Class 365/55 - Magnetic

Subclass of Class 365 - Static information storage and retrieval
Definition: Subject matter wherein the storage device is magnetic.
No. of patents: 70
Last issue date: 09/30/2008

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Number	Title	Issue Date
7430135	Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having one or more spin diffusion layers to diffuse the electron spins outside the MTJ or spin valve structure to reduce the spin transfer switching current...	09/30/2008
7414908	Magnetic memory device A Magnetic Random Access Memory (MRAM), in which very little current flows through MTJ elements and very little voltage is applied across them, the MRAM being provided with sense-amplifiers capable of amplifying the potential difference between their corresponding p...	08/19/2008
7391637	Semiconductor memory device with high permeability composite films to reduce noise in high speed interconnects A memory device is provided with a structure for improved transmission line operation on integrated circuits. The structure for transmission line operation includes a first layer of electrically conductive material on a substrate. A first layer of insulating materia...	06/24/2008
7378698	Magnetic tunnel junction and memory device including the same A magnetic tunnel junction device includes a magnetically programmable free magnetic layer. The free magnetic layer includes a lamination of at least two ferromagnetic layers and at least one intermediate layer interposed between the at least two ferromagnetic layer...	05/27/2008
7355883	Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory A magnetoresistance effect element includes a first ferromagnetic layer (1), insulating layer (3) overlying the first ferromagnetic layer, and second ferromagnetic layer (2) overlying the insulating layer. The insulating layer has formed a throu...	04/08/2008
7349235	Non-volatile memory device A non-volatile memory device according to one embodiment includes a plurality of memory cells each comprising a magneto resistive element and a selection transistor, where the memory cells are arranged into a two dimensional array. A first interconnect line extends ...	03/25/2008
7338299	Surface mounted electronic component An exemplary surface mounted electronic component has block body including a bottom soldering surface, a top surface and a peripheral wall having a first peripheral wall portion and a second peripheral wall portion. The bottom soldering surface defines a first solde...	03/04/2008
7295465	Thin film magnetic memory device reducing a charging time of a data line in a data read operation During data reading, a sense enable signal is activated to start charging of a data line prior to formation of a current path including the data line and a selected memory cell in accordance with row and column selecting operations. Charging of the data line is comp...	11/13/2007
7283384	Magnetic memory array architecture An MRAM device is provided which includes an array of magnetic elements, a plurality of conductive lines configured to set magnetization states of the magnetic elements and circuitry configured to vary current applications along one or more of the conductive lines. ...	10/16/2007
7228617	Method for fabricating a GMR read head portion of a magnetic head The GMR read head includes a GMR read sensor and a longitudinal bias (LB) stack in a read region, and the GMR read sensor, the LB stack and a first conductor layer in two overlay regions. In its fabrication process, the GMR read sensor, the LB stack and the first co...	06/12/2007
7180770	Series diode thermally assisted MRAM An information storage device is provided. The information storage device may be a magnetic random access memory (MRAM) device including a resistive cross point array of spin dependent tunneling (SDT) junctions or magnetic memory elements, with word lines extending ...	02/20/2007
7152138	System on a chip having a non-volatile imperfect memory A system-on-a-chip is described herein. The system-on-a-chip includes a microprocessor, a non-volatile imperfect semiconductor memory device and a memory controller. The memory controller is configured to transfer device data between the microprocessor and the non-v...	12/19/2006
7123498	Non-volatile memory device MRAM has read word lines WLR and write word line WLW extending in the y direction, write/read bit line BLW/R and write bit line BLW extending in the x direction, and the memory cells MC disposed at the points of the intersection of these lines. The memory MC include...	10/17/2006
7123507	Using permanent magnets in MRAM to assist write operation A method, information processing system and computer readable medium for transferring data between applications on a computer is disclosed. The method includes selecting data from a first application and selecting a copy-to command for copying the data selected from...	10/17/2006
7109539	Multiple-bit magnetic random access memory cell employing adiabatic switching A multiple-bit memory cell for use in a magnetic random access memory circuit includes a first adiabatic switching storage element having a first anisotropy axis associated therewith and a second adiabatic switching storage element having a second anisotropy axis as...	09/19/2006
7099184	Magnetic random access memory An improved magnetic random access memory (MRAM) has two sets of signal lines where each set is substantially perpendicular to the other, and memory cells located at the intersections of the signal lines. Each memory cell has a magneto-resistant element containing a...	08/29/2006
7075807	Magnetic memory with static magnetic offset field A magnetoresistive or magnetic memory element and a magnetic random access memory having one or more magnetic memory elements. The memory element includes a magnetic tunnel junction including first and a second magnetic layers. The first magnetic layer having a free...	07/11/2006
7075818	Magnetic random access memory with stacked memory layers having access lines for writing and reading A multiple-memory-layer magnetic random access memory (MRAM) has multiple memory layers arranged as pairs and stacked on a substrate. The first memory layer in the pair comprises a plurality of rows of memory cells located between electrically conductive access line...	07/11/2006
7027319	Retrieving data stored in a magnetic integrated memory Methods and apparatuses are disclosed for retrieving data stored in a magnetic integrated memory. In one embodiment, the method includes applying a perturbing hard-axis magnetic field to a magnetic element in a magnetic integrated memory and detecting a change in an...	04/11/2006
7027324	Method and system for providing common read and write word lines for a segmented word line MRAM array A method and system for providing a magnetic memory including magnetic memory cells associated with a word line segment is disclosed. The magnetic memory cell includes a magnetic storage device and an isolation device. The isolation device is coupled to the magnetic...	04/11/2006
