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Scientific American ; Jan. 2 edition, 1909
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| Number | Title | Issue Date |
| 7892513 | Group III nitride crystal and method of its growth Affords group III nitride crystal growth methods enabling crystal to be grown in bulk by a liquid-phase technique. One such method of growing group III nitride crystal from solution is provided with: a step of preparing a substrate having a principal face and includ... | 02/22/2011 |
| 7803344 | Method for growing group III-nitride crystals in a mixture of supercritical ammonia and nitrogen, and group III-nitride crystals grown thereby A method of growing group III-nitride crystals in a mixture of supercritical ammonia and nitrogen, and the group-III crystals grown by this method. The group III-nitride crystal is grown in a reaction vessel in supercritical ammonia using a source material or nutrie... | 09/28/2010 |
| 7771689 | Bulk synthesis of metal and metal based dielectric nanowires A process of synthesizing metal and metal nitride nanowires, the steps comprising of: forming a catalytic metal (such as gallium, and indium) on a substrate (such as fused silica quartz, pyrolytic boron nitride, alumina, and sapphire), heating the combination in a p... | 08/10/2010 |
| 7740823 | Method of growing III group nitride single crystal and III group nitride single crystal manufactured by using the same A method of growing a III group nitride single crystal by using a metal-organic chemical vapor deposition (MOCVD) process, the method including: preparing an r-plane (1-102) substrate; forming a nitride-based nucleation layer on the substrate; and growing a nonpolar... | 06/22/2010 |
| 7641880 | Room temperature synthesis of GaN nanopowder In the direct production of GaN by the metathesis of Li3N and GaCl3 or GaBr3 or GaI3, the reaction rate and yields can be greatly enhanced by including diethyl ether in the reaction system. ... | 01/05/2010 |
| 7632480 | Thermal expansion inhibitor, zero thermal expansion material, negative thermal expansion material, method for inhibiting thermal expansion, and method for producing thermal expansion inhibitor Provided is a thermal expansion inhibitor which has a much broader application range and which can be used with ease. Used is a thermal expansion inhibitor comprising a manganese nitride crystal. ... | 12/15/2009 |
| 7413721 | Method for forming ammonia A method for forming ammonia is disclosed and which includes the steps of forming a plasma; providing a source of metal particles, and supplying the metal particles to the plasma to form metal nitride particles; and providing a substance, and reacting the metal nitr... | 08/19/2008 |
| 7381391 | Method of making Group III nitrides The present invention provides compositions and a novel high-yielding process for preparing high purity Group III nitrides. The process involves heating a Group III metal and a catalytic amount of a metal wetting agent in the presence of a nitrogen source. Group III... | 06/03/2008 |
| 7354783 | Method for fabricating a semiconductor component based on GaN A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body a... | 04/08/2008 |
| 7273904 | Nanocrystals in ligand boxes exhibiting enhanced chemical, photochemical, and thermal stability, and methods of making the same Dendron ligands or other branched ligands with cross-linkable groups were coordinated to colloidal inorganic nanoparticles, including nanocrystals, and substantially globally cross-linked through different strategies, such as ring-closing metathesis (RCM), dendrimer... | 09/25/2007 |
| 7267896 | Magnetic tape and magnetic tape cartridge A magnetic recording medium comprising a non-magnetic support; at least one lower magnetic layer containing magnetic powder and a binder resin, which is formed on one side of the non-magnetic support with or without a non-magnetic primer layer interposed between the... | 09/11/2007 |
| 7255844 | Systems and methods for synthesis of gallium nitride powders A method of producing high quality GaN powder by combining high purity gallium and high purity ammonia in a tube reactor under controlled conditions. A reaction between the ammonia and gallium under the controlled conditions produces a porous gallium melt and to a f... | 08/14/2007 |
| 7250146 | Method for producing a reversible hydrogen storage medium with high storage capacity and ultrafast kinetics A method is provided for the preparation of a hydrogen storage medium having a high hydrogen storage capacity, high reversibility and fast reaction time. A high storage capacity Li3N-containing media with high reversibility is also provided. ... | 07/31/2007 |
