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| Number | Title | Issue Date |
| 8124040 | Methods of making silane compositions A method of making hydrogenated Group IVA compounds having reduced metal-based impurities, compositions and inks including such Group IVA compounds, and methods for forming a semiconductor thin film. Thin semiconducting films prepared according to the present invent... | 02/28/2012 |
| 7910082 | Synthesis of ordered mesoporous carbon-silicon nanocomposites A method for preparing ordered mesoporous silicon carbide (OMSiC) nanocomposites uses an evaporation-induced self-assembly of a precursor composition that preferably includes a phenolic resin, pre-hydrolyzed tetraethyl orthosilicate, a surfactant, and butanol. The p... | 03/22/2011 |
| 7438884 | Silicon carbide with high thermal conductivity A chemical vapor deposited, β phase polycrystalline silicon carbide having a high thermal conductivity and reduced stacking faults. The silicon carbide is synthesized under specific conditions using hydrogen gas and methyltrichlorosilane gas as reactants. The therm... | 10/21/2008 |
| 7393514 | Carbide nanofibrils and method of making same A plurality of carbide, such as silicon carbide, tungsten carbide, etc., nanofibrils predominantly having diameters substantially less than about 100 nm and a method for making such carbide nanofibrils. The method includes the steps of: heating a plurality of carbon... | 07/01/2008 |
| 7242049 | Memory device A floating gate transistor has a reduced barrier energy at an interface with an adjacent gate insulator, allowing faster charge transfer across the gate insulator at lower voltages. Data is stored as charge on the floating gate. The data charge retention time on the... | 07/10/2007 |
| 7238308 | Process for the infiltration of porous carbon composites A process form producing ceramic composites comprising metal carbides, which comprises the steps production of a porous carbon-containing intermediate body, infiltration of the intermediate body with the melt of a carbon-forming metal, reaction of at least part of t... | 07/03/2007 |
| 7196929 | Method for operating a memory device having an amorphous silicon carbide gate insulator A floating gate transistor has a reduced barrier energy at an interface with an adjacent amorphous silicon carbide (a-SiC) gate insulator, allowing faster charge transfer across the gate insulator at lower voltages. Data is stored as charge on the floating gate. The... | 03/27/2007 |
| 7169666 | Method of forming a device having a gate with a selected electron affinity A floating gate transistor has a reduced barrier energy at an interface with an adjacent gate insulator, allowing faster charge transfer across the gate insulator at lower voltages. Data is stored as charge on the floating gate. The data charge retention time on the... | 01/30/2007 |
| 7154153 | Memory device A floating gate transistor has a reduced barrier energy at an interface with an adjacent gate insulator, allowing faster charge transfer across the gate insulator at lower voltages. Data is stored as charge on the floating gate. The data charge retention time on the... | 12/26/2006 |
| 7115221 | Method for producing graphite powder with an increased bulk density A method for increasing the Scott density of synthetic and/or natural graphite powders of any particle size distribution, preferably of highly-pure graphite, by subjecting the graphite powder to an autogenous surface treatment. The powder is used, in particular, for... | 10/03/2006 |
| 7108840 | Method for manufacturing nanophase TiC-based composite powders by metallothermic reduction Disclosed herein is a method for economically manufacturing high quality TiC powder, TiCN powder or ultrafine nanophase TiC+Ni (Co, Al) and TiCN+Ni (Co, Al) composite powders by means of metallothermic reduction. The method comprises the steps of preparing a startin... | 09/19/2006 |
| 7109548 | Operating a memory device A floating gate transistor has a reduced barrier energy at an interface with an adjacent gate insulator, allowing faster charge transfer across the gate insulator at lower voltages. Data is stored as charge on the floating gate. The data charge retention time on the... | 09/19/2006 |
| 7083771 | Process for producing silicon carbide fibers essentially devoid of whiskers Method for producing silicon carbide fibers by mixing discontinuous isotropic carbon fibers with a silica source and exposing the mixture to a temperature of from about 1450° C. to about 1800° C. The silicon carbide fibers are essentially devoid of whiskers have e... | 08/01/2006 |
