Class 372/50.122 - Independently addressable

Subclass of Class 372 - Coherent light generators
Definition: Subject matter, wherein the integrated devices of the
No. of patents: 27
Last issue date: 12/14/2010

Number	Title	Issue Date
7852898	Semiconductor laser device and method for manufacturing the same On a first region that is a part of one main face of a semiconductor substrate 1, a first semiconductor laser structure 10 is formed so as to have a first lower cladding layer 3, a first active layer 4 with a first quantum well structure ...	12/14/2010
7826509	Broadly tunable single-mode quantum cascade laser sources and sensors A broadly tunable single-mode infrared laser source based on semiconductor lasers. The laser source has two parts: an array of closely-spaced DFB QCLs (or other semiconductor lasers) and a controller that can switch each of the individual lasers in the array on and ...	11/02/2010
7773654	Semiconductor laser apparatus and fabrication method thereof A blue-violet semiconductor laser device has a first p-electrode formed on its upper surface and a first n-electrode formed on its lower surface. A red semiconductor laser device has a second n-electrode formed on its upper surface and a second p-electrode formed on...	08/10/2010
7616674	Semiconductor laser diode array A semiconductor laser diode array is provided. The semiconductor laser diode array includes: a lower semiconductor laser diode chip having a dual structure including a lower substrate, a first laser generating region disposed on the lower substrate, and a second las...	11/10/2009
7522649	Submount of a multi-beam laser diode module Example embodiments may provide a submount in to which a multi-beam laser diode may be flip-chip bonded and a multi-beam laser diode module including the submount. The submount may include a first submount and a second submount. The first submount may include a firs...	04/21/2009
7443895	Modular diode laser assembly An extremely versatile diode laser assembly is provided, the assembly comprised of a plurality of diode laser subassemblies mounted to a stepped cooling block. The stepped cooling block allows the fabrication of a close packed and compact assembly in which individua...	10/28/2008
7436868	Modular diode laser assembly An extremely versatile diode laser assembly is provided, the assembly comprised of a plurality of diode laser subassemblies mounted to a stepped cooling block. The stepped cooling block allows the fabrication of a close packed and compact assembly in which individua...	10/14/2008
7433380	Semiconductor laser device and method for fabricating the same In a semiconductor laser device, a plurality of light-emitting elements emitting light with different wavelengths are integrated on a substrate. Each of the light-emitting elements includes, on the substrate, an active layer and cladding layers respectively provided...	10/07/2008
7420996	Modular diode laser assembly An extremely versatile diode laser assembly is provided, the assembly comprised of a plurality of diode laser subassemblies mounted to a stepped cooling block. The stepped cooling block allows the fabrication of a close packed and compact assembly in which individua...	09/02/2008
7418019	Multi-wavelength semiconductor laser Semiconductor lasers for respective wavelengths have window regions with different lengths so as to obtain optimum FFPs for emitted light of the respective wavelengths, and thus dependence on optical output can be equal between the wavelengths, facilitating the desi...	08/26/2008
7382814	Semiconductor laser device and method of manufacturing the same A semiconductor laser diode comprises: an n-type GaAs substrate; and a first laser diode structure having a first n-type cladding layer, a first active layer including a quantum well layer, a first p-type cladding layer on the first active layer, a p-type signal lay...	06/03/2008
7315560	Apparatus, system, and method for junction isolation of arrays of surface emitting lasers An array of surface emitting laser diodes has a series electrical connection of laser diodes. Junction isolation is used to isolate laser diodes in the array. ...	01/01/2008
7310358	Semiconductor lasers Lasers, such as in laser structures, can include two or more semiconductor structures that are substantially identical or that include the same semiconductor material and have substantially the same geometry, such as in closely spaced dual-spot two-beam or quad-spot...	12/18/2007
7277462	Wide tuneable laser sources A tuneable laser assembly includes a substrate having formed thereon a plurality of tuneable lasers, waveguides, an optical coupler and an optical amplifier. The lasers have active sections and distributed Bragg reflector (DBR) tuning sections and are characterised ...	10/02/2007
