"It is my heart-warmed and world-embracing Christmas hope and aspiration that all of us, the high, the low, the rich, the poor, the admired, the despised, the loved, the hated, the civilized, the savage (every man and brother of us all throughout the whole earth), may eventually be gathered together in a heaven of everlasting rest and peace and bliss, except the inventor of the telephone. "
Mark Twain ; Christmas greetings, 1890
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| Number | Title | Issue Date |
| 7852705 | Method of and circuit for configuring a plurality of memory elements A method of configuring a plurality of memory elements having selectable dimensions, the method comprising the steps of selecting a width of a data word to be output by a circuit having the plurality of memory elements; selecting a width for memory locations of the ... | 12/14/2010 |
| 7715271 | Using dedicated read output path to reduce unregistered read access time for a FPGA embedded memory A memory unit includes width decoding logic enabling data to be accessed in a memory array at different data widths. To improve memory access speed, the memory unit also includes dedicated read output paths for accessing data at the full data width of the memory arr... | 05/11/2010 |
| 7414916 | Using dedicated read output path to reduce unregistered read access time for FPGA embedded memory A memory unit includes width decoding logic enabling data to be accessed in a memory array at different data widths. To improve memory access speed, the memory unit also includes dedicated read output paths for accessing data at the full data width of the memory arr... | 08/19/2008 |
| 7388802 | Memory protected against attacks by error injection in memory cells selection signals A memory comprises memory cells arranged in a memory array, and an address decoder to apply memory cells selection signals to the memory array according to a read address applied to the memory. The memory comprises an address reconstruction circuit which reconstruct... | 06/17/2008 |
| 7362909 | Coding device and method and decoding device and method The present invention makes it possible to effectively encode/decode position information of leaves or nodes in tree-structured information by using a less amount of bits. The coding device according to the present invention includes a branching layer discriminating... | 04/22/2008 |
| 7349267 | Semiconductor memory device In a memory cell array, source lines are provided so that each of the source lines is connected to ones of memory cells which belong to adjacent two rows and a plurality of source bias control circuits for supplying a source bias potential which is higher than a gro... | 03/25/2008 |
| 7336547 | Memory device having conditioning output data A memory device has a memory array for storing memory data, a conditioning data storage unit for storing conditioning data, and data lines for transferring data. During a memory operation, the memory device transfers both of the condition data and the memory data to... | 02/26/2008 |
| 7266036 | Semiconductor memory device A semiconductor memory device is provided with a plurality of memory blocks including a plurality of word lines and a plurality of bit line pairs intersecting the individual word lines, a plurality of memory cells provided at each of intersections where the individu... | 09/04/2007 |
| 7209376 | Stacked semiconductor memory device A three-dimensional semiconductor memory device having the object of decreasing the interconnection capacitance that necessitates electrical charge and discharge during data transfer and thus decreasing power consumption is provided with: a plurality of memory cell ... | 04/24/2007 |
| 7106639 | Defect management enabled PIRM and method A defect management enabled PIRM including a data storage medium providing a plurality of cross point data storage arrays. Each array provides a plurality of memory cells. The arrays are allocated into separate super arrays, the separate super arrays virtually align... | 09/12/2006 |
| 7003622 | Semiconductor memory A semiconductor memory includes a redundant RAM disposed independently of at least one regular RAM, the redundant RAM having redundant memory elements by which defective memory elements of the regular RAM can be replaced, and a control block for selecting either at ... | 02/21/2006 |
| 6996662 | Content addressable memory array having flexible priority support A method for processing addresses having variable prefix lengths, including (1) applying an input address to a plurality of CAM blocks; (2) assigning different sets of CAM blocks to store prefixes of different lengths; (3) generating a hit signal and an index signal... | 02/07/2006 |
| 6982920 | Flash array implementation with local and global bit lines A flash memory device that can detect short circuits in local and global bit lines. The flash memory device has a plurality of sets of adjacent local bit lines, a plurality of global bit lines and a plurality of select transistors. Each select transistor has a contr... | 01/03/2006 |
| 6975553 | Nonaligned access to random access memory Memory apparatus including a byte-bank organized in N rows and 8 columns, having a capacity of log2(N) bytes, a log2(N) bit address bus operative to address the byte-bank, an address offset bus operative to generate offsets (e.g., one-bit offse... | 12/13/2005 |
| 6958745 | Display device, method for driving the same, and portable terminal apparatus using the same A selection-addressing-type liquid crystal display selectively addresses a signal line of a pixel unit using groups of three selectors of a selector circuit in a time-division manner. A level converter level shifts selector pulses having a voltage swing correspondin... | 10/25/2005 |
| 6940780 | Flash array implementation with local and global bit lines A flash memory device that can detect short circuits in local and global bit lines. The flash memory device has a plurality of sets of adjacent local bit lines, a plurality of global bit lines and a plurality of select transistors. Each select transistor has a contr... | 09/06/2005 |
| 6909636 | Flash array implementation with local and global bit lines A flash memory device that can detect short circuits in local and global bit lines. The flash memory device has a plurality of sets of adjacent local bit lines, a plurality of global bit lines and a plurality of select transistors. Each select transistor has a contr... | 06/21/2005 |
| 6862243 | Flash array implementation with local and global bit lines A flash memory device that can detect short circuits in local and global bit lines. The flash memory device has a plurality of sets of adjacent local bit lines, a plurality of global bit lines and a plurality of select transistors. Each select transistor has a contr... | 03/01/2005 |
| 6839266 | Memory module with offset data lines and bit line swizzle configuration A memory module includes an array of N memory devices, each memory device having M data pins, where N is greater than M, and M and N are positive integers; and N bit lines traversing the array of N memory devices, such that each one of the N bit lines is connected t... | 01/04/2005 |
