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| Number | Title | Issue Date |
| 8043592 | Cascaded power plant process and method for providing reversibly usable hydrogen carriers in such a power plant process In a series of reactions for power plant energy generation designed to make beneficial use of oil bearing sands, oil bearing shale and other starting materials containing silicon dioxide, the silicon dioxide starting materials are combined with a primary energy prov... | 10/25/2011 |
| 7964171 | Process for producing silicon carbide ceramic micro tube with thin wall An improved process for producing a silicon carbide ceramic micro tubes (SiC micro tube) from a silicon-based polymer fiber by applying an ionizing radiation such that the surface part of the fiber selectively undergoes oxidative crosslinking, extracting the uncross... | 06/21/2011 |
| 7959887 | Method for manufacturing a diamond composite A method for manufacturing a diamond composite, includes: a) mixing diamonds with additives, the mixture comprising at least 50 wt % and less than 95 wt % of diamonds and more than 5 wt % additives; b) forming a work piece from the mixture using a pressure of at lea... | 06/14/2011 |
| 7939044 | Method of manufacturing sub-micron silicon-carbide powder A method of manufacturing a silicon carbide powder with submicron size of powder particles wherein a homogeneous reactant mixture comprising a source of silicone, a source of carbon, and polytetrafluoroethylene is locally preheated in a sealed reaction chamber fille... | 05/10/2011 |
| 7807123 | Method of manufacturing silicon carbide A method of manufacturing silicon carbide including reacting, in a temperature range of 370 to 800° C., (A) one selected from the group consisting of an alloy containing at least an Si element and one or more kinds of transition metal elements, a mixture containing... | 10/05/2010 |
| 7799305 | Silicon carbide single crystal and single crystal wafer The present invention provides a semi-insulating silicon carbide single crystal characterized by having an electrical resistivity at room temperature of 1×105 Ωcm or more, and a semi-insulating silicon carbide single crystal characterized by having an e... | 09/21/2010 |
| 7763224 | Method for siliconizing carbon-containing materials A method for treating workpieces that consist of porous carbon material with liquid silicon with the formation of silicon carbide, comprising the steps: Preheating porous carbon workpieces under inert gas to the selected operating temperature TB1, feeding... | 07/27/2010 |
| 7638108 | High purity silicon-containing products Silicon-containing products, such as silicon, silicon carbide and silicon nitride, containing less than 0.01 weight percent total mineral impurities and selectively determined carbon-to-silicon ratios. The products are derived from plant matter, such as rice hulls a... | 12/29/2009 |
| 7588745 | Silicon-containing products A method for producing carbon-silica products from silica-containing plant matter such as rice hulls or straw by leaching with sulfuric acid to remove non-silica minerals and metal while adjusting the mole ratio of fixed carbon to silica in the resultant product. Th... | 09/15/2009 |
| 7569201 | Method of manufacturing honeycomb structure and silicon carbide particle for manufacturing the same A method of manufacturing a honeycomb structure. (1) Water is added to silicon carbide particles and kneaded into a kneaded raw material. The silicon carbide particles have an average particle diameter of not less than 2 μm and not more than the honeycomb rib thick... | 08/04/2009 |
| 7521034 | 3C-SiC nanowhisker 3C-SiC nanowhisker and a method of synthesizing 3C-SiC nanowhisker wherein its diameter and length can be controlled. The method is safe and low cost, and the whisker can emit visible light of various wavelengths. 3C-SiC nanowhisker is formed by depositing thin film... | 04/21/2009 |
| 7485278 | Method for making silicon carbide whiskers A ceramic composite made by compacting a starting powder blend. The composite includes between about 50 volume percent and about 99 volume percent of a ceramic matrix; and between about 1 volume percent and about 50 volume percent as-processed silicon carbide whiske... | 02/03/2009 |
| 7479265 | Catalytic filter based on silicon carbide (β-SiC) for combustion of soot derived from exhaust gases from an internal combustion engine This invention relates to β-SiC foam parts with a specific surface area preferably equal to at least 5 m2/g and with at least two zones A and B with a different cellular porosity distribution, wherein the parts were made by chemical transformation of a p... | 01/20/2009 |
