Bizarre Patents
A coffin, for allowing inclination for display of a deceased person in a natural position.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7936580 | MRAM diode array and access method A memory unit includes a magnetic tunnel junction data cell is electrically coupled to a bit line and a source line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a write current ... | 05/03/2011 |
| 7511981 | Non-volatile memory device A non-volatile memory device according to one embodiment comprises a plurality of memory cells each comprising a magneto resistive element and a selection transistor; wherein at least some of the memory cells are arranged into a two dimensional array; a first interc... | 03/31/2009 |
| 7483286 | Semiconductor memory device with high permeability lines interposed between adjacent transmission lines A memory device is provided with a structure for improved transmission line operation on integrated circuits. The structure for transmission line operation includes a first layer of electrically conductive material on a substrate. A first layer of insulating materia... | 01/27/2009 |
| 7471539 | High current interconnect structure for IC memory device programming A method and system for a high current semiconductor memory cell provides a semiconductor memory cell with two current carrying structures. At least one of the current carrying structures is segmented and formed of narrow wire segments from one or more levels couple... | 12/30/2008 |
| 7443707 | Magnetic random access memory array with free layer locking mechanism and method of its use A method of using an MTJ MRAM cell element having two magnetization states of greater and lesser stability. During switching, the free layer is first placed in the less stable state by a word line current, so that a small bit line current can switch its magnetizatio... | 10/28/2008 |
| 7414908 | Magnetic memory device A Magnetic Random Access Memory (MRAM), in which very little current flows through MTJ elements and very little voltage is applied across them, the MRAM being provided with sense-amplifiers capable of amplifying the potential difference between their corresponding p... | 08/19/2008 |
| 7405958 | Magnetic memory device having XP cell and Str cell in one chip According to the semiconductor memory device of this invention, an XP type MRAM cell array and an STr type MRAM cell array are formed on a single chip. The XP type MRAM cell array is laid over the STr type MRAM cell array to form a layered structure. The STr type MR... | 07/29/2008 |
| 7391637 | Semiconductor memory device with high permeability composite films to reduce noise in high speed interconnects A memory device is provided with a structure for improved transmission line operation on integrated circuits. The structure for transmission line operation includes a first layer of electrically conductive material on a substrate. A first layer of insulating materia... | 06/24/2008 |
| 7385842 | Magnetic memory having synthetic antiferromagnetic pinned layer A magnetic memory element includes a sense structure, a tunnel barrier adjacent the sense structure, and a synthetic antiferromagnet (SAF) adjacent the tunnel barrier on a side opposite the sense structure. The SAF includes an antiferromagnetic structure adjacent a ... | 06/10/2008 |
| 7378698 | Magnetic tunnel junction and memory device including the same A magnetic tunnel junction device includes a magnetically programmable free magnetic layer. The free magnetic layer includes a lamination of at least two ferromagnetic layers and at least one intermediate layer interposed between the at least two ferromagnetic layer... | 05/27/2008 |
| 7372757 | Magnetic memory device with moving magnetic domain walls A magnetic memory device includes a plurality of first metal lines arranged in parallel on a substrate and including a plurality of magnetic domains with variable magnetization directions. A plurality of second metal lines is arranged on the substrate perpendicular ... | 05/13/2008 |
| 7355883 | Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory A magnetoresistance effect element includes a first ferromagnetic layer (1), insulating layer (3) overlying the first ferromagnetic layer, and second ferromagnetic layer (2) overlying the insulating layer. The insulating layer has formed a throu... | 04/08/2008 |
| 7349234 | Magnetic memory array A magnetic random access memory (MRAM) device disclosed herein includes an array of magnetic memory cells having magnetoresistive (MR) stacks. The MRAM array also includes a series of bit lines and word lines coupled to the MR stacks. The array layout provides for r... | 03/25/2008 |
