Did You Know...
...that on Dec. 15, 1836, the Patent Office was completely destroyed by fire? Lost were some 7,000 models, 9,000 drawings, and 230 books plus all records of patent applications and grants.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8189396 | Word line driver in a hierarchical NOR flash memory A memory device of the non-volatile type including a memory array having a plurality of memory cells organized as sectors, each sector having a main word line associated with a plurality of local word lines, each local word line coupled to the main word line by a re... | 05/29/2012 |
| 8184485 | Semiconductor device having coupling elimination circuit A semiconductor device including a plurality of repairable signal lines, the device including a first driver adapted to maintain a first portion of each defective one of the repairable signal lines at a first voltage level, and a second driver adapted to drive a sec... | 05/22/2012 |
| 8184486 | Tunable current driver and operating method thereof A tunable current driver comprising a semiconductor memory device and a selective transistor is provided, in which one of the source/drain pair of the semiconductor memory device is electrically coupled with a lighting device, and one of the source/drain pair of the... | 05/22/2012 |
| 8174901 | Semiconductor integrated circuit device This invention is to reduce the number of memory gate drivers, while lessening the number of times of disturb occurrence in a memory array configuration that implements writing in small byte units. A memory array comprises a plurality of sub-arrays, MG transfers, SL... | 05/08/2012 |
| 8174900 | Wordline voltage transfer apparatus, systems, and methods The apparatus and systems described herein may comprise a plurality of memory cells coupled to a local wordline, and a wordline drive circuit that includes a regulator coupled to a plurality of pass transistors and a string driver. The regulator may comprise a regul... | 05/08/2012 |
| 8159883 | Semiconductor memory device having a block decoder for preventing disturbance from unselected memory blocks A semiconductor memory device can improve electrical properties by prohibiting a leakage current, which flows through a memory cell, in such a way as to turn off a drain select transistor, a source select transistor and a side transistor of an unselected memory cell... | 04/17/2012 |
| 8144520 | Non-volatile memory device and method of reading data in a non-volatile memory device A non-volatile memory device includes a row decoder and a memory cell array. The row decoder generates a read voltage, and first, second and third drive voltages. The memory cell array includes a selected word line receiving the read voltage, a first neighboring wor... | 03/27/2012 |
| 8120968 | High voltage word line driver A word line driver circuit coupled to a memory circuit word line includes pull-up, pull-up clamp, pull-down and pull-down clamp transistors, each having a source, a drain and a gate. For the pull-up transistor, the source is coupled to a first power supply, and the ... | 02/21/2012 |
| 8107299 | Semiconductor memory and method and system for actuating semiconductor memory A semiconductor memory includes a memory cell having a cell transistor and a selection transistor, a control gate line coupled to a gate electrode of the cell transistor, a selection gate line coupled to a gate electrode of the selection transistor, a selection gate... | 01/31/2012 |
| 8098527 | Semiconductor memory device and manufacturing method thereof A semiconductor memory device includes a semiconductor substrate; a memory cell array on the semiconductor substrate, the memory cell array comprising a plurality of memory cells capable of electrically storing data; a sense amplifier configured to detect the data s... | 01/17/2012 |
| 8085598 | Nonvolatile semiconductor memory device A sub-decoder element provided corresponding to each word line is constructed by the same conductive type MOS transistors. The sub-decoder elements are arranged in a plurality of columns such that the layout of active regions for forming the sub-decoder elements is ... | 12/27/2011 |
| 8077523 | Semiconductor memory device with a stacked gate including a charge storage layer and a control gate and method of controlling the same A semiconductor memory device includes a transfer circuit and a control circuit. The transfer circuit which includes a p-type MOS transistor with a source to which is applied a first voltage and an n-type MOS transistor to whose gate the drain of the p-type MOS tran... | 12/13/2011 |
| 8072816 | Memory block reallocation in a flash memory device A non-volatile memory device has the pages of a certain memory block reallocated to other blocks in order to increase decrease disturb and increase reliability. Each of the reallocation blocks that contain the reallocated pages from the desired memory block are coup... | 12/06/2011 |
