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| Number | Title | Issue Date |
| 7372757 | Magnetic memory device with moving magnetic domain walls A magnetic memory device includes a plurality of first metal lines arranged in parallel on a substrate and including a plurality of magnetic domains with variable magnetization directions. A plurality of second metal lines is arranged on the substrate perpendicular ... | 05/13/2008 |
| 7209382 | Magnetic random access memory In a magnetic random access memory (MRAM), setting data which determines the supply/cutoff timing, magnitude, and temporal change (current waveform) of a write word/bit line current is registered in a setting circuit. A write current waveform control circuit generat... | 04/24/2007 |
| 7145796 | Semiconductor integrated circuit device A semiconductor integrated circuit device includes a magneto-resistive effect element and a plug. The magneto-resistive effect element includes a first magnetic layer whose magnetization direction is fixed and a second magnetic layer whose magnetization direction ca... | 12/05/2006 |
| 7068530 | Magnetoresistive effect element and memory device using the same One block SB serving as a fundamental unit constituting a data reading circuit is constituted by four memory cells MS1 to MS4 connected electrically in series, four FETs S1 to S4 connected in parallel with the memory cells MS1 to M... | 06/27/2006 |
| 7054185 | Optimized MRAM current sources A word current source (445) for a magnetoresistive random access memory circuit (420) includes an n-channel transistor (430) including a gate, a source and a drain, where the source is coupled to a supply ground, and the drain is coupled to the ... | 05/30/2006 |
| 6826321 | Magnetic switching of charge separation lifetimes in artificial photosynthetic reaction centers Excitation of a triad artificial photosynthetic reaction center consisting of a porphyrin (P) convalently linked to a fullerene electron acceptor (C60) and a carotenoid secondary donor (C) leads to the formation of a long-lived C+-P-C60 | 11/30/2004 |
| 6762952 | Minimizing errors in a magnetoresistive solid-state storage device Exemplar embodiments are disclosed which allow errors in a magnetoresistive solid-state storage device, such as a magnetic random access memory (MRAM) device, to be minimized. An illustrative method includes the steps of identifying cells in the device which have a ... | 07/13/2004 |
| 6683807 | Thin film magnetic memory device for programming required information with an element similar to a memory cell and information programming method A program unit includes two program cells having an electric resistance varying according to a magnetization direction thereof. These program cells are magnetized in the same direction in initial state, that is, non-program state. In program state, the ma... | 01/27/2004 |
| 6649953 | Magnetic random access memory having a transistor of vertical structure with writing line formed on an upper portion of the magnetic tunnel junction cell A magnetic random access memory (MRAM) having a vertical structure transistor has the characteristics of faster access time than SRAM, high density as with DRAM, and non-volatility like a flash memory device. The MRAM has a vertical structure transistor, ... | 11/18/2003 |
| 6643213 | Write pulse circuit for a magnetic memory A magnetic memory includes a memory cell and a conductor wherein the memory cell is crossed by the conductor. A write pulse generator is coupled to the conductor and is configured to provide a discharge current to the conductor during a write operation of... | 11/04/2003 |
| 5748523 | Integrated circuit magnetic memory element having a magnetizable member and at least two conductive winding Integrated circuit memory elements are fabricated by disposing a first layer of electrically conductive material on the surface of an electrically insulating substrate. The first layer of electrically conductive material is formed into a first predetermin... | 05/05/1998 |
| 5654566 | Magnetic spin injected field effect transistor and method of operation A new hybrid magnetic spin injected-FET structure can be used as a memory element for the nonvolatile storage of digital information, as well as in other environments, including for example logic applications for performing digital combinational tasks, or... | 08/05/1997 |
| 5602791 | Memory material and method of its manufacture A composition of materials having ferromagnetic, piezoelectric, and electro-optical properties is disclosed. In the preferred embodiment, the composition of materials comprises a first layer of Pb(1-x-y) Cdx Siy, a second ... | 02/11/1997 |
| 5565695 | Magnetic spin transistor hybrid circuit element A new nonvolatile hybrid memory cell is provided. The cell is comprised of a magnetic spin transistor storage element and one or two FET isolation elements. The magnetic spin transistor stores data indefinitely while drawing zero quiescent power. The FET ... | 10/15/1996 |
| 4463449 | Field effect transistor core memory switching system and method A core memory system includes a plurality of word lines strung through a core memory array and a plurality of field effect transistors coupling respective ones of the word select lines to an address decoding circuit. In one embodiment of the invention, th... | 07/31/1984 |
