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| Number | Title | Issue Date |
| RE42040 | Switching element method of driving switching element rewritable logic integrated circuit and memory A switching element has an ion conductor capable of conducting metal ions for use in an electrochemical reaction therein, a first electrode and a second electrode which are disposed in contact with said ion conductor and spaced a predetermined distance from each oth... | 01/18/2011 |
| 7804704 | PMC memory with improved retention time and writing speed A PMC memory including: a memory cell, the memory cell including, an active zone, a heating element disposed outside of the active zone, and at least two contacts that apply a writing voltage to the memory cell, wherein the heating element transitionally heats the m... | 09/28/2010 |
| 7417247 | Pentaarylcyclopentadienyl units as active units in resistive memory elements Polymers are described which exhibit a resistive hysteresis effect. The polymers include a polymer backbone to which pentaarylcyclopentadienyl radicals are bonded as side groups. A resistive memory element is formed that includes the polymer as a storage medium. By ... | 08/26/2008 |
| 7367119 | Method for forming a reinforced tip for a probe storage device Systems and methods in accordance with the present invention can include a tip contactable with a media. In an embodiment, the tip comprises a substantially hollow structure formed of a metal. The tip can be formed by depositing a first metal layer over silicon ther... | 05/06/2008 |
| 7336524 | Atomic probes and media for high density data storage A device in accordance with embodiments of the present invention comprises a contact probe for high density data storage reading, writing, erasing, or rewriting. In one embodiment, the contact probe can include a silicon core having a conductive coating. Contact pro... | 02/26/2008 |
| 7336527 | Electromechanical storage device An electromechanical storage device includes an input element that facilitates the input of data, a series of data elements, and a terminating element that facilitates the reading out of data. The data elements each have at least two stable mechanical orientations, ... | 02/26/2008 |
| 7332401 | Method of fabricating an electrode structure for use in an integrated circuit An electrode structure includes a first layer of conductive material and a dielectric layer formed on a surface of the first layer. An opening is formed in the dielectric layer to expose a portion of the surface of the first layer. A binding layer is formed on the d... | 02/19/2008 |
| 7326979 | Resistive memory device with a treated interface A multi-resistive state element that uses a treated interface is provided. A memory plug includes at least two electrodes that sandwich a multi-resistive state element. Using different treatments on both electrode/multi-resistive state element interfaces improves th... | 02/05/2008 |
| 7321504 | Static random access memory cell A static random access memory (SRAM) cell having an inverter and a tri-state inverter. An input of the inverter is coupled to an output of the tri-state inverter and an output of the inverter is coupled to an input of the tri-state inverter. The tri-state inverter h... | 01/22/2008 |
| 7312100 | In situ patterning of electrolyte for molecular information storage devices This invention pertains to methods assembly of organic molecules and electrolytes in hybrid electronic. In one embodiment, a method is provided that involves contacting a surface/electrode with a compound of formula: R-L2-M-L1-Z1 whe... | 12/25/2007 |
| 7309875 | Nanocrystal protective layer for crossbar molecular electronic devices A molecular device is provided. The molecular device comprises a junction formed by a pair of crossed electrodes where a first electrode is crossed by a second electrode at a non-zero angle and at least one connector species including at least one switchable moiety ... | 12/18/2007 |
| 7309630 | Method for forming patterned media for a high density data storage device Systems in accordance with the present invention can include a tip contactable with a media, the media including a substrate and a plurality of cells disposed over the substrate, one or more of the cells being electrically isolated from the other of the cells by a m... | 12/18/2007 |
| 7303939 | Electro- and electroless plating of metal in the manufacture of PCRAM devices Non-volatile, resistance variable memory devices, integrated circuit elements, and methods of forming such devices are provided. According to one embodiment of a method of the invention, a memory device can be fabricated by depositing a chalcogenide material onto a ... | 12/04/2007 |
| 7301802 | Circuit arrays having cells with combinations of transistors and nanotube switching elements Circuit arrays having cells with combinations of transistors and nanotube switches. Under one embodiment, a circuit array includes a plurality of cells arranged in an organization of words, each word having a plurality of bits. Each cell is responsive to a bit line,... | 11/27/2007 |
| 7301887 | Methods for erasing bit cells in a high density data storage device Methods in accordance with the present invention can be applied, in an embodiment, to a media comprising a phase change material to alter a resolved portion of the phase change material to have a resistance different from a resistance of the bulk material. A tip hav... | 11/27/2007 |
| 7286387 | Reducing the effect of write disturbs in polymer memories The write disturb that occurs in polymer memories may be reduced by writing back data after a read in a fashion which offsets any effect on the polarity of bits in bit lines associated with the addressed bit. For example, each time the data is written back, its pola... | 10/23/2007 |
| 7282387 | Electro- and electroless plating of metal in the manufacture of PCRAM devices Non-volatile, resistance variable memory devices, integrated circuit elements, and methods of forming such devices are provided. According to one embodiment of a method of the invention, a memory device can be fabricated by depositing a chalcogenide material onto a ... | 10/16/2007 |
| 7280394 | Field effect devices having a drain controlled via a nanotube switching element Field effect devices having a drain controlled via a nanotube switching element. Under one embodiment, a field effect device includes a source region and a drain region of a first semiconductor type and a channel region disposed therebetween of a second semiconducto... | 10/09/2007 |
| 7271407 | Switchable circuit assemblies and semiconductor constructions The invention includes a switchable circuit device. The device comprises a first conductive layer and a porous silicon matrix over the first conductive layer. A material is dispersed within pores of the porous silicon matrix, and the material has two stable states. ... | 09/18/2007 |
| 7271403 | Isolating phase change memory devices A phase change memory may be made using an isolation diode in the form of a Schottky diode between a memory cell and a word line. The use of Schottky diode isolation devices may make the memory more scaleable in some embodiments. ... | 09/18/2007 |