| 8059470 | Flash memory array with independently erasable sectors In one embodiment, an integrated circuit includes a flash memory array with at least first and second subarrays, or sectors, of memory cells. The subarrays have a set of shared bitlines and separate sets of word lines. A bitline driver circuit is coupled to the set ... | 11/15/2011 |
| 8059469 | Semiconductor device including driving transistors A semiconductor device includes a driving active region defined in a substrate and at least three driving transistors disposed at the driving active region. The driving transistors share one common source/drain, and each of the driving transistors includes individua... | 11/15/2011 |
| 8050102 | Word line activation in memory devices Memory devices and methods facilitate flexibility in applying differing biasing schemes to word lines. For example, one such memory device can include an architecture capable of partitioning word lines into one of a plurality of address spaces. Each address space ha... | 11/01/2011 |
| 8045395 | Circuits, systems and methods for driving high and low voltages on bit lines in non-volatile memory An integrated circuit bit line driver system includes a plurality of bit line drivers coupled to respective bit lines of an array of non-volatile memory cells. Each of the bit line drivers includes a bias transistor through which an input signal is coupled to the re... | 10/25/2011 |
| 8045394 | Word line driving circuit, semiconductor memory device including the same, and method for testing the semiconductor memory device A semiconductor memory device in accordance with the present invention is able to facilitate detecting whether a word line fails or not by floating the word line. The semiconductor memory device includes a word line driver, and a floating controller. The word line d... | 10/25/2011 |
| 8040736 | Non-volatile memory device, computing system and wordline driving method A nonvolatile memory device including a memory cell; a word line coupled to the memory cell; a drive line; a switch coupled between the word line and the drive line, and configured to electrically connect the word line and the drive line; and a voltage generator cou... | 10/18/2011 |
| 8036043 | Nonvolatile semiconductor device and memory system including the same A nonvolatile semiconductor memory device including a vertical array structure comprised of bit lines and source lines arranged in the same direction as the bit lines, each source lines corresponding to the bit lines and memory cell strings vertically formed between... | 10/11/2011 |
| 8018777 | Flash memory device for adjusting non-selected word line voltage during reading Disclosed is a flash memory device including a memory cell array having memory cells arranged at intersections of word lines and bit lines, such that one bit line is associated with a plurality of memory cells connected in series, a voltage generator configured to g... | 09/13/2011 |
| 8009481 | System and method for bit-line control In one embodiment, a bit-line driver has a first driver having a source terminal coupled to a high-voltage supply bus and a drain terminal coupled to the bit-line, and a second driver having a source terminal coupled to a high-voltage return bus and a drain terminal... | 08/30/2011 |
| 7986561 | Semiconductor memory device A semiconductor memory device comprises memory cells which includes a selection transistor and a memory transistor; selection gate lines coupled to a gate of the selection transistor; control gate lines coupled to the control gate of the memory transistor; source li... | 07/26/2011 |
| 7965561 | Row selector occupying a reduced device area for semiconductor memory devices A memory device having a plurality of memory cells grouped in at least two memory sectors is disclosed. A first decoding circuit operable to receive address codes of the plurality of memory cells and to generate a plurality of decoding and selecting signals in respo... | 06/21/2011 |
| 7952937 | Wordline driver for a non-volatile memory device, a non-volatile memory device and method A wordline driver, for a non-volatile memory device, comprises a wordline driver output, a first power source, adapted to provide an erase level voltage for erasing portions of the non-volatile memory device, a second power source, adapted to provide read and progra... | 05/31/2011 |
| 7934181 | Method and apparatus for improving SRAM cell stability by using boosted word lines The present invention relates to methods and apparatus for improving the stability of static random access memory (SRAM) cells by using boosted word lines. Specifically, a boosted word line voltage (Vdd′) is applied to the word line of a selected SRAM cell, while ... | 04/26/2011 |
| 7920429 | Semiconductor memory device for reducing power consumption A semiconductor memory device which includes: a voltage supplying unit for outputting a power source voltage as a driving source signal during a predetermined time, and then outputting a high voltage as the driving source signal in response to a driving control sign... | 04/05/2011 |
