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Class 420/555 - GALLIUM, INDIUM, OR THALLIUM BASE


Subclass of Class 420 - Alloys or metallic compositions
Definition: Alloy, or metallic composition which contains either over 50 percent of gallium, over 50
No. of patents: 68
Last issue date: 12/01/2009


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NumberTitleIssue Date
7625523Ga-base alloy and organic function element using the same
There are provided a metal material for electrode formation, which can form an electrode provided in an organic function element without adopting vapor deposition, can easily realize an increase in size, can reduce production cost, and does not cause any disconnecti...
12/01/2009
7578966Solders with intermetallic phases, solder bumps made thereof, packages containing same, and methods of assembling packages therewith
A solder composition includes a reflow-wetting element that is an intermetallic both pre-reflow and post-reflow. The intermetallic releases the reflow-wetting element upon heating. The solder composition includes the intermetallic first phase in a bulk-solder second...
08/25/2009
7219713Heterogeneous thermal interface for cooling
The present invention is a thermal interface for coupling a heat source to a heat sink. One embodiment of the invention comprises a mesh and a liquid, e.g., a thermally conductive liquid, disposed in the mesh. The mesh and the thermally conductive liquid are adapted...
05/22/2007
7192785Water-soluble luminescent quantum dots and biomolecular conjugates thereof and related compositions and methods of use
The present invention provides a water-soluble luminescent quantum dot, a biomolecular conjugate thereof and a composition comprising such a quantum dot or conjugate. Additionally, the present invention provides a method of obtaining a luminescent quantum dot, a met...
03/20/2007
7160504Alloy type thermal fuse and fuse element thereof
The invention provides a thermal fuse and a fuse element of the low-melting fusible alloy type. The fuse element has an alloy composition in which a total of 0.01 to 7 weight parts of at least one selected from the group consisting of Au, Bi, Cu, Ni, and Pd is added...
01/09/2007
6740544Solder compositions for attaching a die to a substrate
A method for attaching a die (11) to a substrate (15) is provided. In accordance with the method, a die and a substrate are provided which are to be connected to each other across first and second surfaces. The first and second surfaces are contacted w...
05/25/2004
6617583Inventory control
A novel encoding system and methods for determining the location and/or identity of a particular item or component of interest is provided. In particular, the present invention utilizes a "barcode" comprising one or more sizes of semiconductor nanocrystal...
09/09/2003
6554923Method for providing a low temperature curable gallium alloy for multichip module substrates
A system and method for providing via-hole filling for microelectronic interconnections, is disclosed. Gallium metal is melted and mixed with a measured amount of copper and nickel, thereby creating a gallium alloy. Via holes are drilled within a substrat...
04/29/2003
6500282Gold-indium intermetallic compound, shape memory alloys formed therefrom and resulting articles
A superelastic alloy exhibiting shape memory or pseudoelastic it properties contains about 46.17 weight percent Au and about 53.83 weight percent In. Such alloys containing the superelastic Au--In2 intermetallic compound which exhibits elastici...
12/31/2002
6468808Water-soluble luminescent quantum dots and biomolecular conjugates thereof and related compositions and method of use
The present invention provides a water-soluble luminescent quantum dot, a biomolecular conjugate thereof and a composition comprising such a quantum dot or conjugate. Additionally, the present invention provides a method of obtaining a luminescent quantum...
10/22/2002
6372060Platinum solder
A solder composition for repairing jewelry having a platinum content of up to about 95% by weight contains about 90% to about 95% by weight platinum and about 5% to about 10% by weight of an alloy that provides the solder composition with a melting temper...
04/16/2002
6367683Solder braze alloy
The invention, which permits active solder braze technology to be used in a more versatile manner, relates to a solder braze alloy and to a method for joining workpieces by soldering by means of a solder braze alloy. The novel alloy is characterized in th...
04/09/2002
6319617Oxide-bondable solder
A solder composition that bonds well to oxides and other surfaces to which solder bonding is conventionally difficult is provided. The solder is particularly useful for reliable bonding and packaging of optical components that often have oxide surfaces. T...
