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| Number | Title | Issue Date |
| 7848135 | Piezo-driven non-volatile memory cell with hysteretic resistance A piezoelectrically programmed, non-volatile memory cell structure includes a programmable piezo-resistive hysteretic material (PRHM) that is capable of being interconverted between a low resistance state and high resistance state through applied pressure cycling th... | 12/07/2010 |
| 7768821 | Non-volatile SRAM memory cell equipped with mobile gate transistors and piezoelectric operation The present application relates to a non-volatile random-access memory cell equipped with a suspended mobile gate and with piezoelectric means for operating the gate. ... | 08/03/2010 |
| 7710766 | Multi-state memory and multi-functional devices comprising magnetoplastic or magnetoelastic materials Apparatus and methods are disclosed that enable writing data on, and reading data of, multi-state elements having greater than two states. The elements may be made of magnetoplastic and/or magnetoelastic materials, including, for example, magnetic shape-memory alloy... | 05/04/2010 |
| 7688615 | Magnetic random access memory, manufacturing method and programming method thereof A magnetic random access memory (MRAM) and a manufacturing method and a programming method thereof are provided. The magnetic random access memory comprises a first magnetic tunnel junction structure and a second magnetic tunnel junction structure. The second magnet... | 03/30/2010 |
| 7656700 | Magnetoresistive sensor memory with multiferroic material A memory cell includes a magnetoresistive sensor that comprises layers that include a free layer. The magnetoresistive sensor conducts a read current representative of data stored in the memory cell during a read interval. A first write conductor carries a write cur... | 02/02/2010 |
| 7616475 | Memory element and memory A memory element including a memory layer that retains information based on a magnetization state of a magnetic material is provided. In the memory element, a magnetization pinned layer is provided for the memory layer through an intermediate layer, the intermediate... | 11/10/2009 |
| 7402529 | Method of applying cladding material on conductive lines of MRAM devices A method of fabricating a cladding region for use in MRAM devices includes the formation of a conductive bit line proximate to a magnetoresistive memory device. The conductive bit line is immersed in a first bath containing dissolved ions of a first conductive mater... | 07/22/2008 |
| 7382678 | Delay stage-interweaved analog DLL/PLL A methodology is disclosed that enables the delay stages of an analog delay locked loop (DLL) or phase locked loop (PLL) to be programmed according to the operating condition, which may depend on the frequency of the input reference clock. The resulting optimized de... | 06/03/2008 |
| 7376003 | Magnetic random access memory A magnetic field H1 in the hard-axis direction and a magnetic field H2 in the easy-axis direction are caused to simultaneously act on a MTJ element having an ideal asteroid curve, thereby reversing the magnetizing direction of the storing layer of the ... | 05/20/2008 |
| 7372754 | Method and apparatus for controlling slope of word line voltage in nonvolatile memory device A nonvolatile memory device includes a nonvolatile memory cell array including a plurality of nonvolatile memory cells connected to a plurality of word lines, a word line voltage generator configured to generate first and second sequences of voltage pulses. The devi... | 05/13/2008 |
| 7372118 | Magnetic random access memory and method of manufacturing the same A magnetic random access memory includes, a lower electrode, a magnetoresistive element which is arranged above the lower electrode and has side surfaces, and a protective film which covers the side surfaces of the magnetoresistive element, has a same planar shape a... | 05/13/2008 |
| 7367119 | Method for forming a reinforced tip for a probe storage device Systems and methods in accordance with the present invention can include a tip contactable with a media. In an embodiment, the tip comprises a substantially hollow structure formed of a metal. The tip can be formed by depositing a first metal layer over silicon ther... | 05/06/2008 |
| 7366030 | Simultaneous read circuit for multiple memory cells A memory device including a simultaneous read circuit design for multiple memory cells on a single interconnect using a fast fourier transform analysis circuit. The simultaneous read circuit can be used with any memory type storing information as an energy-absorbing... | 04/29/2008 |
