The ice cream cone was invented at the St. Louis Worlds Fair by Ernest Hamwi in 1904. His waffle booth was next to an ice cream vendor who ran short of dishes. Hamwi rolled a waffle to hold ice cream and the cone was born.
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| Number | Title | Issue Date |
| 8137650 | Nanoporous carbide derived carbon with tunable pore size The present invention provides a method for producing a nanoporous carbide-derived carbon composition with a tunable pore structure and a narrow pore size. Also provided are compositions prepared by the method. ... | 03/20/2012 |
| 8012444 | Process and apparatus for generating hydrogen A solution is to be created, with a method and a device for generating hydrogen, in which silicon and/or an alloy that contains silicon is reacted in a reaction vessel (1), with an alkaline solution as a catalyst, so that the process, after starting, runs con... | 09/06/2011 |
| 7981392 | Hydride compounds with silicon and germanium core atoms and method of synthesizing same A method is provided for synthesizing silicon-germanium hydride compounds of the formula (H3Ge)4-XSiHX, wherein x=0, 1, 2 or 3. The method includes combining a silane triflate with a compound having a GeH3 ligand under con... | 07/19/2011 |
| 7901651 | Method of preparing zinc silicate-based phosphor and zinc silicate-based phosphor prepared using the method Provided are a method of preparing a zinc silicate-based phosphor and a zinc silicate-based phosphor prepared using the method. The method includes: (a) preparing a solution including a Zn precursor compound and a Si precursor compound; (b) adding a coprecipitant to... | 03/08/2011 |
| 7850938 | Silicon particles, silicon particle superlattice and method for producing the same A production method, comprising a step of synthesizing silicon particle-containing silicon oxide particles by performing a gas phase reaction of monosilane gas and oxidizing gas for oxidizing the monosilane gas and a step of removing the silicon oxide with hydrofluo... | 12/14/2010 |
| 7833504 | Silylated carbon nanotubes and methods of making same The invention provides adducts comprising a carbon nanotube with covalently attached silane moieties, and methods of making such adducts. Examples of silane moieties include trimethoxysilane; hexaphenyldisilane; silylphosphine; 1,1,1,3,5,5,5-heptamethyltrisiloxane; ... | 11/16/2010 |
| 7758838 | Method and apparatus for the production of ultrafine particles and related coating compositions Disclosed are methods for making ultrafine particles, apparatus for making ultrafine particles, and coating compositions comprising ultrafine particles made by such methods and/or apparatus. ... | 07/20/2010 |
| 7648690 | Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition Methods of making Si-containing films that contain relatively high levels of substitutional dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline... | 01/19/2010 |
| 7432015 | Negative active material for a rechargeable lithium battery, a method of preparing the same, and a rechargeable lithium battery comprising the same The negative active material for a rechargeable lithium battery of the present invention includes a carbonaceous material and a silicon-based compound represented by Formula 1: Si(1-y)MyO1+x (1) where 0 | 10/07/2008 |
| 7387767 | Recovery of nickel, cobalt, iron, silica, zinc and copper from laterite ore by sulfuric acid leaching A process for recovering nickel and cobalt values from nickel- and cobalt-containing laterite ores as an enriched mixed nickel and cobalt sulphide intermediate and for producing nickel and cobalt metal from the nickel and cobalt sulphide intermediate. The laterite o... | 06/17/2008 |
| 7378072 | Method for the preparation of aerogels A method for the preparation of aerogels that involves the exchange of the liquid present in the aquagel with xenon and the subsequent extraction thereof. ... | 05/27/2008 |
| 7332441 | Passivation of porous semiconductors A method is disclosed for stabilizing porous silicon. A porous silicon structure having a surface terminated with hydrogen atoms is subjected to organic thermal processing to substitute the hydrogen atoms with a protective organic layer. The resulting structures are... | 02/19/2008 |
| 7307056 | Disinfecting peroxosilicated compound with scale preventive effect, preparation method and use thereof The invention concerns a peroxosilicated, optionally phosphatized, disinfecting compound with scale preventive effect obtained by reacting an alkaline or alkaline-earth metasilicate with an active oxygen-releasing compound, for example potassium monopersulphate and/... | 12/11/2007 |