| 7349235 | Non-volatile memory device A non-volatile memory device according to one embodiment includes a plurality of memory cells each comprising a magneto resistive element and a selection transistor, where the memory cells are arranged into a two dimensional array. A first interconnect line extends ... | 03/25/2008 |
| 7345367 | Magnetic memory device and producing method thereof A magnetic memory device exhibits improved writing characteristics by providing a magnetic flux concentrator which efficiently applies the magnetic field, which is generated by the writing word line, to the memory layer of the TMR element. The magnetic memory device... | 03/18/2008 |
| 7345899 | Memory having storage locations within a common volume of phase change material A memory includes a volume of phase change material, a first transistor coupled to the volume of phase change material for accessing a first storage location within the volume of phase change material, and a second transistor coupled to the volume of phase change ma... | 03/18/2008 |
| 7339812 | Stacked 1T-memory cell structure This invention relates to memory technology and new variations on memory array architecture to incorporate certain advantages from both cross-point and 1T-1Cell architectures. The fast read-time and higher signal-to-noise ratio of the 1T-1Cell architecture and the h... | 03/04/2008 |
| 7339811 | Stacked columnar 1T-nMTJ MRAM structure and its method of formation and operation This invention relates to an MRAM array architecture which incorporates certain advantages from both cross-point and 1T-1MTJ architectures during reading operations. The fast read-time and higher signal to noise ratio of the 1T-1MTJ architecture and the higher packi... | 03/04/2008 |
| 7336515 | Method of manipulating a quantum system comprising a magnetic moment A method for manipulating a quantum system comprises at least one mobile charge carrier with a magnetic moment. The method comprises the steps or acts of applying magnetic field to the charge carrier. The magnetic is spatially non-homogeneous. The method also compri... | 02/26/2008 |
| 7333361 | Biosensor and sensing cell array using the same A biosensor and a sensing cell array using a biosensor are disclosed. Adjacent materials containing a plurality of different ingredients are analyzed to determine the ingredients based on their magnetic susceptibility or dielectric constant. A sensing cell array inc... | 02/19/2008 |
| 7330367 | Stacked 1T-MTJ MRAM structure This invention relates to MRAM technology and new variations on MRAM array architecture to incorporate certain advantages from both cross-point and 1T-1MTJ architectures. The fast read-time and higher signal-to-noise ratio of the 1T-1MTJ architecture and the higher ... | 02/12/2008 |
| 7313043 | Magnetic Memory Array A magnetic memory is disclosed. In one embodiment, the magnetic memory array includes a plurality of cell columns and a pair of reference cell columns, including a first reference cell column and a second reference cell column. A comparator is provided with a first ... | 12/25/2007 |
| 7307876 | High speed low power annular magnetic devices based on current induced spin-momentum transfer A high speed and low power method to control and switch the magnetization direction and/or helicity of a magnetic region in a magnetic device for memory cells using spin polarized electrical current. The magnetic device comprises a reference magnetic layer with a fi... | 12/11/2007 |
| 7295465 | Thin film magnetic memory device reducing a charging time of a data line in a data read operation During data reading, a sense enable signal is activated to start charging of a data line prior to formation of a current path including the data line and a selected memory cell in accordance with row and column selecting operations. Charging of the data line is comp... | 11/13/2007 |
| 7292470 | Thin film magnetic memory device writing data with bidirectional current An end of a selected bit line in a selected column is electrically coupled to an end of a corresponding current return line by one of first and second write column select gates, which are selectively turned on in response to results of column selection. A data write... | 11/06/2007 |
| 7283381 | System and methods for addressing a matrix incorporating virtual columns and addressing layers A system and methods for addressing unique locations in a matrix. According to some embodiments, the system includes a plurality of uniquely addressable locations. A plurality of virtual columns that include a plurality of serially connected switch elements provide ... | 10/16/2007 |