11/20/2001
6306516Article comprising oxide-bondable solder
The invention provides an article comprising a solder that bonds well to oxides and other surfaces to which solder bonding is problematic. The solder composition contains one or more rare earth elements, which react with the oxide or other surface to prom...
10/23/2001
6273969Alloys and methods for their preparation
The present invention relates to an alloy comprising a first element A, a second element B, a third element C, and a fourth element D. In the alloy, first element A and second element B are present as a binary compound AB, and third element C and fourth e...
08/14/2001
6253988Low temperature solder
The present invention includes a low temperature solder composition having a mixture of elements including indium, tin and silver. Less than about 75% of the composition by weight is tin....
07/03/2001
6180269GaAs single crystal substrate and epitaxial wafer using the same
A GaAs single crystal substrate and an epitaxial wafer using the same suppress the generation of slips during growth of the epitaxial layer, and improve the breakdown withstanding characteristic of devices fabricated on such substrates. The GaAs single cr...
01/30/2001
6030507Process for making a crystalline solid-solution powder with low electrical resistance
A process for making a crystalline solid-solution powder which involves reacting at least two reactants in a plasma arc of a plasma chamber and blast-cooling the resultant product in a high velocity gas stream to form the powder. The first reactant is a m...
02/29/2000
6027575Metallic adhesive for forming electronic interconnects at low temperatures
The invention is a self-low-temperature curing metallic adhesive with thermal and electrical conductivity. It comprises a paste mixture of a liquid metal having a melting temperature below 30° C. and comprising: (1) 99.2-75 wt. % gallium and (2) aluminum...
02/22/2000
5628933Transparent conductors comprising zinc-indium-oxide and methods for making films
Applicant has discovered that aliovalently doped zinc-indium-oxide where In is 40-75% of the metal elements can achieve electrical conductivity comparable to wide band-gap semiconductors presently in use while exhibiting enhanced transparency in both the ...
05/13/1997
5593082Methods of bonding targets to backing plate members using solder pastes and target/backing plate assemblies bonded thereby
Methods of solder bonding sputter targets to backing plate members and solder bonded target/backing plate assemblies are available wherein a solder paste is used to bond adjoining target and backing plate surfaces. This paste comprises a low melting point...
01/14/1997
5578248Composition for use in a transparent and electrically conductive film and a method for making the film
An object of the present invention is to provide a composition for use in a formation of transparent and electrically conductive film having a low electric resistance and a high transmittance and a method for making the film mentioned above. A mixture of ...
11/26/1996
5508003Metallic material with low melting temperature
A gallium-indium-zinc-copper metallic material has been found to exhibit many of the advantageous properties of mercury, such as electrical conductivity, fluidity, and high vaporization temperature. The metallic material is formulated by combining individ...
04/16/1996
5505928Preparation of III-V semiconductor nanocrystals
Nanometer-scale crystals of III-V semiconductors are disclosed, They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridin...
04/09/1996
5474591Method of synthesizing III-V semiconductor nanocrystals
The present invention relates, in general, to a method of synthesizing nanocrystals and, in particular, to a method of synthesizing III-V semiconductor nanocrystals in solution at a low temperature and in a high yield. The method comprises the combination...
12/12/1995
5384090Fine wire for forming bump electrodes using a wire bonder
This invention relates to a connection method for a semiconductor material enabling a formation of a bump electrode with a wire bonder, keeping always a cutting position of the wire at a specified position and improving a continuous workability and stabil...
01/24/1995
5281364Liquid metal electrical contact compositions
Liquid metal electrical contact compositions are disclosed. Compositions of this invention consist of a metal mixture of first and second Periodic Table Group III metals and a lubricant. A gallium/indium metal mixture is preferred. Preferred lubricants ar...