| 7235819 | Semiconductor device having group III nitride buffer layer and growth layers An epitaxial growth system comprises a housing around an epitaxial growth chamber. A substrate support is located within the growth chamber. A gallium source introduces gallium into the growth chamber and directs the gallium towards the substrate. An activated nitro... | 06/26/2007 |
| 7232556 | Titanium comprising nanoparticles and related nanotechnology Nanoparticles comprising titanium, such as nanoscale doped titanium metal compounds, inorganic titanium compounds, and organic titanium compounds, their methods of manufacture, and methods of preparation of products from nanoparticles comprising titanium are provide... | 06/19/2007 |
| 7208393 | Growth of planar reduced dislocation density -plane gallium nitride by hydride vapor phase epitaxy A method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films. The method provides for a significant reduction in structural defect densities via a lateral overgrowth technique. High quality, uniform, thick m-plane GaN films a... | 04/24/2007 |
| 7192866 | Source alternating MOCVD processes to deposit tungsten nitride thin films as barrier layers for MOCVD copper interconnects An alternating source MOCVD process is provided for depositing tungsten nitride thin films for use as barrier layers for copper interconnects. Alternating the tungsten precursor produces fine crystal grain films, or possibly amorphous films. The nitrogen source may ... | 03/20/2007 |
| 7189358 | Integrated micropump analysis chip and method of making the same An integrated micropump or a plurality of integrated micropumps are communicated to a plurality of analysis chambers. A plurality of integrated analysis chambers include integrated analysis devices to test a fluid for an analyte. The micropumps continuously or perio... | 03/13/2007 |
| 7160388 | Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride The present invention refers to an ammonobasic method for preparing a gallium-containing nitride crystal, in which gallium-containing feedstock is crystallized on at least one crystallization seed in the presence of an alkali metal-containing component in a supercri... | 01/09/2007 |
| 7144546 | Nitrided valve metals and processes for making the same Nitrided valve metals are described, such as nitrided tantalum and nitrided niobium. The nitrided valve metals preferably have improved flow properties, higher Scott Densities, and/or improved pore size distribution which leads to improved physical properties of the... | 12/05/2006 |
| 7143806 | Fine particle generating apparatus casting apparatus and casting method A fine metal particle producing mechanism has a metal holder for housing a body of magnesium, a tube for supplying an argon gas to the body of magnesium, an argon gas flow rate controller for controlling a rate at which the argon gas is supplied to the tube, and an ... | 12/05/2006 |
| 7141228 | Method for calcium nitride synthesis The invention concerns a method for calcium nitride synthesis which consists in spraying in form of droplets, by means of a sprayer, a molten zinc-calcium alloy into a reactor containing nitrogen at high temperature. The resulting calcium nitride is collected in a c... | 11/28/2006 |
| 7138098 | Preparation of nanocrystallites A method of manufacturing a nanocrystallite from a M-containing salt forms a nanocrystallite. The nanocrystallite can be a member of a population of nanocrystallites having a narrow size distribution and can include one or more semiconductor materials. Semiconductin... | 11/21/2006 |
| 7125453 | High temperature high pressure capsule for processing materials in supercritical fluids A capsule for containing at least one reactant and a supercritical fluid in a substantially air-free environment under high pressure, high temperature processing conditions. The capsule includes a closed end, at least one wall adjoining the closed end and extending ... | 10/24/2006 |
| 7094691 | MOCVD of tungsten nitride thin films using W(CO)and NHfor copper barrier applications A method of forming a tungsten nitride thin film in an integrated circuit includes preparing a silicon substrate on a silicon wafer and placing the silicon wafer in a heatable chuck in a CVD vacuum chamber; placing a known quantity of a tungsten source in a variable... | 08/22/2006 |
| 7063741 | High pressure high temperature growth of crystalline group III metal nitrides A method of forming at least one single crystal of a Group III metal nitride. The method includes the steps of: providing a flux material and a source material comprising at least one Group III metal selected from the group consisting of aluminum, indium, and galliu... | 06/20/2006 |
