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Class 420/579 - ARSENIC BASE OR SELENIUM OR TELLURIUM BASE ALLOY CONTAINING METAL


Subclass of Class 420 - Alloys or metallic compositions
Definition: Alloy, or metallic composition containing over 50 percent arsenic by weight, or an alloy
No. of patents: 60
Last issue date: 05/06/2008


1    
NumberTitleIssue Date
7367119Method for forming a reinforced tip for a probe storage device
Systems and methods in accordance with the present invention can include a tip contactable with a media. In an embodiment, the tip comprises a substantially hollow structure formed of a metal. The tip can be formed by depositing a first metal layer over silicon ther...
05/06/2008
7336524Atomic probes and media for high density data storage
A device in accordance with embodiments of the present invention comprises a contact probe for high density data storage reading, writing, erasing, or rewriting. In one embodiment, the contact probe can include a silicon core having a conductive coating. Contact pro...
02/26/2008
7309630Method for forming patterned media for a high density data storage device
Systems in accordance with the present invention can include a tip contactable with a media, the media including a substrate and a plurality of cells disposed over the substrate, one or more of the cells being electrically isolated from the other of the cells by a m...
12/18/2007
7301887Methods for erasing bit cells in a high density data storage device
Methods in accordance with the present invention can be applied, in an embodiment, to a media comprising a phase change material to alter a resolved portion of the phase change material to have a resistance different from a resistance of the bulk material. A tip hav...
11/27/2007
7227817Low profile optical head
An optical head of a type useable in a optical disk reader/writer is provided. The optical head has a low profile, e.g., in a vertical direction parallel to the disk spin axis, such as less than about 5 mm preferably less than about 3 mm. Substantially all component...
06/05/2007
7191153Content distribution method and apparatus
Media which stores protected content is distributed to users without the need for payment at the time of media distribution. Payment can be performed at a later time in response to which content may be enabled, and/or users may selectively pay for, and receive enabl...
03/13/2007
7113474Increased data storage in optical data storage and retrieval systems using blue lasers and/or plasmon lenses
An optical recording medium includes a crystallizing layer for enhancing the crystallization of a phase change memory layer, an energy storage layer for aiding the state transformations of a phase change memory layer, and/or a modifying element for increasing absorp...
09/26/2006
7056471Ternary and quarternary nanocrystals, processes for their production and uses thereof
The present invention relates to nanocrystals consisting of a homogeneous ternary or quaternary alloy having the composition M11-xM2xA and M11-xM2xAyB1-y, respectively, a process for its production, a...
06/06/2006
6980652Combination mastered and writeable medium and use in electronic internet appliance
An optical medium uses a single structure or format (such as identical materials, layers and the like) for both a region for holding mastered data and a writeable area. In one aspect, a writeable region of a medium with mastered content is used in connection with pa...
12/27/2005
6914868Low profile optical head
An optical head of a type useable in a optical disk reader/writer is provided. The optical head has a low profile, e.g., in a vertical direction parallel to the disk spin axis, such as less than about 5 mm preferably less than about 3 mm. Substantially all component...
07/05/2005
6875377Gamma radiation source
A gamma radiation source comprising selenium-75 or a precursor therefore, wherein the selenium is provided in the form of one or more thermally stable compounds, alloys, or mixed metal phases. ...
04/05/2005
6273969Alloys and methods for their preparation
The present invention relates to an alloy comprising a first element A, a second element B, a third element C, and a fourth element D. In the alloy, first element A and second element B are present as a binary compound AB, and third element C and fourth e...
08/14/2001
6180269GaAs single crystal substrate and epitaxial wafer using the same
A GaAs single crystal substrate and an epitaxial wafer using the same suppress the generation of slips during growth of the epitaxial layer, and improve the breakdown withstanding characteristic of devices fabricated on such substrates. The GaAs single cr...
01/30/2001
5705695Quaternary Zintl composition (Et4 N)4 ›Au(Ag1-x Aux)2 Sn2 Te9 !
