Did You Know...
...that power steering was invented by independent inventor Francis W. Davis? As chief engineer in the 1920s of the truck division of the Pierce Arrow Motor Car Company, he saw how hard it was to steer heavy vehicles. So that he would be able to keep the profits from his future invention, Davis left his job, rented a small engineering shop in Waltham, Mass., and developed a hydraulic power steering system that led to power steering.
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| Number | Title | Issue Date |
| 8064249 | Nanowire electromechanical switching device, method of manufacturing the same and electromechanical memory device using the nanowire electromechanical switching device A nanowire electromechanical switching device is constructed with a source electrode and a drain electrode disposed on an insulating substrate and spaced apart from each other, a first nanowire vertically grown on the source electrode and to which a V1 vo... | 11/22/2011 |
| 7969772 | Magnetic mechanical switch A method and apparatus for managing data, particularly in regard to non-volatile memory cells. In some embodiments, at least two actuating conductors are at least partially surrounded by a main ferromagnetic core and an adjacent hard magnet. When current is conducte... | 06/28/2011 |
| 7965547 | Arrangement and method for controlling a micromechanical element The invention concerns an arrangement for controlling a non-volatile memory arrangement for a circuit comprising: a micromechanical element coupled to a substrate; the micromechanical element being responsive to deflection means arranged on the substrate to control ... | 06/21/2011 |
| 7940557 | Non-volatile electromechanical configuration bit array A configuration bit array including a hybrid electromechanical and semiconductor memory cell, and circuitry for addressing and controlling read, write, and erase accesses of the memory. ... | 05/10/2011 |
| 7911831 | Nanotube-on-gate FET structures and applications Under one aspect, non-volatile transistor device includes a source and drain with a channel in between; a gate structure made of a semiconductive or conductive material disposed over an insulator over the channel; a control gate made of a semiconductive or conductiv... | 03/22/2011 |
| 7885103 | Non-volatile electromechanical configuration bit array A configuration bit array including a hybrid electromechanical and semiconductor memory cell, and circuitry for addressing and controlling read, write, and erase accesses of the memory. ... | 02/08/2011 |
| 7821821 | Multibit electro-mechanical device and method of manufacturing the same A multibit electro-mechanical memory device and a method of manufacturing the same include a substrate, a bit line in a first direction on the substrate, a lower word line in a second direction intersecting the first direction, a pad electrode isolated from a sidewa... | 10/26/2010 |
| 7791936 | Multibit electro-mechanical memory device and method of manufacturing the same A multibit electro-mechanical memory device and a method of manufacturing the same include a substrate, a bit line on the substrate; a lower word line and a trap site isolated from the bit line, a pad electrode isolated from a sidewall of the trap site and the lower... | 09/07/2010 |
| 7782662 | Storage device A storage device includes: a wiring including a first conductor with a first conductivity; and first, second and third contacts, each including a second conductor with a second conductivity and contacting the wiring. The storage device also includes: a write switchi... | 08/24/2010 |
| 7715227 | Programmable ROM using two bonded strata A read only memory implemented as a 3D integrated device has a first stratum, a second stratum, and bonded inter-strata connections for coupling the first stratum to the second stratum. The physical bonding between the two strata implements the programming of the re... | 05/11/2010 |
| 7710768 | Electromechanical memory, electric circuit using the same, and method of driving electromechanical memory A memory element which has high affinity with a conventional semiconductor process, which has a switching function of completely interrupting electric conduction paths by in a mechanical manner, and in which nonvolatile information recording is enabled is realized. ... | 05/04/2010 |
| 7649769 | Circuit arrays having cells with combinations of transistors and nanotube switching elements Circuit arrays having cells with combinations of transistors and nanotube switches. Under one embodiment, cells are arranged as pairs with the nanotube switching elements of the pair being cross coupled so that the set electrode of one nanotube switching element is ... | 01/19/2010 |