| 7067414 | Low k interlevel dielectric layer fabrication methods A low k inter-level dielectric layer fabrication method includes providing a substrate having integrated circuitry at least partially formed thereon. An oxide-comprising inter-level dielectric layer including carbon and having a dielectric constant no greater than 3... | 06/27/2006 |
| 7048902 | Method for producing a porous carbon article and an article produced thereby A workpiece with transport porosity is formed. Nanopores are formed in the workpiece by a thermochemical treatment. The workpiece is formed as a rigid carbonaceous skeleton containing in its structure particles of one or more carbides, being selected and arranged in... | 05/23/2006 |
| 7041266 | Silicon carbide fibers essentially devoid of whiskers and products made therefrom Silicon carbide fibers are produced by mixing discontinuous isotropic carbon fibers with a silica source and exposing the mixture to a temperature of from about 1450° C. to about 1800° C. The silicon carbide fibers are essentially devoid of whiskers have excellent... | 05/09/2006 |
| 7029643 | Silicon carbide powder and method for producing the same A method of producing a silicon carbide powder comprising sintering a mixture containing at least a silicon source and a carbon source wherein the carbon source is a xylene-based resin. Preferable are an embodiment in which the above-mentioned silicon source is an a... | 04/18/2006 |
| 7005344 | Method of forming a device with a gallium nitride or gallium aluminum nitride gate A floating gate transistor has a reduced barrier energy at an interface between a gallium nitride (GaN) or gallium aluminum nitride (GaAlN) floating gate an adjacent gate insulator, allowing faster charge transfer across the gate insulator at lower voltages. Data is... | 02/28/2006 |
| 6965123 | Transistor with variable electron affinity gate and methods of fabrication and use A CMOS-compatible FET has a reduced electron affinity polycrystalline or microcrystalline SiC gate that is electrically isolated (floating) or interconnected. The SiC material composition is selected to establish the barrier energy between the SiC gate and a gate in... | 11/15/2005 |
| 6950338 | Method for operating a memory device having an amorphous silicon carbide gate insulator A floating gate transistor has a reduced barrier energy at an interface with an adjacent amorphous silicon carbide (a-SiC) gate insulator, allowing faster charge transfer across the gate insulator at lower voltages. Data is stored as charge on the floating gate. The... | 09/27/2005 |
| 6936565 | Modified carbide and oxycarbide containing catalysts and methods of making and using thereof Compositions including modified carbide-containing nanorods and/or modified oxycarbide-containing nanorods and/or modified carbon nanotubes bearing carbides and oxycarbides and methods of making the same are provided. Rigid porous structures including modified oxyca... | 08/30/2005 |
| 6936849 | Silicon carbide gate transistor A field-effect transistor (FET) device and method of fabrication uses an electrically interconnected polycrystalline or microcrystalline silicon carbide (SiC) gate having a lower electron affinity and higher work function than a polysilicon gate FET. The smaller thr... | 08/30/2005 |
| 6905992 | Ceramic body reinforced with coarse silicon carbide whiskers and method for making the same A ceramic composite made by compacting a starting powder blend. The composite includes between about 50 volume percent and about 99 volume percent of a ceramic matrix; and between about 1 volume percent and about 50 volume percent as-processed silicon carbide whiske... | 06/14/2005 |
| 6863759 | Methods for making composite bonded structures Techniques to bond two or more smaller bodies or subunits to produce a unitary SiC composite structure extend the capabilities of reaction-bonded silicon carbide, for example, by making possible the fabrication of complex shapes. In a first aspect of the present inv... | 03/08/2005 |
| 6861038 | Ceramics and method of producing ceramics A method of continuously producing a non-oxide ceramic formed of a metal constituent and a non-metal constituent. A salt of the metal constituent and a compound of the non-metal constituent and a compound of the non-metal constituent are introduced into a liquid alk... | 03/01/2005 |
| 6811761 | Silicon carbide with high thermal conductivity A chemical vapor deposited, β phase polycrystalline silicon carbide having a high thermal conductivity and reduced stacking faults. The silicon carbide is synthesized under specific conditions using hydrogen gas and methyltrichlorosilane gas as reactants. The therm... | 11/02/2004 |
