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| Number | Title | Issue Date |
| 8125813 | Variance reduction simulation system, program product, and related methods A system to provide enhanced computational efficiency in a simulation of particle transport through a medium, program product, and related methods are provided. The system can include a simulation data administrator server having access to an interaction database in... | 02/28/2012 |
| 7733681 | Ferroelectric memory with amplification between sub bit-line and main bit-line A memory capable of suppressing increase of the chip area thereof while increasing a read voltage is obtained. This memory comprises a memory cell array including a plurality of subarrays, a sub bit line arranged on each subarray and provided to be connectable to a ... | 06/08/2010 |
| 7558098 | Ferroelectric memory with sub bit-lines connected to each other and to fixed potentials A memory capable of suppressing increase of a chip area thereof while preventing nonselected subarrays from disturbance is obtained. This memory comprises a first transistor for connecting respective sub bit lines with each other, and connects the sub bit lines of t... | 07/07/2009 |
| 7525830 | Nonvolatile ferroelectric perpendicular electrode cell, FeRAM having the cell and method for manufacturing the cell A nonvolatile ferroelectric perpendicular electrode cell comprises a ferroelectric capacitor and a serial PN diode switch. The ferroelectric capacitor includes a word line perpendicular electrode as a first electrode and a storage perpendicular electrode as a second... | 04/28/2009 |
| 7463502 | Ultra low-cost solid-state memory A three-dimensional solid-state memory is formed from a plurality of bit lines, a plurality of layers, a plurality of tree structures and a plurality of plate lines. Bit lines extend in a first direction in a first plane. Each layer includes an array of memory cells... | 12/09/2008 |
| 7436689 | Non-volatile semiconductor memory When an address storing/comparing circuit stores no address identical to an external input address in read operation, in a main memory read data is written back to a data storing area after data read therefrom, and data indicating a sum of a predetermined value and ... | 10/14/2008 |
| 7428162 | Memory device including a plurality of capacitors A memory device including: a lower electrode; a ferroelectric layer formed above the lower electrode; a charge compensation layer formed above the ferroelectric layer and including an oxide having a composition differing from a composition of the ferroelectric layer... | 09/23/2008 |
| 7411809 | Ferroelectric memory to be tested by applying disturbance voltage to a plurality of ferroelectric capacitors at once in direction to weaken polarization, and method of testing the same A unit cell is formed by a ferroelectric capacitor and first MOS transistor, and a block is formed by connecting a plurality of unit cells in series. The gates of the first MOS transistors in the individual unit cells are connected to word lines, which are selective... | 08/12/2008 |
| 7388769 | Semiconductor memory device A semiconductor memory device includes plural memory cells MC arranged in a matrix, plural bit lines BL and plural plate line voltage supply lines SCP which are arranged in a row direction, plural sense amplifier circuits SA which are arranged in a column direction ... | 06/17/2008 |
| 7352633 | Multibit memory cell Provided are a method, system and device for storing multiple bits into a multibit memory cell. In the illustrated embodiment, each multibit memory cell is a “quadbit” cell capable of storing 4 bits which are read out on four bit lines of the cell in response to... | 04/01/2008 |
| 7345899 | Memory having storage locations within a common volume of phase change material A memory includes a volume of phase change material, a first transistor coupled to the volume of phase change material for accessing a first storage location within the volume of phase change material, and a second transistor coupled to the volume of phase change ma... | 03/18/2008 |
| 7309888 | Spin based electronic device A thin film sensing device operates based on a spin polarized current. The spin device includes ferromagnetic layers characterized by different coercivities and/or magnetization states, and one or more low transmission barriers in between. The device is further conf... | 12/18/2007 |
| 7307872 | Nonvolatile semiconductor static random access memory device A nonvolatile semiconductor memory device obtained by combining a nonvolatile memory device with a SRAM is provided to improve operating speed and reliability. The nonvolatile semiconductor memory device includes a plurality of data registers. Preferably, each of th... | 12/11/2007 |