| 7438884 | Silicon carbide with high thermal conductivity A chemical vapor deposited, β phase polycrystalline silicon carbide having a high thermal conductivity and reduced stacking faults. The silicon carbide is synthesized under specific conditions using hydrogen gas and methyltrichlorosilane gas as reactants. The therm... | 10/21/2008 |
| 7438880 | Production of high purity ultrafine metal carbide particles The production of ultrafine metal carbide powders from solid metal carbide and nitrogen-containing material is disclosed. The starting materials are fed together or separately to a plasma system where the solid metal carbide is melted and/or vaporized in the presenc... | 10/21/2008 |
| 7393514 | Carbide nanofibrils and method of making same A plurality of carbide, such as silicon carbide, tungsten carbide, etc., nanofibrils predominantly having diameters substantially less than about 100 nm and a method for making such carbide nanofibrils. The method includes the steps of: heating a plurality of carbon... | 07/01/2008 |
| 7364714 | 3C-SIC nanowhisker and synthesizing method and 3C-SIC nanowhisker 3C—SiC nanowhisker and a method of synthesizing 3C—SiC nanowhisker wherein its diameter and length can be controlled. The method is safe and low cost, and the whisker can emit visible light of various wavelengths. 3C—SiC nanowhisker is formed by depositing thi... | 04/29/2008 |
| 7357910 | Method for producing metal oxide nanoparticles Method for producing metal oxide nanoparticles. The method includes generating an aerosol of solid metallic microparticles, generating plasma with a plasma hot zone at a temperature sufficiently high to vaporize the microparticles into metal vapor, and directing the... | 04/15/2008 |
| 7338202 | Ultra-high temperature micro-electro-mechanical systems (MEMS)-based sensors Novel micro electro mechanical systems (MEMS)-based sensors for use in ultra-high temperature environments are disclosed. The MEMS-based sensors are derived from a class of polymer-derived ceramics selected from the group consisting of SiCN, SiBCN and SiAlCN. The ma... | 03/04/2008 |
| 7335250 | Dental composites based on X-ray-opaque mixed oxides prepared by flame spraying The present invention relates to dental composites comprising at least one nanoparticulate mixed oxide (a) of SiO2 with X-ray-opaque metal oxides of one or more elements selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, ... | 02/26/2008 |
| 7318844 | Laser-irradiated metallized electroceramic The manufacturing method for an electroceramic component (1), for example a varistor (1), comprises a laser irradiation of a part (5; 6) of the surface of an electroceramic body (2) before a metallization (3; 4) is applied to the p... | 01/15/2008 |
| 7300492 | Ammonium dodecamolybdomolybdate and method of making A novel molybdenum compound, ammonium dodecamolybdomolybdate (AMM), is described which may be used in the manufacture of molybdenum metal and molybdenum carbide powders. The molybdenum compound is a dodecaheteropoly acid salt having a Keggin-type structure wherein m... | 11/27/2007 |
| 7294324 | Low basal plane dislocation bulk grown SiC wafers A high quality single crystal wafer of SiC is disclosed. The wafer has a diameter of at least about 3 inches (75 mm) and at least one continuous square inch (6.25 cm2) of surface area that has a basal plane dislocation volume density of less than about 50... | 11/13/2007 |
| 7289230 | Wireless substrate-like sensor A wireless substrate-like sensor is provided to facilitate alignment and calibration of semiconductor processing systems. The wireless substrate-like sensor includes an optical image acquisition system that acquires one or more images of targets placed within the se... | 10/30/2007 |
| 7283255 | Wireless substrate-like sensor A wireless substrate-like sensor is provided to facilitate alignment and calibration of semiconductor processing systems. The wireless substrate-like sensor includes an optical image acquisition system that acquires one or more images of targets placed within the se... | 10/16/2007 |
| 7276117 | Method of forming semi-insulating silicon carbide single crystal Embodiments related to a method of forming semi-insulating silicon carbide (SiC) single crystal are disclosed in which shallow donor levels originating, at least in part, from residual nitrogen impurities are compensated by the addition of one or more trivalent elem... | 10/02/2007 |
| 7270794 | Process for recovering useful products and energy from siliceous plant matter In the process disclosed herein, siliceous plant matter is steeped in water, soaked in an aqueous solution containing a solute which solubilizes inorganic oxides, soaked in an aqueous solution containing an oxidizing solute, rinsed, dried and thermally pyrolyzed to ... | 09/18/2007 |
