Famous Patents
The ice cream cone was invented at the St. Louis Worlds Fair by Ernest Hamwi in 1904. His waffle booth was next to an ice cream vendor who ran short of dishes. Hamwi rolled a waffle to hold ice cream and the cone was born.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8098507 | Hierarchical cross-point array of non-volatile memory A method and apparatus for reading data from a non-volatile memory cell. In some embodiments, a cross-point array of non-volatile memory cells is arranged into rows and columns. A selection circuit is provided that is capable of activating the first block of memory ... | 01/17/2012 |
| 7440303 | Semiconductor memory device A semiconductor memory device includes resistance memory elements that are coupled to selection transistors addressed by word lines and bit lines. The memory elements are read by read/write lines arranged parallel to the word lines. Two successive memory elements al... | 10/21/2008 |
| 7423902 | Storage device and semiconductor apparatus A storage device includes memory cells disposed in a matrix. The memory cells each include a storage element whose resistance changes from a higher state to a lower state when an electric signal of a first threshold level or higher is applied and whose resistance ch... | 09/09/2008 |
| 7349235 | Non-volatile memory device A non-volatile memory device according to one embodiment includes a plurality of memory cells each comprising a magneto resistive element and a selection transistor, where the memory cells are arranged into a two dimensional array. A first interconnect line extends ... | 03/25/2008 |
| 7227774 | MRAM integrated circuits, MRAM circuits, and systems for testing MRAM integrated circuits An integrated circuit includes operational circuitry; a sensor configured to sense an environmental parameter; and adjustment circuitry coupled to the sensor and to the operational circuitry and configured to affect the operational circuitry to at least partially co... | 06/05/2007 |
| 7112354 | Electron spin mechanisms for inducing magnetic-polarization reversal An apparatus includes a low magnetic-coercivity layer of material (LMC layer) having a majority electron-spin-polarization (M-ESP), an energy-gap coupled with the LMC layer, wherein a flow of spin-polarized electrons having an electron-spin-polarization anti-paralle... | 09/26/2006 |
| 7109539 | Multiple-bit magnetic random access memory cell employing adiabatic switching A multiple-bit memory cell for use in a magnetic random access memory circuit includes a first adiabatic switching storage element having a first anisotropy axis associated therewith and a second adiabatic switching storage element having a second anisotropy axis as... | 09/19/2006 |
| 7075807 | Magnetic memory with static magnetic offset field A magnetoresistive or magnetic memory element and a magnetic random access memory having one or more magnetic memory elements. The memory element includes a magnetic tunnel junction including first and a second magnetic layers. The first magnetic layer having a free... | 07/11/2006 |
| 7035136 | Nonvolatile magnetic memory device and method of writing data into tunnel magnetoresistance device in nonvolatile magnetic memory device A nonvolatile magnetic memory device having a nonvolatile magnetic memory array comprising write-in word line(s), bit lines and tunnel magnetoresistance devices, wherein when data is written into the tunnel magnetoresistance device, a current I(m)RWL is p... | 04/25/2006 |
| 7029926 | Double density MRAM with planar processing The semiconductor industry seeks to replace traditional volatile memory devices with improved non-volatile memory devices. The increased demand for a significantly advanced, efficient, and non-volatile data retention technique has driven the development of integrate... | 04/18/2006 |
| 7027319 | Retrieving data stored in a magnetic integrated memory Methods and apparatuses are disclosed for retrieving data stored in a magnetic integrated memory. In one embodiment, the method includes applying a perturbing hard-axis magnetic field to a magnetic element in a magnetic integrated memory and detecting a change in an... | 04/11/2006 |
| 7020004 | Double density MRAM with planar processing The semiconductor industry seeks to replace traditional volatile memory devices with improved non-volatile memory devices. The increased demand for a significantly advanced, efficient, and non-volatile data retention technique has driven the development of integrate... | 03/28/2006 |
| 6992922 | Cross point memory array exhibiting a characteristic hysteresis Providing a cross point memory array with memory plugs exhibiting a characteristic hysteresis. The memory plugs exhibit a hysteresis that, in the low resistive state, the first write threshold voltage is the point above which any voltages applied across the memory p... | 01/31/2006 |
| 6954375 | Magnetic storage element, recording method using the same, and magnetic storage device A magnetic storage element and a recording method using the same capable of ensuring correct information recording without causing erroneous writing are proposed. A magnetic storage device having the magnetic storage elements incorporated therein, and being capable ... | 10/11/2005 |
