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Method and apparatus for making a drink hop along a bar or counter
A method for generating a drink which appears to hop from a remote spot on the bar or counter and take one or more leaps, before landing in a patron's glass.
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| Number | Title | Issue Date |
| 8121165 | MQW laser structure comprising plural MQW regions Multi-quantum well laser structures are provided comprising active and/or passive MQW regions. Each of the MQW regions comprises a plurality of quantum wells and intervening barrier layers. Adjacent MQW regions are separated by a spacer layer that is thicker than th... | 02/21/2012 |
| 8098701 | Quantum cascade laser element A DFB quantum cascade laser element that can reliably CW-oscillate a single-mode light even at room temperature or a temperature in proximity thereof is provided. In a quantum cascade laser element 1, a top-grating approach for which a diffraction grating ... | 01/17/2012 |
| 8050305 | Semiconductor device A semiconductor device having high reliability, a long lifetime and superior light emitting characteristics by applying a novel material to a p-type cladding layer is provided. A semiconductor device includes a p-type semiconductor layer on an InP substrate, in whic... | 11/01/2011 |
| 8014430 | Quantum cascade laser A quantum cascade laser utilizing non-resonant extraction design having a multilayered semiconductor with a single type of carrier; at least two final levels (1 and 1′) for a transition down from level 2; an energy spacing E21 great... | 09/06/2011 |
| 8000367 | High-efficiency unipolar quantum cascade laser The present invention pertains to a unipolar quantum cascade laser consisting of several semiconductor multilayer structures (C) that are layered behind one another between two electrodes in a periodic sequence such that an active area (A) and a transitional or inje... | 08/16/2011 |
| 7974324 | Surface-emitting laser device A surface-emitting laser device includes: a substrate; a low refractive index layer with a refractive index nL and disposed on the substrate; a light emitting layered structure with a refractive index nH, where nH>nL, the ... | 07/05/2011 |
| 7965752 | Native green laser semiconductor devices A semiconductor laser device operable to emit light having a desired wavelength in the green spectral range. The semiconductor laser device may include a pumping source and a laser structure including a substrate, a first cladding layer, and one or more active regio... | 06/21/2011 |
| 7953134 | Semiconductor light-emitting device A semiconductor light-emitting device includes a substrate, a first cladding layer over the substrate, an active region on the first cladding layer, and a second cladding layer on the active region, wherein the active region includes a first type barrier layer that ... | 05/31/2011 |
| 7912104 | Semiconductor laser diode A semiconductor laser diode capable of improving reliability and mass-productivity is disclosed. The semiconductor laser diode comprises a first clad layer; a first optical guide layer disposed on the first clad layer; an active layer disposed on the first optical g... | 03/22/2011 |
| 7899104 | EL semiconductor device An n-type cladding layer structure which has good luminescence properties without the use of substances corresponding to RoHS Directive and a high Cl-doping efficiency, i.e. which facilitates the manufacture of a semiconductor optical element and device with low cry... | 03/01/2011 |
| 7885307 | Vertical-cavity surface-emitting semiconductor laser device A vertical-cavity surface-emitting (VCSEL) device has a layer structure including a top DBR mirror, an active layer, a current confinement oxide layer, and a bottom DBR mirror, the layer structure being configured as a mesa post. The current confinement oxide layer ... | 02/08/2011 |
| 7856042 | High efficiency intersubband semiconductor lasers An intersubband quantum cascade laser structure includes multiple coupled laser stages, wherein each stage has a multilayer structure including an electron injector, an active region with at least one quantum well, and an electron reflector. Electrons injected from ... | 12/21/2010 |
| 7826505 | III-V group GaN-based compound semiconductor device A III-V Group GaN-based compound semiconductor device with an improved structure having low current comsumption, high optical output, and a long lifetime is provided. The III-V Group GaN-based compound semiconductor device includes an active layer and a first clad l... | 11/02/2010 |
