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| Number | Title | Issue Date |
| 7460389 | Write operations for phase-change-material memory Improved write operation techniques for use in phase-change-material (PCM) memory devices are disclosed. By way of one example, a method of performing a write operation in a phase-change-material memory cell, the memory cell having a set phase and a reset phase asso... | 12/02/2008 |
| 7426135 | Static random access memory cell using chalcogenide A static random access memory may be formed using a bitline and a bitline bar coupled to ovonic threshold switches. The ovonic threshold switches may, in turn, be coupled to cross coupled NMOS transistors. In some embodiments, a very compact static random access mem... | 09/16/2008 |
| 7375405 | Magnetoresistance effect element, magnetic head, and magnetic storage system using a giant magnetoresistance effect element A magnetoresistance effect (MR) device incorporating a spin valve film, and a magnetic head, a magnetic head assembly and a magnetic recording/reproducing system incorporating the MR device, wherein the magnetization direction of a free layer is at a certain angle t... | 05/20/2008 |
| 7367119 | Method for forming a reinforced tip for a probe storage device Systems and methods in accordance with the present invention can include a tip contactable with a media. In an embodiment, the tip comprises a substantially hollow structure formed of a metal. The tip can be formed by depositing a first metal layer over silicon ther... | 05/06/2008 |
| 7362608 | Phase change memory fabricated using self-aligned processing A memory includes transistors in rows and columns providing an array, first conductive lines in columns across the array, and second conductive lines encapsulated by dielectric material in rows across the array. Each second conductive line is coupled to one side of ... | 04/22/2008 |
| 7359231 | Providing current for phase change memories A programmable current source for a phase change memory allows a single current source to controllably provide the current for reading and writing both set and reset bits. In addition, the current source can vary the current based on the characteristics of a particu... | 04/15/2008 |
| 7336526 | Semiconductor device To improve the reliability of the phase change element, unwanted current should not be flown into the element. Therefore, an object of the present invention is to provide a memory cell that stores information depending on a change in its state caused by applied heat... | 02/26/2008 |
| 7335395 | Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles Methods of Using Preformed Nanotubes to Make Carbon Nanotube Films, Layers, Fabrics, Ribbons, Elements and Articles are disclosed. To make various articles, certain embodiments provide a substrate. Preformed nanotubes are applied to a surface of the substrate to cre... | 02/26/2008 |
| 7336524 | Atomic probes and media for high density data storage A device in accordance with embodiments of the present invention comprises a contact probe for high density data storage reading, writing, erasing, or rewriting. In one embodiment, the contact probe can include a silicon core having a conductive coating. Contact pro... | 02/26/2008 |
| 7323707 | Initializing phase change memories A thin film phase change memory may be provided with a layer which changes between amorphous and crystalline states. The threshold voltage of that layer may be increased in a variety of fashions. As a result of the threshold increase, it is possible to transition ce... | 01/29/2008 |
| 7314658 | Storage medium for data This disclosure relates to a data storage medium, and in particular to a data storage medium comprising at least one high modulus layer. In one embodiment, an asymmetric optical storage medium can comprise: a substrate layer comprising polyarylene ether, a high modu... | 01/01/2008 |
| 7315465 | Methods of operating and forming chalcogenide glass constant current devices The invention is related to methods and apparatus for providing a two-terminal constant current device, and its operation thereof. The invention provides a constant current device that maintains a constant current over an applied voltage range of at least approximat... | 01/01/2008 |
| 7309518 | Radial tilt reduced media A storage media can comprise: a plastic substrate, an optical layer, a reflective layer disposed between the optical layer and the substrate, and an adhesive layer disposed between the optical layer and the reflective layer. The optical layer can have an optical lay... | 12/18/2007 |
| 7309630 | Method for forming patterned media for a high density data storage device Systems in accordance with the present invention can include a tip contactable with a media, the media including a substrate and a plurality of cells disposed over the substrate, one or more of the cells being electrically isolated from the other of the cells by a m... | 12/18/2007 |
| 7301802 | Circuit arrays having cells with combinations of transistors and nanotube switching elements Circuit arrays having cells with combinations of transistors and nanotube switches. Under one embodiment, a circuit array includes a plurality of cells arranged in an organization of words, each word having a plurality of bits. Each cell is responsive to a bit line,... | 11/27/2007 |
| 7301887 | Methods for erasing bit cells in a high density data storage device Methods in accordance with the present invention can be applied, in an embodiment, to a media comprising a phase change material to alter a resolved portion of the phase change material to have a resistance different from a resistance of the bulk material. A tip hav... | 11/27/2007 |
| 7295467 | Semiconductor memory having electrically erasable and programmable semiconductor memory cells An electrically alterable non-volatile multi-level memory device and a method of operating such a device, which includes setting a status of at least one of the memory cells to one state selected from a plurality of states including at least first to fourth level st... | 11/13/2007 |
| 7295464 | Phase change memory device and method of programming the same A phase change memory device includes a memory cell having a phase change material, a write driver which supplies a step-down set current to the memory cell, where the step-down set current includes a plurality of successive steps of decreasing current magnitude, an... | 11/13/2007 |
| 7283383 | Phase change resistor cell, nonvolatile memory device and control method using the same A nonvolatile memory device features a phase change resistor cell as a cross-point cell using a phase change resistor and a serial diode switch. The phase change resistor has logic data corresponding to a crystallization state changed by the amount of current suppli... | 10/16/2007 |
| 7280394 | Field effect devices having a drain controlled via a nanotube switching element Field effect devices having a drain controlled via a nanotube switching element. Under one embodiment, a field effect device includes a source region and a drain region of a first semiconductor type and a channel region disposed therebetween of a second semiconducto... | 10/09/2007 |