| 6767523 | Whisker-free silicon carbide fibers Method for producing discontinuous silicon carbide fibers, useful as heating elements in a low-energy microwave field, from discontinuous carbonized cotton fibers employing an admixture of carbonized cotton fibers, a metal salt promoter, calcium oxalate monohydrate,... | 07/27/2004 |
| 6733736 | Silicon carbide powder and method for producing the same A method of producing a silicon carbide powder comprising sintering a mixture containing at least a silicon source and a carbon source wherein the carbon source is a xylene-based resin. Preferable are an embodiment in which the above-mentioned silicon source is an a... | 05/11/2004 |
| 6534026 | Low defect density silicon carbide A low defect (e.g., dislocation and micropipe) density silicon carbide (SiC) is provided as well as an apparatus and method for growing the same. The SiC crystal, grown using sublimation techniques, is preferably divided into two stages of growth. During ... | 03/18/2003 |
| 6514395 | Nanostructure-based high energy capacity material A nanostructure based material is capable of accepting-and reacting with an alkali metal such as lithium. The material exhibits a reversible capacity ranging from at least approximately 900 mAh/g-1,500 mAh/g. The high capacity of the material makes it att... | 02/04/2003 |
| 6436361 | Silicon carbide and process for its production Silicon carbide having a resistivity of from 103 to 106 Ω.multidot.cm and a powder X-ray diffraction peak intensity ratio of at least 0.005 as represented by Id1 /Id2 where Id1 is the peak intensity ... | 08/20/2002 |
| 6364944 | Method of making a multi-phase aggregate using a multi-stage process A method of making an aggregate having a carbon phase and a silicon-containing species phase is described and includes introducing a carbon black-yielding feedstock and a silicon-containing compound feedstock into different stages of a multi-stage reactor... | 04/02/2002 |
| 6334939 | Nanostructure-based high energy capacity material A nanostructure based material is capable of accepting and reacting with an alkali metal such as lithium. The material exhibits a reversible capacity ranging from at least approximately 900 mAh/g-1,500 mAh/g. The high capacity of the material makes it att... | 01/01/2002 |
| 6251353 | Production method of silicon carbide particles The present invention is to provide a production method of silicon carbide particles of high quality without generating a sulfur compound in the carbonizing and baking processes. More concretely, a production method of silicon carbide particles comprising... | 06/26/2001 |
| 6133120 | Boron-doped p-type single crystal silicon carbide semiconductor and process for preparing same A p-type silicon carbide semiconductor having a high carrier concentration and activation rate is provided by doping boron as an acceptor impurity in a single crystal silicon carbide. The boron occupies silicon sites in a crystal lattice of the single cry... | 10/17/2000 |
| 5997832 | Preparation of carbide nanorods A process utilizing a supported metal catalyst, a volatile species source, and a carbon source has been developed to produce carbide nanorods with diameters of less than about 100 nm and aspect ratios of 10 to 1000. The volatile species source, carbon sou... | 12/07/1999 |
| 5993770 | Silicon carbide fabrication An SiC film having an excellent strength and thermal characteristics. The SiC film is prepared by a CVD process (i.e. CVD-SiC fabrication) and has a thermal conductivity along the direction of the SiC crystal growth between 100 and 300 W/m.multidot.K, and... | 11/30/1999 |
| 5922300 | Process for producing silicon carbide fibers A process for producing silicon carbide fibers is provided, comprising the steps of mixing a silicon supply source powder including a mixture of silicon powder and silicon dioxide powder having a molar mixing ratio of 1:0.1 to 1:2 with activated carbon st... | 07/13/1999 |
| 5904762 | Method of making a multi-phase aggregate using a multi-stage process A method of making an aggregate comprising at least a carbon phase and a silicon-containing species phase is disclosed. The method involves introducing a first feedstock into a first stage of a multi-stage reactor, and introducing a second feedstock into ... | 05/18/1999 |
| 5876683 | Combustion flame synthesis of nanophase materials A low pressure combustion flame method for the production of nanophase powders, coatings and free-standing forms. The process involves controlled thermal decomposition of one or more metalorganic precursors in a flat-flame combustor unit in which both tem... | 03/02/1999 |
