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| Number | Title | Issue Date |
| 7652907 | Electrochemical memory device A memory device including a stack of layers. At least one first active layer is based on a crystalline ionic and electronic conducting material capable of releasing and/or accepting at least one ionic species. At least one second active layer is based on a crystalli... | 01/26/2010 |
| 7317628 | Memory device and sense amplifier circuit with faster sensing speed and improved insensitivities to fabrication process variations A sense amplifier circuit with faster sensing speed and improved insensitivities to fabrication process variations (i.e., eliminated functional failures) is provided herein. According to one embodiment, the sense amplifier circuit associated with a row of memory cel... | 01/08/2008 |
| 7303939 | Electro- and electroless plating of metal in the manufacture of PCRAM devices Non-volatile, resistance variable memory devices, integrated circuit elements, and methods of forming such devices are provided. According to one embodiment of a method of the invention, a memory device can be fabricated by depositing a chalcogenide material onto a ... | 12/04/2007 |
| 7295366 | Optical integrated device and optical module An optical integrated device includes a plurality of input optical waveguides connected respectively to a plurality of input ports provided on one end face of the optical integrated device, a single output optical waveguide connected to an output port, an optical co... | 11/13/2007 |
| 7282387 | Electro- and electroless plating of metal in the manufacture of PCRAM devices Non-volatile, resistance variable memory devices, integrated circuit elements, and methods of forming such devices are provided. According to one embodiment of a method of the invention, a memory device can be fabricated by depositing a chalcogenide material onto a ... | 10/16/2007 |
| 7264988 | Electro-and electroless plating of metal in the manufacture of PCRAM devices Non-volatile, resistance variable memory devices, integrated circuit elements, and methods of forming such devices are provided. According to one embodiment of a method of the invention, a memory device can be fabricated by depositing a chalcogenide material onto a ... | 09/04/2007 |
| 7236388 | Driving method of variable resistance element and memory device A variable resistance element is configured to be provided with a perovskite-type oxide between a first electrode and a second electrode, of which electric resistance between the first electrode and the second electrode is changed by applying a voltage pulse of a pr... | 06/26/2007 |
| 7233537 | Thin film magnetic memory device provided with a dummy cell for data read reference Normal memory cells and dummy cells are arranged continuously in a memory array. In a data read operation, first and second data lines are connected to the selected memory cell and the dummy cell, respectively, and are supplied with operation currents of a different... | 06/19/2007 |
| 7227169 | Programmable surface control devices and method of making same Programmable surface control devices whose physical features, such as surface characteristics and mass distribution, are controlled by the presence or absence of an electrodeposition of metal and/or metal ions from a solid solution upon application of a suitable ele... | 06/05/2007 |
| 7199444 | Memory device, programmable resistance memory cell and memory array A method of metal doping a chalcogenide material includes forming a metal over a substrate. A chalcogenide material is formed on the metal. Irradiating is conducted through the chalcogenide material to the metal effective to break a chalcogenide bond of the chalcoge... | 04/03/2007 |
| 7192649 | Passivation layer on aluminum surface and method thereof A protective passivation layer is formed on the surface of an aluminum mass, such as bare aluminum particles, creating a protected aluminum mass. Formation of the protective layer onto the aluminum mass may occur from an in-situ process. ... | 03/20/2007 |
| 7161167 | Lateral phase change memory A lateral phase change cell may be formed over a semiconductor substrate. The lateral cell, in some embodiments, may be exposed to light so that the same cell may be addressed by both optical and electrical signals. ... | 01/09/2007 |
| 7109056 | Electro-and electroless plating of metal in the manufacture of PCRAM devices Non-volatile, resistance variable memory devices, integrated circuit elements, and methods of forming such devices are provided. According to one embodiment of a method of the invention, a memory device can be fabricated by depositing a chalcogenide material onto a ... | 09/19/2006 |