The quaternary Zintl material (Et4 N)4 ›Au(Ag1-x Aux)2 Sn2 Te9 ! that contains 1-D semiconducting chains composed of four metallic elements is prepared by treating ethylenediami...
01/06/1998
5523022Semiconductor compound
Novel compound semiconductors are of the general formula, X5 YZ4, wherein X is a member selected from the group consisting of Cu, Ag and mixtures thereof, Y is a member selected from the group consisting of Al Ga, Tl and mixtures the...
06/04/1996
5503475Method for determining the carbon equivalent, carbon content and silicon content of molten cast iron
In measuring a cooling curve by means of thermal analysis of cast iron, a compressed powder moulding or sintered moulding of tellurium, bismuth, boron, zinc and/or aluminum is fixed to the inner surface of a cooling curve measuring cup, and a melt is pour...
04/02/1996
5474591Method of synthesizing III-V semiconductor nanocrystals
The present invention relates, in general, to a method of synthesizing nanocrystals and, in particular, to a method of synthesizing III-V semiconductor nanocrystals in solution at a low temperature and in a high yield. The method comprises the combination...
12/12/1995
5458867Process for the chemical preparation of bismuth telluride
A process for producing bismuth telluride including dissolving tellurium to form a first solution; heating the first solution to approximately 70° C.; stirring the first solution; slowly and quantatively adding an amount of bismuth trioxide (Bi2
10/17/1995
5427716Compound semiconductors and semiconductor light-emitting devices using the same
Novel compound semiconductors are of the general formula, X5 YZ4, wherein X is a member selected from the group consisting of Cu, Ag and mixtures thereof, Y is a member selected from the group consisting of Al, Ga, Tl and mixtures thereof...
06/27/1995
5330708Sulfide alloys that exhibit thermal bistability
A new ternary sulfide alloy exhibits a metal-semiconductor phase transition with hysteresis as a function of temperature. One embodiment of the bistable material includes barium, cobalt, nickel and sulfur in amounts in accordance with the formula Ba(Co
07/19/1994
5217750Powder treatment process to control alloy fractionation
Disclosed is a process which comprises providing an alloy of selenium, preparing powdered particles of the alloy with an average particle diameter of less than 300 microns, placing the powdered particles into a container and tumbling the container, and su...
06/08/1993
5128099Congruent state changeable optical memory material and device
A state changeable memory alloy and device employing same. The memory alloy is capable of changing from a first state to a second state in response to the input of energy, such as projected optical beam energy, electrical energy or thermal energy. The all...
07/07/1992
5126168Preparation of group IIIA-VA compounds such as boron nitride, and of boron nitride films and coatings
Lewis base-borane complexes such as (CH3)2 S.BHBr2 are utilized as molecular precursors for the formation of both bulk powders, films and coatings of boron nitride. The complexes are subjected to slow heating under an ammo...
06/30/1992
5084301Alloying and coating process
Disclosed is an alloying process which comprises, in the order stated (1) heating in a reaction vessel a mixture of selenium and tellurium from ambient temperature to form about 270° C. to about 330° C. while maintaining the mixture in a quiescent state...
01/28/1992
5075191Process for controlling alloy fractionation
Disclosed is a process for treating particles of selenium alloy to reduce fractionation when the particles are subsequently vacuum evaporated onto a substrate which comprises (1) heating particles of an alloy of selenium and an alloying component selected...
12/24/1991
5035857Processes for preparing chalcogenide alloys
A process for the preparation of chalcogenide alloys which comprises crystallizing a chalcogenide alloy, grinding and pelletizing the crystallized product, and evaporating the alloy on, for example, a supporting substrate to form a photoreceptor....
07/30/1991
5002734Processes for preparing chalcogenide alloys
A process for the preparation of chalcogenide alloys which comprises crystallizing a chalcogenide alloy, grinding and pelletizing the crystallized product, and evaporating the alloy on, for example, a supporting substrate to form a photoreceptor....