| 7269052 | Device selection circuitry constructed with nanotube technology A memory system having electromechanical memory cells and decoders is disclosed. A decoder circuit selects at least one of the memory cells of an array of such cells. Each cell in the array is a crossbar junction at least one element of which is a nanotube or a nano... | 09/11/2007 |
| 7264988 | Electro-and electroless plating of metal in the manufacture of PCRAM devices Non-volatile, resistance variable memory devices, integrated circuit elements, and methods of forming such devices are provided. According to one embodiment of a method of the invention, a memory device can be fabricated by depositing a chalcogenide material onto a ... | 09/04/2007 |
| 7260051 | Molecular memory medium and molecular memory integrated circuit A molecular memory media having a media surface and a platform with read/write heads. The platform and media are moved to allow one of addition, removal, and repositioning of atoms, electrons, and charges on a surface of the media. The media is a material capable of... | 08/21/2007 |
| 7259744 | Dielectrophoretic displays A dielectrophoretic display comprises a substrate having walls defining at least one cavity, the cavity having a viewing surface and a side wall inclined to the viewing surface; a suspending fluid contained within the cavity; a plurality of at least one type of part... | 08/21/2007 |
| 7254053 | Active programming and operation of a memory device Systems and methodologies for programming a memory cell having a functional or selective conductive layer are provided. The functional zone can include active, and/or passive and/or barrier layers. The system includes a controller that can actively trace conditions ... | 08/07/2007 |
| 7238994 | Thin film plate phase change ram circuit and manufacturing method A memory device comprising a access circuits, an electrode layer over the access circuits, an array of phase change memory bridges over the electrode layer, and a plurality of bit lines over the array of phase change memory bridges. The electrode layer includes elec... | 07/03/2007 |
| 7233517 | Atomic probes and media for high density data storage A device in accordance with embodiments of the present invention comprises an atomic probe for high density data storage reading, writing, erasing, or rewriting. In one embodiment, the atomic probe can include a core having a conductive coating. The core can compris... | 06/19/2007 |
| 7227169 | Programmable surface control devices and method of making same Programmable surface control devices whose physical features, such as surface characteristics and mass distribution, are controlled by the presence or absence of an electrodeposition of metal and/or metal ions from a solid solution upon application of a suitable ele... | 06/05/2007 |
| 7214632 | Using selective deposition to form phase-change memory cells A phase-change memory cell may be formed by selectively depositing the lower electrode in the phase-change memory pore. Thereafter, an adhesion-promoting material may be selectively deposited on the selectively deposited lower electrode and the upper surface surroun... | 05/08/2007 |
| 7211854 | Field effect devices having a gate controlled via a nanotube switching element Field effect devices having a gate controlled via a nanotube switching element. Under one embodiment, a non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and each in electrical communication with a r... | 05/01/2007 |
| 7199444 | Memory device, programmable resistance memory cell and memory array A method of metal doping a chalcogenide material includes forming a metal over a substrate. A chalcogenide material is formed on the metal. Irradiating is conducted through the chalcogenide material to the metal effective to break a chalcogenide bond of the chalcoge... | 04/03/2007 |
| 7169635 | Programmable structure, an array including the structure, and methods of forming the same A microelectronic programmable structure suitable for storing information, and array including the structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electro... | 01/30/2007 |
| 7161218 | One-time programmable, non-volatile field effect devices and methods of making same One-time programmable, non-volatile field effect devices and methods of making same. Under one embodiment, a one-time-programmable, non-volatile field effect device includes a source, drain and gate with a field-modulatable channel between the source and drain. Each... | 01/09/2007 |
| 7153721 | Resistance variable memory elements based on polarized silver-selenide network growth The invention relates to a resistance variable memory element including polarizable metal-chalcogen regions within a doped chalcogenide glass. A method for physically aligning the polarizable metal-chalcogen regions to form a conducting channel is provided. The inve... | 12/26/2006 |
| 7149108 | Memory array of a non-volatile RAM Non-volatile memory cell with a single semiconductor device per memory cell. The present invention generally allows for a plurality of memory cells to be formed on a semiconductor substrate that supports a semiconductor device. A multi-resistive state material layer... | 12/12/2006 |
| 7145794 | Programmable microelectronic devices and methods of forming and programming same A microelectronic programmable structure and methods of forming and programming the structure. The programmable structure generally include an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying a bias acros... | 12/05/2006 |
| 7145793 | Electrically addressable memory switch A novel switching device is provided with an active region arranged between first and second electrodes and including a molecular system and ionic complexes distributed in the system. A control electrode is provided for controlling an electric field applied to the a... | 12/05/2006 |
| 7132675 | Programmable conductor memory cell structure and method therefor In programmable conductor memory cells, metal ions precipitate out of a glass electrolyte element in response to an applied electric field in one direction only, causing a conductive pathway to grow from cathode to anode. The amount of conductive pathway growth, and... | 11/07/2006 |
| 7126841 | Non-volatile memory with a single transistor and resistive memory element Non-volatile memory cell with a single semiconductor device per memory cell. The present invention generally allows for a plurality of memory cells to be formed on a semiconductor substrate that supports a semiconductor device. A multi-resistive state material layer... | 10/24/2006 |
| 7120047 | Device selection circuitry constructed with nanotube technology A memory system having electromechanical memory cells and decoders is disclosed. A decoder circuit selects at least one of the memory cells of an array of such cells. Each cell in the array is a crossbar junction at least one element of which is a nanotube or a nano... | 10/10/2006 |
