Class 365/145 - Ferroelectric

Subclass of Class 365 - Static information storage and retrieval
Definition: Subject matter where the storage element is ferroelectric.
No. of patents: 1905
Last issue date: 02/07/2012

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Number	Title	Issue Date
8111537	Semiconductor memory A semiconductor memory that includes a memory cell array by which power consumption can be reduced and that enables a reduction in circuit area. In the memory cell array, each of capacitor plate lines is arranged so as to connect with ferroelectric memory cells in a...	02/07/2012
8094479	Semiconductor memory device A memory includes ferroelectric capacitors; sense amplifiers configured to detect the data stored in ferroelectric capacitors; and a plate control circuit configured to receive a plate driving signal driving a plate line, a write signal indicating writing of data fr...	01/10/2012
8085573	Ferroelectric memory A ferroelectric memory of an embodiment of the present invention includes a plurality of units, in each of which a ferroelectric capacitor and a transistor are connected to each other in parallel. The memory includes first and second memory cell arrays, first and se...	12/27/2011
8085574	Nonvolatile ferroelectric memory and control device using the same A nonvolatile ferroelectric memory immediately outputs data stored in a page buffer without performing a cell access operation when a page buffer is accessed. Since a block page address region and a column page address region are arranged in less significant bit reg...	12/27/2011
8085572	Semiconductor memory apparatus A semiconductor memory apparatus includes a unit cell with a transistor having a floated body and a capacitor for storing charges; a word line for activating the unit cell; and a bit line for transmitting data to the unit cell. ...	12/27/2011
8081499	Semiconductor integrated circuit A field-effect transistor for nonvolatile memory holding use and a field-effect transistor for logical operation use are manufactured in the same structure on the same semiconductor substrate without separately providing manufacturing processes for the field-effect ...	12/20/2011
8081500	Method for mitigating imprint in a ferroelectric memory An array of ferroelectric memory cells that allows imprint mitigation includes ferroelectric memory cells respectively coupled to word lines, plate lines, and bit lines; a word line driver for driving the word lines; a plate line driver for driving the plate lines; ...	12/20/2011
8077494	Ferroelectric memory with sub bit-lines connected to each other and to fixed potentials A memory capable of suppressing increase of a chip area thereof while preventing nonselected subarrays from disturbance is obtained. This memory comprises a first transistor for connecting respective sub bit lines with each other, and connects the sub bit lines of t...	12/13/2011
8072789	Resistance-change memory device A resistance-change memory device is provided and includes a stack constituting a tunnel magnetoresistance effect element that has a magnetic layer in which a direction of magnetization is switchable and that is formed on a conductive layer, and the stack is include...	12/06/2011
8072790	High speed FRAM including a deselect circuit High speed FRAM including a deselect circuit is realized for replacing SRAM, wherein the deselect circuit is connected to a local bit line pair for forcing a middle voltage to storage nodes of ferroelectric capacitors of unselected memory cell while a plate line of ...	12/06/2011
8072823	Semiconductor memory device A semiconductor memory device includes a memory cell provided at an intersection of a word line and a bit line, a precharge circuit connected to the bit line, a column select circuit controlled in accordance with a write control signal, and a clamp circuit provided ...	12/06/2011
8064240	Semiconductor memory device A memory includes word lines; plate lines; first to eighth bit lines; cell transistors; ferroelectric capacitor connected in parallel with cell transistors; sense amplifiers, wherein cell transistors and ferroelectric capacitors configure cells, the cells are connec...	11/22/2011
8064242	Very high speed FRAM for replacing SRAM For replacing SRAM with very high speed FRAM, new memory architecture is realized such that plurality of FRAM cells is connected to a local bit line pair, a local sense amp is connected to the local bit line pair, a global sense amp is connected to the local sense a...	11/22/2011
8064241	Semiconductor memory including voltage detection circuit for generating sense amplifier signal A voltage detection circuit outputs a detection signal when an amount of charges read to one of a pair of bit lines reaches a predetermined amount. A mask circuit of a timing generator masks an output of a sense amplifier activation signal until the detection signal...	11/22/2011
8059445	Ferroelectric memory A ferroelectric memory according to an embodiment of the present invention includes a memory cell array including plural memory cells, and provided with plural word lines, plural bit lines, and plural plate lines, each of the plate lines corresponding to at least tw...	11/15/2011
8045358	Nonvolatile semiconductor memory device According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory device including: a memory cell array including: memory cell blocks each having series-connected memory cells; wordlines; and a bitline pair connected to the memory...	10/25/2011
8045357	Semiconductor memory device A memory includes a memory cell array including destructive read-out type memory cells; a decoder selecting a cell; a sense amplifier configured to detect the data; and a read and write controller controlling a read operation and a write operation, wherein the read ...	10/25/2011
8031507	Semiconductor memory device The sense amplifier detects and amplifies a signal read via bit lines from the ferroelectric capacitor of the memory cell. The dummy capacitor provides a reference voltage to bit lines. The dummy capacitor includes a first dummy capacitor and a second dummy capacito...	10/04/2011
8023308	Non-volatile memory circuit using ferroelectric capacitor storage element A non-volatile memory cell and related system utilize ferroelectric capacitors as data storage elements. Circuitry is provided for writing to a single ferroelectric capacitor storage element, as well as to dual storage elements operating inversely. The storage eleme...	09/20/2011
8023309	Semiconductor memory device, method for fabricating the same and semiconductor switching device A first electrode is formed on a stacked-layer film, which is formed of a ferroelectric layer and a semiconductor layer, at the ferroelectric layer and a plurality of second electrodes are formed on the stacked-layer film at the semiconductor layer side. Each of par...	09/20/2011