| 7911850 | Method of programming flash memory device Flash memory devices include a memory array having a plurality of NAND strings of EEPROM cells therein. A word line driver is provided to improve programming efficiency. The word line driver is electrically coupled to the memory array by a plurality of word lines. T... | 03/22/2011 |
| 7898869 | Word line voltage generator and flash memory device including the same, and method of generating word line voltage thereof A word line voltage generator that generates a word line voltage, which is selectively changed depending on a temperature, a flash memory device including the word line voltage generator, and a method of generating the word line voltage. The word line voltage genera... | 03/01/2011 |
| 7889567 | Nonvolatile memory device for preventing program disturbance and method of programming the nonvolatile memory device A nonvolatile memory device for preventing program disturbances includes a memory cell array block, a word line driver, and a well bias control unit. The memory cell array block includes at least one cell string having a plurality of memory cells serially connected ... | 02/15/2011 |
| 7889568 | Memory, memory operating method, and memory system A memory includes a plurality of memory cells each of which includes a memory transistor and a selection transistor; a control gate line; a selection gate line; a source line; a bit line; a first driver that sets the control gate line and the selection gate line at ... | 02/15/2011 |
| 7885121 | Resistance change memory device A resistance change memory device including: a cell array having a resistance change type of memory cells disposed at the cross-points of word lines and bit lines, the resistance value of the memory cell being reversibly settable; a word line driver circuit configur... | 02/08/2011 |
| 7872920 | Word line drivers in non-volatile memory device and method having a shared power bank and processor-based systems using same A word line driver system that utilizes a voltage selection circuit to supply one of several voltages to an output node coupled to a plurality of word line control circuits. Each word line control circuit is coupled to a respective word line in an array of non-volat... | 01/18/2011 |
| 7864592 | Nonvolatile semiconductor memory having plural data storage portions for a bit line connected to memory cells Data having three values or more is stored in a memory cell in a nonvolatile manner. A data circuit has a plurality of storage circuits. One of the plurality of storage circuits is a latch circuit. Another one of the plurality of storage circuits is a capacitor. The... | 01/04/2011 |
| 7859909 | Nonvolatile semiconductor memory device A sub-decoder element provided corresponding to each word line is constructed by the same conductive type MOS transistors. The sub-decoder elements are arranged in a plurality of columns such that the layout of active regions for forming the sub-decoder elements is ... | 12/28/2010 |
| 7852682 | Flash memory device and program method of flash memory device using different voltages A flash memory and a program method of the flash memory include applying a pass voltage to word lines to boost a channel voltage, which is discharged to a ground voltage. A program voltage is applied to a selected word line and a local voltage is applied to at least... | 12/14/2010 |
| 7848151 | Circuit to control voltage ramp rate A programming circuit and method to apply a controlled or predetermined voltage pulse for charge transfer to or from the floating gate of a non-volatile memory cell in an incremental manner to control the overall voltage across the gate oxide. Voltage above a transf... | 12/07/2010 |
| 7839694 | Nonvolatile memory devices and data reading methods Methods of reading memory cell data and nonvolatile memory devices, which apply a low voltage to memory cells adjacent to a memory cell from which data may be read are provided. Methods of reading memory cell data of nonvolatile memory device include applying a firs... | 11/23/2010 |
| 7787306 | Nonvolatile semiconductor memories for preventing read disturbance and reading methods thereof A method of reading a flash memory device can include driving a selected word line by applying a selection voltage thereto and driving unselected word lines by applying a first voltage thereto, driving the unselected word lines and first and second selection lines b... | 08/31/2010 |
| 7768837 | Flash memory device with write driver and bit line detecting driving circuits A flash memory device and a method of programming a flash memory device include selecting bit lines connected to program cells of multiple memory cells coupled to a selected word line. The selected bit lines are driven to a bit line program voltage through a write d... | 08/03/2010 |