| 7613039 | Arrangement and method for controlling a micromechanical element The invention concerns an arrangement for controlling a non-volatile memory arrangement for a circuit comprising: a micromechanical element coupled to a substrate; the micromechanical element being responsive to deflection means arranged on the substrate to control ... | 11/03/2009 |
| 7495952 | Relay-connected semiconductor transistors A solid-state semiconductor device operable without loss arising from junction-to junction (e.g., source-to-drain) leakage current includes a movable MEMS switch or relay armature structure carrying at least one electrical contact corresponding to a semiconductor de... | 02/24/2009 |
| 7463513 | Micro-machinery memory device A micro-motor memory device includes at least one rotor having at least one indicator for rotating about an axis; and at least one stator placed adjacent to the rotor for electromagnetically or physically engaging the rotor to rotate the indicator to at least one pr... | 12/09/2008 |
| 7440350 | Semiconductor integrated circuit device A DRAM whose operation is sped up and power consumption is reduced is provided. A pair of precharge MOSFETs for supplying a precharge voltage to a pair of input/output nodes of a CMOS sense amplifier is provided; the pair of input/output nodes are connected to a com... | 10/21/2008 |
| 7402770 | Nano structure electrode design A microelectronic switch having a substrate layer, an electrically conductive switching layer formed on the substrate layer, an electrically conductive cavity layer formed on the switching layer, an electrically conductive cap layer formed on the cavity layer, the c... | 07/22/2008 |
| 7394687 | Non-volatile-shadow latch using a nanotube switch A non-volatile memory cell includes a volatile storage device that stores a corresponding logic state in response to electrical stimulus; and a shadow memory device coupled to the volatile storage device. The shadow memory device receives and stores the correspondin... | 07/01/2008 |
| 7382648 | Nanomechanical switching device A nanomechanical device includes a nanostructure, such as a MWNT, located between two electrodes. The device switches from an OFF state to an ON state by extension of at least one inner shell of the nanostructure relative to at least one outer shell of the nanostruc... | 06/03/2008 |
| 7367119 | Method for forming a reinforced tip for a probe storage device Systems and methods in accordance with the present invention can include a tip contactable with a media. In an embodiment, the tip comprises a substantially hollow structure formed of a metal. The tip can be formed by depositing a first metal layer over silicon ther... | 05/06/2008 |
| 7362605 | Nanoelectromechanical memory cells and data storage devices Nanoelectromechanical (NEM) memory cells are provided by anchoring a conductive nanometer-scale beam (e.g., a nanotube) to a base and allowing a portion of the beam to move. A charge containment layer is provided in the vicinity of this free-moving portion. To read ... | 04/22/2008 |
| 7349236 | Electromechanical memory cell with torsional movement A memory cell uses a pair of cantilevers to store a bit of information. Changing the relative position of the cantilevers determines whether they are electrically conducting or not. The on and off state of this mechanical latch is switched by using, for example, ele... | 03/25/2008 |
| 7336527 | Electromechanical storage device An electromechanical storage device includes an input element that facilitates the input of data, a series of data elements, and a terminating element that facilitates the reading out of data. The data elements each have at least two stable mechanical orientations, ... | 02/26/2008 |
| 7336524 | Atomic probes and media for high density data storage A device in accordance with embodiments of the present invention comprises a contact probe for high density data storage reading, writing, erasing, or rewriting. In one embodiment, the contact probe can include a silicon core having a conductive coating. Contact pro... | 02/26/2008 |
| 7309630 | Method for forming patterned media for a high density data storage device Systems in accordance with the present invention can include a tip contactable with a media, the media including a substrate and a plurality of cells disposed over the substrate, one or more of the cells being electrically isolated from the other of the cells by a m... | 12/18/2007 |
| 7301802 | Circuit arrays having cells with combinations of transistors and nanotube switching elements Circuit arrays having cells with combinations of transistors and nanotube switches. Under one embodiment, a circuit array includes a plurality of cells arranged in an organization of words, each word having a plurality of bits. Each cell is responsive to a bit line,... | 11/27/2007 |
