Quotables
"I think there is a world market for maybe five computers."
Thomas Watson, chairman of IBM ; 1943
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8098703 | Laser diode and method of manufacturing the same A laser diode allowed to stabilize the polarization direction of laser light in one direction is provided. The laser diode includes a laminate configuration including a lower multilayer reflecting mirror, an active layer and an upper multilayer reflecting mirror in ... | 01/17/2012 |
| 8085827 | Vertical cavity surface emitting laser and method of manufacturing the same A Vertical Cavity Surface Emitting Laser capable of decreasing the lowering of the yield due to displacement and separation of a pedestal without enormous increase of the threshold value and more difficult manufacturing process is provided. A base of a mesa spreads ... | 12/27/2011 |
| 8073032 | Surface emitting laser and manufacturing method therefor Provided is a surface emitting laser or the like capable of suppressing horizontal misalignment between the surface relief structure and the current confining structure to make higher the precision of the alignment, to thereby obtain single transverse mode character... | 12/06/2011 |
| 7940825 | Surface-emission laser diode and surface-emission laser array, optical interconnection system, optical communication system, electrophotographic system, and optical disk system A surface-emission laser diode includes an active layer, a pair of cavity spacer layers formed at both sides of the active layer, a current confinement structure defining a current injection region into the active layer, and a pair of distributed Bragg reflectors op... | 05/10/2011 |
| 7920615 | Surface-emitting laser diode and method of manufacturing the same A surface-emitting laser diode capable of being manufactured easily at low cost, and capable of stabilizing the polarization direction of laser light in one direction and achieving higher output is provided. A light emission section 20 in which a lower first ... | 04/05/2011 |
| 7881354 | VCSEL, manufacturing method thereof, optical device, light irradiation device, data processing device, light sending device, optical spatial transmission device, and optical transmission system A VCSEL includes a first conductivity-type first semiconductor mirror layer on a substrate, an active region thereon, a second conductivity-type second semiconductor mirror layer thereon, and a current confining layer in proximity to the active region. A mesa struct... | 02/01/2011 |
| 7826506 | Vertical cavity surface emitting laser having multiple top-side contacts A VCSEL with undoped mirrors. An essentially undoped bottom DBR mirror is formed on a substrate. A periodically doped first conduction layer region is formed on the bottom DBR mirror. The first conduction layer region is heavily doped at a location where the optical... | 11/02/2010 |
| 7796662 | Vertical cavity surface emitting laser and image forming apparatus using the vertical cavity surface emitting laser Provided is a laser having a multilayer reflector that suppresses the multimode operation. A vertical cavity surface emitting laser includes a first mirror, a cavity having an active layer, and a second mirror that are laminated. The second mirror is a multilayer re... | 09/14/2010 |
| 7760785 | Group-III nitride semiconductor device A method of forming a partially etched nitride-based compound semiconductor crystal layer includes the following steps. A non-crystal layer of a nitride-based compound semiconductor is formed. At least a part of the non-crystal layer is then etched to form a partial... | 07/20/2010 |
| 7720125 | Surface light emitting laser element, surface light emitting laser array provided with it, electro-photographic system and optical communication system A surface-emission laser device comprises an active layer, cavity spacer layers provided at both sides of the active layer, reflection layers provided at respective sides of the cavity spacer layers, the reflection layers reflecting an oscillation light oscillated i... | 05/18/2010 |
| 7596161 | Laterally oxidized vertical cavity surface emitting lasers Highly compact vertical cavity surface emitting laser structures formed by a lateral oxidation process are provided. Specifically, well-controlled oxidized regions bound and define the aperture of a laser structure in a current controlling oxidation layer, wherein t... | 09/29/2009 |
| 7542499 | Surface-emission laser diode and surface-emission laser array, optical interconnection system, optical communication system, electrophotographic system, and optical disk system A surface-emission laser diode includes an active layer, a pair of cavity spacer layers formed at both sides of the active layer, a current confinement structure defining a current injection region into the active layer, and a pair of distributed Bragg reflectors op... | 06/02/2009 |
