Bizarre Patents
An electrified table cloth for preventing crawling insects from gaining access to the consumer's food or drink.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7411807 | System and method for optically interconnecting memory devices A memory device includes a semiconductor substrate in which memory circuitry has been fabricated. An address converter and a control signal converter are coupled to an address decoder and control logic, respectively. The address and control converters are operable t... | 08/12/2008 |
| 7307872 | Nonvolatile semiconductor static random access memory device A nonvolatile semiconductor memory device obtained by combining a nonvolatile memory device with a SRAM is provided to improve operating speed and reliability. The nonvolatile semiconductor memory device includes a plurality of data registers. Preferably, each of th... | 12/11/2007 |
| 7289347 | System and method for optically interconnecting memory devices A memory device includes a semiconductor substrate in which memory circuitry has been fabricated. An address converter and a control signal converter are coupled to an address decoder and control logic, respectively. The address and control converters are operable t... | 10/30/2007 |
| 7254056 | Apparatus for optically pre-programming electrically-programmable phase-change memory devices In an embodiment, a phase change non-volatile memory includes a number of memory cells. The memory cells include a phase change material which may transition between two memory states. The phase change material has different electrical properties in different states... | 08/07/2007 |
| 7200024 | System and method for optically interconnecting memory devices A memory device includes a semiconductor substrate in which memory circuitry has been fabricated. An address converter and a control signal converter are coupled to an address decoder and control logic, respectively. The address and control converters are operable t... | 04/03/2007 |
| 7106622 | Phase-change memory device capable of preprogramming memory cells optically and reading/writing memory cells electrically In an embodiment, a phase change non-volatile memory includes a number of memory cells. The memory cells include a phase change material which may transition between two memory states. The phase change material has different electrical properties in different states... | 09/12/2006 |
| 7018676 | Method and device for manufacturing ceramics, semiconductor device and piezoelectric device A method for manufacturing ceramics includes a step of forming a ceramic film on a substrate by mixing a fine particle of a raw material species which becomes at least part of raw materials for ceramics with an active species, and feeding the mixed fine particle and... | 03/28/2006 |
| 7002835 | Memory cell and semiconductor memory device Aspects of the invention can prevent delay in output timing of inverted data for each of ferroelectric capacitors, there can be provided NMOSs that can electrically connect upper electrodes of the ferroelectric capacitor with a plate line and electrically connect lo... | 02/21/2006 |
| 7002834 | Semiconductor integrated circuit At switching normal operation mode to low power mode, a first switch disconnects a virtual power supply line and a normal power supply line in response to activation of a switch control signal. The power supply voltage to a first circuit block connected to the virtu... | 02/21/2006 |
| 6900486 | Ferroelectric memory and method for manufacturing same Ferroelectric memory includes a hollow formed in a first insulation film. A lower electrode is formed in this hollow by sol-gel method including an application process due to a spin coat method. In this application process, a precursor solution is dripped on a surfa... | 05/31/2005 |
| 6856534 | Ferroelectric memory with wide operating voltage and multi-bit storage per cell Apparatus and methods are described for a multi-level FeRAM memory device. Using write and read circuits associated with the memory device, multiple data states may be written to and read from the ferroelectric memory device which are associated with a single polari... | 02/15/2005 |
| 6744681 | Fault-tolerant solid state memory A solid state memory device is fabricated by forming a level of the device; identifying defective areas in the level; and programming address logic of the level to avoid the defective areas in the level. ... | 06/01/2004 |
| 6711047 | Test circuit for an analog measurement of bit line signals of ferroelectric memory cells A test circuit is integrated in a ferroelectric memory component in order to make analog measurements of bit line signals of ferroelectric memory cells. The test circuit, when in a test mode, reads out analog signal values for the respective memory content of the ce... | 03/23/2004 |
| 6670659 | Ferroelectric data processing device In a ferroelectric data processing device for processing and/or storage of data with passive or electrical addressing a data-carrying medium is used in the form of a thin film (1) of ferroelectric material which by an applied electric field is polarized t... | 12/30/2003 |
| 6567331 | Avalanche breakdown memory devices and method of using the same A reverse bias voltage in combination with selective illumination can selectively write data into optical memory. The writing process can be completed quickly since parallel writing of data may be performed. The writing process generates an avalanche curr... | 05/20/2003 |
| 6232167 | Method of producing a ferroelectric thin film coated substrate A ferroelectric thin film coated substrate is obtained by a producing method of forming a crystalline thin film on a substrate by means of a MOCVD method at a substrate temperature at which crystal grows and of forming a ferroelectric thin film on the cry... | 05/15/2001 |
| 6136457 | Manganese oxide material having MnO3 as a matrix A manganese oxide material that can be used as a switching device or as a memory device or the like is formed of Mn-based oxide material. The Mn-based oxide material exhibits insulator-to-metal transitions induced by irradiating the material with laser li... | 10/24/2000 |
| 6025857 | Photosensitive member and electrostatic information recording method A photosensitive member which has an electrode provided on the front side and a photoconductive layer stacked on the electrode, the photosensitive member being disposed face-to-face with an electrostatic information recording medium that includes a charge... | 02/15/2000 |
| 5917747 | Digital memory element A digital memory element having three miniaturized electron tubes, which is faster and smaller by at least one further order of magnitude than known digital memory elements, can be produced through conventional and additive lithography. The digital memory... | 06/29/1999 |
