Did You Know...
...that Robert Adler has the dubious distinction of being the Father of the Couch Potato? Back in 1955 Adler was employed by what was then Zenith Radio Corp., where he was charged to invent something that would allow viewers to turn down the TV volume without leaving their chairs. After a series of flops (such as a wired contraption that people tripped over), Adler hit on the idea of using sound waves. Thus the Remote Control was born...
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| Number | Title | Issue Date |
| 8170077 | Internal memory for transistor outline packages A transistor outline (TO) package includes a housing having a window and a substrate. Circuitry is coupled to the substrate within the housing. The circuitry comprises a laser diode and memory configured to store information related to the TO package. Electrical con... | 05/01/2012 |
| 8165180 | Waveguide device having delta doped active region Embodiments of the invention include a laser structure having a delta doped active region for improved carrier confinement. The laser structure includes an n-type cladding layer, an n-type waveguide layer formed adjacent the n-type cladding layer, an active region f... | 04/24/2012 |
| 8155163 | Photonic crystal laser and method of manufacturing photonic crystal laser A photonic crystal laser comprises an n-type substrate, an n-type clad layer, an active layer, a p-type clad layer, a photonic crystal layer, a p-type electrode, an n-type electrode and a package member. The n-type clad layer is formed on a first surface of the n-ty... | 04/10/2012 |
| 8121166 | Side-emitting LED light source for backlighting applications This invention relates to a side-emitting light device comprising two sub-assemblies which are optically bonded together. Each sub-assembly comprises a substrate, at least one light source disposed on the substrate, and a luminescent plate optically bonded with the ... | 02/21/2012 |
| 7961768 | Integrated semiconductor laser device and method of fabricating the same An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emi... | 06/14/2011 |
| 7876799 | Integrated semiconductor optical device A semiconductor laser (a first semiconductor optical device) and an optical modulator (a second semiconductor optical device) are integrated on the same n-type InP substrate. The semiconductor laser butt-joined to the optical modulator. Each of the semiconductor las... | 01/25/2011 |
| 7809039 | Light-emitting device and manufacturing method of the same A semiconductor light-emitting device including an insulating film, an optical resonator formed on the insulating film, and a p-electrode and an n-electrode which are disposed on the both sides of the optical resonator, respectively. The optical resonator includes a... | 10/05/2010 |
| 7787511 | Array of surface-emitting laser diodes having reduced device resistance and capable of performing high output operation and method of fabricating the surface-emitting laser diode A surface-emitting laser diode device that oscillates in a direction perpendicular to the substrate is provided. This surface-emitting laser diode device includes: an active layer; a resonator structure including a first distributed Bragg reflector and a second dist... | 08/31/2010 |
| 7751457 | Laser-diode pumped solid-state laser apparatus, optical scanning apparatus, image forming apparatus and display apparatus A laser-diode pumped solid-state laser apparatus comprises at least one laser diode producing a pumping laser light, and at least one laser light generator including a monocrystalline substance doped with a dopant element and pumped with the pumping laser light from... | 07/06/2010 |
| 7746911 | Geometric optimizations for reducing spontaneous emissions in photodiodes An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirro... | 06/29/2010 |
| 7729402 | Semiconductor laser assembly A semiconductor laser assembly includes a substrate 10 having a first mount surface 10a and a second mount surface 10b, and a submount 3 which is mounted on the first mount surface 10a and which is separate fro... | 06/01/2010 |
| 7693201 | Light-emitting semiconductor component comprising a protective diode A light-emitting semiconductor component which contains a sequence of semiconductor layers (2) with an area of p-doped semiconductor layers (4) and n-doped semiconductor layers (3) between which a first pn junction (5a, 5... | 04/06/2010 |
| 7680169 | Self-mode locked multi-section semiconductor laser diode A multi-section semiconductor laser diode is disclosed. The laser diode includes a complex-coupled DFB laser section that includes a complex-coupled grating and an active structure for controlling the intensity of oscillating laser light, to oscillate laser light in... | 03/16/2010 |