| 7107252 | Pattern recognition utilizing a nanotechnology-based neural network A pattern recognition system, comprising a neural network formed utilizing nanotechnology and a pattern input unit, which communicates with the neural network, wherein the neural network processes data input via the pattern input unit in order to recognize data patt... | 09/12/2006 |
| 7039619 | Utilized nanotechnology apparatus using a neutral network, a solution and a connection gap An apparatus for maintaining components in neural network formed utilizing nanotechnology is described herein. A connection gap can be formed between two terminals. A solution comprising a melting point at approximately room temperature can be provided, wherein the ... | 05/02/2006 |
| 7026639 | Phase change memory element capable of low power operation and method of fabricating the same Provided is a phase-change element capable of operating with low power consumption and a method of manufacturing the same. The phase-change element comprises a first electrode used as a heating layer, a second electrode, which is laterally disposed adjacent to the f... | 04/11/2006 |
| 7022555 | Methods of forming a semiconductor memory device A method of metal doping a chalcogenide material includes forming a metal over a substrate. A chalcogenide material is formed on the metal. Irradiating is conducted through the chalcogenide material to the metal effective to break a chalcogenide bond of the chalcoge... | 04/04/2006 |
| 7015494 | Assemblies displaying differential negative resistance The invention includes a device displaying differential negative resistance characterized by a current-versus-voltage profile having a peak-to-valley ratio of at least about 9. The invention also includes a semiconductor construction comprising a substrate, and a fi... | 03/21/2006 |
| 6998312 | Microelectronic programmable device and methods of forming and programming the same A microelectronic programmable structure and methods of forming and programming the structure are disclosed. The programmable structure generally include an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applyin... | 02/14/2006 |
| 6995649 | Variable resistor apparatus formed utilizing nanotechnology A variable resistor apparatus includes a plurality of nanoparticles disposed between two terminals, wherein the plurality of nanoparticles provides an electrical resistance. An electric field applied to the plurality of nanoparticles across the two terminals results... | 02/07/2006 |
| 6994947 | Photochemical hole burning media A photochemical hole burning medium is composed of a material in which a rare earth complex and a reducing agent is dispersed in a solid matrix. The rare earth complex may be at least one complex selected from the group consisting of a europium (III) crown ether com... | 02/07/2006 |
| 6951805 | Method of forming integrated circuitry, method of forming memory circuitry, and method of forming random access memory circuitry A method of forming memory circuitry sequentially includes forming a plurality of metal interconnect lines over a semiconductive substrate. A plurality of memory cell storage devices comprising voltage or current controlled resistance setable semiconductive material... | 10/04/2005 |
| 6949402 | Method of forming a non-volatile resistance variable device A method of metal doping a chalcogenide material includes forming a metal over a substrate. A chalcogenide material is formed on the metal. Irradiating is conducted through the chalcogenide material to the metal effective to break a chalcogenide bond of the chalcoge... | 09/27/2005 |
| 6940745 | Programmable microelectronic devices and methods of forming and programming same A microelectronic programmable structure and methods of forming and programming the structure The programmable structure generally includes an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying a bias acros... | 09/06/2005 |
| 6922353 | Memory for storing information A memory apparatus has a plurality of first electrodes and at least one second electrode separated by an electrolyte solution. Information may be recorded by causing an electrical current to flow between a selected of the first electrodes and the second electrode to... | 07/26/2005 |
| 6867408 | Erasable/rewritable optical data storage with photorefractive polymers A method of erasable/rewritable optical data storage is provided in which a laser beam from a laser (10) operated in either a pulsed or continuous wave mode is focussed by an optical system (11-18) onto a photorefractive polymeric material (32) ... | 03/15/2005 |
| 6865117 | Programming circuit for a programmable microelectronic device, system including the circuit, and method of forming the same A circuit for programming a microelectronic device is disclosed. The circuit is configured to provide a reversible bias across the microelectronic device to perform erase and write functions. One configuration of the programming circuit includes one or more inputs c... | 03/08/2005 |