| 7022303 | Single-crystal-like materials Polycrystalline materials of macroscopic size exhibiting Single-Crystal-Like properties are formed from a plurality of Single-Crystal Particles, having Self-Aligning morphologies and optionally ling morphology, bonded together and aligned along at least one, and up ... | 04/04/2006 |
| 7006343 | Capacitor In a capacitor comprising a pair of electrodes and a dielectric substance intervening between the two electrodes, one of the electrodes is composed of sintered niobium nitride. Preferably, the dielectric substance is composed of niobium oxide and the electrode other... | 02/28/2006 |
| 6995081 | Systems and methods for forming tantalum silicide layers A method of forming (and apparatus for forming) tantalum suicide layers (including tantalum silicon nitride layers), which are typically useful as diffusion barrier layers, on a substrate by using a vapor deposition process with a tantalum halide precursor compound,... | 02/07/2006 |
| 6972051 | Bulk single crystal gallium nitride and method of making same A single crystal M*N article, which may be made by a process including the steps of: providing a substrate of material having a crystalline surface which is epitaxially compatible with M*N; depositing a layer of single crystal M*N over the surface of the substrate; ... | 12/06/2005 |
| 6967159 | Systems and methods for forming refractory metal nitride layers using organic amines A method of forming (and apparatus for forming) refractory metal nitride layers (including silicon nitride layers), such as a tantalum nitride barrier layer, on a substrate by using an atomic layer deposition process (a vapor deposition process that includes a plura... | 11/22/2005 |
| 6958093 | Free-standing (Al, Ga, In)N and parting method for forming same A method of forming a free-standing (Al, Ga, In)N article, by the steps including: providing an expitaxially compatible sacrificial template; depositing single crystal (Al, Ga, In)N material on the template to form a composite sacrificial template/(Al, Ga, In)N arti... | 10/25/2005 |
| 6953703 | Method of making a semiconductor device with exposure of sapphire substrate to activated nitrogen An epitaxial growth system comprises a housing around an epitaxial growth chamber. A substrate support is located within the growth chamber. A gallium source introduces gallium into the growth chamber and directs the gallium towards the substrate. An activated nitro... | 10/11/2005 |
| 6929294 | Vehicle having a luminous unlocking handle and method of making said handle A vehicle particularly a passenger car, has an unlocking handle arranged in the vehicle interior for the opening operation of a lock of a closing element, such as a door, a flap, a hood, a lid, or the like, this unlocking handle having a luminous construction. In or... | 08/16/2005 |
| 6911083 | Method for producing powders made of gallium nitride and apparatus for producing the same In a creation section of GaN crystal nuclei, a gallium vapor and an ammonia gas are chemically reacted to create GaN crystal nuclei, which are transported into a growth section of GaN powders with a nitrogen carrier gas. In the growth section of GaN powders, a galli... | 06/28/2005 |
| 6872375 | Synthesis of hexammine cobaltic salts The invention provides an effective and efficient method of making a hexammine cobaltic salt, such as hexammine cobaltic nitrate, in a consistent fashion through the control of one or more selected parameters of manufacture. Specific parameters considered and evalua... | 03/29/2005 |
| 6861038 | Ceramics and method of producing ceramics A method of continuously producing a non-oxide ceramic formed of a metal constituent and a non-metal constituent. A salt of the metal constituent and a compound of the non-metal constituent and a compound of the non-metal constituent are introduced into a liquid alk... | 03/01/2005 |
| 6861130 | Sintered polycrystalline gallium nitride and its production Polycrystalline gallium nitride (GaN) characterized by having the atomic fraction of gallium ranging from between about 49% to 55%, an apparent density of between about 5.5 and 6.1 g/cm3, and a Vickers hardness of above about 1 GPa. Polycrystalline GaN ca... | 03/01/2005 |
| 6856500 | Capacitor In a capacitor comprising a pair of electrodes and a dielectric substance intervening between the two electrodes, one of the electrodes is composed of sintered niobium nitride. Preferably, the dielectric substance is composed of niobium oxide and the electrode other... | 02/15/2005 |
| 6831188 | Dihydrocarbylamino metal compounds This invention provides a process of preparing dihydrocarbylamido metal compounds. This process comprises bringing together, in a liquid reaction medium, at least one metal halide, MX4, where M is titanium, zirconium, or hafnium, and X is a halogen atom, ... | 12/14/2004 |
