Class 423/328.2 - Crystalline

Subclass of Class 423 - Chemistry of inorganic compounds
Definition: Products and processes in which the products have geometrically
No. of patents: 292
Last issue date: 02/16/2010

«First «Previous1 2 3 4 5 6 7 8 Next»Last»

Number	Title	Issue Date
7662354	Deodorant The present invention relates to use of an aluminosilicate particle for deodorization, wherein the aluminosilicate particle has the composition of: s M(1)xOy t M(2)2O.Al2O3 u SiO2 v RmQ	02/16/2010
7655207	Aluminum complex hydroxide salt and method of producing the same An aluminum complex hydroxide salt having Al oxide octahedral layers and a divalent anion among the octahedral layers, wherein an aluminosilicate anion expressed by the following general formula (1), [NapAlqSirOz...	02/02/2010
7442355	Indium phosphide substrate and indium phosphide monocrystal and method of manufacturing thereof An indium phosphide substrate for semiconductor devices is obtained as follows. In order to have the direction of growth of the crystal in the orientation, a seed crystal having a specified cross-sectional area ratio with the crystal body is placed at the lowe...	10/28/2008
7422732	Synthesis of amines using molecular sieve SSZ-74 The present invention relates to new crystalline molecular sieve SSZ-74 prepared using a hexamethylene-1,6-bis-(N-methyl-N-pyrrolidinium)dication as a structure-directing agent, and its use in catalysts for synthesizing amines. ...	09/09/2008
7416714	Preparation of hydroxysodalite The invention is directed to a process and method for forming synthetic hydroxysodalite from nepheline and feldspar and/or nepheline syenite. A caustic material such as a solution of sodium hydroxide is combined with the nepheline and feldspar and/or nepheline syeni...	08/26/2008
7390359	Nitride semiconductor wafer A nitride semiconductor substrate having properties preferable for the manufacture of various nitride semiconductor devices is made available, by specifying or controlling the local variation in the off-axis angle of the principal surface of the nitride semiconducto...	06/24/2008
7381392	Silicon feedstock for solar cells The present invention relates to silicon feedstock for producing directionally solidified silicon ingots, thin sheets and ribbons for the production of silicon wafers for PV solar cells where the silicon feedstock contains between 0.2 and 10 ppma boron and between 0...	06/03/2008
7378071	Silicon wafer and method for producing silicon single crystal A method for growing a silicon single crystal ingot by a Czochralski method, which is capable of providing silicon wafers having very uniform in-plane quality and which results in improvement of semiconductor device yield. A method is provided for producing a silico...	05/27/2008
7378076	Process for production of macrostructures of a microporous material The invention involves a process for production of macrostructures of a microporous material. The process is characterized by the fact that seeds formed in or introduced by ion exchange or adsorption to a porous organic ion exchanger with the desired size, shape and...	05/27/2008
7374741	Method for growing silicon single crystal and silicon wafer In this method for growing a silicon single crystal, an ambient gas where a single crystal is grown contains a gas hydrogen-containing substance, and a silicon single crystal is grown at a pull rate to form a dislocation cluster defect occurrence region at least in ...	05/20/2008
7374817	Topological crystal of transition metal chalcogenide and method of forming the same Disclosed is a transition-metal chalcogenide crystal having a topological configuration/structure. A micro-droplet of a chalcogen element, such as S, Se or Te, is condensed and circulated in suspended form in an atmosphere containing a Group IVb, Vb or VI transition...	05/20/2008
7368763	Semiconductor device and manufacturing method thereof A high quality silicon carbide (SiC) layer being substantially lower in threading dislocation density than a prior layer is formed on silicon (Si) substrate. A semiconductor device is fabricated in such a way that a semiconductor buffer layer containing Si in part a...	05/06/2008
7364618	Silicon wafer, method for manufacturing the same and method for growing silicon single crystals This silicon wafer is obtained from a silicon single crystal grown by the CZ method in a hydrogen-containing inert gas atmosphere, and is a completely grown-in defect-free wafer containing no COPs or dislocation clusters throughout the wafer in the thickness and rad...	04/29/2008
