Bizarre Patents
Crispy Chip Sandwich and Process of Producing a Sandwich Product
A food product comprising a multilayer cookie or snack having outer layers formed from a crispy type edible food product such as a potato chip or corn chip, etc. with an intermediate marshmallow layer being in contact with the inner surface of each crispy chip and one or more filler substances.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8149889 | Semiconductor laser device A semiconductor laser device includes a laser diode provided on a semiconductor substrate, the laser diode including a first optical waveguide having a gain waveguide, a plurality of photodiodes, a first wavelength-selective filter having periodic transmission peaks... | 04/03/2012 |
| 8149890 | Multiple distributed feedback laser devices Provided is a multiple distributed feedback laser device which includes a first distributed feedback region, a modulation region, a second distributed feedback region, and an amplification region. An active layer is disposed on the substrate of the first distributed... | 04/03/2012 |
| 8116344 | Red surface emitting laser element, image forming device, and image display apparatus A red surface emitting laser element includes a first reflector, a second reflector including a p-type semiconductor multilayer film, an active layer between the first reflector and the second reflector, and a p-type semiconductor spacer layer between the active lay... | 02/14/2012 |
| 8073033 | Optical semiconductor device and driving method thereof Objects are achieved by an optical semiconductor device comprising: a structure 61 including a substrate 50, a diffraction grating 52a, an active layer 54 and a refractive index control layer 60; and an laser element 100 | 12/06/2011 |
| 8040933 | Diffraction grating device, laser diode, and wavelength tunable filter A diffraction grating device includes a substrate with a primary surface having a plurality of grating areas that are periodically arranged with a constant period in a predetermined axis direction, the grating area including a first area and a second area, a diffrac... | 10/18/2011 |
| 8031753 | Red surface emitting laser element, image forming device, and image display apparatus A red surface emitting laser element includes a first reflector, a second reflector including a p-type semiconductor multilayer film, an active layer between the first reflector and the second reflector, and a p-type semiconductor spacer layer between the active lay... | 10/04/2011 |
| 8023547 | Vertical extended cavity surface emission laser and method for manufacturing a light emitting component of the same The present invention relates to a method of manufacturing the light emitting component of a VECSEL and the corresponding VECSEL. In the method a layer stack (2) is epitaxially grown on a semiconductor substrate (1). The layer stack comprises an active... | 09/20/2011 |
| 8009714 | Laser diode and semiconductor light-emitting device producing visible-wavelength radiation A laser diode includes a substrate having a lattice constant of GaAs or between GaAs and GaP, a first cladding layer of AlGaInP formed on the substrate, an active layer of GaInAsP formed on the first cladding layer, an etching stopper layer of GaInP formed on the ac... | 08/30/2011 |
| 8009713 | Semiconductor laser A semiconductor laser includes an active layer, a first GaAs layer formed on the active layer, the first GaAs layer including a plurality of recessed portions periodically arranged, each of the recessed portions including a bottom surface of a (100) crystal surface ... | 08/30/2011 |
| 8005125 | Lighting device equipped with coaxial line laser diodes and fabrication method thereof The present invention provides a fabrication method of coaxial line laser diodes and a coaxial lighting optical fiber which disperses and guides uniform emission of light from a coaxial line laser diode. The line coaxial laser diode can be extended at a greater leng... | 08/23/2011 |
| 7995635 | Semiconductor laser A wavelength tunable laser according to the present invention includes a first facet and a second facet opposite the first facet, a reflective region provided adjacent to the second facet, and a gain region provided between the first facet and the reflective region.... | 08/09/2011 |
| 7991033 | Vertical cavity surface emitting laser (VCSEL), VCSEL array device, optical scanning apparatus, and image forming apparatus A vertical cavity surface emitting laser (VCSEL) includes a semiconductor substrate, a lower reflecting mirror formed on the semiconductor substrate, and a mesa structure. The mesa structure includes an active layer, a selective oxidization layer that includes a cur... | 08/02/2011 |
