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| Number | Title | Issue Date |
| 8179944 | Adhesive protective coating with supressed reflectivity The disclosure is directed to a thin-film for use in below 300 nm laser systems that can be applied to a variety of substrate types. The thin film consists of a blocking layer of a selected material and a matching structure, the matching structure consisting of 1-7 ... | 05/15/2012 |
| 8130806 | AlGaInN-based lasers produced using etched facet technology A process for fabricating lasers capable of emitting blue light wherein a GaN wafer is etched to form laser waveguides and mirrors using a temperature of over 500° C. and an ion beam in excess of 500 V in CAIBE. ... | 03/06/2012 |
| 8102891 | Nitride semiconductor laser element A nitride semiconductor laser element includes a nitride semiconductor layer of a first conduction type, an active layer, and a nitride semiconductor layer of a second conduction type that is different from the first conduction type are laminated in that order, a ca... | 01/24/2012 |
| 8077753 | Semiconductor laser device A semiconductor laser device capable of improving the reliability of the laser device is obtained. This semiconductor laser device (1000) includes a semiconductor element layer (20) having a light emitting layer (25), a first cavity facet (1 | 12/13/2011 |
| 7978744 | Nitride based semiconductor laser device with oxynitride protective films on facets One facet of a nitride based semiconductor laser device is composed of a cleavage plane of (0001), and the other facet thereof is composed of a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar... | 07/12/2011 |
| 7970035 | Nitride semiconductor laser element and external-cavity semiconductor laser device Disclosed are a nitride semiconductor laser element including a light emitting portion made of a nitride semiconductor, and an external-cavity semiconductor laser device using it. In the nitride semiconductor laser element, a coat film made of silicon oxynitride is ... | 06/28/2011 |
| 7957445 | Spatial filters An etched-facet single lateral mode semiconductor photonic device is fabricated by depositing an anti reflective coating on the etched facet, and depositing a reflectivity modifying coating in a spatially controlled manner to modify the spatial performance of the em... | 06/07/2011 |
| 7944959 | Quantum cascade laser amplifier with an anti-reflection coating including a layer of yttrium fluoride A quantum cascade laser amplifier (12) having an active zone (20) includes a stack of raw layers of semi-conductor materials formed in an epitaxial manner on a substrate layer (16) of indium. phosphide (InP) or gallium arsenide (GaAs) bearing th... | 05/17/2011 |
| 7924897 | Semiconductor laser device A semiconductor laser device includes a chip obtained from a substrate and a semiconductor multi-layer formed on the substrate. The semiconductor multi-layer is formed from a plurality of semiconductor layers of a semiconductor material having a hexagonal structure,... | 04/12/2011 |
| 7924898 | Nitride based semiconductor laser device with oxynitride protective coatings on facets One facet and the other facet of a nitride based semiconductor laser device are respectively composed of a cleavage plane of (0001) and a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane... | 04/12/2011 |
| 7852893 | Semiconductor laser device A semiconductor laser device includes: a substrate of a first conductivity type; a laminated body of a nitride semiconductor provided on the substrate and including at least an active layer and a cladding layer, the cladding layer being of a second conductivity type... | 12/14/2010 |
| 7843982 | High power semiconductor device to output light with low-absorbtive facet window A method of avoiding device failure caused by facet heating is described. The method is particularly applicable to a semiconductor laser. In the method, a semiconductor laser facet including GaAsN is hydrogenated such that the bandgap within the facet is greater tha... | 11/30/2010 |
| 7826507 | Semiconductor laser device including highly reflective coating film A semiconductor light-emitting device includes a light generation unit generating light with an oscillation wavelength λ, a light outgoing facet from which light generated at the light generation unit emerges, a light reflecting facet at which light generated at th... | 11/02/2010 |
| 7822090 | Semiconductor device A semiconductor device includes an optical semiconductor element, a package including a base made of a metal for mounting the optical semiconductor element, and a cap for encapsulating the optical semiconductor element and a gas by covering the package and the optic... | 10/26/2010 |
| 7822091 | Inverted composite slab sandwich laser gain medium The present invention pertains to a composite slab laser gain medium with an undoped core and at least one doped gain medium section disposed on at least one side of that core. The gain medium is constructed so as to mitigate the effects of thermal and mechanical st... | 10/26/2010 |
| 7804872 | Nitride semiconductor laser element A nitride semiconductor laser element comprises; a nitride semiconductor layer that includes a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer, and that has a cavity with end faces, and a first protective film that is in ... | 09/28/2010 |
| 7796663 | Semiconductor laser device To provide a semiconductor laser device which has no ripple and can afford better FFP having a pattern near a Gaussian distribution upon operation at the high output, the semiconductor laser comprising a laminate structure in which a first conductive type semiconduc... | 09/14/2010 |
| 7796664 | Semiconductor laser A GaN laser, includes a coating film on a front end surface through which laser light is emitted. The coating film includes a first insulating film in contact with the front end surface and a second insulating film on the first insulating film. The optical film thic... | 09/14/2010 |
| 7792172 | Nitride semiconductor laser device A nitride semiconductor laser device has a multilayer structure formed by stacking a plurality of nitride semiconductor layers made of hexagonal nitride semiconductors, while the multilayer structure is provided with a waveguide structure for guiding a laser beam, t... | 09/07/2010 |
| 7764722 | Nitride semiconductor laser element A nitride semiconductor laser element has a first nitride semiconductor layer, an active layer, a second nitride semiconductor layer, and a first protective film in contact with a cavity end face of the nitride semiconductor layer, wherein the first protective film ... | 07/27/2010 |
