate processing in a vacuum processing tool A method and system are provided for integrated substrate processing in Cu metallization. The method includes providing a substrate in a vacuum processing tool containing a plurality of processing systems configured to process the substrate and a substrate transfer ... | 10/11/2011 |
| 8034408 | One-dimensional metal and metal oxide nanostructures Metal powder (such as tin, titanium, or tungsten powder) is heated in a flowing stream of an inert gas, such as argon, containing a small abundance of oxygen at a temperature to produce metal vapor. The metal reacts with the oxygen to form and deposit one-dimensiona... | 10/11/2011 |
| 8029858 | Methods of forming material on a substrate, and a method of forming a field effect transistor gate oxide on a substrate The invention includes methods of forming material on a substrate and methods of forming a field effect transistor gate oxide. In one implementation, a first species monolayer is chemisorbed onto a substrate within a chamber from a gaseous first precursor. The first... | 10/04/2011 |
| 8029859 | Method of depositing Ge-Sb-Te thin film There is provided a method of depositing a Ge—Sb—Te thin film, including: a Ge—Sb—Te thin-film forming step of feeding and purging a first precursor including any one of Ge, Sb and Te, a second precursor including another one of Ge, Sb and Te and a third pre... | 10/04/2011 |
| 8025922 | Enhanced deposition of noble metals The invention relates generally to processes for enhancing the deposition of noble metal thin films on a substrate by atomic layer deposition. Treatment with gaseous halides or metalorganic compounds reduces the incubation time for deposition of noble metals on part... | 09/27/2011 |
| 8017184 | β-diketiminate ligand sources and metal-containing compounds thereof, and systems and methods including same The present invention provides metal-containing compounds that include at least one β-diketiminate ligand, and methods of making and using the same. In certain embodiments, the metal-containing compounds include at least one β-diketiminate ligand with at least one... | 09/13/2011 |
| 8017182 | Method for depositing thin films by mixed pulsed CVD and ALD Films are deposited on a substrate by a process in which atomic layer deposition (ALD) is used to deposit one layer of the film and pulsed chemical vapor deposition (CVD) is used to deposit another layer of the film. During the ALD part of the process, a layer is fo... | 09/13/2011 |
| 8017183 | Organosiloxane materials for selective area deposition of inorganic materials An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a deposition inhibitor material to the substrate, wherein the deposition inhibitor material is an organosiloxane compound; and patterning the deposition i... | 09/13/2011 |
| 8007865 | Atomic layer deposition (ALD) method and reactor for producing a high quality layer One inventive aspect is related to an atomic layer deposition (ALD) method comprising: a) providing a semiconductor substrate in a reactor, b) providing a pulse of a first precursor gas into the reactor at a first ... | 08/30/2011 |
| 7998527 | Composite material and process for preparing a composite material The invention relates to a process for the preparation of a composite material, said composite material comprising a substrate and a layer on the substrate, comprising a vapor-depositing step in which a compound comprising a triazine compound is deposited on the sub... | 08/16/2011 |
| 7989021 | Vaporizing material at a uniform rate A method of vaporizing material at a uniform rate for forming a layer on a substrate includes feeding a column of vaporizable material from a temperature controlled region maintained below the vaporizable material's effective vaporization temperature to a source of ... | 08/02/2011 |
| 7989022 | Methods of processing substrates, electrostatic carriers for retaining substrates for processing, and assemblies comprising electrostatic carriers having substrates electrostatically bonded thereto A method of processing a substrate includes physically contacting an exposed conductive electrode of an electrostatic carrier with a conductor to electrostatically bond a substrate to the electrostatic carrier. The conductor is removed from physically contacting the... | 08/02/2011 |
| 7981471 | Processes for producing thin films and optical members A process for producing a thin film and an optical member which are free from discoloration of a lens and exhibit a good antistatic property and a good water repellency. The thin film is formed by a vacuum deposition of a water repellent solution which contains (a) ... | 07/19/2011 |
| 7976897 | Thermal chemical vapor deposition methods, and thermal chemical vapor deposition systems One embodiment thermal chemical vapor deposition method includes exposing a substrate within a chamber to first and second deposition precursors effective to thermally chemical vapor deposit a material on the substrate, and exhausting unreacted first and second depo... | 07/12/2011 |
| 7968146 | Hybrid layers for use in coatings on electronic devices or other articles A method for forming a coating over a surface is disclosed. The method comprises depositing over a surface, a hybrid layer comprising a mixture of a polymeric material and a non-polymeric material. The hybrid layer may have a single phase or comprise multiple phases... | 06/28/2011 |
| 7968145 | System and method for depositing a material on a substrate A method and apparatus for depositing a film on a substrate includes introducing a material and a carrier gas into a heated chamber. The material may be a semiconductor material, such as a cadmium chalcogenide. A resulting mixture of vapor and carrier gas containing... | 06/28/2011 |
| 7964241 | Film formation method and apparatus for semiconductor process An insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding gas or oxynitriding gas, a third process gas containing a bo... | 06/21/2011 |