| 6940748 | Stacked 1T-nMTJ MRAM structure This invention relates to MRAM technology and new variations on MRAM array architecture to incorporate certain advantages from both cross-point and 1T-1MTJ architectures. The fast read-time and higher signal-to-noise ratio of the 1T-1MTJ architecture and the higher ... | 09/06/2005 |
| 6940750 | Magnetic memory, magnetic memory array, method for fabricating a magnetic memory, method for recording in a magnetic memory and method for reading out from a magnetic memory A magnetic memory includes a magnetic substance composed of a disc-shaped first magnetic layer and a ring-shaped second magnetic layer which is formed on the first magnetic layer. ... | 09/06/2005 |
| 6912154 | Magnetic random access memory In the first read operation, a read current is supplied to TMR elements connected in parallel in one column or one block to detect initial data. Trial data is then written in a selected memory cell. At the same time of or in parallel with writing of the trial data, ... | 06/28/2005 |
| 6906948 | Magnetic random access memory In the first read operation, a read current is supplied to TMR elements connected in parallel in one column or one block to detect initial data. Trial data is then written in a selected memory cell. At the same time of or in parallel with writing of the trial data, ... | 06/14/2005 |
| 6870762 | Electron spin mechanisms for inducing magnetic-polarization reversal An apparatus includes a low magnetic-coercivity layer of material (LMC layer) having a majority electron-spin-polarization (M-ESP), an energy-gap coupled with the LMC layer, wherein a flow of spin-polarized electrons having an electron-spin-polarization anti-paralle... | 03/22/2005 |
| 6850429 | Cross point memory array with memory plugs exhibiting a characteristic hysteresis Providing a cross point, memory array with memory plugs exhibiting a characteristic hysteresis. The memory plugs exhibit a hysteresis that, in the low resistive state, the first write threshold voltage is the point above which any voltages applied across the memory ... | 02/01/2005 |
| 6804144 | Magnetic random access memory In the first read operation, a read current is supplied to TMR elements connected in parallel in one column or one block to detect initial data. Trial data is then written in a selected memory cell. At the same time of or in parallel with writing of the trial data, ... | 10/12/2004 |
| 6798705 | Noise resistant small signal sensing circuit for a memory device Apparatus and method for data sensing circuitry that uses averaging to sense small differences in signal levels representing data states. The apparatus periodically switches the coupling of input terminals and output terminals of an integrator circuit from a first c... | 09/28/2004 |
| 6795339 | Thin film magnetic memory device having communication function, and distribution management system and manufacturing step management system each using thereof A thin film magnetic memory device includes an antenna section transmitting and receiving a radio wave to an from an outside of the thin film magnetic memory device. An inductance wiring constituting the antenna section has a metal wiring, and a magnetic film formed... | 09/21/2004 |
| 6741496 | Electron spin mechanisms for inducing magnetic-polarization reversal An apparatus includes a low magnetic-coercivity layer of material (LMC layer) having a majority electron-spin-polarization (M-ESP), an energy-gap coupled with the LMC layer, wherein a flow of spin-polarized electrons having an electron-spin-polarization anti-paralle... | 05/25/2004 |
| 6629193 | Solid-state information storage device The present disclosure relates to an information storage device. The storage device comprises a connector for interfacing the storage device with a host computing device and at least one solid-state memory device contained within the storage device, the m... | 09/30/2003 |
| 6297983 | Reference layer structure in a magnetic storage cell A magnetic storage cell includes an active layer and a reference layer which is structured to minimize disruptions to magnetization in its active layer. The reference layer is structured so that a pair of its opposing edges overlap a pair of corresponding... | 10/02/2001 |
| 5504699 | Nonvolatile magnetic analog memory A nonvolatile analog magnetic memory includes a substrate comprised of saturable and desaturable magnetic domains at distinguishable fixed locations, a bi-directional drive circuit to selectively write data to the magnetic domains by first saturating a se... | 04/02/1996 |
| 5477482 | Ultra high density, non-volatile ferromagnetic random access memory A random access memory element utilizes giant magnetoresistance. The element includes at least one pair of ferromagnetic layers sandwiching a nonmagnetic conductive layer. At least one of the two ferromagnetic layers has a magnetic moment oriented within ... | 12/19/1995 |
| 5375082 | Integrated, nonvolatile, high-speed analog random access memory This invention provides an integrated, non-volatile, high-speed random access memory. A magnetically switchable ferromagnetic or ferrimagnetic layer is sandwiched between an electrical conductor which provides the ability to magnetize the magnetically swi... | 12/20/1994 |
