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| Number | Title | Issue Date |
| 7995634 | Nitride semiconductor laser element A nitride semiconductor laser element exhibits high-speed responsiveness by largely reducing the capacitance of the nitride semiconductor laser element. The nitride semiconductor laser element includes an n-type semiconductor layer, an active layer and a p-type semi... | 08/09/2011 |
| 7813403 | Vertical cavity surface emitting laser diode and a method for producing the same A vertical cavity surface emitting laser diode (VCSEL) with a new structure is disclosed. The VCSEL of the invention provides the active layer, the first spacer layer, the tunnel junction, the second spacer layer burying the tunnel junction. Only the first spacer la... | 10/12/2010 |
| 7620086 | Semiconductor laser and electronic device In one embodiment of the invention, in a semiconductor laser in which a first conductivity type lower cladding layer, an active layer that includes a quantum well layer, and a second conductivity type upper cladding layer are formed in this order on a semiconductor ... | 11/17/2009 |
| 7432118 | Vertical cavity surface emitting laser having a gain guide aperture interior to an oxide confinement layer A VCSEL with current confinement achieved by an oxide insulating region and by an ion implant region. An annular shaped oxide layer is formed, and a gain guide ion implant is formed. The ion implant gain guide includes a central region having high conductivity. The ... | 10/07/2008 |
| 7426228 | Surface emitting type optical semiconductor device It makes possible to inject a current into the current confinement region substantially uniformly. A surface emitting type optical semiconductor device includes a semiconductor active layer provided above a substrate; a first and second reflecting mirror layers sand... | 09/16/2008 |
| 7418014 | Surface-emitting type semiconductor laser, and method for manufacturing the same, optical switch, and optical branching ratio variable element A surface-emitting type semiconductor laser includes a substrate, a first distributed Bragg reflection type mirror formed above the substrate, an active layer formed above the first mirror, a second distributed Bragg reflection type mirror formed above the active la... | 08/26/2008 |
| 7376163 | Method for producing a waveguide structure in a surface-emitting semiconductor laser and surface-emitting semiconductor laser Methods for producing surface-emitting semi-conductor lasers with tunable waveguiding are disclosed. The laser comprises an active zone containing a pn-transition, surrounded by a first n-doped semiconductor layer and at least one p-doped semiconductor layer. In add... | 05/20/2008 |
| 7359419 | Vertical cavity surface emitting laser optimized for thermal sensitivity A vertical cavity surface emitting laser (VCSEL) optimized for use in self mixing applications. The VCSEL generally includes a bottom distributed Bragg reflector (DBR) mirror formed on a substrate. An active region is formed on the bottom mirror. A top DBR mirror is... | 04/15/2008 |
| 7323728 | Semiconductor device Disclosed is a semiconductor device including an n+-type semiconductor layer formed on a substrate, a first n-type semiconductor layer formed on the n+-type semiconductor layer, a p-type semiconductor layer formed on the first n-type semiconduc... | 01/29/2008 |
| 7257141 | Phase array oxide-confined VCSELs A phase array of oxide confined VCSELs and a method for forming the phase array of oxide confined VCSELs is described. VCSELs in the array are designed to be simultaneously addressed such that the output of multiple VCSELs can be used to increase the light intensity... | 08/14/2007 |
| 7233610 | Nitride based semiconductor laser diode device with a bar mask A nitride based semiconductor laser diode device comprising a selective growth mask with a grating structure is proposed. The island-like stacked epitaxial layers including the P-type cladding layer is formed from the selective growth mask upon the active layer of t... | 06/19/2007 |
| 7221691 | Versatile method and system for single mode VCSELs A system and method for providing a single mode VCSEL (vertical cavity surface emitting laser). A lower mirror is formed on a substrate. An active region including one or more quantum wells is formed over the lower mirror. The upper mirror formed over the active reg... | 05/22/2007 |
| 7197055 | Semiconductor laser In a semiconductor laser 1, a current blocking layer 19 covers a p-type 2nd cladding layer 17 and a p-type cap layer 18 that extend in a lengthwise direction of an optical resonator, at both a light-emission end and an end oppo... | 03/27/2007 |
