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"That the automobile has practically reached the limit of its development is suggested by the fact that during the past year no improvements of a radical nature have been introduced."
Scientific American ; Jan. 2 edition, 1909
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| Number | Title | Issue Date |
| 7405920 | Flat type capacitor-use polypropylene film and flat type capacitor using it A flat type capacitor-use polypropylene film having a Ad(thickness determined by micrometer method—thickness determined by weighing method) of 0.05-0.2 μm and a lengthwise shrinkage dimensional change rate of 3% or less, or a flat type capacitor-use polypropylene... | 07/29/2008 |
| 7374586 | Solid electrolytic capacitor, fabrication method thereof, and coupling agent utilizing in the same A solid electrolytic capacitor, fabrication method, and coupling agent utilized in the same. The capacitor includes a valve metal layer, an oxide dielectric layer on at least a part of the surface of the valve metal layer, a coupling layer having a molecular chain w... | 05/20/2008 |
| 7294905 | Thin film capacitor and electronic circuit component A thin film capacitor comprising a lower electrode formed on a predetermined surface, a dielectric layer formed on the lower electrode, and an upper electrode formed on the dielectric layer, wherein the end portion of the lower electrode is further covered by an ins... | 11/13/2007 |
| 7294544 | Method of making a metal-insulator-metal capacitor in the CMOS process A method for fabricating an improved metal-insulator-metal capacitor is achieved. An insulating layer is provided overlying conducting lines on a semiconductor substrate. Via openings through the insulating layer to the conducting lines are filled with metal plugs. ... | 11/13/2007 |
| 7282648 | Capacitor-embedded PCB having blind via hole and method of manufacturing the same The present invention relates to a capacitor-embedded PCB and a method of manufacturing the same. The capacitor-embedded PCB includes a dielectric layer, a lower electrode layer formed under the dielectric layer, and an upper electrode layer formed on the dielectric... | 10/16/2007 |
| 7271114 | Perovskite ceramic powder and electronic component using same and manufacturing methods thereof A ceramic powder having a perovskite structure is manufactured by synthesizing a ceramic powder by a dry synthesis process and then heat-treating the synthesized ceramic powder in a solution. The dry synthesis method includes a solid phase synthesis method, an oxala... | 09/18/2007 |
| 7262098 | Manufacturing process of a semiconductor non-volatile memory cell A process for manufacturing a non-volatile memory cell having at least one gate region, the process including the steps of depositing a first dielectric layer onto a semiconductor substrate; depositing a first semiconductor layer onto the first dielectric layer to f... | 08/28/2007 |
| 7221010 | Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors Silicon carbide metal-oxide semiconductor field effect transistors (MOSFETs) may include an n-type silicon carbide drift layer, a first p-type silicon carbide region adjacent the drift layer and having a first n-type silicon carbide region therein, an oxide layer on... | 05/22/2007 |
| 7205599 | Devices having improved capacitance A capacitor formed by a process using only two deposition steps and a dielectric formed by oxidizing a metal layer in an electrolytic solution. The capacitor has first and second conductive plates and a dielectric is formed from the first conductive plate. ... | 04/17/2007 |
| 7160781 | Transistor device and methods of manufacture thereof Methods of forming transistor devices and structures thereof are disclosed. A first dielectric material is formed over a workpiece, and a second dielectric material is formed over the first dielectric material. The workpiece is annealed, causing a portion of the sec... | 01/09/2007 |
| 7126205 | Devices having improved capacitance and methods of their fabrication A capacitor formed by a process using only two deposition steps and a dielectric formed by oxidizing a metal layer in an electrolytic solution. The capacitor has first and second conductive plates and a dielectric is formed from the first conductive plate. ... | 10/24/2006 |
| 7123969 | Lead having one or more low polarization electrodes A low-polarization electrode for use with an implantable lead. The low polarization electrode comprises a base substrate of a conductive material, an intermediate layer of a high dielectric layer over the base substrate, and a polarization-reducing coating over the ... | 10/17/2006 |
| 7115461 | High permittivity silicate gate dielectric A field effect semiconductor device comprising a high permittivity silicate gate dielectric and a method of forming the same are disclosed herein. The device comprises a silicon substrate 20 having a semiconducting channel region 24 formed therein. A m... | 10/03/2006 |
| 7087182 | Process of forming an electrically erasable programmable read only memory with an oxide layer exposed to hydrogen and nitrogen The present invention provides a flash memory integrated circuit and a method of fabricating the same. A tunnel dielectric in an erasable programmable read only memory (EPROM) device is nitrided with a hydrogen-bearing compound, particularly ammonia. Hydrogen is thu... | 08/08/2006 |
| 7082026 | On chip capacitor A high capacity silicon capacitor formed on an integrated circuit substrate includes a metal portion on the substrate; a silicon nitride (SiN) portion sputtered on the metal; a silicon (Si) portion sputtered on the silicon nitride portion, another SiN layer and fina... | 07/25/2006 |
| 7074643 | Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same Silicon carbide semiconductor devices and methods of fabricating silicon carbide semiconductor devices are provided by successively etching a mask layer to provide windows for formation of a source region or a first conductivity type, a buried silicon carbide region... | 07/11/2006 |
| 7067176 | Method of fabricating an oxide layer on a silicon carbide layer utilizing an anneal in a hydrogen environment Silicon carbide structures are fabricated by fabricating a nitrided oxide layer on a layer of silicon carbide and annealing the nitrided oxide layer in an environment containing hydrogen. Such a fabrication of the nitrided oxide layer may be provided by forming the ... | 06/27/2006 |