| 7303736 | Nanostructured materials for hydrogen storage A system for hydrogen storage comprising a porous nano-structured material with hydrogen absorbed on the surfaces of the porous nano-structured material. The system of hydrogen storage comprises absorbing hydrogen on the surfaces of a porous nano-structured semicond... | 12/04/2007 |
| 7294324 | Low basal plane dislocation bulk grown SiC wafers A high quality single crystal wafer of SiC is disclosed. The wafer has a diameter of at least about 3 inches (75 mm) and at least one continuous square inch (6.25 cm2) of surface area that has a basal plane dislocation volume density of less than about 50... | 11/13/2007 |
| 7252811 | Low temperature synthesis of silicon fibers This invention presents a process to produce bulk quantities of nanowires of a variety of semiconductor materials. Large liquid gallium drops are used as sinks for the gas phase solute, generated in-situ facilitated by microwave plasma. To grow silicon nanowires for... | 08/07/2007 |
| 7244513 | Stain-etched silicon powder The present invention is for a porous silicon powder comprising silicon particles wherein the outermost layers of said particles are porous. The present invention is also directed to a method of making this porous silicon powder using a stain etch method. The presen... | 07/17/2007 |
| 7241432 | Low temperature synthesis of semiconductor fibers This invention presents a process to produce bulk quantities of nanowires of a variety of semiconductor materials. Large liquid gallium drops are used as sinks for the gas phase solute, generated in-situ facilitated by microwave plasma. To grow silicon nanowires for... | 07/10/2007 |
| 7183018 | Electrode material for anode of rechargeable lithium battery, electrode structural body using said electrode material, rechargeable lithium battery using said electrode structural body, process for producing said electrode structural body, and process for producing said rechargeable lithium battery An electrode material for an anode of a rechargeable lithium battery, containing a particulate comprising an amorphous Sn.A.X alloy with a substantially non-stoichiometric ratio composition. For said formula Sn.A.X, A indicates at least one kind of an element select... | 02/27/2007 |
| 7166823 | Method of making a heating element of molybdenum silicide type and a heating element A method for the production of a heating element that is composed essentially of molybdenum silicide and alloys of that basic material, and a heating element formed from such material. A material is produced that contains substantially Mo(Si1-xAlx | 01/23/2007 |
| 7166796 | Method for producing a device for direct thermoelectric energy conversion In devices used for the direct conversion of heat into electricity, or vice versa, known in the art as thermoelectric power generators, thermoelectric refrigerators and thermoelectric heat pumps, the efficiency of energy conversion and/or coefficient of performance ... | 01/23/2007 |
| 7132091 | Single crystal silicon ingot having a high arsenic concentration A single crystal silicon ingot having a constant diameter portion that contains arsenic dopant atoms at a concentration which results in the silicon having a resistivity that is less than about 0.003 Ω·cm. ... | 11/07/2006 |
| 7125530 | Method of precipitating slags from flue gas with a ceramic The invention relates to a ceramic material comprising at least one transition metal silicate and/or transition metal disilicate. The ceramic material can be characterized by having one or more monosilicates, one or more disilicates and mixtures consisting of monosi... | 10/24/2006 |
| 7118967 | Protection of charge trapping dielectric flash memory devices from UV-induced charging in BEOL processing A method of protecting a charge trapping dielectric flash memory cell from UV-induced charging, including fabricating a charge trapping dielectric flash memory cell including a charge trapping dielectric charge storage layer in a semiconductor device; and during pro... | 10/10/2006 |
| 7091088 | UV-blocking etch stop layer for reducing UV-induced charging of charge storage layer in memory devices in BEOL processing A method of protecting a charge trapping dielectric flash memory cell from UV-induced charging, including fabricating a charge trapping dielectric flash memory cell in a semiconductor device; depositing over the charge trapping dielectric flash memory cell at least ... | 08/15/2006 |
| 7090815 | Nanometer engineering of metal-support catalysts A method of forming a catalyst body by forming a first layer of hemispherical grain polysilicon over a substrate, and oxidizing at least a portion of the first layer to form a second layer of silica. Additionally, forming a third layer of nitride material over the s... | 08/15/2006 |