8018754	Non-volatile memory circuit using ferroelectric capacitor storage element A non-volatile memory cell and related system utilize ferroelectric capacitors as data storage elements. Circuitry is provided for writing to a single ferroelectric capacitor storage element, as well as to dual storage elements operating inversely. The storage eleme...	09/13/2011
8014186	Ferroelectric memory device and operating method for the same A ferroelectric memory device includes: a plurality of memory banks configured to include a memory cell array composed of a ferroelectric memory; a cache bank configured to be bus-connected with the memory banks, and for copying data stored in the memory banks; and ...	09/06/2011
8004871	Semiconductor memory device including FET memory elements A memory cell includes a memory element including a MFSFET having a gate insulating film made of a ferroelectric film, and a selection switching element including a MISFET having a gate insulating film made of a paraelectric film. A load element for a read operation...	08/23/2011
7995370	Semiconductor memory device and electronic apparatus A ferroelectric memory includes a memory cell array including a first unit block, a second unit block, and a plurality of dummy cells. The plurality of dummy cells being arranged toward a column direction and being disposed between the first unit block and the secon...	08/09/2011
7990749	Variable impedance circuit controlled by a ferroelectric capacitor A memory cell comprising a ferroelectric capacitor, a variable impedance element and a conductive load is disclosed. The ferroelectric capacitor, characterized by first and second polarization states, is connected between a control terminal and a first switch termin...	08/02/2011
7990750	Ferroelectric memory A ferroelectric memory of an embodiment of the present invention includes m platelines arranged in a first interconnect layer (m is a positive integer), n bitlines arranged in a second interconnect layer (n is a positive integer), and m×n memory cells arranged at m...	08/02/2011
7983067	Semiconductor memory device with ferroelectric memory A semiconductor memory device includes plural word lines, plural first bit lines, plural plate lines formed corresponding to the word lines, plural second bit lines formed corresponding to the first bit lines, plural first ferroelectric capacitors each including a f...	07/19/2011
7983066	Passive matrix-addressable memory apparatus Disclosed is a passive matrix-addressable memory apparatus. The passive matrix-addressable memory apparatus comprises: a plurality of first electrode lines horizontally arranged with respect to each other; a plurality of second electrode lines disposed orthogonal to...	07/19/2011
7978494	Radio frequency identification device initializing a memory using an offset voltage An RFID device sets initial data stored in a memory using an offset voltage and includes an analog block, a digital block, and a memory block. The memory blocks is configured to read/write data in a cell array unit. The memory block includes an offset controller tha...	07/12/2011
7965535	Electrode master for ferroelectric recording and method for recording on ferroelectric recording medium An electrode master for ferroelectric recording records information on a ferroelectric recording medium in which the direction of polarization of a ferroelectric material has been unified in one direction by applying a voltage thereto, based on the direction of pola...	06/21/2011
7965536	Ferroelectric memory device According to an aspect of the present invention, there is provided a ferroelectric memory device including: a cell unit including: a first select transistor having a first source, a first drain, and a first gate, one of the first source and the first drain being con...	06/21/2011
7961492	Charge storage circuit, voltage stabilizer circuit, method for storing charge using the same A charge storage circuit includes a plurality of word lines, a plurality of bit lines, and a plurality of memory cells connected to a corresponding word line among the word lines and connected to a corresponding bit line among the bit lines. Each of the memory cells...	06/14/2011
7961493	Programmable device A programmable device including a source-drain-gate structure. The device includes two programming electrodes and an antiferromagnetic multiferroic material between the two programming electrodes for switching the spontaneous polarization between a first spontaneous...	06/14/2011
7952907	Ferroelectric random access memory device An FRAM device includes first ferroelectric capacitors, second ferroelectric capacitors, first plate lines and second plate lines. The first ferroelectric capacitors can be connected between word lines and bit lines. The second ferroelectric capacitors can be connec...	05/31/2011
7948788	Method for driving ferroelectric memory device, ferroelectric memory device, and electronic equipment A method for driving a ferroelectric memory device having a plurality of memory cells that store data and a memory cell for flag is provided. The method includes, upon writing to the plurality of memory cells, the steps of: reading data from the plurality of memory ...	05/24/2011
7933138	F-RAM device with current mirror sense amp A F-RAM memory device containing a current mirror sense amp. A F-RAM memory device containing a current mirror sense amp coupled to a negative voltage generator. A method of reading data from and restoring data back into F-RAM cells in a 2T2C F-RAM device containing...	04/26/2011
7924599	Non-volatile memory circuit using ferroelectric capacitor storage element A non-volatile memory cell and related system utilize ferroelectric capacitors as data storage elements. Circuitry is provided for writing to a single ferroelectric capacitor storage element, as well as to dual storage elements operating inversely. The storage eleme...	04/12/2011
7920404	Ferroelectric memory devices with partitioned platelines One embodiment relates to a ferroelectric memory device. The ferroelectric memory device includes a segment of contiguous ferroelectric memory cells arranged in rows and columns. A row of ferroelectric memory cells includes a common wordline that allows access to th...	04/05/2011
7916513	Non-destructive read back for ferroelectric data storage device A data storage device comprising a ferroelectric layer, a perovskite structure, and at least one sensor, where the perovskite structure has a polarity discontinuity configured to generate capacitance voltages in the perovskite structure based on polarization charges...	03/29/2011
7911821	Semiconductor memory device A ferroelectric memory is provided with a voltage generating circuit configured to generate prescribed driving potential, a driving interconnection to which the driving potential is applied, a plurality of memory cells connected to the driving interconnections and a...	03/22/2011

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Class 365/145 - Ferroelectric