|7309373||Method of making a ceramic body of densified tungsten carbide|
A method of making tungsten carbide and a method of making a densified tungsten carbide-containing ceramic body with a transverse rupture strength greater than 300,000 psi are disclosed. ...
A novel encoding system and methods for determining the location and/or identity of a particular item or component of interest is provided. In particular, the present invention utilizes a "barcode" comprising one or more sizes of semiconductor nanocrystal...
|6037614||Methods for manufacturing group IV element alloy semiconductor materials and devices that include such materials|
Snx Ge1-x alloys that are substantially free of compositional inhomogeneities and Sn segregation, and have a measurable direct band gap. Methods for making the Snx Ge1-x alloys are also disclosed....
|5681975||Single source metalloorgranic precursors to type 14-16 semiconductors|
The present invention relates to a single source metalloorganic precursor compound of the formula: (2-NR-Q-)l M-Am (I=0-4, m=0-4, l+m=2 or 4) wherein M is selected form the Group 14 elements of Germanium, Tin or Lead; A and R are independently...
|5618357||Aluminum-based solder material|
A solder material that is especially suitable for the fluxless hard soldering of aluminum-based components consists of an aluminum-based alloy that especially contains about 10 to 50 wt. % of germanium, about 1 to 12 wt. % of silicon, about 0.1 to 3 wt. %...
|5286314||Rapidly solidified aluminum-germanium base brazing alloys|
A low melting (liquidus temperature
|5230753||Photostable amorphous silicon-germanium alloys|
Alloys of hydrogenated amorphous silicon and germanium are disclosed that exhibit unexpectedly low saturated defect densities, particularly relative to the initial defect densities of the alloys, so as to render them substantially resistant to Staebler-Wr...
|5158621||Rapidly solidified aluminum-germanium base brazing alloys and method for brazing|
A low melting (liquidus temperature
|5147471||Solder for oxide layer-building metals and alloys|
A low temperature solder and method for soldering an oxide layer-building metal such as aluminum, titanium, tantalum or stainless steel. The comosition comprises tin and zinc; germanium as a wetting agent; preferably small amounts of copper and antimony; ...
|4885614||Semiconductor device with crystalline silicon-germanium-carbon alloy|
The present invention discloses a semiconductor device comprising a semiconductor layer being made of monocrystalline silicon or silicon-germanium alloy and a semiconductor layer being made of silicon-germanium-carbon alloy formed thereon, wherein the two...
|4857270||Process for manufacturing silicon-germanium alloys|
A process for manufacturing a silicon-germanium alloy comprising introducing SiH4 gas, GeCl4 gas and P-type or N-type doping gas into a reaction vessel, heating a substrate up to a temperature not lower than 750° C., and depositing ...
|4775425||P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same|
An n-type microcrystalline semiconductor alloy material including a band gap widening element; a method of fabricating p-type microcrystalline semiconductor alloy material including a band gap widening element; and electronic and photovoltaic devices inco...
|4711971||Thermoelectric Si-Ge alloy composition|
A thermoelectric alloy composition is described comprising from 5% to 95% silicon, from 95% to 5% Germanium, from 0.01% to 0.2% lead and from 0% to 0.2% tin, all percentages being atomic percentages. In a preferred composition at least 50% silicon and 50%...
|4687606||Metalloid precursor powder and method of making same|
A method of making a metalloid precursor powder is disclosed, which powder avoids impurity localization and is effective to produce an improved fine grained ceramic body. A metalloid melt is formed and rapidly solidified into particles having a particle s...
|4619696||Additive for metallurgical liquids, and method and device for the preparation thereof|
An additive for metallurgical liquids is disclosed which consists of an alloy formed by admission of one or more gas phase solutes into one or more liquid phase solvents. The solvent is a substance with semiconductor characteristics, and is selected from ...
|4492810||Optimized doped and band gap adjusted photoresponsive amorphous alloys and devices|
The production of improved photoresponsive amorphous alloys and devices, such as photovoltaic, photoreceptive devices and the like. The alloys and devices have improved wavelength threshold characteristics made possible by introducing one or more band gap...
|4442449||Binary germanium-silicon interconnect and electrode structure for integrated circuits|
An interconnect structure for use in integrated circuits comprises a germanium-silicon binary alloy. Such an alloy is deposited on the semiconductor wafer from the co-deposition of germanium and silicon using chemical vapor deposition techniques of a type...
|4419151||Crystal and germanium modification and process for its preparation|
A new crystalline modification of germanium is described, as well as a method of manufacturing it. This new crystalline germanium modification has an orthorhombic structure and graphite-like properties....
|4213781||Deposition of solid semiconductor compositions and novel semiconductor materials|
Solid layer semiconductor compositions are deposited by the simultaneous sputtering from a sputter target and electrically discharge a reacting gas preferably by application of an RF potential. Preferably, the method is used to make solid solution layers ...
|4063210||Temperature independent semiconductor resistor and method of making same|
A polycrystalline film having an electrical resistivity independent of temperature is disclosed. The film has substantially only one crystalline phase. The crystals forming that phase are of a semiconductive material supersaturated with a deep level dopan...