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| Number | Title | Issue Date |
| 8189641 | Semiconductor device The semiconductor device includes: a base; a first mount placed on the bottom of the base; a second mount placed on the top of the base; a first light-emitting element placed on the bottom of the first mount; and a second light-emitting element placed on the top of ... | 05/29/2012 |
| 8189640 | Laser light emitting device Provided is a laser light emitting device that has light sources of multiple wavelengths including an oscillation wavelength in a green region and the like, and that can be miniaturized. A metal wiring 4 is formed on a supporting substrate 5. A green L... | 05/29/2012 |
| 8126026 | Two-beam semiconductor laser device A two-beam semiconductor laser device 10 includes: a two-beam semiconductor element LDC having a first and a second semiconductor laser elements LD1 and LD2 that can be driven independently and that are formed integrally on a substrate; and a su... | 02/28/2012 |
| 8121167 | Dual wavelength laser device for optical communication A dual wavelength laser device including a cap, a header, a first laser chip and a second laser chip. The cap includes a cap body and a lens embedded on the cap body. The header forms an accommodating space with the cap. The first laser chip is arranged in the accom... | 02/21/2012 |
| 8121168 | Multibeam laser diode A multibeam laser diode capable of improving heat release characteristics in the case of junction-down assembly is provided. Contact electrodes are provided respectively for protruding streaks of a laser diode device, and pad electrodes are provided to avoid the pro... | 02/21/2012 |
| 8111729 | Multi-wavelength hybrid silicon laser array A multi-wavelength array of hybrid silicon lasers and a method of fabricating such a device. The method may include providing a silicon-on-insulator wafer; patterning waveguides in the silicon-on-insulator wafer; providing a III-V wafer comprising multiple layers; a... | 02/07/2012 |
| 8102892 | Semiconductor laser light emitting device and method for manufacturing same A semiconductor laser device 1 includes infrared and red laser elements 3, 4 provided on a substrate 2, where the infrared element 3 includes a laminate of a first lower clad layer 11, a first active layer 12 and a first upp... | 01/24/2012 |
| 8098704 | Semiconductor laser apparatus, method of manufacturing semiconductor laser apparatus, and optical pickup apparatus A monolithic red/infrared semiconductor laser device is joined to a blue-violet semiconductor laser device. The distance between a blue-violet emission point in the blue-violet semiconductor laser device and an infrared emission point in an infrared semiconductor la... | 01/17/2012 |
| 7961769 | Wavelength tunable semiconductor laser device, controller for the same, and control method for the same An object is to provide a wavelength tunable semiconductor laser device, a controller for the same and a control method for the same, which prevent wavelength drifts. The wavelength tunable semiconductor laser device includes an active region for oscillating a laser... | 06/14/2011 |
| 7936800 | Light source device and projector A light source device includes a plurality of light emission sections disposed in parallel with an interval, wherein the interval for the light emission sections near each end portion in an array of the light emission sections is narrower than the interval near a ce... | 05/03/2011 |
| 7881356 | Semiconductor laser apparatus and method of manufacturing the same Second and third p-side pad electrodes are formed on an insulating film of a blue-violet semiconductor laser device on both sides of a first p-side pad electrode. The second p-side pad electrode and the third p-side pad electrode are formed separately from each othe... | 02/01/2011 |
| 7852897 | Semiconductor laser optical integrated semiconductor device A semiconductor laser is a distributed feedback semiconductor laser in which the lasing wavelength can be changed, and includes a semiconductor substrate and a semiconductor layer portion provided on the substrate and including first and second active layers and an ... | 12/14/2010 |
| 7809042 | Two-wavelength semiconductor laser device and its fabricating method A two-wavelength semiconductor laser device includes a first semiconductor laser device including a first-conductivity type first cladding layer, a first guide layer made of AlGaAs mixed crystal, a first quantum well active layer having a barrier layer made of AlGaA... | 10/05/2010 |