| 7991034 | Electrically-pumped semiconductor zigzag extended cavity surface emitting lasers and superluminescent LEDs A semiconductor surface emitting optical amplifier chip utilizes a zigzag optical path within an optical amplifier chip. The zigzag optical path couples two or more gain elements. Each individual gain element has a circular aperture and includes a gain region and at... | 08/02/2011 |
| 7983318 | Optical semiconductor device An optical semiconductor device includes a semiconductor laser, a first optical waveguide, an optical coupler for branching light guided from the semiconductor laser through the first optical waveguide into two lights, two second optical waveguides, diffraction grat... | 07/19/2011 |
| 7978745 | Two-dimensional photonic crystal surface-emitting laser Two-dimensional photonic crystal surface-emitting laser comprising a two-dimensional photonic crystal, having media different in refractive index arrayed in a two-dimensional cycle, disposed in the vicinity of an active layer that emits light by the injection of car... | 07/12/2011 |
| 7974326 | Hybrid laser diode for single mode operation and method of fabricating the same Provided are a hybrid laser diode for single mode operation, and a method for manufacturing the hybrid laser diode. The hybrid laser diode includes a silicon layer, an active pattern disposed on the silicon layer, and a bonding layer disposed between the silicon lay... | 07/05/2011 |
| 7957446 | Semiconductor laser and method of making semiconductor laser A semiconductor laser includes a first optical confinement layer, a plurality of first quantum wires and buried semiconductor regions disposed on a first area, a plurality of second quantum wires and buried semiconductor regions disposed on a second area, an active ... | 06/07/2011 |
| 7940827 | Vertical-cavity, surface-emission type laser diode and fabrication process thereof A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination la... | 05/10/2011 |
| 7912106 | Enhanced surface-emitting photonic device A surface-emitting photonic device including a structure disposed therein to enhance a performance thereof. The structure includes a two dimensionally periodic second order distributed feedback device (DFB) to emit diffraction limited outcoupled laser light having a... | 03/22/2011 |
| 7873089 | Distributed feedback semiconductor laser based on reconstruction-equivalent-chirp technology and the manufacture method of the same Using sampled Bragg grating structure, the present invention proposes a distributed feedback (DFB) semiconductor laser based on reconstruction-equivalent-chirp technology. Namely, the Bragg grating in the said DFB semiconductor laser cavity is a sampled Bragg gratin... | 01/18/2011 |
| 7852896 | Vertical cavity surface emitting laser A VCSEL includes a GaAs substrate; a first semiconductor distributed Bragg reflector (DBR) disposed on the GaAs substrate and including a first part and a second part on the first part; a semiconductor mesa disposed on the first semiconductor DBR and including an ac... | 12/14/2010 |
| 7852895 | VCSEL with reduced light scattering within optical cavity A VCSEL with a structure able to reduce the scattering within the optical cavity and its manufacturing method are disclosed. The VCSEL of the present invention provides, on the semiconductor substrate, the first DBR, the active layer, the p-type spacer layer, the he... | 12/14/2010 |
| 7852894 | Semiconductor laser and semiconductor optical integrated device A semiconductor laser includes an optical waveguide formed on a semiconductor substrate and capable of generating gain by current injection, and a diffraction grating having a phase shift and provided along the optical waveguide over the overall length of the optica... | 12/14/2010 |
| 7848377 | Vertical-cavity, surface-emission type laser diode and fabrication process thereof A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination la... | 12/07/2010 |
| 7826508 | Bragg grating structure A Bragg grating has a local reflection strength which varies with position along the length of the grating so as to generate a non-uniform wavelength reflection spectrum, enabling compensation for a non-uniform gain profile of the gain section of a tunable laser. In... | 11/02/2010 |
| 7809040 | Red surface emitting laser element, image forming device, and image display apparatus A red surface emitting laser element includes a first reflector, a second reflector including a p-type semiconductor multilayer film, an active layer between the first reflector and the second reflector, and a p-type semiconductor spacer layer between the active lay... | 10/05/2010 |
| 7809041 | Surface emitting semiconductor laser In a surface emitting semiconductor laser, a first distributed Bragg reflector includes first and second semiconductor layers of a first conductive type. A second distributed Bragg reflector includes first and second portions. An active layer is provided on the firs... | 10/05/2010 |