| 7515623 | Surface emitting semiconductor laser, its manufacturing method, and manufacturing method of electron device A surface emitting semiconductor laser which can perform laser oscillation in a single peak beam like that in a single lateral mode and a manufacturing method which can easily manufacture such a laser at a high yield are provided. When a surface emitting semiconduct... | 04/07/2009 |
| 7443899 | Surface emitting semiconductor laser diode and manufacturing method thereof A surface emitting semiconductor laser diode includes a substrate, a first reflective layer formed over the substrate, an active layer formed over the first reflective layer, a second reflective layer formed over the active layer, a first conductive layer having an ... | 10/28/2008 |
| 7444083 | Optical fiber transmission system with a plural emitting point transmitter In an optical signal transmission system which can perform high-speed optical transmission not lower than 1 Gbps, VCSEL has light-emission points. A core diameter of an optical fiber GI-POF is set to not lower than 200 μm, and the light-emission points of VCSEL are... | 10/28/2008 |
| 7426228 | Surface emitting type optical semiconductor device It makes possible to inject a current into the current confinement region substantially uniformly. A surface emitting type optical semiconductor device includes a semiconductor active layer provided above a substrate; a first and second reflecting mirror layers sand... | 09/16/2008 |
| 7418014 | Surface-emitting type semiconductor laser, and method for manufacturing the same, optical switch, and optical branching ratio variable element A surface-emitting type semiconductor laser includes a substrate, a first distributed Bragg reflection type mirror formed above the substrate, an active layer formed above the first mirror, a second distributed Bragg reflection type mirror formed above the active la... | 08/26/2008 |
| 7415055 | Reliability-enhancing layers for vertical cavity surface emitting lasers Vertical cavity surface emitting lasers (VCSELs) and methods of making the same are described. The VCSELs include reliability-enhancing layers that perform specific functions at one or more critical locations within a VCSEL structure to reduce or prevent defect form... | 08/19/2008 |
| 7394104 | Semiconductor optical device having current-confined structure Provided is a semiconductor optical device having a current-confined structure. The device includes a first semiconductor layer of a first conductivity type which is formed on a semiconductor substrate and includes one or more material layers, a second semiconductor... | 07/01/2008 |
| 7369588 | Broad-band optical semiconductor device and a method for manufacturing the same Disclosed is an optical semiconductor device that provides an optical gain or optical loss depending on application of electric current. The optical semiconductor device comprises: a lower clad layer; an active layer disposed on the lower clad layer, the active laye... | 05/06/2008 |
| 7359419 | Vertical cavity surface emitting laser optimized for thermal sensitivity A vertical cavity surface emitting laser (VCSEL) optimized for use in self mixing applications. The VCSEL generally includes a bottom distributed Bragg reflector (DBR) mirror formed on a substrate. An active region is formed on the bottom mirror. A top DBR mirror is... | 04/15/2008 |
| 7346089 | Surface-emitting laser diode with tunnel junction and fabrication method thereof A surface emitting semiconductor laser diode of a tunnel junction type includes a semiconductor substrate, a first reflector, a second reflector, an active region disposed in series between the first and second reflectors, and a tunnel junction region disposed in se... | 03/18/2008 |
| 7339967 | Semiconductor device, semiconductor laser device, manufacturing method for semiconductor device, manufacturing method for semiconductor laser device, optical disk device and optical transmission system A semiconductor device has a main structure member laminated on a first conductivity-type semiconductor substrate. On the main structure, there is formed a first substructure member, the entirety of which, including lowermost layer, is second conductivity-type. On t... | 03/04/2008 |
| 7336688 | Surface emitting semiconductor laser and method of manufacturing the same A surface emitting semiconductor laser includes a substrate, a first semiconductor multiple layer reflecting mirror formed on the substrate, the reflecting mirror having a semiconductor layer including at least Ga, In and P, an active region formed on the first semi... | 02/26/2008 |
| 7335920 | LED with current confinement structure and surface roughening An LED having a p-type layer of material with an associated p-contact, an n-type layer of material with an associated n-contact and an active region between the p-type layer and the n-type layer, includes a confinement structure that is formed within one of the p-ty... | 02/26/2008 |