| 5479384 | Optical storage device having a plurality of juxtaposed memory cells The invention relates to a read-write optical memory comprising a plurality of juxtaposed memory cells (11), each receiving a respective light beam (3). Each memory cell contains a storage medium (10), which includes a storage element (23) having stable o... | 12/26/1995 |
| 5453325 | Nonlinear optical waveguide multilayer structure A multilayer structure has an a nonlinear optical film epitaxially grown on an underlying buffer layer of substantially lower refractive index. The buffer layer itself is epitaxially grown on a single crystal substrate with an intermediate epitaxial elect... | 09/26/1995 |
| 5449933 | Ferroelectric thin film element A ferroelectric thin film element 1 constructed by forming a MgO thin film 3 oriented in the direction (100), a lower electrode 4 composed of an alloy thin film of a Ni--Cr--Al system oriented in the direction (100), a ferroelectric thin film 5 composed o... | 09/12/1995 |
| 5424974 | Optoelectric memories with photoconductive thin films Methods and apparatii are described for information storage in photoconductive film of single layer composition by irradiation of memory elements simultaneously with application of an electric field. Information is stored as trapped charge accumulations i... | 06/13/1995 |
| 5359565 | Optical memory An optical memory which allows for the high-speed random access of two-dimensional information. Portions of a light receiver made from material with photovoltaic or photoconductive effect are connected to corresponding portions of a ferroelectric liquid c... | 10/25/1994 |
| 5327373 | Optoelectronic memories with photoconductive thin films Methods and apparatii are described for information storage in photoconductive film of single layer composition by irradiation of memory elements simultaneously with application of an electric field. Information is stored as trapped charge accumulations i... | 07/05/1994 |
| 5309390 | Ferroelectric space charge capacitor memory A ferroelectric space charge capacitor memory device includes a pair of spaced first and second electrodes; a ferroelectric dielectric disposed between the electrodes; a coercive voltage supply for applying a coercive voltage to the dielectric to write th... | 05/03/1994 |
| 5309392 | Semiconductor IC device using ferroelectric material in data storage cells with light assisted state transition In a semiconductor memory array, each cell includes a semiconductor switching element and a capacitor with a ferroelectric material layer. The ferroelectric material layer is sandwiched between opposing electrodes and exhibits a polarization varied in res... | 05/03/1994 |
| 5179533 | Read/write optical memory An improved read/write optical disk is disclosed which is capable of being rewritten more than 106 times. The disk utilizes a storage medium in which data is stored by causing a localized region of the storage medium to assume one of two states... | 01/12/1993 |
| 5060191 | Ferroelectric memory A ferroelectric memory includes a ferroelectric thin film having first and second surfaces opposite to each other, a first electrode assembly having a plurality of stripe electrodes arranged in parallel on the first surface side of the ferroelectric thin ... | 10/22/1991 |
| 5051950 | Read/write optical memory An improved read/write optical disk is disclosed which is capable of being rewritten more than 106 times. The disk utilizes a storage medium in which data is stored as different polarization states in the same phase of the material. The preferr... | 09/24/1991 |
| 5003528 | Photorefractive, erasable, compact laser disk The invention comprises a data storage device in which ferroelectric photorefractive cells 12 susceptible to polarization for the storage of digital information are positioned on a carrier medium, preferably a disk 10, which supports the cells and allows ... | 03/26/1991 |
| 4785437 | Process for reading-out information from electrically polarizable data carriers by means of electron beams The information recorded in the data carrier in the form of a locally variable electric polarization is scanned and selected by means of an electron beam. For this purpose, the secondary electrons produced on the surface of the data carrier are used. The ... | 11/15/1988 |
| 4782227 | Image sensor with memory Image sensor with memory and, more especially, image sensor with reading by thermal effect. This sensor comprises mainly a layer of a photoconductive material and a layer of a transparent material, the impedance of which varies with the temperature, these... | 11/01/1988 |
| 4391901 | Photosensitivity enhancement of PLZT ceramics by positive ion implantation The photosensitivity of lead lanthanum zirconate titanate (PLZT) ceramic material used in high resolution, high contrast, and non-volatile photoferroelectric image storage and display devices is enhanced significantly by positive ion implantation of the P... | 07/05/1983 |
| 4250567 | Photovoltaic-ferroelectric beam accessed memory A three dimensional memory which is comprised of a plurality of stacked memory planes, each of which includes at least a continuous transparent photovoltaic-ferroelectric layer sandwiched between two continuous plane transparent electrodes. In one embodim... | 02/10/1981 |
| 4247914 | Optical memory with fiber optic light guide A three dimensional memory having an increased storage capacity. The memory block has a matrix of cylindrical cavities, each of which has a fiber optic light guide means disposed therein. Each light guide means is comprised of a cylindrical core having a ... | 01/27/1981 |
| 4158201 | Flat electro optic display panel and method of using same A flat PLZT plate is utilized to form erasable images thereon which images may be projected or viewed directly. One embodiment includes electrically conductive islands on one side of the PLZT plate which are surrounded by and electrically isolated from an... | 06/12/1979 |
| 4151604 | Image storage and optical read-out device having striped electrodes An image storage-reproduction recording element comprises a thin ceramic plate 2 in which adjacent ferroelectric and antiferroelectric phases can coexist, a first transparent electrode 6 overlying one surface of the plate, and, in order, a non-conductive ... | 04/24/1979 |
| 4139908 | Photovoltaic-ferroelectric data recorder A data recording and read-out apparatus and method in which a ferroelectric eramic substrate is remanently polarized to store information. Upon being illuminated, the substrate produces a photovoltaic voltage, which is detected to effect read-out. A disk o... | 02/13/1979 |
| 4124268 | Optical device for the storage and the selective erasure of information The object of the invention is to provide a device for storing and selectively erasing information in electrooptical photoconductive materials in which selective recording and erasure are obtained by identical optical devices which project the same distri... | 11/07/1978 |