| 7672349 | Laser diode A laser diode which can be easily assembled at low material cost is provided. A first light emitting device having a laser structure on a substrate, a second light emitting device having laser structures on a substrate, and a support base are provided. The first lig... | 03/02/2010 |
| 7656922 | Multi-level integrated photonic devices A laser and electroabsorption modulator (EAM) are monolithically integrated through an etched facet process. Epitaxial layers on a wafer include a first layer for a laser structure and a second layer for an EAM structure. Strong optical coupling between the laser an... | 02/02/2010 |
| 7646799 | Edge emitting semiconductor laser comprising a plurality of monolithically integrated laser diodes An edge emitting semiconductor laser containing a plurality of monolithically integrated laser diodes (1, 2, 3). Each laser diode (1, 2, 3) contains an active zone (11, 12, 13), with the active zones (11, 12, 13) being in each case arrang... | 01/12/2010 |
| 7636378 | Semiconductor laser diode In an edge emitting laser having a window region with a ridge-waveguide structure, particularly, in a short cavity type of a laser operated with a low current, there has been a problem of its operating current being increased due to current leakage of the window por... | 12/22/2009 |
| 7620087 | Radiation-emitting semiconductor component A radiation-emitting semiconductor component comprising a semiconductor body (3) with a first active zone (1) and a second active zone (2) arranged above the first active zone, the first active zone being provided for generating a radiation havi... | 11/17/2009 |
| 7593444 | Integration of laser sources and detectors for a passive optical network Various methods and apparatuses are described in which an array of optical gain mediums capable of lasing are contained in a single integral unit. The array may contain four or more optical gain mediums capable of lasing. Each optical gain medium capable of lasing s... | 09/22/2009 |
| 7570681 | Multisectional laser Disclosed is a semiconductor laser (10) in which the substrate (11) comprises at least three independent functional sections (17, 20, 23) in the direction of light wave propagation (A), said functional sections (17, 20, 23) serving differ... | 08/04/2009 |
| 7564885 | Integrated modulator-laser structure and a method of producing same In an arrangement comprised of an electro-absorption modulator integrated with a laser source, the electro-absorption modulator includes a respective metal contact pad, wherein the metal pad is positioned over a localised semi-insulating layer island, such as a Feâ€... | 07/21/2009 |
| 7522648 | Hybrid type integrated optical device A hybrid type integrated optical device has a semiconductor laser mounted on a planar waveguide platform by flip-chip bonding. The optical device comprises a semiconductor laser and a planar waveguide platform. The semiconductor laser includes a first structure, whi... | 04/21/2009 |
| 7515624 | Semiconductor laser, semiconductor laser driver and method of driving semiconductor laser reducing feedback-induced noise by modulated optical output A semiconductor laser device has an active layer which is divided into two regions in the direction of a resonator, i.e., a light-amplifying region and a saturable absorber region. The light-amplifying region and the saturable absorber region are produced to allow t... | 04/07/2009 |
| 7483464 | Semiconductor laser apparatus and manufacturing method thereof A semiconductor laser apparatus includes a substrate, a vertical-cavity surface-emitting semiconductor laser diode (VCSEL) including a first and second mirror layers of a first and second conduction types, respectively, an active region between the first and second ... | 01/27/2009 |
| 7477669 | Semiconductor laser device and method of manufacturing the same This invention provides a semiconductor laser device and method of manufacture with a small interval between light emitting points of laser lights. A first light emitting element having a semiconductor substrate and a laser oscillation section, and a second light em... | 01/13/2009 |
| 7453915 | Optical semiconductor element and method for manufacturing the same An optical semiconductor element includes: a surface-emitting type semiconductor laser that emits laser light; and an electrostatic breakdown protection element that is provided on an optical path of the laser light emitted from the surface-emitting type semiconduct... | 11/18/2008 |