| 7769069 | Integrated semiconductor laser diode module and manufacturing method of the same Improving the lifetime of an integrated semiconductor laser diode module into which a GaN semiconductor laser diode and a GaP semiconductor laser diode are integrated, and the lasing properties of the laser diodes. Prior to a joining step of an LD 1 wafer tha... | 08/03/2010 |
| 7756181 | Semiconductor laser device, optical transmission device, optical transmission system, electronic device, control device, connector, communication device, and optical transmission method and data transmission and reception method A device including a semiconductor laser device having a semiconductor laser chip, and a molded resin having a light diffusion capability. The semiconductor laser chip is covered with the molded resin. ... | 07/13/2010 |
| 7724798 | Two-beam semiconductor laser apparatus A two-beam semiconductor laser device 10 includes: a two-beam semiconductor element LDC having a first and a second semiconductor laser elements LD1 and LD2 that can be driven independently and that are formed integrally on a substrate; and a su... | 05/25/2010 |
| 7706423 | Dual-wavelength semiconductor laser device and method for fabricating the same In a dual-wavelength semiconductor laser in which a first semiconductor laser element and a second semiconductor laser element are integrated onto a substrate made of a compound semiconductor, a constituent material of an etching stopper of the first semiconductor l... | 04/27/2010 |
| 7693202 | Semiconductor laser device and method for fabricating the same In a monolithic dual wavelength laser device in which an infrared laser part 100 and a red laser part 130 are built on one n-type GaAs substrate 101, a p-type first cladding layer 105 of the infrared laser part 100 and a p-type fir... | 04/06/2010 |
| 7672351 | Semiconductor laser apparatus A projection and a raised portion are formed on an upper surface of a blue-violet semiconductor laser device. A projection and a raised portion are formed on a lower surface of a red semiconductor laser device. The height of the projection is smaller than the height... | 03/02/2010 |
| 7656923 | Dual diode converging module An improved, dual diode convergence module which focuses the light energy of at least two separate diode chip laser wavelengths of into a single beam and, thus, which derives the benefit of both wavelengths. ... | 02/02/2010 |
| 7633987 | Semiconductor laser device and manufacturing method thereof A semiconductor laser device includes a first semiconductor laser element and a second semiconductor laser element. The first semiconductor laser element has a first end face window structure that is a region including first impurities formed near an end face, and t... | 12/15/2009 |
| 7627013 | Light source module A light source module for use in display systems is provided herein. According to one exemplary embodiment, the light source module includes a plurality of coherent light sources, and a diffraction grating in optical communication with the coherent light source, the... | 12/01/2009 |
| 7623560 | Quantum photonic imagers and methods of fabrication thereof Emissive quantum photonic imagers comprised of a spatial array of digitally addressable multicolor pixels. Each pixel is a vertical stack of multiple semiconductor laser diodes, each of which can generate laser light of a different color. Within each multicolor pixe... | 11/24/2009 |
| 7613220 | Two-wavelength semiconductor laser device and method for fabricating the same A first and second semiconductor laser, which comprise buffer layers, cladding layers, quantum well active layers, and cladding layers integrated on the substrate and have a stripe geometry, are integrated on a common substrate, with the quantum well active layers i... | 11/03/2009 |
| 7606280 | Method of producing multi-wavelength semiconductor laser device A method for producing a multi-wavelength semiconductor laser device includes steps of: forming first and second nitride epitaxial layers in parallel on a substrate for growth of a nitride single crystal; separating the first and second nitride epitaxial layers from... | 10/20/2009 |
| 7606281 | Method of producing multi-wavelength semiconductor laser device A method for producing a multi-wavelength semiconductor laser device includes the steps of: forming a nitride epitaxial layer on a substrate for growth of a nitride single crystal; separating the nitride epitaxial layer from the substrate; attaching the separated ni... | 10/20/2009 |
| 7561610 | Semiconductor laser apparatus and optical apparatus A semiconductor laser apparatus comprises a first semiconductor laser device that emits a blue-violet laser beam, a second semiconductor laser device that emits a red laser beam, and a conductive package body. The first semiconductor laser device has a p-side pad el... | 07/14/2009 |