| 7822089 | Semiconductor layer structure with superlattice The semiconductor layer structure comprises a superlattice (9) composed of alternately stacked layers (9a, 9b) of III-V semiconductor compounds of a first composition (a) and at least one second composition (b). The layers (9 | 10/26/2010 |
| 7809038 | Electro-absorption optical modulator integrated with a laser to produce high speed, uncooled, long distance, low power, 1550 nm optical communication device with optimized parameters In a conventional EA/DFB laser, since the temperature dependence of the operation wavelength of the EA portion is substantially different from that of the DFB portion, the temperature range over which a stable operation is possible is small. In the case of using the... | 10/05/2010 |
| 7804869 | Gallium nitride based semiconductor device with electron blocking layer A semiconductor device comprises an n-side waveguide layer, an active layer in contact with the n-side waveguide layer and a p-side waveguide layer in contact with the active layer. An electron blocking layer is in contact with the p-side waveguide layer and compris... | 09/28/2010 |
| 7792171 | Nitride semiconductor laser device A nitride semiconductor laser device has a group III nitride semiconductor multilayer structure. The group III nitride semiconductor multilayer structure includes an n-type semiconductor layer, a p-type semiconductor layer and a light emitting layer held between the... | 09/07/2010 |
| 7778298 | Semiconductor laser device An object of the invention is to achieve a high output gain waveguide semiconductor laser device exhibiting high reliability by suppressing growth of DLD. A semiconductor laser device includes a semiconductor laser structure of a gain waveguide formed on a semi... | 08/17/2010 |
| 7769066 | Laser diode and method for fabricating same A laser diode and method for fabricating same, wherein the laser diode generally comprises an InGaN compliance layer on a GaN n-type contact layer and an AlGaN/GaN n-type strained super lattice (SLS) on the compliance layer. An n-type GaN separate confinement hetero... | 08/03/2010 |
| 7653105 | Semiconductor laser, method of manufacturing semiconductor laser, optical pickup and optical disk system A semiconductor laser using a nitride type Group III-V compound semiconductor includes: an n-side clad layer; an n-side optical waveguide layer over the n-side clad layer; an active layer over the n-side optical waveguide layer; a p-side optical waveguide layer over... | 01/26/2010 |
| 7428256 | Semiconductor laser device A semiconductor laser device includes an active layer, a pair of guiding layers sandwiching the active layer, and a pair of cladding layers sandwiching the active layer and the pair of guiding layers. The pair of guiding layers are InGaAsP lattice-matched to GaAs. T... | 09/23/2008 |
| 7408183 | Low cost InGaAIN based lasers A method and structure for producing lasers having good optical wavefront characteristics, such as are needed for optical storage includes providing a laser wherein an output beam emerging from the laser front facet is essentially unobstructed by the edges of the se... | 08/05/2008 |
| 7386024 | Quantum cascade laser device A device includes a multiple quantum well with potential barriers and quantum wells, and an electric field element for applying an electric field thereto. The multiple quantum well includes at least two regions A and a region B disposed therebetween. The region A in... | 06/10/2008 |
| 7376163 | Method for producing a waveguide structure in a surface-emitting semiconductor laser and surface-emitting semiconductor laser Methods for producing surface-emitting semi-conductor lasers with tunable waveguiding are disclosed. The laser comprises an active zone containing a pn-transition, surrounded by a first n-doped semiconductor layer and at least one p-doped semiconductor layer. In add... | 05/20/2008 |
| 7368766 | Semiconductor light emitting element and method for fabricating the same The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer. ... | 05/06/2008 |
| 7362787 | Self-mode-locked semiconductor laser An interband self-mode-locked (SML) semiconductor laser utilizes an active waveguide structure that includes an active waveguide section and one or more passive waveguide sections that together enhances self-mode-locking. The SML laser operation is based on enhanced... | 04/22/2008 |
| 7358523 | Method and structure for deep well structures for long wavelength active regions Subwells are added to quantum wells of light emitting semiconductor structures to shift their emission wavelengths to longer wavelengths. Typical applications of the invention are to InGaAs, InGaAsSb, InP and GaN material systems, for example. ... | 04/15/2008 |