| 7258722 | Process for manufacturing ultra fine TiC-transition metal-based complex powder Any one of a Ti-containing water-soluble salt, metatitanic acid (TiO(OH)2) slurry and ultra fine titanium oxide powder, and a transition metal containing metal salt are dissolved in water to prepare a raw material mixture. The raw material is spray-dried ... | 08/21/2007 |
| 7253134 | Silicon carbide-based catalytic body and process for producing the same The silicon carbide-based catalytic body of the present invention comprises: a porous body of given shape comprising a first bonded structure formed by bonding a large number of silicon carbide particles as an aggregate to each oth... | 08/07/2007 |
| 7244685 | Silicon carbide porous body, process for producing the same and honeycomb structure A silicon carbide porous body of the present invention, comprising silicon carbide particles and metallic silicon bonded together in such a manner that pores are retained between the silicon carbide particles and/or between the silicon carbide particle and metallic ... | 07/17/2007 |
| 7227066 | Polycrystalline optoelectronic devices based on templating technique Methods for passivating crystalline grains in an active layer for an optoelectronic device and optoelectronic devices having active layers with passivated crystalline grains are disclosed. Crystalline grains of an active layer material and/or window layer material a... | 06/05/2007 |
| 7196417 | Method of manufacturing a low expansion material and semiconductor device using the low expansion material A mold is filled with unsintered SiC particles and a melt of Al or of an Al alloy containing Si is poured into the mold for high pressure casting. Owing to the SiC particles and Si precipitated upon casting, a low expansion material having a low thermal expansion co... | 03/27/2007 |
| 7179561 | Nanowire-based membrane electrode assemblies for fuel cells The present invention discloses nanowires for use in a fuel cell comprising a metal catalyst deposited on a surface of the nanowires. A membrane electrode assembly for a fuel cell is disclosed which generally comprises a proton exchange membrane, an anode electrode,... | 02/20/2007 |
| 7175704 | Method for reducing defect concentrations in crystals A method for removing defects at high pressure and high temperature (HP/HT) or for relieving strain in a non-diamond crystal commences by providing a crystal, which contains defects, and a pressure medium. The crystal and the pressure medium are disposed in a high p... | 02/13/2007 |
| 7166523 | Silicon carbide and method of manufacturing the same In a method of manufacturing a silicon carbide substance, such as a film, a layer, a semiconductor, which is doped with an impurity, a carbonization process is executed after formation of a doped silicon substance which is obtained by carrying out a silicon depositi... | 01/23/2007 |
| 7160838 | Metal oxide-coated SiC foam carriers for catalysts, and catalytic systems therefor A catalyst carrier including a surface layer of oxygen-donating oxide, particularly cerine, is disclosed. A catalytic phase deposited on said carrier generally includes platinum and rhodium, thus forming a catalytic system for exhaust pipes, said catalytic phase bei... | 01/09/2007 |
| 7153340 | Process for manufacturing nano-phase TaC-transition metal based complex powder Ultra fine TaC-transition metal based complex powder is prepared by: dispersing a mixture of a Ta-containing material and a transition metal-containing water soluble salt into a solvent; stirring the mixture and spray-drying the stirred material to obtain precursor ... | 12/26/2006 |
| 7150850 | Process for producing silicon carbide sinter jig The present invention provides a sintered silicon carbide jig production method capable of simply increasing the purity of a sintered silicon carbide jig. A method of producing a sintered silicon carbide jig comprising a process in which a second sintered body is he... | 12/19/2006 |
| 7135072 | Methods of fabricating silicon carbide crystals Methods for producing silicon carbide crystals, seed crystal holders and seed crystal for use in producing silicon carbide crystals and silicon carbide crystals are provided. Silicon carbide crystals are produced by forcing nucleation sites of a silicon carbide seed... | 11/14/2006 |
| 7135074 | Method for manufacturing silicon carbide single crystal from dislocation control seed crystal A method for manufacturing a silicon carbide single crystal includes the steps of: preparing a seed crystal with a screw dislocation generation region; and growing the single crystal on a growth surface of the seed crystal. The generation region occupies equal to or... | 11/14/2006 |