| 7355885 | Semiconductor memory device with magnetoresistance elements and method of writing date into the same A semiconductor memory device includes memory cells, first wirings, a first current driver circuit, and a second current driver circuit. The memory cell includes a magneto-resistive element having a first ferromagnetic film, an insulating film formed on the first fe... | 04/08/2008 |
| 7345912 | Method and system for providing a magnetic memory structure utilizing spin transfer A method and system for providing a magnetic memory is described. The method and system include providing magnetic memory cells, local and global word lines, bit lines, and source lines. Each magnetic memory cell includes a magnetic element and a selection device co... | 03/18/2008 |
| 7345475 | Ultrasensitive magnetoelectric thin film magnetometer and method of fabrication An ultrasensitive room temperature magnetoelectric thin film magnetometer is fabricated on a cantilever beam and includes an active magnetoelectric multilayer structure having a plurality of thin films formed at a region defined on the cantilever beam. Upon applicat... | 03/18/2008 |
| 7342822 | Magnetic memory device, write current driver circuit and write current driving method The number of write circuit components, variations in a write current flowing through each write line, and the power consumption for write operation can be reduced. A first constant current circuit and a second constant current circuit (a transistor (Q8) and ... | 03/11/2008 |
| 7336524 | Atomic probes and media for high density data storage A device in accordance with embodiments of the present invention comprises a contact probe for high density data storage reading, writing, erasing, or rewriting. In one embodiment, the contact probe can include a silicon core having a conductive coating. Contact pro... | 02/26/2008 |
| 7313014 | Thin film magnetic memory device and semiconductor integrated circuit device including the same as one of circuit blocks Shape dummy cells that are designed to have the same dimensions and structures as MTJ memory cells are additionally provided in the peripheral portion of an MTJ memory cell array in which normal MTJ memory cells for storing data are arranged in a matrix. The MTJ mem... | 12/25/2007 |
| 7309630 | Method for forming patterned media for a high density data storage device Systems in accordance with the present invention can include a tip contactable with a media, the media including a substrate and a plurality of cells disposed over the substrate, one or more of the cells being electrically isolated from the other of the cells by a m... | 12/18/2007 |
| 7302867 | Magnetic transducer torque measurement A magnetic transducer element is formed by rotating an integral region of a shaft about an axis in the presence of a magnetic source. An annulus of magnetization results in having its magnetization in the axial direction. The exterior magnetic field emanated by the ... | 12/04/2007 |
| 7292025 | Bipolar interrogation for magnetostrictive transducers A magnetostrictive-based sensor is disclosed which obtains higher return signals through the use of multiple consecutive input pulses. ... | 11/06/2007 |
| 7282755 | Stress assisted current driven switching for magnetic memory applications A method and system for providing a magnetic memory is disclosed. The method and system include providing a plurality of magnetic elements and providing at least one stress-assist layer. Each of the plurality of magnetic elements is configured to be written using sp... | 10/16/2007 |
| 7272032 | Semiconductor integrated circuit device and magnetic memory device capable of maintaining data integrity Magnetic memory devices integrated together with a logic circuit on a common semiconductor chip are arranged to have layouts mirror-symmetrical (mirror inversion) with respect to an axis parallel to a magnetization-hard axis of a magneto-resistance element of a magn... | 09/18/2007 |
| 7269045 | Magnetic random access memory with interconnected write lines A magnetic random access memory includes memory cells which store information using an internal magnetization direction. A first write line includes a first extending portion, a second extending portion and a first connection portion. The first extends portion exten... | 09/11/2007 |
| 7260051 | Molecular memory medium and molecular memory integrated circuit A molecular memory media having a media surface and a platform with read/write heads. The platform and media are moved to allow one of addition, removal, and repositioning of atoms, electrons, and charges on a surface of the media. The media is a material capable of... | 08/21/2007 |
| 7257018 | Method and apparatus for a low write current MRAM having a write magnet An invention is provided for a low write current MRAM. Each MRAM cell includes a word line and a bit line. A magnetic device is disposed at the intersection of the word line and the bit line. Disposed at either end of the magnetic device is a writing magnet. The pai... | 08/14/2007 |