7344689	Silicon wafer for IGBT and method for producing same A silicon wafer for an IGBT is produced by forming an ingot having an interstitial oxygen concentration [Oi] of not more than 7.0×1017 atoms/cm3 by the Czochralski method; doping phosphorus in the ingot by neutron beam irradiation to the ingot...	03/18/2008
7341787	Process for producing highly doped semiconductor wafers, and dislocation-free highly doped semiconductor wafers The invention relates to a process for producing highly doped semiconductor wafers, in which at least two dopants which are electrically active and belong to the same group of the periodic system of the elements are used for the doping. The invention also relates to...	03/11/2008
7338982	Functionalized mesoporous silicate structures, and related processes A mesoporous material is described. It includes a network of interconnected pores within an L3 phase structure. The pores include pore walls of a silicate material functionalized with at least one metal cation—usually a transition metal. Articles which include the...	03/04/2008
7329317	Method for producing silicon wafer The present invention is to produce a silicon crystal wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so that the boron concentration in the silicon crystal is no less than 1×1018 atoms/cm3 an...	02/12/2008
7326395	Method for producing a single crystal and silicon single crystal wafer The present invention is a method for producing a single crystal in accordance with Czochralski method by flowing an inert gas downward in a chamber 1 of a single crystal-pulling apparatus 11 and surrounding a single crystal 3 pulled from a raw ...	02/05/2008
7318916	Semiconductive GaAs wafer and method of making the same A semiconductive GaAs wafer has a diameter of 4 inches or more, and an in-wafer plane dislocation density of 30,000/cm2 or more and 100,000/cm2 or less. A semiconductive GaAs wafer is made by growing a GaAs single crystal under a temperature gr...	01/15/2008
7311888	Annealed wafer and method for manufacturing the same The present invention provides an annealed wafer which has a wafer surface layer serving as a device fabricating region and having an excellent oxide film dielectric breakdown characteristic, and a wafer bulk layer in which oxide precipitates are present at a high d...	12/25/2007
7297319	Aluminosilicate compositions, preparation and use A metalloaluminosilicate composition includes an aluminosilicate composition having an aluminosilicate framework and containing at least one metal, wherein a substantial portion of the metal is incorporated into the aluminosilicate framework. A higher concentration ...	11/20/2007
7297318	Method of removing heavy metals from silicate sources during silicate manufacturing Methods for the removal of lead from a metal silicate during the process of manufacturing of such a material are provided. With the reliance upon lower cost starting silicon dioxide starting materials that are known to exhibit elevated amounts of heavy metal therein...	11/20/2007
7294324	Low basal plane dislocation bulk grown SiC wafers A high quality single crystal wafer of SiC is disclosed. The wafer has a diameter of at least about 3 inches (75 mm) and at least one continuous square inch (6.25 cm2) of surface area that has a basal plane dislocation volume density of less than about 50...	11/13/2007
7294207	Gas-admission element for CVD processes, and device The invention relates to a method for depositing especially, crystalline layers onto especially, crystalline substrates. At least two process gases are led into a process chamber of a reactor separately from each other, through a gas inlet mechanism above a heated s...	11/13/2007
7282190	Silicon layer production method and solar cell production method A solar cell is produced by dipping a multicrystalline silicon substrate 28 in a solution 24 containing silicon, growing a silicon layer on the substrate 28 while decreasing with time the temperature drop rate of the solution during the dipping ...	10/16/2007
7276219	Preparation of 157nm transmitting barium fluoride crystals with permeable graphite The present invention is directed to a method of making large diameter metal fluoride sungle crystals that can be used in optical lithograpby systems, for example, excimer laser that operate below 200 nm. In addition, the invention is directed to metal fluoride sing...	10/02/2007
7241375	Heavy hydrocarbon composition with utility as a heavy lubricant base stock A heavy hydrocarbon composition with utility as a heavy hydrocarbon base stock comprising at least 95 wt % paraffin molecules, of which at least 90 wt % are isoparaffin, containing hydrocarbon molecules having consecutive numbers of carbon atoms, is a liquid at 100�...	07/10/2007