| 6280904 | Photo-chemical generation of stable fluorescent derivatives of rhodamine B The present invention relates to the field of optical recording materials, in particular, fluorescent compounds and matrices suitable for use in optical memory systems, including three dimensional optical memory systems for READ ONLY MEMORY (ROM). In part... | 08/28/2001 |
| 6027855 | Photo-chemical generation of stable fluorescent derivatives of Rhodamine B The present invention relates to the field of optical recording materials, in particular, fluorescent compounds and matrices suitable for use in optical memory systems, including three dimensional optical memory systems for READ ONLY MEMORY (ROM). In part... | 02/22/2000 |
| 5914893 | Programmable metallization cell structure and method of making same A programmable metallization cell ("PMC") comprises a fast ion conductor such as a chalcogenide-metal ion and a plurality of electrodes (e.g., an anode and a cathode) disposed at the surface of the fast ion conductor and spaced a set distance apart from e... | 06/22/1999 |
| 5814265 | Method and apparatus for production of three-dimensional objects by stereolithography A system for generating three-dimensional objects by creating a cross-sectional pattern of the object to be formed at a selected surface of a fluid medium capable of altering its physical state in response to appropriate synergistic stimulation by impingi... | 09/29/1998 |
| 5761115 | Programmable metallization cell structure and method of making same A programmable metallization cell ("PMC") comprises a fast ion conductor such as a chalcogenide-metal ion and a plurality of electrodes (e.g., an anode and a cathode) disposed at the surface of the fast ion conductor and spaced a set distance apart from e... | 06/02/1998 |
| 5609813 | Method of making a three-dimensional object by stereolithography An improved method for stereolithographically making an object by alternating the order in which similar sets of vectors are exposed over two or more layers. In another method, a pattern of tightly packed hexagonal tiles are drawn. Each tile is isolated f... | 03/11/1997 |
| 5609812 | Method of making a three-dimensional object by stereolithography An improved method for stereolithographically making an object by alternating the order in which similar sets of vectors are exposed over two or more layers. In another method, a pattern of tightly packed hexagonal tiles are drawn. Each tile is isolated f... | 03/11/1997 |
| 5597520 | Simultaneous multiple layer curing in stereolithography A method and apparatus for making high resolution objects by stereolithography utilizing low resolution materials which are limited by their inability to form unsupported structures of desired thinness and/or their inability to form coatings of desired th... | 01/28/1997 |
| 5573721 | Use of a support liquid to manufacture three-dimensional objects A system is provided for producing a three dimensional object from a reactive liquid medium capable of being solidified. The object is constructed from many successive layers of the solidified reactive liquid medium when subjected to appropriate synergist... | 11/12/1996 |
| 5573722 | Method and apparatus for production of three-dimensional objects by stereolithography A system for generating three-dimensional objects by creating a cross-sectional pattern of the object to be formed at a selected surface of a fluid medium capable of altering its physical state in response to appropriate synergistic stimulation by impingi... | 11/12/1996 |
| 5571471 | Method of production of three-dimensional objects by stereolithography A system for generating three-dimensional objects by creating a cross-sectional pattern of the object to be formed at a selected surface of a fluid medium capable of altering its physical state in response to appropriate synergistic stimulation by impingi... | 11/05/1996 |
| 5569431 | Method and apparatus for production of three-dimensional objects by stereolithography A system for generating three-dimensional objects by creating a cross-sectional pattern of the object to be formed at a selected surface of a fluid medium capable of altering its physical state in response to appropriate synergistic stimulation by impingi... | 10/29/1996 |
| 5556590 | Apparatus for production of three-dimensional objects by stereolithography A system for generating three-dimensional objects by creating a cross-sectional pattern of the object to be formed at a selected surface of a fluid medium capable of altering its physical state in response to appropriate synergistic stimulation by impingi... | 09/17/1996 |