| 7280390 | Reading phase change memories without triggering reset cell threshold devices A phase change memory may be read so as to reduce the likelihood of a read disturb. A read disturb may occur, for example, when a reset device is raised to a voltage, which causes its threshold device to trigger. The triggering of the threshold device produces a dis... | 10/09/2007 |
| 7259982 | Reading phase change memories to reduce read disturbs Read disturbs in phase change memories may be reduced by progressively reducing the read pulse falling edges. This may reduce the possibility of quenching and inadvertent amorphization of at least a portion of the bit. As a result, in some embodiments, read disturbs... | 08/21/2007 |
| 7256668 | Phase change control devices and circuits for guiding electromagnetic waves employing phase change control devices A circuit for guiding electromagnetic waves includes a substrate for supporting components of the circuit. The circuit includes a control device which includes a first conductive element on the substrate for connection to a first component of the circuit and a secon... | 08/14/2007 |
| 7254056 | Apparatus for optically pre-programming electrically-programmable phase-change memory devices In an embodiment, a phase change non-volatile memory includes a number of memory cells. The memory cells include a phase change material which may transition between two memory states. The phase change material has different electrical properties in different states... | 08/07/2007 |
| 7242605 | Phase-change memory device and method that maintains the resistance of a phase-change material in a reset state within a constant resistance range Provided are a phase-change memory device and method that maintains a resistance of a phase-change material in a reset state within a constant resistance range. In the method, data is provided to a first phase-change memory cell and then it is first determined wheth... | 07/10/2007 |
| 7227817 | Low profile optical head An optical head of a type useable in a optical disk reader/writer is provided. The optical head has a low profile, e.g., in a vertical direction parallel to the disk spin axis, such as less than about 5 mm preferably less than about 3 mm. Substantially all component... | 06/05/2007 |
| 7227674 | Active digital hologram display Certain types of holographic recording materials can be used to updateably record holographic stereograms formed when fringe patterns are generated through interference of an object laser beam containing image information with a reference laser beam. In this manner,... | 06/05/2007 |
| 7214752 | Homopolymers which exhibit a high level of photo-inducable birefringence Homopolymers suitable for storage of information provided optically are disclosed. The are formed from monomers which contain groupings which are at least trinuclear, which are capable of absorbing the electromagnetic radiation of ... | 05/08/2007 |
| 7211854 | Field effect devices having a gate controlled via a nanotube switching element Field effect devices having a gate controlled via a nanotube switching element. Under one embodiment, a non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and each in electrical communication with a r... | 05/01/2007 |
| 7193963 | Method for inputting information into a data storage medium that is optically recordable and readable In a method of entering information into an optically writable and readable data storage medium having a polymer film which can be changed locally by heating in order to store information and to which there is assigned an absorber dye (34) which is set up to ... | 03/20/2007 |
| 7191153 | Content distribution method and apparatus Media which stores protected content is distributed to users without the need for payment at the time of media distribution. Payment can be performed at a later time in response to which content may be enabled, and/or users may selectively pay for, and receive enabl... | 03/13/2007 |
| 7187578 | Magnetic elements having unique shapes Magnetic elements having unique shapes. In one example, the magnetic element defines an outer peripheral profile and a center point, wherein the outer peripheral profile includes a substantially curviform section and a notch section. The notch section may be configu... | 03/06/2007 |
| 7176505 | Electromechanical three-trace junction devices Three trace electromechanical circuits and methods of using same. A circuit includes first and second electrically conductive elements with a nanotube ribbon (or other electromechanical elements) disposed therebetween. An insulative layer is disposed on one of the f... | 02/13/2007 |
| 7161218 | One-time programmable, non-volatile field effect devices and methods of making same One-time programmable, non-volatile field effect devices and methods of making same. Under one embodiment, a one-time-programmable, non-volatile field effect device includes a source, drain and gate with a field-modulatable channel between the source and drain. Each... | 01/09/2007 |
| 7158273 | Holographic data memory A holographic data storage medium has a polymer film which is set up as a storage layer whose refractive index can be changed locally by heating. The polymer film is set up for the storage of optical phase information via the local optical path length of the polymer... | 01/02/2007 |
| 7153546 | Perpendicular magnetic recording media, manufacturing process of the same, and magnetic storage apparatus using the same Provided are a double-layer perpendicular magnetic recording medium having a high medium S/N at an areal recording density of 50 Gbits or more per square inch, and a magnetic storage apparatus having excellent reliability with a low error rate. The perpendicular mag... | 12/26/2006 |
| 7151029 | Memory device and method of making the same A multi-stable memory or data storage element is used in crosspoint data-storage arrays, as a switch, a memory device, or as a logical device. The general structure of the multi-stable element comprises a layered, composite medium that both transports and stores cha... | 12/19/2006 |
| 7130214 | Low-current and high-speed phase-change memory devices and methods of driving the same Phase-change memories in which phase is changed by varying the resistance by a small amount are provided. In the phase-change memory, a set state is defined as a state where amorphous nuclei are formed in a phase-change layer of a memory cell and the phase-change la... | 10/31/2006 |
| 7120047 | Device selection circuitry constructed with nanotube technology A memory system having electromechanical memory cells and decoders is disclosed. A decoder circuit selects at least one of the memory cells of an array of such cells. Each cell in the array is a crossbar junction at least one element of which is a nanotube or a nano... | 10/10/2006 |
| 7115901 | Non-volatile electromechanical field effect devices and circuits using same and methods of forming same Non-volatile field effect devices and circuits using same. A non-volatile field effect device includes a source, drain and gate with a field-modulatable channel between the source and drain. Each of the source, drain, and gate have a corresponding terminal. An elect... | 10/03/2006 |