| 7272028 | MRAM cell with split conductive lines A magnetoresistive memory cell includes N magnetoresistive elements conductively connected in series (where N is an integer greater than or equal to two). The magnetoresistive elements, respectively, are positioned between at least two adjacent conductive lines. At ... | 09/18/2007 |
| 7272064 | Thin film magnetic memory device for writing data of a plurality of bits in parallel For writing K-bit write data in parallel (K is integer at least 2), bit lines each arranged for each memory cell columns and at least K current return lines are provided. K selected bit lines to write the K-bit write data are connected in series in a single current ... | 09/18/2007 |
| 7269061 | Magnetic memory A magnetic memory has a first, a second and a third magnetic transistor. The first magnetic transistor has a first magnetic section and a second magnetic section, wherein the first magnetic section couples to a high voltage end. The second magnetic transistor has a ... | 09/11/2007 |
| 7266011 | Magneto-resistance effect element and magnetic memory The magnetic memory includes a plurality of memory cells, each memory cell including: at least one writing wire; at least one data storage portion, provided on at least one portion of an outer periphery of the writing wire, which comprises a ferromagnetic material w... | 09/04/2007 |
| 7257021 | Non-volatile ferromagnetic memory having sensor circuitry shared with its state change circuitry A ferromagnetic memory cell is disclosed having a base (21), oriented in a horizontal plane, a bit (19), made of a ferromagnetic material, and a sense/write line (20), positioned proximate the bit (19) sufficient to detect the directed po... | 08/14/2007 |
| 7248524 | Operating temperature optimization in a ferroelectric or electret memory In a heating and temperature control system for a data storage apparatus comprising at least one matrix-addressable ferroelectric or electret memory device, Joule heating means are provided in the memory device, a temperature determining means is connected with cont... | 07/24/2007 |
| 7208323 | Method for forming magneto-resistive memory cells with shape anisotropy A magneto-resistive memory comprising magneto-resistive memory cells is disclosed, comprising a pinned magnetic layer and a free magnetic layer. The two magnetic layers are formed having widened regions at the ends of the layers. As such, the shape made out by the m... | 04/24/2007 |
| 7206223 | MRAM memory with residual write field reset A magnetoresistive random access memory (MRAM) (900) that is susceptible to a residual magnetic field is compensated during a write operation. A first magnetic field (208) is applied to a memory cell during a first time period, the first magnetic field... | 04/17/2007 |
| 7200033 | MRAM with coil for creating offset field An MRAM memory chip includes a plurality of magnetoresistive memory cells each including a magnetic tunnel junction having first (fixed) and second (free) magnetic regions, where the second magnetic region includes at least two ferromagnetic layers that are antiferr... | 04/03/2007 |
| 7196957 | Magnetic memory structure using heater lines to assist in writing operations The invention includes a stacked magnetic memory structure. The magnetic memory structure includes a stacked magnetic memory structure. The first layer includes a first plurality of magnetic tunnel junctions. A second layer is formed adjacent to the first layer. The... | 03/27/2007 |
| 7180769 | World line segment select transistor on word line current source side The word line segment select transistor of a segmented word line array is placed on the word line current source side. This eliminates many undesirable effects currently associated with segmented word line MRAM arrays. ... | 02/20/2007 |
| 7177180 | Method and apparatus for reading data from a ferromagnetic memory cell A ferromagnetic memory cell is disclosed. The cell includes a bit (10), made of a ferromagnetic material, having a remnant polarity. The cell also includes a read drive line (20) coupled to a first portion of the bit (10), to feed a current into... | 02/13/2007 |
| 7173841 | Magnetic memory array A magnetic random access memory (MRAM) device disclosed herein includes an array of magnetic memory cells having magnetoresistive (MR) stacks. The MRAM array also includes a series of bit lines and word lines coupled to the MR stacks. The array layout provides for r... | 02/06/2007 |
| 7173847 | Magnetic storage cell A horizontally disposed elliptical or rectangular magnetic memory cell includes at least two conductive lines to carry current and a magnetic element disposed between the conductive lines. The current through the conductive lines induces a magnetic field, such that ... | 02/06/2007 |