| 6768663 | Semiconductor device array having dense memory cell array and hierarchical bit line scheme A semiconductor device architecture (200) is disclosed. Like unit circuits (202), arranged in rows and columns, are coupled to lower conductive segments (204a-204h). The lower conductive segments (204a-204 | 07/27/2004 |
| 6667894 | Acquisition process by analog signal sampling, and an acquisition system to implement such a process An acquisition process for signal sampling includes high-speed analog signal sampling, storing the samples of the analog signal in a matrix of memory cells, and re-reading the samples from the cells at low speed. Two identical memory devices are provided ... | 12/23/2003 |
| 6636454 | Low-power consumption semiconductor memory device A memory cell unit includes a first storage element and a second storage element for storing complementary data with each other. In a selected state, the first and second storage elements are connected to complementary bit lines, respectively at a time. I... | 10/21/2003 |
| 6567340 | Memory storage cell based array of counters A multi-counter based system having a counter array. Each counter of the array having a memory cell. The system also includes an address decoder coupled to the counter array to select at least one of the memory cells within the counter array and read/writ... | 05/20/2003 |
| 6507534 | Column decoder circuit for page reading of a semiconductor memory A column decoder circuit for page reading of a semiconductor memory includes a first level decoder stage, a second level decoder stage, and a plurality of bit selection stages, each comprising a plurality of selection branches; wherein each selection bran... | 01/14/2003 |
| 6473339 | Redundancy architecture for an interleaved memory A redundancy architecture for a memory includes an array of memory cells divided into at least a pair of semi-arrays that are singularly addressable. Each semi-array is organized into rows and columns. The redundancy architecture includes a number of pack... | 10/29/2002 |
| 6434433 | External components for a microprocessor system for control of plural control elements and operating method The external intelligent component (3) connected with a microprocessor system (2) is described for essentially automatic control of a control element (1) without burdening the microprocessor system operation. The control parameters for the control element... | 08/13/2002 |
| 6400597 | Semiconductor memory device The number of apparently independently operating memory sets can be changed by providing the same number of address setting circuits as that of memory cell arrays. Since the number of mounted address setting circuits increases compared with a case where t... | 06/04/2002 |
| 6373770 | Integrated circuit memory devices with configurable block decoder circuits A memory device includes a memory array and a configurable decoder circuit operatively associated with the memory array and configurable to one of a first state or a second state. In the first state, the configurable decoder circuit is operative, responsi... | 04/16/2002 |
| 6363026 | Address generating device for use in multi-stage channel interleaver/deinterleaver An address generating device for addressing data stored in an interleaver memory in B rows and F columns, where F is not 2k for a positive integer k. A row counter being responsive to B clock pulses, outputs carry signal when the row counter co... | 03/26/2002 |
| 6262925 | Semiconductor memory device with improved error correction When a cell of a memory cell array (C0 and C1) located at a position further from the word select line driver is selected, data that is read from the memory cell array (C0, C1) is sent via only sense amplifier circuits (S0, S1) to the output buffer circui... | 07/17/2001 |
| 6212121 | Semiconductor memory device with multiple sub-arrays of different sizes A semiconductor memory device includes a memory cell array divided into a plurality of sub-arrays. The number of memory cells per bit line in at least one of the sub-arrays differs from the number of memory cells per bit line in other sub-arrays. When the... | 04/03/2001 |
| 6192000 | Semiconductor memory device having decreased layout area and method of manufacturing the same A word line driving circuit drives four word lines in response to a signal supplied from a main row decoder through a main word line and in response to a word line driving voltage supplied from a sub-row decoder. When the word line driving circuit is not ... | 02/20/2001 |
| 6115305 | Method and apparatus for testing a video display chip A video chip includes test circuitry for detecting opens and shorts. The circuitry includes a series-connected chain of transistors and a test register. There is a circuit for the column lines and for the row lines. A bit pattern is driven onto the column... | 09/05/2000 |
| 6081474 | Semiconductor memory In a semiconductor memory, four bit line diffused interconnections 1 connected to two bit line terminals D0 and D1 through bank selection transistors BT1 and BT2 are connected to drains of memory cells of four column pairs, respectively, and four bit line... | 06/27/2000 |
| 5963498 | Method for controlling memory address of digital signal processor Disclosed is a method for controlling a memory address of a digital signal processor in which a memory address is independently managed for each for during parallel processing of a plurality of jobs and no program of the same content as others is stored r... | 10/05/1999 |
| 5943693 | Algorithmic array mapping to decrease defect sensitivity of memory devices A method and apparatus for addressing a memory device are described. A first logical address is translated into a first physical address to access a first storage location at a first row and a first column in an array of memory cells. A second logical add... | 08/24/1999 |
| 5930790 | String-match array for substitutional compression A circuit for implementing a substitutional compressor. Comparators compare a current input pixel against a large number of previous pixels, the "history", stored in a series of shift registers. Each register and associated comparator constitutes a cell. ... | 07/27/1999 |
| 5910928 | Memory interface unit, shared memory switch system and associated method A memory interface unit comprising a bus interface unit, a buffer which can store multiple data burst subsets in transit to or from a digital memory, and a switch which includes an externally accessible master data path for the transfer data to or from th... | 06/08/1999 |
| 5732041 | Memory interface unit, shared memory switch system and associated method A memory interface unit comprising a bus interface unit, a buffer which can store multiple data burst subsets in transit to or from a digital memory, and a switch which includes an externally accessible a master data path for the transfer data to or from ... | 03/24/1998 |
| 5612925 | Semiconductor memory device A semiconductor memory device, including a memory cell array having a plurality of memory cells arranged in rows and columns, the memory cells storing data and being selected according to address signals. The device includes a control unit which receives ... | 03/18/1997 |