| 7551659 | Semiconductor laser apparatus A p-type pad electrode in a red semiconductor laser device and a first terminal are connected through a wire. A p-type pad electrode in an infrared semiconductor laser device and a second terminal are connected through a wire. A p-electrode in a blue-violet semicond... | 06/23/2009 |
| 7542500 | Semiconductor laser device The semiconductor laser device includes first and second light emitting portions each including a first cladding layer, an active layer and a second cladding layer, and each having a stripe structure. The stripe structure of the first light emitting portion has a se... | 06/02/2009 |
| 7539230 | Semiconductor laser device and method for fabricating the same A semiconductor laser device includes a red-light-emission portion and an infrared-light-emission portion on a single substrate. The red-light-emission portion has a structure in which an AlGaInP-based active layer is sandwiched by a first cladding layer of a first ... | 05/26/2009 |
| 7535945 | Semiconductor laser apparatus and method of manufacturing the same Second and third p-side pad electrodes are formed on an insulating film of a blue-violet semiconductor laser device on both sides of a first p-side pad electrode. The second p-side pad electrode and the third p-side pad electrode are formed separately from each othe... | 05/19/2009 |
| 7505502 | Semiconductor laser device and manufacturing method thereof In a monolithic dual-laser semiconductor laser device capable of high power output, a window structure for each of laser elements is formed through a common step, thereby improving the device reliability. The semiconductor laser device has an infrared laser element ... | 03/17/2009 |
| 7486712 | Semiconductor laser apparatus, method of manufacturing semiconductor laser apparatus, and optical pickup apparatus A monolithic red/infrared semiconductor laser device is joined to a blue-violet semiconductor laser device. The distance between a blue-violet emission point in the blue-violet semiconductor laser device and an infrared emission point in an infrared semiconductor la... | 02/03/2009 |
| 7483468 | Multiple wavelengths semiconductor laser device In one aspect of the present invention, a multiple wavelengths semiconductor laser device may include a supporting member, a first semiconductor laser element provided on a first substrate, mounted on the supporting member as face up, and configured to emit a first ... | 01/27/2009 |
| 7443895 | Modular diode laser assembly An extremely versatile diode laser assembly is provided, the assembly comprised of a plurality of diode laser subassemblies mounted to a stepped cooling block. The stepped cooling block allows the fabrication of a close packed and compact assembly in which individua... | 10/28/2008 |
| 7436868 | Modular diode laser assembly An extremely versatile diode laser assembly is provided, the assembly comprised of a plurality of diode laser subassemblies mounted to a stepped cooling block. The stepped cooling block allows the fabrication of a close packed and compact assembly in which individua... | 10/14/2008 |
| 7433380 | Semiconductor laser device and method for fabricating the same In a semiconductor laser device, a plurality of light-emitting elements emitting light with different wavelengths are integrated on a substrate. Each of the light-emitting elements includes, on the substrate, an active layer and cladding layers respectively provided... | 10/07/2008 |
| 7420996 | Modular diode laser assembly An extremely versatile diode laser assembly is provided, the assembly comprised of a plurality of diode laser subassemblies mounted to a stepped cooling block. The stepped cooling block allows the fabrication of a close packed and compact assembly in which individua... | 09/02/2008 |
| 7418019 | Multi-wavelength semiconductor laser Semiconductor lasers for respective wavelengths have window regions with different lengths so as to obtain optimum FFPs for emitted light of the respective wavelengths, and thus dependence on optical output can be equal between the wavelengths, facilitating the desi... | 08/26/2008 |
| 7408968 | Semiconductor laser device and method for fabricating the same A semiconductor laser device includes: a first light emitting device, the first light emitting device including a first first-conductive-type cladding layer, a first active layer having a first window region in the vicinity of a light emitting edge surface and a fir... | 08/05/2008 |