| 7804873 | Electrically pumped surface emitting organic laser device with coupled microcavity Electrically pumped surface emitting organic laser device having a multi-layer of organic materials disposed between a highly reflective microcavity mirror and a highly reflective mirror to thereby form a coupled microcavity. More specifically, the organic laser dev... | 09/28/2010 |
| 7801195 | Electrically-pumped semiconductor zigzag extended cavity surface emitting lasers and superluminescent LEDs A semiconductor surface emitting optical amplifier chip utilizes a zigzag optical path within an optical amplifier chip. The zigzag optical path couples two or more gain elements. Each individual gain element has a circular aperture and includes a gain region and at... | 09/21/2010 |
| 7773652 | Gain-coupled distributed feedback semiconductor laser having an improved diffraction grating In a gain-coupled distributed feedback semiconductor laser, a coating of a low reflectivity is provided on a front facet from which laser light is emitted and a coating of a high reflectivity is provided on a rear facet, thus forming asymmetric coatings. The semicon... | 08/10/2010 |
| 7769067 | Vertical cavity surface emitting laser device A vertical cavity surface emitting laser device includes a first reflective mirror layer, a second reflective mirror layer, and an active layer disposed therebetween, wherein at least one of the first reflective mirror layer and the second reflective mirror layer in... | 08/03/2010 |
| 7715458 | Semiconductor optical devices, systems and methods of manufacturing the same A semiconductor optical device includes a silicon substrate and a Group III-V semiconductor gain layer. The Group III-V semiconductor gain layer is formed on the silicon substrate. The silicon substrate or the Group III-V semiconductor gain layer has a dispersion Br... | 05/11/2010 |
| 7684456 | Laser diode and semiconductor light-emitting device producing visible-wavelength radiation A laser diode includes a substrate having a lattice constant of GaAs or between GaAs and GaP, a first cladding layer of AlGaInP formed on the substrate, an active layer of GaInAsP formed on the first cladding layer, an etching stopper layer of GaInP formed on the ac... | 03/23/2010 |
| 7672350 | Method and device for using optical feedback to overcome bandwidth limitations caused by relaxation oscillation in vertical cavity surface emitting lasers (VCSELs) A semiconductor device is provided that includes an optical feedback structure that is monolithically integrated with a VCSEL device and which extends the speed of the VCSEL device beyond the speed to which it would otherwise be limited due to relaxation oscillation... | 03/02/2010 |
| 7633985 | Apparatus and methods for altering a characteristic of light-emitting device Apparatus and methods for altering one or more spectral, spatial, or temporal characteristics of a light-emitting device are disclosed. Generally, such apparatus may include a volume Bragg grating (VBG) element that receives input light generated by a light-emitting... | 12/15/2009 |
| 7633986 | Distributed feedback laser diode A distributed feedback laser diode comprises a phase-shifting portion in diffraction gratings. The magnitude of a phase shift in the phase-shifting portion is 8Λ/40 to 9Λ/40, Λ representing twice the distance between the diffraction gratings. A main mode stands o... | 12/15/2009 |
| 7633984 | Optical semiconductor device and driving method thereof Objects are achieved by an optical semiconductor device comprising: a structure 61 including a substrate 50, a diffraction grating 52a, an active layer 54 and a refractive index control layer 60; and an laser element 100 | 12/15/2009 |
| 7627011 | Distributed feedback laser diode and a method for manufacturing the same The present invention is to provide a DFB-LD with a larger coupling efficiency between the grating and the active layer. The DFB-LD of the invention provides an n-type InP substrate, an n-type InP buffer layer, an AlGaInAs layer, a intermediate layer made of a mater... | 12/01/2009 |
| 7627012 | Distributed feedback semiconductor laser including wavelength monitoring section In general, a complex-coupled distributed feedback (DFB) semiconductor laser includes a grating formed by grooves through at least a part of an active region of a laser cavity. The complex-coupled DFB laser may be configured with a wavelength monitoring section and ... | 12/01/2009 |
| 7593445 | Semiconductor optical device and optical transmission module A semiconductor optical device has a semiconductor laser portion and a modulator portion which have different mesa structures. The mesa structure of the semiconductor laser portion is a ridge waveguide structure which has air around the mesa. The mesa structure of t... | 09/22/2009 |