7260132	Semiconductor laser apparatus A semiconductor laser apparatus includes multiple light emitting points, and a simple ridge stripe structure for each of the light emitting points. At least one of the light emitting points is disposed at a location that is 0% to 15% of the width of a substrate of t...	08/21/2007
7251407	Integrated active photonic device and photodetector An active photonic device includes a semiconductor substrate, an optically active region formed on the semiconductor substrate, the optically active region including a first electrical contact for initiating emission of photons and/or modulation of photons within th...	07/31/2007
7194013	GaN semiconductor laser device, and optical disk information system using the laser device Two or more of striped structures are formed in one chip, and a relaxation oscillation frequency of the first striped structure is greater than a relaxation oscillation frequency of the second striped structure. An RIN value at low output is improved by the first st...	03/20/2007
7149235	Multi-beam semiconductor laser device A multi-beam semiconductor laser device capable of emitting respective laser beams with uniform optical output levels and enabling easy alignment is provided. This multi-beam semiconductor laser device (40) is a GaN base multi-beam semiconductor laser device ...	12/12/2006
7133431	Semiconductor laser device and method for fabricating the same A semiconductor laser device includes a substrate which is made of, e.g., silicon and which has in its principal surface first and second recessed portions formed at a distance from each other. Disposed in the first recessed portion is a first semiconductor laser ch...	11/07/2006
5513200	Monolithic array of independently addressable diode lasers A monolithic array of two or more independently addressable, closely spaced diode lasers having low thermal, electrical, and optical crosstalk. An isolation groove is formed between the adjacent laser elements, which are defined by rib loaded waveguides c...	04/30/1996
5497391	Monolithic array of independently addressable diode lasers A monolithic array of two or more independently addressable, closely spaced diode lasers having low thermal, electrical, and optical crosstalk. An isolation region is formed between the adjacent laser elements, which are defined by rib loaded waveguides c...	03/05/1996
5216263	High density, independently addressable, surface emitting semiconductor laser-light emitting diode arrays A high density surface emitting semiconductor LED array comprises disordered regions extending through a second confinement layer, an active layer and partially extending through a first confinement layer to define light emitting areas therebetween the di...	06/01/1993
5151915	Array and method of operating a modulated solid state laser array with reduced thermal crosstalk Modulation-induced thermal crosstalk between the independently addressable lasers of a monolithic multilaser array is reduced by forming each laser with two optically coupled active regions, an amplifier region and a modulator region, biasing the amplifie...	09/29/1992
5062115	High density, independently addressable, surface emitting semiconductor laser/light emitting diode arrays A high density surface emitting semiconductor LED array comprises disordered regions extending through a contact layer, a second confinement layer, an active layer and partially extending through a first confinement layer to define optical cavities thereb...	10/29/1991
4870652	Monolithic high density arrays of independently addressable semiconductor laser sources Monolithic high density arrays of independently addressable semiconductor laser emitters or elements are able to be placed in close center-to-center proximity, e.g., on 3-10 μm centers, without experiencing any undesirable phase locking and with minimal ...	09/26/1989
4607370	Paired, separately controlled, and coupled or uncoupled stripe geometry semiconductor lasers An integrated laser structure for paired stripe semiconductor lasers is provided with separate current control of each stripe laser. With optical coupling between the lasers, one of the lasers is operated below threshold and serves the longitudinal mode s...	08/19/1986
4605942	Multiple wavelength light emitting devices Presented is a dual wavelength structure wherein two edge-emitting devices are bonded with p-regions adjacent. The bonding medium is a conductive compound that forms a common electrode between the devices. Each device is separately addressable. Efficient ...	08/12/1986

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Class 372/50.122 - Independently addressable