03/26/1991
4904559Processes for suppressing the fractionation of chalcogenide alloys
A process for the preparation of chalcogenide alloy compositions which comprises providing a chalcogenide alloy; admixing therewith crystalline or amorphous selenium; and subsequently subjecting the resulting mixture to evaporation....
02/27/1990
4863508Process for the preparation of chalcogenide alloys by the solution oxidation of alkaline selenium and alkaline tellurium compounds
Disclosed is a process for the preparation of chalcogenide alloys, particularly selenium tellurium alloys, of high purify wherein there is provided a solution mixture of the aforementioned compounds; and thereafter this mixture is subjected to a simultane...
09/05/1989
4859411Control of selenium alloy fractionation
A process for controlling fractionation in selenium alloys comprising providing pellets of an alloy comprising amorphous selenium and an alloying component selected from the group consisting of tellurium, arsenic, and mixtures thereof, the particles havin...
08/22/1989
4855203Imaging members with photogenerating compositions obtained by solution processes
A layered photoresponsive imaging member comprised of a supporting substrate; an amorphous photoconductive layer and a hole transport layer dispersed in a resinous binder, which layer is formulated from a solution mixture; and wherein the photoconductive ...
08/08/1989
4822712Reduction of selenium alloy fractionation
An alloy treatment process is disclosed which comprises providing particles of an alloy comprising amorphous selenium and an alloying component selected from the group consisting of tellurium, arsenic, and mixtures thereof, the particles having an average...
04/18/1989
4798701Method of synthesizing amorphous group IIIA-group VA compounds
A method of synthesizing amorphous Group IIIA-Group VA compounds. A first solution is prepared which consists of a tris(trialkylsilyl) derivative of either a Group IIIA or Group VA element dissolved in an organic solvent. A second solution is then prepare...
01/17/1989
4756747Synthesis of new amorphous metallic spin glasses
Amorphous metallic precipitates having the formula (M1)a (M2)b wherein M1 is at least one transition metal, M2 is at least one main group metal and the integers "a" and "b" provide stoichio...
07/12/1988
4721539Large single crystal quaternary alloys of IB-IIIA-SE2 and methods of synthesizing the same
New alloys of Cux Ag.sub.(1-x) InSe2 (where x ranges between 0 and 1 and preferably has a value of about 0.75) and CuIny Ga.sub.(1-y) Se2 (where y ranges between 0 and 1 and preferably has a value of about 0.90)...
01/26/1988
4707198Amorphous alloy and production method thereof
An amorphous alloy consists of iron and tellurium and has a tellurium content of from about 14 to 90 atomic%. The amorphous alloy can be utilized as an information material for optical recording and the like, and as a magnetic material and the like. The c...
11/17/1987
4626296Synthesis of new amorphous metallic spin glasses
Amorphous metallic precipitates having the formula (M1)a (M2)b wherein M1 is at least one transition metal, M2 is at least one main group metal and the integers "a" and "b" provide stoichio...
12/02/1986
4594264Method for forming gallium arsenide from thin solid films of gallium-arsenic complexes
A method for depositing GaAs on a substrate is disclosed, involving applying a thin liquid film of a gallium-arsenic complex solution to the substrate and evaporating arsenide complex. The gallium-arsenic complex is selected from the group of complexes ha...
06/10/1986
4588520Powder pressed thermoelectric materials and method of making same
New and improved compacted or powder pressed materials for thermoelectric applications include a body formed from compacted powder material including at least bismuth and tellurium and at least one highly electrically conductive phase. The materials are m...
05/13/1986
4585621Vapor-deposited film of selenium or selenium alloy for electrophotography
A vapor-deposited film of selenium or selenium alloy as a photoreceptor for electrophotography comprises selenium or a selenium alloy and phosphorus contained therein in an amount of not less the 0.5 ppm and adjusted to attain a desired contrast potential...
04/29/1986
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