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| Number | Title | Issue Date |
| 8411481 | Information storage devices using magnetic domain wall movement and methods of manufacturing the same In an information storage device, a writing magnetic layer is formed on a substrate and has a magnetic domain wall. A connecting magnetic layer is formed on the writing magnetic layer, and an information storing magnetic layer is formed on an upper portion of side s... | 04/02/2013 |
| 8351235 | Level shift circuit A feedback circuit by which an output of a memory device for storing level-shifted data can be fed back to the input side includes inverters, resistors, and transistors. The resistance value of combined resistance for pulling up or down first and second switching de... | 01/08/2013 |
| 8339829 | Information storage devices using movement of magnetic domain walls and methods of manufacturing the same An information storage device using movement of magnetic domain walls includes a writing magnetic layer having a magnetic domain wall. A stack structure is formed on the writing magnetic layer. The stack structure includes a connecting magnetic layer and an informat... | 12/25/2012 |
| 8300445 | Nanowire and memory device using it as a medium for current-induced domain wall displacement Disclosed herein are a nanowire and a current-induced domain wall displacement-type memory device using the same. The nanowire has perpendicular magnetic anisotropy and is configured in a manner that when a parameter Q, calculated by a saturation magnetization per u... | 10/30/2012 |
| 8270197 | Method of operating information storage device using magnetic domain wall movement A method of operating an information storage device using a magnetic domain wall movement in a magnetic nanowire is provided. The magnetic nanowire includes a plurality of magnetic domains and pinning sites formed in regions between the magnetic domains. The method ... | 09/18/2012 |
| 8228706 | Magnetic shift register memory device In one embodiment, the invention is a magnetic shift register memory device. One embodiment of a memory cell includes a magnetic column including a plurality of magnetic domains, a reader coupled to the magnetic column, for reading data from the magnetic domains, a ... | 07/24/2012 |
| 8102692 | Data storage devices using magnetic domain wall movement and methods of operating the same Data storage devices using movement of magnetic domain walls and methods of operating the same are provided. A data storage device includes a magnetic track having a verifying region. Within the verifying region, first and second magnetic domains are arranged altern... | 01/24/2012 |
| 8102691 | Magnetic tracks with domain wall storage anchors Magnetic shift registers in which data writing and reading is accomplished by moving the magnetic domain walls by electric current. Various embodiments of domain wall nodes or anchors that stabilize a domain wall are provided. In some embodiments, the wall anchors a... | 01/24/2012 |
| 8054666 | Information storage devices using magnetic domain wall movement and methods of manufacturing the same In an information storage device, a writing magnetic layer is formed on a substrate and has a magnetic domain wall. A connecting magnetic layer is formed on the writing magnetic layer, and an information storing magnetic layer is formed on an upper portion of side s... | 11/08/2011 |
| 7961491 | Data storage device using magnetic domain wall movement and method of operating the same Provided are a data storage device using a magnetic domain wall movement and a method of operating the data storage device. The data storage device includes a magnetic layer which has a plurality of magnetic domains, a current applying unit which applies current for... | 06/14/2011 |
| 7957175 | Information storage devices using movement of magnetic domain walls and methods of manufacturing the same An information storage device using movement of magnetic domain walls includes a writing magnetic layer having a magnetic domain wall. A stack structure is formed on the writing magnetic layer. The stack structure includes a connecting magnetic layer and an informat... | 06/07/2011 |
| 7952906 | Information storage devices using magnetic domain wall movement and methods of manufacturing the same An information storage device includes a writing magnetic layer including a magnetic domain wall. An information storing magnetic layer is connected to the writing magnetic layer, and includes at least one magnetic domain wall. The information storage device also in... | 05/31/2011 |
| 7864556 | Magnetic domain information storage device and method of manufacturing the same Example embodiments may provide magnetic domain information storage devices with trenches and a method of manufacturing the information storage device. Example embodiment information storage devices may include a magnetic layer on a substrate having a plurality of m... | 01/04/2011 |
| 7859881 | Magnetic memory device and write/read method of the same A magnetic memory device includes a first magnetic line which has a plurality of cells made of magnetic domains partitioned by domain walls, and in which information is recorded in each cell, a first write element formed at one end portion of the first magnetic line... | 12/28/2010 |
| 7796415 | Magnetic layer, method of forming the magnetic layer, information storage device including the magnetic layer, and method of manufacturing the information storage device Provided are a magnetic layer, a method of forming the magnetic layer, an information storage device, and a method of manufacturing the information storage device. The information storage device may include a magnetic track having a plurality of magnetic domains, a ... | 09/14/2010 |
| 7768809 | Wall nucleation propagation for racetrack memory A shift register is provided, the shift register comprising at least one track including a storage region. The storage region comprises a plurality of magnetic domains for storing data. A given first one of the plurality of magnetic domains is adjacent to a given se... | 08/03/2010 |
| 7760535 | Sequence of current pulses for depinning magnetic domain walls A method and structure for depinning a domain wall that is in spatial confinement by a pinning potential to within a local region of a magnetic device. At least one current pulse applied to the domain has a pulse length sufficiently close to a precession period of t... | 07/20/2010 |
| 7710756 | Semiconductor device using magnetic domain wall moving A semiconductor device includes a magnetic wire having a plurality of magnetic domains, wherein the magnetic wire comprises a magnetic domain wall that is moved by either a pulse field or a pulse current. The magnetic wire of the semiconductor device does not requir... | 05/04/2010 |
| 7710757 | Magnetic track using magnetic domain wall movement and information storage device including the same Provided are a magnetic track using magnetic domain wall movement and an information storage device including the same. A magnetic track may comprise a zigzag shaped storage track including a plurality of first magnetic layers in parallel with each other, and stacke... | 05/04/2010 |
| 7667994 | Magnetic racetrack with current-controlled motion of domain walls within an undulating energy landscape A method for use with a magnetic racetrack device includes placing domain walls having a first structure and domain walls having a second, different structure along the racetrack at stable positions corresponding to different regions within the device. The domain wa... | 02/23/2010 |
| 7652906 | Memory device employing magnetic domain wall movement Provided is a memory device employing magnetic domain wall movement. The memory device includes a first track, an interconnecting layer, and a second track. The first track including a magnetic material is formed in a first direction. The interconnecting layer is fo... | 01/26/2010 |
| 7002217 | Electrostatic discharge mitigation structure and methods thereof using a dissipative capacitor with voltage dependent resistive material The present invention relates to structures and methods that reduce ESD damage to electronic devices. In an embodiment, the structure is a parallel plate dissipative capacitor formed by sandwiching a dissipative dielectric layer between two conductive layers in seri... | 02/21/2006 |
| 6791526 | Drive circuit A drive circuit, for example a gate line drive circuit for a TFT liquid-crystal display, having a circuit size smaller than in the past. A TFT drive circuit has the shifting direction of drive data sequentially shifted through shift registers (SR116-R60 | 09/14/2004 |
| 4250565 | Symmetrical memory plane for cross-tie wall memory system Disclosed is a cross-tie wall memory system for the generating, propagating and detecting of binary data represented by the presence or absence of cross-tie, Bloch-line pairs along a cross-tie wall in a thin magnetic layer. The system includes a three-lev... | 02/10/1981 |
| 4052704 | Apparatus for reordering the sequence of data stored in a serial memory This memory management system provides an improved search logic for locating pages of data stored parallel-by-bit, serially-by-page in a shift register memory and for moving those pages to a position at the head of the file. Searching alternates between f... | 10/04/1977 |