| 7332744 | Semiconductor light-emitting device and method of manufacturing the same A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs or the like corresponding to a current injection region in an active l... | 02/19/2008 |
| 7330494 | Conductive element with lateral oxidation barrier A conductive element with a lateral oxidation barrier is provided for the control of lateral oxidation processes in semiconductor devices such as lasers, vertical cavity surface emitting lasers and light emitting diodes. The oxidation barrier is formed through modif... | 02/12/2008 |
| 7330495 | Vertical cavity surface emitting laser diode having a high reflective distributed Bragg reflector The present invention is to provide a vertical cavity surface emitting laser diode (VCSEL) that has a functional distributed Bragg reflector (DBR) comprised of less number of pairs of reflective layers. The VCSEL of the invention include a lower DBR, an upper DBR an... | 02/12/2008 |
| 7277461 | Dielectric VCSEL gain guide A vertical cavity surface emitting laser having a dielectric gain guide. The gain guide may provide current confinement, device isolation and possibly optical confinement. The first mirror and an active region may be grown. A pattern may be placed on or near the act... | 10/02/2007 |
| 7257141 | Phase array oxide-confined VCSELs A phase array of oxide confined VCSELs and a method for forming the phase array of oxide confined VCSELs is described. VCSELs in the array are designed to be simultaneously addressed such that the output of multiple VCSELs can be used to increase the light intensity... | 08/14/2007 |
| 7244629 | Vertical cavity surface emitting laser diode and method for manufacturing the same In a vertical cavity surface emitting laser diode manufactured on a non-off-angle substrate with a (100)-oriented plane or the like, anisotropic stress is applied to a central portion of an active layer by forming a asymmetrical oxidation structure in an Al high con... | 07/17/2007 |
| 7221691 | Versatile method and system for single mode VCSELs A system and method for providing a single mode VCSEL (vertical cavity surface emitting laser). A lower mirror is formed on a substrate. An active region including one or more quantum wells is formed over the lower mirror. The upper mirror formed over the active reg... | 05/22/2007 |
| 7215693 | Surface emitting semiconductor laser device A surface emitting semiconductor laser device including a substrate, a bottom DBR, and a mesa post having a layer structure, the layer structure including a top DBR including a plurality of pairs, each of said pairs including an Al-containing high-reflectivity layer... | 05/08/2007 |
| 7180100 | Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorpor... | 02/20/2007 |
| 7169629 | VCSEL and the fabrication method of the same A fabrication method of VCSEL is used to form a contact electrode on a VCSEL in a resonance cavity. A heavily doped layer is formed in a resonance cavity where the light intensity is the weakest. A Bragg reflector is etched while the etching stop point being above t... | 01/30/2007 |
| 7160749 | Method and structure for eliminating polarization instability in laterally—oxidized VCSELs The polarization instability inherent in laterally-oxidized VCSELs may be mitigated by employing an appropriately-shaped device aperture, a misoriented substrate, one or more cavities or employing the shaped device aperture together with a misoriented substrate and/... | 01/09/2007 |
| 7157298 | Surface emitting semiconductor laser, and method and apparatus for fabricating the same A method of fabricating a surface emitting semiconductor laser includes the following steps. A first laminate of semiconductor layers and a second laminate of semiconductor layers are formed on a substrate. The first laminate includes a first reflection mirror layer... | 01/02/2007 |
| 7151061 | Method of selective post-growth tuning of an optical bandgap of a semi-conductor heterostructure and products produced thereof A method of controlling the degree of IFVEI for post-growth tuning of an optical bandgap of a semiconductor heterostructure. The resultant layer structure may contain a semi-conductor heterostructure with one or more regions with selectively modified bandgap. Accord... | 12/19/2006 |
| 7141441 | Surface emitting semiconductor laser and manufacturing method thereof There is provided a surface emitting semiconductor laser satisfying a requirement of making a transverse mode stable and having characteristics of high output power, low resistance, high efficiency, and high speed response and a method for manufacturing the surface ... | 11/28/2006 |
| 7132351 | Method of fabricating a compound semiconductor layer A method of fabricating a compound semiconductor layer has steps of forming a first layer made of an oxidizable material on a substrate, forming a second layer made of a compound semiconductor on the first layer, oxidizing the first layer made of the oxidizable mate... | 11/07/2006 |