| 7180927 | Semiconductor laser diode and semiconductor laser diode assembly containing the same Provided is a semiconductor laser diode. The semiconductor laser diode includes a first material layer, an active layer, and a second material layer, characterized in that the semiconductor laser diode includes: a ridge waveguide, which is formed in a ridge shape ov... | 02/20/2007 |
| 7177339 | Semiconductor laser A semiconductor laser has implantation regions that are effective as mode-selective regions in addition to current diaphragms in the edge region of a mesa. As a result, the inner opening of the current diaphragms can be chosen to be larger than in the prior art. Thi... | 02/13/2007 |
| 7127129 | Method and apparatus for phase shifting an optical beam in an optical device An apparatus and method for high speed phase modulation of optical beam with reduced optical loss. In one embodiment, an apparatus includes a first region of an optical waveguide disposed in semiconductor material. The first region has a first conductivity type. The... | 10/24/2006 |
| 7123638 | Tunnel-junction structure incorporating N-type layer comprising nitrogen and a group VI dopant A tunnel junction structure comprises an n-type tunnel junction layer of a first semiconductor material, a p-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. The first semiconductor material incl... | 10/17/2006 |
| 7095771 | Implant damaged oxide insulating region in vertical cavity surface emitting laser Optical transmitters are disclosed, one example of which includes a vertical cavity surface emitting laser that includes a substrate upon which a lower mirror is disposed. In this example, a spacer is disposed between the lower mirror and an active region. Another s... | 08/22/2006 |
| 7088755 | Nitride-base semiconductor laser device A nitride-based semiconductor laser device capable of attaining stabilization of a laser beam and inhibiting a threshold current and an operating current from increase is provided. This nitride-based semiconductor laser device comprises a substrate consisting of eit... | 08/08/2006 |
| 7085298 | Tunnel junction utilizing GaPSb, AlGaPSb A vertical cavity surface emitting laser (VCSEL) includes a substrate; a first mirror stack over the substrate; an active region having a plurality of quantum wells over the first mirror stack; a tunnel junction over the active region, a p-layer of the tunnel juncti... | 08/01/2006 |
| 7046708 | Semiconductor laser device including cladding layer having stripe portion different in conductivity type from adjacent portions A semiconductor laser device has a pair of cladding layers with an active layer interposed therebetween. At least one of the cladding layers is of the same composition through the entire region of the cladding layer, excluding a dopant in the cladding layer, and has... | 05/16/2006 |
| 7039084 | Semiconductor laser and element for optical communication A semiconductor laser with a window structure which can emit a light beam with a non-deviated outgoing angle. The semiconductor laser emits a light beam generated at an active layer via a window section. The window section includes a first semiconductor layer having... | 05/02/2006 |
| 7037743 | Semiconductor device and method for producing the same A semiconductor laser device is provided that includes a first conductivity type semiconductor substrate, a first conductivity type cladding layer provided on the semiconductor substrate and an active layer provided on the cladding layer. The active layer has a supe... | 05/02/2006 |
| 7003013 | Distributed feedback semiconductor laser device A DFB semiconductor laser device including an n-type semiconductor substrate and a layer structure, overlying the semiconductor substrate, including an active layer, a compound semiconductor layer constituting a diffraction grating and overlying the active layer, an... | 02/21/2006 |
| 6993056 | Hetero laser and light-emitting source of polarized radiation A device and method for hetero laser and light-emission of high polarization radiation. Previous light emitting devices suffered from very low degree of the radiation polarization. A hetero laser and light emitting device with a semiconductor layer sandwiched betwee... | 01/31/2006 |
| 5500868 | Vertical-to-surface transmission electro-photonic device with ion implanted current control regions The invention provides a vertical-to-surface transmission electro-photonic semiconductor device with a mesa structure of light reflective multiple layers in which the device includes a high resistive region for a carrier confinement. The high resistive re... | 03/19/1996 |
| 5499260 | Semiconductor laser and a method for fabricating the same An n-ZnMgSSe lower cladding layer, an n-ZnSSe light guiding layer, an undopad CdZnSe active layer, a p-ZnSSe light guiding layer, a p-ZnMgSSe upper cladding layer, and a p-ZnSe cap layer are successively formed on an n-GaAs substrate. Then, grooves and a ... | 03/12/1996 |