| 7045170 | Anti-stiction coating for microelectromechanical devices A method for depositing an anti-stiction coating on a MEMS device comprises reacting the vapor of an amino-functionalized silane precursor with a silicon surface of the MEMS device in a vacuum chamber. The method can further comprise cleaning the silicon surface of ... | 05/16/2006 |
| 7034260 | Method of making a heating element of molybdenum silicide type A method of producing a heating element made from molybdenum silicide and alloys thereof, and which includes aluminum oxide on its surface. A material is produced that contains substantially Mo(Si1-xAlx)2 and Al2O3 | 04/25/2006 |
| 7033560 | Single source mixtures of metal siloxides This invention pertains to complex mixtures of the formula M is a metal having a valence of from 2–6, L1 is an anionic ligand and L2 is a siloxide or silyl amide ligand suited for producing stable thin-film metal silicates, v is equal to the valence of the metal, ... | 04/25/2006 |
| 7029513 | Reactant delivery apparatuses An aerosol delivery apparatus is used to deliver an aerosol into a reaction chamber for chemical reaction to produce reaction products such as nanoparticles. A variety of improved aerosol delivery approaches provide for the production of more uniform reaction produc... | 04/18/2006 |
| 7018896 | UV-blocking layer for reducing UV-induced charging of SONOS dual-bit flash memory devices in BEOL processing A method of protecting a SONOS flash memory cell from UV-induced charging, including fabricating a SONOS flash memory cell in a semiconductor device; and depositing over the SONOS flash memory cell at least one UV-protective layer, the UV-protective layer including ... | 03/28/2006 |
| 7008566 | Oligo phosphate-based electrode active materials and methods of making same The invention provides an electrochemical cell which includes a first electrode and a second electrode which is a counter electrode to said first electrode, and an electrolyte material interposed there between. The first electrode includes an active material having ... | 03/07/2006 |
| 6986873 | Method of producing a metal-containing single-phase composition A method of producing a single-phase composition Mn+1AzXn, primarily the production of the single-phase material Ti3SiC2, where n lies within a range of 0.8-3.2, where z lies within a range of 0.8-1.2, where M i... | 01/17/2006 |
| 6951636 | Nanometer engineering of metal-support catalysts A method of forming a catalyst body by forming a first layer of hemispherical grain polysilicon over a substrate, and oxidizing at least a portion of the first layer to form a second layer of silica. Additionally, forming a third layer of nitride material over the s... | 10/04/2005 |
| 6929950 | Microprojectile delivery system and particulate product The invention relates to a particulate product comprising at least one microprojectile; characterized in that the or at least one of the microprojectiles comprises silicon. The invention also relates to devices and components used in the microprojectile implantation... | 08/16/2005 |
| 6861038 | Ceramics and method of producing ceramics A method of continuously producing a non-oxide ceramic formed of a metal constituent and a non-metal constituent. A salt of the metal constituent and a compound of the non-metal constituent and a compound of the non-metal constituent are introduced into a liquid alk... | 03/01/2005 |
| 6838067 | Metamorphosed mineral compositions having internal lattice defects and methods of making A method of controllably altering the mineral matter transformation of mineral compositions such as, for example, vermiculitic micas, to achieve metamorphosed mineral compositions having specifically desired monatomic lattice defects is provided. Compositions formed... | 01/04/2005 |
| 6838047 | MEMS and MEMS components from silicon kerf The disclosure describes an economical and environmentally benign method for using crystalline silicon metal kerf recovered from wiresaw slurries towards the fabrication of complex MEMS and MEMS components, including MEMS packages, with improved design features.... | 01/04/2005 |
| 6797199 | Clathrate compounds, manufacture thereof, and thermoelectric materials, thermoelectric modules, semiconductor materials and hard materials based thereon In high-tech fields such as electronics, the development of new high performance materials which differ from conventional materials has received much attention. An object of the present invention is to provide a clathrate compound which can be used as a thermoelectr... | 09/28/2004 |
| 6793781 | Cathode targets of silicon and transition metal Silicon-chromium cathode targets having 5 to 80 weight percent chromium are used to sputter absorbing coatings of silicon-chromium-containing material in atmospheres of inert gas such as argon, reactive gases such as nitrogen, oxygen, and mixtures thereof to form me... | 09/21/2004 |