Class 365/9 - Hall effect

Subclass of Class 365 - Static information storage and retrieval
Definition: Subject matter where the detector includes an element exhibiting
No. of patents: 29
Last issue date: 10/21/2008

Browse patents
Browse applications

Number	Title	Issue Date
7440302	Ferroelectric information storage device and method of writing/reading information An information storage device includes a ferroelectric layer having a first surface and a second surface opposite the first surface. A common electrode layer is formed on the first surface of the ferroelectric layer. At least two conductive track layers separated fr...	10/21/2008
7411803	Resistive coupled hall effect sensor A memory device. There is a hall effect device, a current source in electrical communication with the hall effect device, a current drain in electrical communication with the hall effect device, a first sensor arm in electrical communication with the hall effect dev...	08/12/2008
7364092	Electronic stripe cards An electronic stripe card senses when it is being swiped passed a read head, and drives a conductive path to mimic a magnetic card track. Multiple conductive paths may be driven in an interleaved fashion one after another. The card may include multiple swipe sensors...	04/29/2008
7289344	Reverse coupling effect with timing information for non-volatile memory Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in neighboring floating gates (or other neighboring charge stori...	10/30/2007
7257021	Non-volatile ferromagnetic memory having sensor circuitry shared with its state change circuitry A ferromagnetic memory cell is disclosed having a base (21), oriented in a horizontal plane, a bit (19), made of a ferromagnetic material, and a sense/write line (20), positioned proximate the bit (19) sufficient to detect the directed po...	08/14/2007
7184312	One transistor SOI non-volatile random access memory cell One aspect of the present subject matter relates to a memory cell, or more specifically, to a one-transistor SOI non-volatile memory cell. In various embodiments, the memory cell includes a substrate, a buried insulator layer formed on the substrate, and a transisto...	02/27/2007
7177180	Method and apparatus for reading data from a ferromagnetic memory cell A ferromagnetic memory cell is disclosed. The cell includes a bit (10), made of a ferromagnetic material, having a remnant polarity. The cell also includes a read drive line (20) coupled to a first portion of the bit (10), to feed a current into...	02/13/2007
7173847	Magnetic storage cell A horizontally disposed elliptical or rectangular magnetic memory cell includes at least two conductive lines to carry current and a magnetic element disposed between the conductive lines. The current through the conductive lines induces a magnetic field, such that ...	02/06/2007
7130216	One-device non-volatile random access memory cell One aspect of the present subject matter relates to a one-device non-volatile memory cell. The memory cell includes a body region, a first diffusion region and a second diffusion region formed in the body region. A channel region is formed in the body region between...	10/31/2006
7042027	Gated lateral thyristor-based random access memory cell (GLTRAM) One aspect of the present subject matter relates to a memory cell, or more specifically, to a scalable GLTRAM cell that provides DRAM-like density and SRAM-like performance. According to various embodiments, the memory cell includes an access transistor and a gated,...	05/09/2006
6917078	One transistor SOI non-volatile random access memory cell One aspect of the present subject matter relates to a memory cell, or more specifically, to a one-transistor SOI non-volatile memory cell. In various embodiments, the memory cell includes a substrate, a buried insulator layer formed on the substrate, and a transisto...	07/12/2005
6317354	Non-volatile random access ferromagnetic memory with single collector sensor A non-volatile RAM device is disclosed which utilizes a plurality of ferromagnetic bits (6) each surrounded by a coil of a write line (13) for directing the remnant polarity thereof is disclosed. The direction of magnetic remnance in each bit (6) is dicta...	11/13/2001
6307774	Magnetoelectronic memory array A hybrid memory device combines a ferromagnetic layer and a Hall Effect device. The ferromagnetic layer is magnetically coupled to a portion of a Hall plate, and when such plate is appropriately biased, a Hall Effect signal can be generated whose value is...	10/23/2001
6169687	High density and speed magneto-electronic memory for use in computing system A new type of magneto-electronic element, such as a spin transistor or hybrid hall effect device, can be used to construct memory systems to replace conventional cache, primary, secondary and long term (archival) storage. The magneto-electronic element is...	01/02/2001