| 7307867 | Over-driven access method and device for ferroelectric memory An over-driven access method and device for ferroelectric memory. When accessing the data stored in a ferroelectric memory, the invention further provides an over-driven current to slightly reduce/raise the voltages in bit lines BL and BL′ to further enlarge the v... | 12/11/2007 |
| 7307866 | Ferroelectric memory and method for reading data from the ferroelectric memory A ferroelectric memory of the present invention comprises: a plurality of normal cells, each of which includes a first ferroelectric capacitor for holding data and a first transistor connected to a first electrode of the first ferroelectric capacitor; a first bit li... | 12/11/2007 |
| 7304880 | Electric switch and memory device using the same An electric switch includes a ferroelectric substrate to which metal is added, a pair of electrodes provided on the ferroelectric substrate, and an electric field applying portion for changing the direction of polarization in part of the ferroelectric substrate.... | 12/04/2007 |
| 7276755 | Integrated circuit and method of manufacture An integrated circuit having a plurality of active areas separated from each other by a field region and a method for manufacturing the integrated circuit. A first polysilicon finger is formed over the first active area and the field region and a second polysilicon ... | 10/02/2007 |
| 7253466 | Crossbar array microelectronic electrochemical cells The present invention provides microelectronic electrochemical structures and related fabrication methods. A composite microelectronic structure is provided that includes first and second conductors dielectrically isolated from one another at a crossing thereof, the... | 08/07/2007 |
| 7245518 | Ferroelectric memory A ferroelectric memory includes a memory cell array having a plurality of memory cells with ferroelectric capacitors arranged therein, a plurality of word lines, a plurality of plate lines, and a plurality of plate line selection circuits. An L-th plate line selecti... | 07/17/2007 |
| 7227770 | Ferroelectric-type nonvolatile semiconductor memory A ferroelectric-type nonvolatile semiconductor memory comprising a plurality of bit lines and a plurality of memory cells, each memory cell comprising a first electrode, a ferroelectric layer formed at least on said first electrode... | 06/05/2007 |
| 7227774 | MRAM integrated circuits, MRAM circuits, and systems for testing MRAM integrated circuits An integrated circuit includes operational circuitry; a sensor configured to sense an environmental parameter; and adjustment circuitry coupled to the sensor and to the operational circuitry and configured to affect the operational circuitry to at least partially co... | 06/05/2007 |
| 7212430 | Semiconductor memory A ferroelectric memory has a plurality of memory cells respectively having a cell transistor and ferroelectric capacitor whose one terminal is connected with the cell transistor, a plurality of word lines respectively connected with said cell transistor, a plurality... | 05/01/2007 |
| 7212431 | Nonvolatile ferroelectric memory device and control method thereof A nonvolatile ferroelectric memory device and a control method thereof are provided to control read/write operations of memory cell arrays whose channel resistance is differentiated depending on a polarity state of a ferroelectric material. In the device, data read ... | 05/01/2007 |
| 7203128 | Ferroelectric memory device and electronic apparatus A ferroelectric memory device characterized in comprising: a voltage source for generating a predetermined voltage; a first bit line and a second bit line; a first ferroelectric capacitor having one end electrically connected to the first bit line; a first resistanc... | 04/10/2007 |
| 7203103 | Ferroelectric memory device and electronic apparatus A ferroelectric memory device equipped with: a voltage source for generating a predetermined voltage; a first ferroelectric capacitor having one end electrically connected to a first bit line; a first resistance having a first resistance value, provided between the ... | 04/10/2007 |
| 7197231 | Recording apparatus and method with selection of first tuner or second tuner for receiving image data of designated channel A recording apparatus includes an input device for inputting a television signal and channel information relating to the television signal from an external receiving apparatus which receives the television signal and generates the channel information, a recording de... | 03/27/2007 |
