Quotables
"If you build a better mousetrap, you will catch better mice."
George Gobel
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7782920 | Edge-emitting semiconductor laser with photonic-bandgap structure formed by intermixing A separate-confinement heterostructure, edge-emitting semiconductor laser having a wide emitter width has elongated spaced apart intermixed and disordered zones extending through and alongside the emitter parallel to the emission direction of the emitter. The interm... | 08/24/2010 |
| 7567605 | Semiconductor laser device and method of fabricating the same A semiconductor laser device capable of reducing the threshold current and improving luminous efficiency and a method of fabricating the same are obtained. This semiconductor laser device comprises a semiconductor substrate having a principal surface and a semicondu... | 07/28/2009 |
| 7342950 | Tunable laser source with integrated optical modulator A tunable laser source (10) with an integrated optical modulator (20). The laser source (10) is a widely tunable semiconductor laser that is comprised of an active region on top of a thick low bandgap, waveguide layer (22), wherein both t... | 03/11/2008 |
| 7317848 | Optical switch An optical switch in which the adverse effect of heating can be restrained is realized. An optical switch for switching a transmission path of an optical signal by a change in refractive index due to carrier injection comprises: a semiconductor substrate; an optical... | 01/08/2008 |
| 7279699 | Integrated circuit comprising a waveguide having an energy band engineered superlattice An integrated circuit may include at least one active optical device and a waveguide coupled thereto. The waveguide may include a superlattice including a plurality of stacked groups of layers. Each group of layers of the superlattice may include a plurality of stac... | 10/09/2007 |
| 7197055 | Semiconductor laser In a semiconductor laser 1, a current blocking layer 19 covers a p-type 2nd cladding layer 17 and a p-type cap layer 18 that extend in a lengthwise direction of an optical resonator, at both a light-emission end and an end oppo... | 03/27/2007 |
| 7139300 | Wide-stripe single-mode diode-laser A wide-stripe diode-laser includes a lower cladding region, a lower waveguide region, an active region, an upper waveguide region, and an upper cladding region all comprising semiconductor layers epitaxially grown on a semiconductor substrate. An elongated rectangul... | 11/21/2006 |
| 7037743 | Semiconductor device and method for producing the same A semiconductor laser device is provided that includes a first conductivity type semiconductor substrate, a first conductivity type cladding layer provided on the semiconductor substrate and an active layer provided on the cladding layer. The active layer has a supe... | 05/02/2006 |
| 7039084 | Semiconductor laser and element for optical communication A semiconductor laser with a window structure which can emit a light beam with a non-deviated outgoing angle. The semiconductor laser emits a light beam generated at an active layer via a window section. The window section includes a first semiconductor layer having... | 05/02/2006 |
| 7038233 | Semiconductor optical devices and optical modules An InGaAlAs-based buried type laser is expected to improve properties of the device, but generates defects at a re-growth interface and is difficult to realize a long-term reliability necessary for optical communication, due to inclusion of Al in an active layer. A ... | 05/02/2006 |
| 7027474 | Semiconductor laser device and manufacturing method thereof The laser semiconductor device includes a semiconductor substrate, a first clad layer of a first conductivity type, an active layer, a second clad layer of a second conductivity type, and a protective layer of the second conductivity type, and peak wavelength of pho... | 04/11/2006 |
| 7016387 | Semiconductor laser element produced by aligning a photomask to pattern an electrode portion superposed on inner portions of upper surfaces of window regions at opposite end faces A semiconductor laser element that has window regions at its opposite end faces and an electrode portion superposed on an inner portion of the upper surface thereof to include covering an inner portion of the upper surfaces of the window regions without covering the... | 03/21/2006 |
| 6671301 | Semiconductor device and method for producing the same A semiconductor laser device including: a semiconductor substrate of a first conductivity type; a cladding layer of the first conductivity type provided on the semiconductor substrate; an active layer provided on the cladding layer of the first conductivi... | 12/30/2003 |
| 5469457 | Semiconductor laser with COD preventing disordered regions A semiconductor laser includes: a first conductivity type semiconductor substrate; a first conductivity type lower cladding layer disposed on the substrate; a quantum well structure disposed on the lower cladding layer; a second conductivity type upper cl... | 11/21/1995 |