5926414	High-efficiency miniature magnetic integrated circuit structures Magnetic integrated circuit structures exhibit desirable characteristics for purposes of realizing a magnetic semiconductor memory. In combination with a carrier-deflection-type magnetic field sensor, each of a variety of magnet structures realize a condi...	07/20/1999
5396455	Magnetic non-volatile random access memory A non-volatile random access memory is described incorporating a plurality of memory cells, each memory cell having a Hall effect device including amorphous magnetic material and a switch for directing current through the flail effect device. An array of ...	03/07/1995
5361226	Magnetic thin film memory device A magnetic thin film memory device having information recorded in a magnetic thin film thereof by the direction of magnetization, and adapted to reproduce the recorded information on the basis of the voltage generated as a result of the change of the magn...	11/01/1994
5331589	Magnetic STM with a non-magnetic tip An apparatus and method for imaging the magnetic structure and the magnetic domains of a sample is described incorporating a scanning tunneling microscope (STM), a voltage generator for varying the voltage on the tip, an ammeter for measuring the current ...	07/19/1994
5295097	Nonvolatile random access memory A nonvolatile random access memory is disclosed having a substrate (50) carrying separate magnetically polarizable domains (19) each surrounded by a full write loop member (18) and arranged to penetrate the Hall channel (36) of a dual drain FET (16) with ...	03/15/1994
5089991	Non-volatile memory cell A non-volatile, static magnetic memory device, whose operation is based on the Hall effect, is disclosed. The device includes a magnetic patch which stores data in the form of a magnetic field, a semiconductor Hall bar and a pair of integrally-formed bipo...	02/18/1992
5068826	Hall effect semiconductor memory cell A non-volatile, static magnetic memory device, whose operation is based on the Hall effect, is disclosed. The device includes a magnetic patch which stores data in the form of a magnetic field, a semiconductor Hall bar and a pair of integrally-formed bipo...	11/26/1991
4791604	Sheet random access memory A sheet random access memory (SHRAM) is a truly random access, nonvolatile and transportable memory characterized by the cell density, size and power requirements of smaller dynamic memories but having the nonvolatile character of core memories or magneti...	12/13/1988
4345317	Magnetic domain memory with Hall effect detector A Hall detector for magnetic bubbles is characterized by an apertured detection area designed to detect only the return field of the bubble. A series arrangement of the detectors is designed to mate with a bubble expander for detecting a strip domain for ...	08/17/1982
4315214	Displacement sensor using a galvanomagnetic element positioned in a periodically inverted magnetic field Disclosed is a displacement sensor, comprising a pair of plates of magnetic bubble material disposed parallelly to each other across a space and a galvanomagnetic element disposed within the magnetic field formed in the aforementioned space and adapted to...	02/09/1982
4035785	Bubble domain sensor-error detector An improved thick film sensor for detection of magnetic bubble domains which can be configured to provide soft error detection and full data rate sensing. The sensor can be fabricated using single level masking techniques and is typically a magnetoresisti...	07/12/1977
3979738	Compound detector for magnetic domain memory devices In a magnetic domain memory, a domain detector system includes a passive domain splitter in a domain propagation track, a first detector in the propagation track for detecting one of the domains from the splitter, and a second detector in an auxiliary pro...	09/07/1976
3975710	Character pattern recognition method and apparatus using feature enhanced magnetic domain patterns A character pattern recognition method and apparatus for recognizing an unknown character pattern in accordance with a correlation between the unknown character pattern and each known standard character pattern, in which the unknown character pattern is t...	08/17/1976
3973182	Method and apparatus for detecting uneven magnetic field by hall effect in semiconductor The invention disclosed provides a semiconductor device and method whereby an inverted magnetic field such as a magnetic bubble is detected by placing one part of the semiconductor device comprising at least one Hall element having two input electrodes at...	08/03/1976
3938110	Method of controlling magnetic strip domains A method of controlling magnetic strip domains is disclosed wherein a magnetic material having at least one ion-implanted region is placed under a bias magnetic condition which permits magnetic strip domains to exist in said magnetic material and subjecte...	02/10/1976

PatentStorm

Quotables

PatentStorm News

Class 365/9 - Hall effect