| 7184293 | Crosspoint-type ferroelectric memory A crosspoint-type ferroelectric memory is provided. In the crosspoint-type ferroelectric memory, a first memory cell array and a second memory cell array are stacked with a first interlayer insulating layer and a second interlayer insulating layer therebetween. The ... | 02/27/2007 |
| 7184289 | Parallel electrode memory A series of address lines extend in a first direction through at least two layers of memory material spaced apart in the first direction. The memory material may be a ferroelectric polymer in one embodiment. The arrangement of lines and layers may increase the densi... | 02/27/2007 |
| 7184294 | Ferroelectric-type nonvolatile semiconductor memory A ferroelectric-type nonvolatile semiconductor memory comprising: first and second memory units having bit lines, transistors for selection, sub-memory units composed of memory cells, and plate lines shared between the sub-memory units, wherein the fir... | 02/27/2007 |
| 7173842 | Metal heater for in situ heating and crystallization of ferroelectric polymer memory film An embodiment of the invention provides an on-chip heating system to both initially anneal and revive cycle-fatigued polymer ferroelectric materials utilized in memory devices. By heating the polymer ferroelectric material above its Curie temperature, the polymer fe... | 02/06/2007 |
| 7173843 | Serial diode cell and nonvolatile memory device using the same A nonvolatile memory device features a serial diode cell as a cross-point cell using a nonvolatile ferroelectric capacitor and a serial diode chain. The serial diode cell comprises a ferroelectric capacitor and a serial diode switch. The ferroelectric capacitor, loc... | 02/06/2007 |
| 7170770 | Nonvolatile ferroelectric perpendicular electrode cell, FeRAM having the cell and method for manufacturing the cell A nonvolatile ferroelectric perpendicular electrode cell comprises a ferroelectric capacitor and a serial PN diode switch. The ferroelectric capacitor includes a word line perpendicular electrode as a first electrode and a storage perpendicular electrode as a second... | 01/30/2007 |
| 7164594 | Nonvolatile ferroelectric memory device A nonvolatile ferroelectric memory device features a multi-bit serial cell structure where read bit lines and write bit lines are divided to control read/write paths individually, thereby improving a transmission operation of serial data. In the nonvolatile ferroele... | 01/16/2007 |
| 7154766 | Ferroelectric memory An aspect of the present invention provides a ferroelectric memory comprising a cell block having a plurality of unit cells connected in series, one end of the cell block being connected to a plate line and the other end of the cell block being connected to a bit li... | 12/26/2006 |
| 7151257 | Tailoring domain engineered structures in ferroelectric materials Scanning probe apparatus, comprising: a) a tip-electrode which is coupled to be maintained at a first potential; b) a counter-electrode which is positioned in proximity with the tip electrode and which is coupled t... | 12/19/2006 |
| 7142445 | Ferroelectric memory device, method of driving the same, and driver circuit A ferroelectric memory device preventing an imprint and including a plurality of wordlines, a plurality of bitlines, a plurality of ferroelectric memory cells, a wordline driver which drives the wordlines, and a bitline driver which drives the bitlines. The wordline... | 11/28/2006 |
| 7130208 | Ferroelectric-type nonvolatile semiconductor memory A ferroelectric-type nonvolatile semiconductor memory comprising a plurality of bit lines and a plurality of memory cells, each memory cell comprising a first electrode, a ferroelectric layer formed at least on said first electrode... | 10/31/2006 |
| 7126840 | Ferroelectric memory device and electronic apparatus A ferroelectric memory device that has a first bit line and a first plate line includes a first ferroelectric capacitor group having a plurality of ferroelectric capacitors coupled in series and in a ring shape. A switching means switches whether a ferroelectric cap... | 10/24/2006 |
| 7123501 | Semiconductor memory device using ferroelectric capacitor, and semiconductor device with the same A semiconductor memory device includes a memory cell section having at least one memory cell using a cell transistor and a ferroelectric capacitor to store data. A sense amplifier is connected to the memory cell through a bit line. The device further includes an err... | 10/17/2006 |
| 7120042 | Ferroelectric memory device having test memory cell A ferroelectric memory device includes a bit line pair, a plurality of memory cells which include one transistor and one ferroelectric capacitor, and a plurality of judgement memory cells which include two transistors and two ferroelectric capacitors. Each of the me... | 10/10/2006 |