| 5238868 | Bandgap tuning of semiconductor quantum well structures A method of selectively tuning the bandedge of a semi-conductor heterostructure includes forming a disordered region which is spatially separated from a quantum well active region, and subsequently annealing the heterostructure so that vacancies/defects i... | 08/24/1993 |
| 5166945 | Visible light surface emitting laser device A surface emitting laser device for producing visible light includes a GaAs substrate having a (100) oriented main surface; a double heterojunction structure disposed on the main surface and including a first conductivity type AlGaInP first cladding layer... | 11/24/1992 |
| 5145792 | Method of fabricating a semiconductor optical device A semiconductor optical device having a quantum well structure which can easily integrate plural optical devices of band gaps which are different from each other, and yet can achieve a high coupling coefficient by means of disordering the quantum well str... | 09/08/1992 |
| 5140605 | Thermally stabilized diode laser structure A diode laser structure is thermally stabilized by passing current through heater strips along the sides of the diode laser cavity. The thermally stabilized diode laser structure comprises a first confinement layer and a substrate of one conductivity type... | 08/18/1992 |
| 5138626 | Ridge-waveguide buried-heterostructure laser and method of fabrication A laser structure achieves high reliability, good bandwidth and performance characteristics and a fabrication procedure that is compatible with other IC devices by providing an active lasing region below an optical mode confining ridge. The active region ... | 08/11/1992 |
| 5107514 | Semiconductor optical element A semiconductor optical element includes a quantum well structure having a crystalline well layer of (Alx Ga1-x)1-z Inz Py As1-y (Oࣘx | 04/21/1992 |
| 4845725 | Window laser with high power reduced divergence output A window laser having at least one window region with a transparent waveguide layer optically coupled to an active region generating lightwaves. The waveguide layer is characterized by a broader guided transverse mode for the lightwaves than the active re... | 07/04/1989 |
| 4809289 | Semiconductor laser device A semiconductor laser device comprises a semi-insulating substrate and at least two kinds of the thin compound semiconductor layers having different width of band gap, which are alternately superimposed on the seim-insulating substrate to form a multiquan... | 02/28/1989 |
| 4786918 | Incoherent, optically uncoupled laser arrays for electro-optic line modulators and line printers An incoherent, optically uncoupled laser array for an electro-optic line modulator or a line printer or the like and comprising a plurality of spatial laser emitters characterized by having high power density and a uniform far field emission pattern. Stru... | 11/22/1988 |
| 4752933 | Semiconductor laser A semiconductor laser which has a super lattice layer between a substrate and a light confinement layer, and in which a portion of the super lattice layer other than a portion corresponding to the radiation region of an active layer is disordered to block... | 06/21/1988 |
| 4727556 | Semiconductor lasers fabricated from impurity induced disordering A semiconductor laser having a single lasing element or multiple lasing elements is provided with a structural feature in at least one cladding region of the laser that permits partial compositional disordering upon the application of impurity induced dis... | 02/23/1988 |
| 4671830 | Method of controlling the modeling of the well energy band profile by interdiffusion The method of controlling the modeling of the well energy band profile by interdiffusion comprises at least one thin disordering component layer contiguous with a surface of the quantum well layer and including a high content of a disordering component th... | 06/09/1987 |
| 4639275 | Forming disordered layer by controlled diffusion in heterojunction III-V semiconductor A method is disclosed for converting a multilayer semiconductor structure, that includes active semiconductor regions interposed between semiconductor barrier layers, into a disordered alloy by introduction of a specified disordering element into the mult... | 01/27/1987 |
| 4594603 | Semiconductor device with disordered active region A semiconductor device is disclosed, which includes a disordered alloy converted from at least a first active semiconductor region and a second semiconductor barrier layer that have been disordered by introduction of a disordering element selected from th... | 06/10/1986 |
| 4511408 | Semiconductor device fabrication with disordering elements introduced into active region Silicon or krypton is used as a disordering element to selectively disorder layers in a heterojunction III-V semiconductor.... | 04/16/1985 |
| 4378255 | Method for producing integrated semiconductor light emitter A multilayer, III-V semiconductive structure can be disordered and shifted up in energy gap into a single crystalline form by a Zinc diffusion. More specifically, all or selected portions of a multilayer of either gallium arsenide/aluminum arsenide or gal... | 03/29/1983 |