| 7359418 | Quantum cascade laser A quantum cascade laser 1, which generates infrared light or other light of a predetermined wavelength by making use of intersubband transitions in a quantum well structure, is arranged by forming, on a GaAs substrate 10, an AlGaAs/GaAs active layer | 04/15/2008 |
| 7346089 | Surface-emitting laser diode with tunnel junction and fabrication method thereof A surface emitting semiconductor laser diode of a tunnel junction type includes a semiconductor substrate, a first reflector, a second reflector, an active region disposed in series between the first and second reflectors, and a tunnel junction region disposed in se... | 03/18/2008 |
| 7333523 | Semiconductor laser device A semiconductor laser device comprising: a first cladding layer of a first conductivity type; an active layer provided on the first cladding layer and having a quantum well structure; an overflow blocking layer of a second conductivity type provided on the overflow ... | 02/19/2008 |
| 7313291 | Optical modulator The invention relates to an optically pumped multilayered modulator having surface-normal geometry. The multilayer structure comprises an absorber section through which an optical signal (401) to be modulated is coupled from an input (401) to an output... | 12/25/2007 |
| 7310469 | Waveguide PIN photodiode having graded index distribution centering around optical absorption layer A waveguide PIN photodiode is provided. The waveguide PIN photodiode includes a lower light guide layer, a light absorption layer, an upper light guide layer, and a cladding layer. The lower light guide is formed on a substrate, and the light absorption layer is for... | 12/18/2007 |
| 7310361 | Intersubband semiconductor lasers with enhanced subband depopulation rate Intersubband semiconductor lasers (ISLs) are of great interest for mid-infrared (2-20 μm) device applications. These semiconductor devices have a wide range of applications from pollution detection and industrial monitoring to military functions. ISLs have g... | 12/18/2007 |
| 7301977 | Tuneable unipolar lasers A unipolar semiconductor laser is provided in which an active region is sandwiched in a guiding structure between an upper and lower cladding layer, the lower cladding layer being situated on a semiconducting substrate. The unipolar semiconductor laser comprises a r... | 11/27/2007 |
| 7295587 | Semiconductor laser having optical guide layer doped for decreasing resistance In a semiconductor laser element: a lower cladding layer of a first conductivity type, a quantum-well active layer, an upper cladding layer of a second conductivity type, a contact layer of the second conductivity type, and a first electrode of the second conductivi... | 11/13/2007 |
| 7286573 | Conversion of type of quantum well structure A method for converting a Type 2 quantum well semiconductor material to a Type 1 material. A second layer of undoped material is placed between first and third layers of selectively doped material, which are separated from the second layer by undoped layers having s... | 10/23/2007 |
| 7282745 | Nitride based semiconductor light-emitting device The present invention provides a semiconductor device having a semiconductor multi-layer structure which includes at least an active layer having at least a quantum well, and the active layer further including at least a luminescent layer of InxAly | 10/16/2007 |
| 7280576 | Type II mid-infrared quantum well laser A mid-infrared emitting indirect bandgap quantum well semiconductor laser with an optical waveguide structure having an active waveguide core. The active waveguide core comprises at least one repetition of a sub-region comprising in the following order a first wide ... | 10/09/2007 |
| 7198564 | Deboning system of meat A deboning system of meat for a small or intermediate processing factory in which the space is saved while reduction the cost by limiting the processing range of a work thereby limiting the processing functions to those of high necessity. The deboning system of meat... | 04/03/2007 |
| 7180924 | Semiconductor apparatus and a semiconductor unit, the semiconductor unit including a functional layer including a semiconductor element, and a highly conductive layer The invention provides a semiconductor unit and a semiconductor apparatus having a low electric resistance as a whole, even when the electric resistance of a functional layer or a semiconductor substrate is high. A method of making the semiconductor unit and apparat... | 02/20/2007 |