| 5345462 | Semiconductor surface emitting laser having enhanced polarization control and transverse mode selectivity Applicant has demonstrated that by appropriately shaping the laser gain region one can control the polarization direction of semiconductor vertical cavity lasers and enhance their transverse mode selectivity. Specifically, configuring the transverse cross... | 09/06/1994 |
| 5275969 | Semiconductor laser A method for diffusing a P type impurity into a semiconductor includes the steps of selectively implanting ions of a first P type impurity into a semiconductor substrate and thermally diffusing a second P type impurity into the semiconductor substrate con... | 01/04/1994 |
| 5219785 | Method of forming current barriers in semiconductor lasers A method using implantation to form a semiconductor laser or laser array with current blocking implants. A semiconductor material laser structure including layers of a first conductivity type, an active region and layers of a second conductivity type is f... | 06/15/1993 |
| 5193098 | Method of forming current barriers in semiconductor lasers A method using implantation to form a semiconductor laser or laser array with current blocking implants. A semiconductor material laser structure including layers of a first conductivity type, an active region and layers of a second conductivity type is f... | 03/09/1993 |
| 5151914 | Process to manufacture laser structures with lateral confinement at very low threshold current and relevant laser devices so obtained A process for producing a multilayer device which emits coherent luminous radiation (laser radiation) upon the application of electric power. The device consists of a substrate, a first epitaxial layer, an active layer having a composition which emits lum... | 09/29/1992 |
| 5151912 | Semiconductor laser A semiconductor laser comprises a semiconductor substrate having first and second surfaces opposing to each other, first and second cladding layers formed on the first surface of the substrate, an active layer of a superlattice structure sandwiched betwee... | 09/29/1992 |
| 5145792 | Method of fabricating a semiconductor optical device A semiconductor optical device having a quantum well structure which can easily integrate plural optical devices of band gaps which are different from each other, and yet can achieve a high coupling coefficient by means of disordering the quantum well str... | 09/08/1992 |
| 5138626 | Ridge-waveguide buried-heterostructure laser and method of fabrication A laser structure achieves high reliability, good bandwidth and performance characteristics and a fabrication procedure that is compatible with other IC devices by providing an active lasing region below an optical mode confining ridge. The active region ... | 08/11/1992 |
| 5115442 | Top-emitting surface emitting laser structures Top surface emitting, vertical cavity, surface emitting lasers depend upon emission through apertured top surface electrodes. Biasing current, accordingly peripheral to the laser as introduced, follows a path which comes to confluence within the active ga... | 05/19/1992 |
| 5048038 | Ion-implanted planar-buried-heterostructure diode laser A Planar-Buried-Heterostructure, Graded-Index, Separate-Confinement-Heterostructure semiconductor diode laser 10 includes a single quantum well or multi-quantum well active stripe 12 disposed between a p-type compositionally graded Group III-V cladding la... | 09/10/1991 |
| 5045498 | Method of fabricating an atomic element doped semiconductor injection laser using ion implantation and epitaxial growth on the implanted surface A semiconductor laser diode includes a first buffer layer, a second buffer layer and an active layer sandwiched between the two buffer layers. The active layer contains dopant ions where the dopant ions are such that energy transfer between the unimplante... | 09/03/1991 |
| 4752934 | Multi quantum well laser with parallel injection A semiconductor laser having such a structure that a laser structure including a laser active region of multi quantum well structure, cladding layers and a cap layer is formed on a substrate, is disclosed in which both end regions of the laser active regi... | 06/21/1988 |
| 4742013 | Process for the production of a semiconductor laser with tape geometry and laser obtained by this process Process is disclosed for the production of a semiconductor laser with tape geometry and laser obtained by this process. After producing a double heterostructure on a substrate, a p-dopant is implanted in these layers, so that the two layers are made insulating... | 05/03/1988 |