01/25/1994
5225157Amalgam composition for room temperature bonding
An amalgam and a method of preparing an amalgam for bonding two articles together, which includes mixing a composition of a liquid metal and a metal powder to thoroughly wet the metal powder with the liquid metal, and thereafter mixing a composition with ...
07/06/1993
5198189Liquid metal matrix thermal paste
A liquid metal matrix thermal paste comprises a dispersion of non-reacting thermally conductive particles in a low melting temperature liquid metal matrix. The particles preferably are silicon, molybdenum, tungsten or other materials which do not react wi...
03/30/1993
5126168Preparation of group IIIA-VA compounds such as boron nitride, and of boron nitride films and coatings
Lewis base-borane complexes such as (CH3)2 S.BHBr2 are utilized as molecular precursors for the formation of both bulk powders, films and coatings of boron nitride. The complexes are subjected to slow heating under an ammo...
06/30/1992
5120498Solders having exceptional adhesion to glass
Heavy metal solders having exceptional ability to wet non-metals, especially glass, are produced by the incorporation of small amounts of the light reactive metals lithium, sodium, potassium, rubidium, cesium, calcium, or magnesium into the heavy metal so...
06/09/1992
5098656Alloys for electrically joining superconductors to themselves, to normal conductors, and to semi-conductors
A unique class of bonding alloys and methods for their use are provided which enable the user to electrically join superconductive materials to themselves, to normal conductive materials, or to semi-conductors. The bonding alloys have enhanced wetting pro...
03/24/1992
5053195Bonding amalgam and method of making
An amalgam and a method of preparing an amalgam for bonding two articles together, which includes mixing a composition of a liquid metal and a metal powder to thoroughly wet the metal powder with the liquid metal, and thereafter mixing a composition with ...
10/01/1991
5051316Overlay alloy or plain bearing
A Pb-based overlay alloy of a plain bearing contains 3%-20% of In and more than 0.5% to 9% of Sb, and, preferably 0.1%-5% of Ag, Cu, Ni, and/or Mn, and exhibits improved properties at a high temperature and corrosive condition of deteriorated lubricating ...
09/24/1991
5024264Method of cooling a semiconductor device with a cooling unit, using metal sherbet between the device and the cooling unit
A method of cooling a device with a cooling unit, using a metal sherbet, which is metal being in a state of a two-phase composition consisting of a liquid phase and a solid phase, as a heat conducting body put between the cooling unit and the heat generat...
06/18/1991
5012858Method of cooling a semiconductor device with a cooling unit, using metal sherbet between the device and the cooling unit
A method of cooling a semiconductor device with a cooling unit, using a metal sherbet, which is metal being in a state of a mixed phase consisting of a liquid phase and a solid phase, as a heat conducting body put between the cooling unit and the semicond...
05/07/1991
5011564Epitaxial growth
An equilibrium growth dispersion for use in liquid epitaxial growth at a predetermined growth temperature of a compound including at least two constituents. Predetermined quantities each of the constituents are placed in a container, the predetermined qua...
04/30/1991
4976529Soldering material for spectacle frame and spectacle frame in which said soldering material is used
A shape memory alloy is used for face-contacting parts (1, 3, 4, 5; 101) and lens-fixing parts (2) of a spectacle frame, and parts (12, 13; 103) connected thereto are formed of titanium, a titanium alloy, nickel, or a chromium alloy. These parts are suita...
12/11/1990
4970060Pure or mixed monocrystalline boules of lanthanum orthogallate
Monocrystalline lanthanum orthogallate compositions grown along a predetermined crystallographic direction in the form of a single crystal of a size greater than 1 cm in diameter/width and at least 10 cm in length are described. Such compositions include ...
11/13/1990
4902486Novel gallium arsenide precursor and low temperature method of preparing gallium arsenide therefrom
A novel gallium arsenide precursor has the formula R2 GaAs(SiR')2 wherein R is selected from the group consisting of alkyl substituted cycloaliphatic group and alkyl substituted aromatic group and R' is alkyl. Preferably, R is pentam...
02/20/1990
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