7020004	Double density MRAM with planar processing The semiconductor industry seeks to replace traditional volatile memory devices with improved non-volatile memory devices. The increased demand for a significantly advanced, efficient, and non-volatile data retention technique has driven the development of integrate...	03/28/2006
7002839	Magnetic ring unit and magnetic memory device The present invention relates to a magnetic ring unit and a magnetic memory device; an object of the invention is to control the direction of rotation of the magnetic flux freely and with high reproducibility in a simple structure without using a thermal process suc...	02/21/2006
6977839	Magnetic memory storage device This invention provides a probe based magnetic memory storage device. In a particular embodiment, magnetic memory cells are provided in an array. Each cell provides a magnetic data layer and a conductor. At least one movable probe having a tip characterized by a con...	12/20/2005
6961262	Memory cell isolation Device and method for memory cell isolation. The memory cell includes a resistive component, such as a magnetic random access memory (MRAM) cell, and an isolation component, such as a four-layer diode. The memory cell may be included in a memory array. The method in...	11/01/2005
6954375	Magnetic storage element, recording method using the same, and magnetic storage device A magnetic storage element and a recording method using the same capable of ensuring correct information recording without causing erroneous writing are proposed. A magnetic storage device having the magnetic storage elements incorporated therein, and being capable ...	10/11/2005
6943040	Magnetic random access memory designs with controlled magnetic switching mechanism by magnetostatic coupling A magnetic tunneling junction (MTJ) memory cell for a magnetic random access memory (MRAM) array is formed as a chain of magnetostatically coupled segments. The segments can be circular, elliptical, lozenge shaped or shaped in other geometrical forms. Unlike the iso...	09/13/2005
6940750	Magnetic memory, magnetic memory array, method for fabricating a magnetic memory, method for recording in a magnetic memory and method for reading out from a magnetic memory A magnetic memory includes a magnetic substance composed of a disc-shaped first magnetic layer and a ring-shaped second magnetic layer which is formed on the first magnetic layer. ...	09/06/2005
6939722	Method of forming magnetic memory A method of forming a magnetic memory, includes, forming a first magnetic film over a substrate, forming a second magnetic film on the first magnetic film, forming a conductive film on second magnetic film, and forming a resist pattern on the conductive film. Then, ...	09/06/2005
6940748	Stacked 1T-nMTJ MRAM structure This invention relates to MRAM technology and new variations on MRAM array architecture to incorporate certain advantages from both cross-point and 1T-1MTJ architectures. The fast read-time and higher signal-to-noise ratio of the 1T-1MTJ architecture and the higher ...	09/06/2005
6922355	Thin film magnetic memory device capable of conducting stable data read and write operations A tunnel magnetic resistive element forming a magnetic memory cell includes a fixed magnetic layer having a fixed magnetic field of a fixed direction, a free magnetic layer magnetized by an applied magnetic field, and a tunnel barrier that is an insulator film provi...	07/26/2005
6914806	Magnetic memory device There is provided a MRAM capable of reading at any timing information of memory cells at different addresses connected to the same bit line. Specifically, a memory cell of an address (AD00) has MOS transistors (Q1, Q2) connected in series and a ...	07/05/2005
6914805	Method for building a magnetic keeper or flux concentrator used for writing magnetic bits on a MRAM device An MRAM device comprising an array of MRAM elements, with each element having an MRAM bit influenced by a magnetic field from a current flowing through a conductor, also includes a magnetic keeper formed adjacent the conductor to advantageously alter the magnetic fi...	07/05/2005
6909633	MRAM architecture with a flux closed data storage layer A method and system for providing and using a magnetic memory are disclosed. The method and system include providing a plurality of magnetic memory cells and providing at least one magnetic write line coupled with the plurality of magnetic memory cells. Each of the ...	06/21/2005
6885582	Magnetic memory storage device This invention provides a probe based magnetic memory storage device. In a particular embodiment, magnetic memory cells are provided in an array. Each cell provides a magnetic data layer and a conductor. At least one movable probe having a tip characterized by a con...	04/26/2005
6885073	Method and apparatus providing MRAM devices with fine tuned offset A MRAM cell structure is disclosed as containing an additional ferromagnetic layer and coupling layer between the third ferromagnetic layer and the anti-ferromagnetic layer. The additional ferromagnetic layer affects the demagnetization field to which the free layer...	04/26/2005
6882566	Stacked 1T-nMTJ MRAM structure This invention relates to MRAM technology and new variations on MRAM array architecture to incorporate certain advantages from both cross-point and 1T-1MTJ architectures. The fast read-time and higher signal-to-noise ratio of the 1T-1MTJ architecture and the higher ...	04/19/2005
6867988	Magnetic logic elements A magnetic logic element for a logic device is described formed by at least one conduit capable of sustaining and propagating a magnetic soliton, the conduit being adapted by the provision of nodes and/or directional changes giving rise to discontinuities in soliton...	03/15/2005
6829158	Magnetoresistive level generator and method A magnetoresistive multi-level generator including a first series circuit with a first magnetoresistive element having a resistance equal to Rmax connected in series with n first magnetoresistive elements each having a resistance equal to Rmin. Where n is equal to a...	12/07/2004
6826076	Non-volatile memory device MRAM has read word lines WLR and write word line WLW extending in the y direction, write/read bit line BLW/R and write bit line BLW extending in the x direction, and the memory cells MC disposed at the points of the intersection of these lines. The memory MC include...	11/30/2004
6807089	Method for operating an MRAM semiconductor memory configuration In a method for operating an MRAM semiconductor memory configuration, for the purpose of reading an item of stored information, reversible magnetic changes are made to the TMR cell and a current that is momentarily altered as a result is compared with the original r...	10/19/2004

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Class 365/55 - Magnetic