| 7240856 | Fuel injection control device This fuel injection control device includes: a fuel injection valve; a piezoelectric element or a solenoid which drives the fuel injection valve; a fuel pump which pressurizes fuel and supplies it to the fuel injection valve; a magnetostrictive element which drives ... | 07/10/2007 |
| 7233517 | Atomic probes and media for high density data storage A device in accordance with embodiments of the present invention comprises an atomic probe for high density data storage reading, writing, erasing, or rewriting. In one embodiment, the atomic probe can include a core having a conductive coating. The core can compris... | 06/19/2007 |
| 7221579 | Method and structure for high performance phase change memory A method (and structure) for a memory cell having a phase change material (PCM) element and a heating element external to the PCM element. The heating element causes one of a presence of and an absence of a phase boundary within the PCM element for storing informati... | 05/22/2007 |
| 7183568 | Piezoelectric array with strain dependant conducting elements and method therefor A structure (and method) for a piezoelectric device, including a layer of piezoelectric material. A nanotube structure is mounted such that a change of shape of the piezoelectric material causes a change in a stress in the nanotube structure. ... | 02/27/2007 |
| 7180769 | World line segment select transistor on word line current source side The word line segment select transistor of a segmented word line array is placed on the word line current source side. This eliminates many undesirable effects currently associated with segmented word line MRAM arrays. ... | 02/20/2007 |
| 7158406 | Data write method of magnetic random access memory A data write method of a magnetic random access memory including a magnetoresistive element which has axis of easy and hard magnetizations, a first write wiring which runs in a direction of the axis of easy magnetization, and a second write wiring which runs in a di... | 01/02/2007 |
| 7148550 | Semiconductor device and semiconductor device data write method having magneto-resistance effect element A semiconductor device includes a memory portion in which a plurality of magneto-resistance effect elements each having a hard-axis of magnetization and an easy-axis of magnetization are arranged and one of binary data is written in all the magneto-resistance effect... | 12/12/2006 |
| 7123507 | Using permanent magnets in MRAM to assist write operation A method, information processing system and computer readable medium for transferring data between applications on a computer is disclosed. The method includes selecting data from a first application and selecting a copy-to command for copying the data selected from... | 10/17/2006 |
| 7095069 | Magnetoresistive random access memory, and manufacturing method thereof The present invention discloses a magnetoresistive random access memory (MRAM) and a manufacturing method thereof. The whole cells are connected to each other by using a substrate as a ground terminal and a vertical structure field effect transistor (FET) for connec... | 08/22/2006 |
| 7079414 | Magnetic random access memory device A memory cell array is constructed by two-dimensionally arranging a plurality of memory cells each composed of a magnetoresistive element, in a row and column directions. Write word lines are provided along the row direction of the memory cell array. Write bit lines... | 07/18/2006 |
| 7075814 | Method for homogeneously magnetizing an exchange-coupled layer system of a digital magnetic memory location device A method and apparatus for homogeneously magnetizing an exchange-coupled layer system of a digital magnetic memory cell device comprising an AAF layer system and an antiferromagnetic layer that exchange-couples a layer of the AAF layer system, characterized in that,... | 07/11/2006 |
| 7060543 | Method of forming a conductive line for a semiconductor device using a carbon nanotube and semiconductor device manufactured using the method In a method of forming a conductive line for a semiconductor device using a carbon nanotube and a semiconductor device manufactured using the method, the method includes activating a surface of an electrode of the semiconductor device using surface pretreatment to c... | 06/13/2006 |
| 7061037 | Magnetic random access memory with multiple memory layers and improved memory cell selectivity A magnetic random access memory (MRAM) has multiple stacked memory layers, with each memory layer being a plurality of alternating rows of memory cells and electrically conductive access lines. The access lines in each layer are aligned with the access lines in the ... | 06/13/2006 |
