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| Number | Title | Issue Date |
| 7324396 | Sense amplifier organization for twin cell memory devices A semiconductor memory device is provided that uses a single wordline to access both storage cells of a so-called twin cell. A memory device comprises a plurality of wordlines and a plurality of bitlines in an array, with a plurality of storage cells at certain inte... | 01/29/2008 |
| 7245524 | Magnetic memory device and write method of magnetic memory device A magnetic memory device includes a first write wiring which runs in a first direction, a second write wiring which runs in a second direction different from the first direction, and a magnetoresistive element which is arranged at an intersection between the first a... | 07/17/2007 |
| 7200033 | MRAM with coil for creating offset field An MRAM memory chip includes a plurality of magnetoresistive memory cells each including a magnetic tunnel junction having first (fixed) and second (free) magnetic regions, where the second magnetic region includes at least two ferromagnetic layers that are antiferr... | 04/03/2007 |
| 7042036 | Magnetic memory using single domain switching by direct current A method for implementing miniaturization of magnetic random access memory (MRAM) and a magnetic memory using single domain switching by direct current are provided. The magnetic memory preferably includes a half-circle or U-shaped architecture with an exchange bias... | 05/09/2006 |
| 6930370 | Memory with conductors between or in communication with storage units A memory includes an array of magnetic memory cells, each magnetic memory cell being adapted to store a bit of information, interconnects in communication with the magnetic memory cells, and conductors in communication with the magnetic memory cells and the intercon... | 08/16/2005 |
| 6927072 | Method of applying cladding material on conductive lines of MRAM devices A method of fabricating a cladding region for use in MRAM devices includes the formation of a conductive bit line proximate to a magnetoresistive memory device. The conductive bit line is immersed in a first bath containing dissolved ions of a first conductive mater... | 08/09/2005 |
| 6865107 | Magnetic memory device A magnetic memory array is described having a plurality of bit cells. Each bit cell includes at least one magnetic layer having free magnetic poles with a corresponding demagnetization field. A magnetic flux absorbing layer is disposed between at least two of the pl... | 03/08/2005 |
| 6614084 | Magnetic materials A memory element comprising nanomagnets having a rotational symmetry selected in order to provide high remanence and a suitable coercivity. There is also a sensor element comprising nanomagnets having a rotational symmetry selected such that they are supe... | 09/02/2003 |
| 6229729 | Magneto resistor sensor with diode short for a non-volatile random access ferromagnetic memory A non-volatile RAM device is disclosed which utilizes a plurality of ferromagnetic bits (8) each surrounded by a write coil (15) for directing the remnant polarity thereof is disclosed. The direction of magnetic remnance in each bit (8) is dictated by the... | 05/08/2001 |
| 5986926 | Identification element and method of manufacturing an identification element The present invention is directed to an identification element comprising a layer of an anisotropic magnetic material exhibiting a preferred axis (x), high permeability and low coercive force (soft magnetic material), which on the application of an extern... | 11/16/1999 |
| 5197025 | Crosstie random access memory element and a process for the fabrication thereof A nonvolatile random access memory is formed by thin permalloy shaped into "wiggle" patterns and magnetized to establish a plurality of memory cells arranged into an array. Magnetic domain walls are formed at apexes of the "wiggle" pattern in each memory ... | 03/23/1993 |
| 5140549 | Inductively sensed magnetic memory A magnetic thin-film memory in a monolithic integrated circuit using inductive sensing of the memory states occurring therein.... | 08/18/1992 |
| 4410963 | Cross-tie propagation using offset serration and cross-tie rocking action An improved magnetic memory system in which binary data are stored as cross-tie, Bloch-line pairs, which are serially propagated downstream along a cross-tie wall and a magnetizable layer by appropriate drive fields. The magnetizable layer is configured i... | 10/18/1983 |
| 4253161 | Generator/shift register/detector for cross-tie wall memory system Disclosed is a cross-tie wall memory system for the generating, propagating and detecting of binary data represented by the presence or absence of cross-tie, Bloch-line pairs along a cross-tie wall in a thin magnetic data track. The system includes a thre... | 02/24/1981 |
| 4253160 | Nondestructive readout, random access cross-tie wall memory system Disclosed is a cross-tie wall memory system for the generating, propagating and detecting of binary data represented by the presence or absence of cross-tie, Bloch-line pairs along a cross-tie wall in a thin magnetic layer. The system includes a three-lev... | 02/24/1981 |
| 4231107 | Serriform strip crosstie memory A magnetic crosstie memory using a plurality of Permalloy thin-film strips of uniform thicknesses having parallel denticulated margins etched to align with the oblong axis of the strip. Each pair of opposite denticles defines a distinct memory cell. Magne... | 10/28/1980 |
| 4208725 | Magneto-resistive detector for cross-tie wall memory system A method of and a detector for magneto-resistively reading out the information that is stored in a cross-tie wall memory system. The detector includes two current conductive elements that are positioned along and across the cross-tie wall in a magnetic fi... | 06/17/1980 |
| 4199819 | Field determined cross-tie memory propagation circuit A symmetric narrow-wide electrical conductor for propagating binary information represented by Bloch line - crosstie pairs along a serriform crosstie thin magnetic film strip. Another conductor is made with alternate segments disposed upon opposite surfac... | 04/22/1980 |
| 4198686 | Counter for cross-tie wall memory system A method of and an apparatus for counting is disclosed. The counter includes a generator of cross-tie, Bloch-line pairs and a shift register of N stages or memory cells along which the cross-tie, Bloch-line pairs are propagated or replicated into a detect... | 04/15/1980 |
| 4192012 | Crosstie memory bit stretcher detector A magnetoresistance detector linearly stretching single bits of binary inmation such as those represented by Bloch line - crosstie pairs, along the major dimension of a thin magnetic film strip such as a serriform crosstie memory. The detector circuit is... | 03/04/1980 |
| 4161789 | Cross-tail sensor for cross-tie memory A method of and an apparatus for reading out the information that is stored in a magnetizable layer that is formed of a thin film in which data are stored as inverted Neel wall sections about associated Bloch-lines along a cross-tie wall. The apparatus ut... | 07/17/1979 |
| 4151606 | Bloch-line memory system An apparatus for and a method of storing binary data in a thin ferromagnetic film strip as the presence or absence of Bloch-lines without the presence of cross-ties. The apparatus utilizes a serrated strip of isotropic magnetic material that is formed in ... | 04/24/1979 |
| 4130888 | Isotropic data track for cross-tie wall memory system A data track formed of a strip of magnetic film having substantially zero uniaxial anisotropy, i.e., isotropic, for a cross-tie wall memory system is disclosed. The data-track-defining-strip of isotropic magnetic film utilizes its shape, i.e., its edge co... | 12/19/1978 |