| 7289357 | Isolation structure for deflectable nanotube elements Nanotube-based switching elements and logic circuits. Under one embodiment of the invention, a switching element includes an input node, an output node, a nanotube channel element having at least one electrically conductive nanotube, and a control electrode. The con... | 10/30/2007 |
| 7262984 | Method and apparatus for storing and reading information in a ferroelectric material To store information in a ferroelectric material, a sample probe is used to bring about mechanical action on individual domains and thereby to cause a reversal of polarization in the individual domains, with electrodes situated below the ferroelectric material being... | 08/28/2007 |
| 7260051 | Molecular memory medium and molecular memory integrated circuit A molecular memory media having a media surface and a platform with read/write heads. The platform and media are moved to allow one of addition, removal, and repositioning of atoms, electrons, and charges on a surface of the media. The media is a material capable of... | 08/21/2007 |
| 7245520 | Random access memory including nanotube switching elements A random access memory cell includes first and second nanotube switching elements and an electronic memory with cross-coupled first and second inverters. Each nanotube switching element includes a nanotube channel element having at least one electrically conductive ... | 07/17/2007 |
| 7233517 | Atomic probes and media for high density data storage A device in accordance with embodiments of the present invention comprises an atomic probe for high density data storage reading, writing, erasing, or rewriting. In one embodiment, the atomic probe can include a core having a conductive coating. The core can compris... | 06/19/2007 |
| 7200063 | Circuitry for a programmable element As part of anti-fuse circuitry for a memory device, a preferred exemplary embodiment of the current invention provides a direct connection between an anti-fuse and a contact pad used to provide voltage to that anti-fuse. The contact pad also serves as a voltage sour... | 04/03/2007 |
| 7196923 | Bitcell layout Bitcell layouts for use in electronic devices and systems are described. One embodiment relates to a memory including at least one bitcell, the bitcell including a storage cell region and a read channel region. The storage cell region is substantially L-shaped and i... | 03/27/2007 |
| 7170779 | Non-volatile memory using organic bistable device The present invention provides an organic bistable device for use in non-volatile memories. The organic bistable device comprises a first and a second metal electrode sandwiching a first and a second organic layer with a metal-nanocluster layer positioned between th... | 01/30/2007 |
| 7167408 | Circuitry for a programmable element As part of anti-fuse circuitry for a memory device, a preferred exemplary embodiment of the current invention provides a direct connection between an anti-fuse and a contact pad used to provide voltage to that anti-fuse. The contact pad also serves as a voltage sour... | 01/23/2007 |
| 7115863 | Probe for scanning probe lithography and making method thereof A probe of scanning probe lithography which provides a long time of useful life. The probe has a tip part comprising a conductor and an insulator, the insulator is formed to cover the conductor, and the conductor is formed to provide a substantially uniform cross-se... | 10/03/2006 |
| 7095645 | Nanoelectromechanical memory cells and data storage devices Nanoelectromechanical (NEM) memory cells are provided by anchoring a conductive nanometer-scale beam (e.g., a nanotube) to a base and allowing a portion of the beam to move. A charge containment layer is provided in the vicinity of this free-moving portion. To read ... | 08/22/2006 |
| 7075820 | Semiconductor memory device for dynamically storing data with channel body of transistor used as storage node A semiconductor memory device includes a plurality of MIS transistors arranged at intersections of first word lines and bit lines formed on an SOI substrate and each configuring a memory cell. Each of the plurality of MIS transistors includes a channel body formed i... | 07/11/2006 |
| 7072241 | Semiconductor memory device and multi-chip module comprising the semiconductor memory device In a semiconductor memory device composed of a semiconductor chip and overlaid to a surface of another semiconductor chip so as to connect together, a control circuit provided in the semiconductor memory device is provided with a chip connector portion having a plur... | 07/04/2006 |
| 7050320 | MEMS probe based memory Briefly, in accordance with one embodiment of the invention, a memory device may include a memory layer and a MEMS layer. The memory layer may include an integrated circuit with a multiplexer and optionally a memory controller and a storage medium disposed on the in... | 05/23/2006 |