7232481	Method to produce an anti-swelling mica A method to produce an anti-swelling mica having following steps: mixing powdery mica with an alkaline compound to form a mixture; heating the mixture at a temperature between 150° C.˜230° C. for lasting 30 minu...	06/19/2007
7232555	AIGaInN single-crystal wafer AlGaInN single-crystal wafer with alleviated cracking and improved utilization rate and cost effectiveness. A hexagonal AlxGayIn1−(x+y)N(0	06/19/2007
7226571	High resistivity silicon wafer and method for fabricating the same A high resistivity p type silicon wafer with a resistivity of 100 Ωcm or more, in the vicinity of the surface being formed denuded zone, wherein when a heat treatment in the device fabrication process is performed, a p/n type conversion layer due to thermal donor g...	06/05/2007
7226507	Method for producing single crystal and single crystal The present invention is a method for producing a single crystal of which a whole plane in a radial direction is a defect-free region with pulling the single crystal from a raw material melt in a chamber by Czochralski method, wherein a pulling condition is changed ...	06/05/2007
7211555	Process for preparing fine zeolite particles A process for efficiently preparing fine zeolite particles comprising synthesizing zeolite in the presence of an alkaline earth metal-containing compound and/or with controlling the preparation process of zeolite, thereby giving fine zeolite particles being composed...	05/01/2007
7208043	Silicon semiconductor substrate and preparation thereof A silicon semiconductor substrate has a structure possessing oxygen precipitate defects fated to form gettering sites in a high density directly below the defect-free region of void type crystals. The silicon semiconductor substrate is formed by heat-treating a sili...	04/24/2007
7204881	Silicon wafer for epitaxial growth, an epitaxial wafer, and a method for producing it There are disclosed a silicon wafer for epitaxial growth wherein the wafer is produced by slicing a silicon single crystal grown with doping nitrogen according to the Czochralski method (CZ method) in the region where at least the center of the wafer becomes V regio...	04/17/2007
7201885	Method of removing heavy metals from silicate sources during silicate manufacturing Methods for the removal of lead from a metal silicate during the process of manufacturing of such a material are provided. With the reliance upon lower cost starting silicon dioxide starting materials that are known to exhibit elevated amounts of heavy metal therein...	04/10/2007
7201942	Coating method A method for the production of coated substrates, such as OLEDs is disclosed, whereby at least one layer is deposited on the at least one substrate, by means of a condensation method and a solid and/or fluid precursor and, in particular, at least one sublimate sourc...	04/10/2007
7201838	Oxygenate treatment of dewaxing catalyst for greater yield of dewaxed product Fischer-Tropsch hydrocarbon synthesis using a cobalt catalyst is used to produce waxy fuel and lubricant oil hydrocarbons from synthesis gas derived from natural gas. The waxy hydrocarbons are hydrodewaxed, with reduced conversion to lower boiling hydrocarbons, by c...	04/10/2007
7197941	Method for selecting an insert on the basis of the mechanical resistance thereof A method for selecting a polymeric insert to be chosen for its mechanical strength qualities to be incorporated into construction of a laminated glazing. The method evaluates the tear strength of the insert, and evaluates adhesion of the insert to at least one glass...	04/03/2007
7166265	Process for the assembly of ultrastable mesostructured organofunctional silica compositions A process for the preparation of mesostructured organofunctional silica and silica-alumina compositions using a hydrolyzable organosilane compound is described. The process uses a water soluble silicate to form the compositions, which have hexagonal, wormhole or foa...	01/23/2007
7147711	Method of producing silicon wafer and silicon wafer The present invention provides a method for producing a silicon wafer, which comprises growing a silicon single crystal ingot having a resistivity of 100 Ω·cm or more and an initial interstitial oxygen concentration of 10 to 25 ppma and doped with nitrogen by the ...	12/12/2006

«First «Previous1 2 3 4 5 6 7 8 Next»Last»

PatentStorm

Bizarre Patents

PatentStorm News

Class 423/328.2 - Crystalline