| 7738524 | Semiconductor laser device A semiconductor laser device, which has a protective film at an end surface thereof, is adaptable to demands for higher outputs or shorter wavelengths. The semiconductor laser device according to the present invention includes a dielectric film on at least one end s... | 06/15/2010 |
| 7738525 | Semiconductor laser and method for fabricating the same A semiconductor laser (101) includes a first cladding layer (103), an active layer (105) and a second cladding layer (108). A window region (115) including fluorine, that is, an impurity element with higher electronegativity than n... | 06/15/2010 |
| 7729401 | Semiconductor laser device and fabrication method for the same The semiconductor laser device includes a cavity structure having a first clad layer, an active layer and a second clad layer formed on a substrate. The second clad layer has a stripe portion extending between the front end face from which laser light is extracted a... | 06/01/2010 |
| 7701995 | Nitride semiconductor laser element A nitride semiconductor laser element, comprises; nitride semiconductor layers in which a nitride semiconductor layer of a first conduction type, an active layer, and a nitride semiconductor layer of a second conduction type that is different from the first conducti... | 04/20/2010 |
| 7701994 | Nitride semiconductor light-emitting device and method for fabrication thereof An adhesion layer of a hexagonal crystal is laid on a facet an optical resonator of a nitride semiconductor laser bar having a nitride-based III-V group compound semiconductor layer, and a facet coat is laid on the adhesion layer. In this way, a structure in which t... | 04/20/2010 |
| 7697585 | Semiconductor laser diode A semiconductor laser diode comprising a semiconductor substrate having an active layer with a pair of cavity facets opposed to each other on both ends of active layer as well as a first dielectric film of an oxide and a second dielectric film of an oxynitride succe... | 04/13/2010 |
| 7664152 | Semiconductor laser device A semiconductor laser device has a front surface electrode formed by Au plating, a rear surface electrode formed by Au plating, an anti-adhesive film on the front surface electrode or the rear surface electrode and made of a material that does not react with Au, and... | 02/16/2010 |
| 7653107 | Semiconductor light-emitting device Semiconductor laser elements are formed on a common substrate. Au plating is formed on principal surfaces of the semiconductor laser elements. The semiconductor laser elements are mounted on a package with solder applied to the Au plating. Areas opposed to each othe... | 01/26/2010 |
| 7649922 | Semiconductor laser with reduced heat loss Disclosed is a semiconductor laser. The semiconductor laser includes a semiconductor chip that includes an active layer and emits radiation in a main radiating direction. The active layer is structured in a direction perpendicular to the main radiating direction to ... | 01/19/2010 |
| 7639720 | Two-dimensional photonic crystal surface emitting laser The two-dimensional photonic crystal surface emitting laser according to the present invention includes a semiconductor substrate, a main laser section and a reflection film. The main laser section includes a lower cladding layer, an active layer, a two-dimensional ... | 12/29/2009 |
| 7633983 | Semiconductor laser device A semiconductor laser device includes a coating film for adjustment in reflectance formed at a light-emitting portion of semiconductor, wherein the coating film has a thickness d set to satisfy R (d, n)>R (d, n+0.01) and d>λ/n, where n represents a refraction index... | 12/15/2009 |
| 7627010 | Semiconductor laser having Fabry-Perot resonator A semiconductor laser has a reflectance of the front facet coating film or the rear facet coating film dramatically that decreases at wavelengths greater than a predetermined wavelength. This characteristic causes the loss of the semiconductor laser to dramatically ... | 12/01/2009 |
| 7616673 | Semiconductor laser device A semiconductor laser device includes a semiconductor laser body including a resonator and having a front end face and a rear end face facing each other, the resonator being located between the front end face and the rear end face. The front end face emits principal... | 11/10/2009 |
| 7613219 | Semiconductor devices having self aligned semiconductor mesas and contact layers Methods of forming a semiconductor device can include forming a semiconductor structure on a substrate, the semiconductor structure having mesa sidewalls and a mesa surface opposite the substrate. A contact layer can be formed on the mesa surface wherein the contact... | 11/03/2009 |
| 7602829 | Semiconductor light emitting device and method of manufacturing same According to an aspect of the embodiment, there is provided a semiconductor light emitting device including: a gallium nitride substrate; a multilayer film of nitride semiconductors provided on the gallium nitride substrate; a first film including a first silicon ni... | 10/13/2009 |
| 7596162 | Method for forming a coating film on a facet of a semiconductor laser diode The present invention is to provide a method for producing a semiconductor laser diode (LD) with an enhanced ESD resistance. The method includes a step for forming an aluminum film on a facet of the LD and a step for forming an aluminum oxide film on the aluminum fi... | 09/29/2009 |
| 7593443 | Solid laser apparatus excited by a semiconductor laser Single mode oscillation at a wavelength of about 1064.4 nm is enabled with no use of an etalon installed in an optical resonator by providing one of two ends of a Nd:YAG element, which acts as one end of the optical resonator, with an HR coating arranged for the wav... | 09/22/2009 |
| 7590158 | Semiconductor laser having an improved window layer and method for the same A first buffer layer (GaAs), a second buffer layer (AlGaAs), and a diffusion suppressing layer consisting of GaAs or AlGaAs are stacked on a GaAs substrate. The structure has a first cladding layer thereon. When AlGaAs is used for the diffusion suppressing layer, th... | 09/15/2009 |
| 7555025 | Semiconductor laser device A semiconductor laser device includes a cavity extending in a propagation direction of a laser beam (X-direction). A front facet is on one end of the cavity through which the laser beam is emitted. A rear facet is on the other end of the cavity. Further, an adhesive... | 06/30/2009 |
| 7555026 | Semiconductor laser device A semiconductor laser device includes a cavity extending in a propagation direction of a laser beam (X-direction). A front facet is on one end of the cavity through which the laser beam is emitted. A rear facet is on the other end of the cavity. An anodic oxide film... | 06/30/2009 |