| 7436870 | Semiconductor laser device and method for manufacturing the same A semiconductor laser device includes: an n-type cladding layer, an active layer, and a p-type cladding layer, each being a III-V group compound semiconductor, supported on a substrate of n-type GaAs, a p-type band discontinuity reduction layer of a III-V group comp... | 10/14/2008 |
| 7433378 | Optical element and method for manufacturing the same An optical element includes: a substrate; a surface-emitting type semiconductor laser that is provided on the substrate and emits laser light in a direction orthogonal to a surface of the substrate; a rectification element that is provided on the substrate and conne... | 10/07/2008 |
| 7430229 | Opto-electronic device comprising an integrated laser and an integrated modulator and associated method of production The field of the invention is that of integrated optical emission devices comprising a laser emission section and a section for modulating the optical power emitted by the laser, also known as ILM devices, the acronym standing for Integrated Laser Modulator. The inv... | 09/30/2008 |
| 7420998 | Semiconductor laser device A semiconductor laser device has a front surface electrode formed by Au plating, a rear surface electrode formed by Au plating, an anti-adhesive film only on the front surface electrode and made of a material that does not react with Au, and a coating film that cove... | 09/02/2008 |
| 7418021 | Optical apertures for reducing spontaneous emissions in photodiodes An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirro... | 08/26/2008 |
| 7418019 | Multi-wavelength semiconductor laser Semiconductor lasers for respective wavelengths have window regions with different lengths so as to obtain optimum FFPs for emitted light of the respective wavelengths, and thus dependence on optical output can be equal between the wavelengths, facilitating the desi... | 08/26/2008 |
| 7413917 | Integrated optics and electronics An optoelectronic device includes a submount and a lid. The submount includes a substrate and a lens and a laser above the substrate. The lid defines a cavity having a surface coated with a reflective material to form a 45 degree mirror. The mirror reflects a light ... | 08/19/2008 |
| 7408965 | Semiconductor laser diode with emission efficiency independent of thickness of p-type cladding layer A semiconductor laser diode (LD) has been disclosed, where the emission efficiency is independent on a thickness of the p-type cladding layer. The LD provides a first semiconductor region made of group III-V compound semiconductor material, a mesa region and a buryi... | 08/05/2008 |
| 7406112 | Surface-emitting laser, method for manufacturing surface-emitting laser, device and electronic apparatus The present invention provides surface-emitting lasers that reduce a laser emission angle and are readily manufactured. Methods for manufacturing the surface-emitting lasers, devices, and electronic apparatuses are also described. The lasers are characterized in tha... | 07/29/2008 |
| 7406111 | Semiconductor laser diode and method for manufacturing the same In the semiconductor laser diode, a first material layer, an active layer, and a second material layer are sequentially formed on a substrate, a ridge portion and a first protrusion portion are formed on the second material layer in a direction perpendicular to the ... | 07/29/2008 |
| 7391799 | Mode selective semiconductor mirror for vertical cavity surface emitting lasers A vertical cavity surface emitting laser with a mode-selective mirror. A filter is formed on the top DBR stack of a VCSEL. The filter includes semiconductor layers that are etch stops for immediately superior layers. The filter is selectively etched to create a firs... | 06/24/2008 |
| 7391800 | Vertical cavity surface-emitting semiconductor laser device, optical transmission module, optical transmission device, and optical switching method In a vertical cavity surface-emitting semiconductor laser device, first and second resonance wavelengths which are different are provided while a first resonator and a second resonator are coupled optically, and a gain of an active layer at the first resonance wavel... | 06/24/2008 |
| 7386024 | Quantum cascade laser device A device includes a multiple quantum well with potential barriers and quantum wells, and an electric field element for applying an electric field thereto. The multiple quantum well includes at least two regions A and a region B disposed therebetween. The region A in... | 06/10/2008 |
| 7382512 | Resistivity phase change material Various devices and methods employing a resistive phase change material are disclosed. ... | 06/03/2008 |