| 7068492 | Process for the constrained sintering of a pseudo-symmetrically configured low temperature cofired ceramic structure This invention relates to a process which produces flat, distortion-free, zero-shrink, low-temperature co-fired ceramic (LTCC) bodies, composites, modules or packages from precursor green (unfired) laminates of three or more different dielectric tape chemistries tha... | 06/27/2006 |
| 7052119 | Liquid ejection head, and method of manufacturing the same A chamber formation plate has a first face formed with a plurality of recesses arranged in a first direction at a fixed pitch such that each of the recesses is communicated with, via a through hole, a second face which is an opposite face of the first face. The cham... | 05/30/2006 |
| 7022378 | Nitrogen passivation of interface states in SiO/SiC structures A nitrided oxide layer on a silicon carbide layer is processed by annealing the nitrided oxide layer in a substantially oxygen-free nitrogen containing ambient. The anneal may be carried out at a temperature of greater than about 900° C., for example, a temperature... | 04/04/2006 |
| 7015563 | On chip capacitor A high capacity silicon capacitor formed on an integrated circuit substrate includes a metal portion on the substrate; a silicon nitride (SiN) portion sputtered on the metal; a silicon (Si) portion sputtered on the silicon nitride portion, another SiN layer and fina... | 03/21/2006 |
| 7005722 | RC terminator and production method therefor A thin-film RC circuit element suitable for a transmission line termination circuit is prepared by a process wherein 1) a first metal layer of an anodizable metal is deposited on a substrate; 2) the exposed surface... | 02/28/2006 |
| 6998322 | Methods of fabricating high voltage, high temperature capacitor and interconnection structures Capacitors and interconnection structures for silicon carbide are provided having an oxide layer, a layer of dielectric material and a second oxide layer on the layer of dielectric material. The thickness of the oxide layers may be from about 0.5 to about 33 percent... | 02/14/2006 |
| 6995419 | Semiconductor constructions having crystalline dielectric layers The invention includes semiconductor constructions. In one implementation, semiconductor construction includes a first conductive material. A first layer of a dielectric material is over the first conductive material. A second layer of the dielectric material is on ... | 02/07/2006 |
| 6979863 | Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same Silicon carbide semiconductor devices and methods of fabricating silicon carbide semiconductor devices have a silicon carbide DMOSFET and an integral silicon carbide Schottky diode configured to at least partially bypass a built in diode of the DMOSFET. The Schottky... | 12/27/2005 |
| 6956238 | SILICON CARBIDE POWER METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS HAVING A SHORTING CHANNEL AND METHODS OF FABRICATING SILICON CARBIDE METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS HAVING A SHORTING CHANNEL Silicon carbide metal-oxide semiconductor field effect transistors (MOSFETs) and methods of fabricating silicon carbide MOSFETs are provided. The silicon carbide MOSFETs have an n-type silicon carbide drift layer, spaced apart p-type silicon carbide regions in the n... | 10/18/2005 |
| 6955973 | Method for forming a semiconductor device A metal film containing a metal is formed on a silicon layer, and then a surface portion of the silicon layer and the metal film are oxidized so as to form a silicon oxide film containing the metal in a surface portion of the silicon layer. ... | 10/18/2005 |
| 6947276 | Process for producing laminated ceramic capacitor The present invention relates to a method of manufacturing a multilayer ceramic capacitor, having the steps of: (a) alternately layering internal electrodes and ceramic green sheets containing a ceramic material having barium titanate to form a laminated body; (b) s... | 09/20/2005 |
| 6943108 | Interposer capacitor built on silicon wafer and joined to a ceramic substrate An interposer, located between an integrated circuit having power, ground and signal connections and a ceramic substrate having power, ground and signal connections, that includes an oxide layer formed on a polished surface of a silicon substrate, a thin film dielec... | 09/13/2005 |
| 6917509 | Single layer capacitor with dissimilar metallizations A single layer ceramic capacitor for wire bonding or solder or epoxy attachment wherein a bottom metallization is of a lesser purity than a top metallization whereby the bottom metallization may be effectively soldered without leaching of the metal and the top metal... | 07/12/2005 |
| 6839219 | Laminate for forming capacitor layer and method for manufacturing the same An object of the present invention is to provide a laminate for forming a capacitor layer for a printed wiring board which is capable of ensuring a higher capacitance and an inner layer core material using the laminate for example. In order to achieve this object, a... | 01/04/2005 |
| 6833322 | Apparatuses and methods for depositing an oxide film Methods and apparatuses for forming an oxide film. The method includes depositing an oxide film on a substrate using a process gas mixture that comprises a silicon source gas, an oxygen gas, and a hydrogen gas, and a process temperature between 800° C. and 1300° C... | 12/21/2004 |
| 6654227 | Ceramic electronic parts and method for manufacturing the same A ceramic electronic part includes a ceramic assemblage containing laminated plural ceramic sheets, plural inner electrodes formed between the ceramic sheets and containing Ni as a major component, and outer electrodes electrically connected to the inner ... | 11/25/2003 |
| 6577491 | Capacitor array A capacitor array includes four internal electrodes and internal electrode extraction sections which are in electrical conduction with the corresponding internal electrodes and have predetermined widths which are symmetrically arranged relative to a long-... | 06/10/2003 |
| 6572793 | Method of producing ceramic composition and method of producing electronic device A method of producing an electronic device including a dielectric layer includes a dielectric ceramic composition containing a main component expressed by a formula of {(Sr1-x Cax)O}m.(Ti1-y Zry)O | 06/03/2003 |
| 6507478 | Device having a crystalline thin film of complex compound It is an object of the present invention to provide a device having a crystalline oxide layer of complex compound which can form a crystalline thin film with high orientation. The lower electrode 13 comprises tantalum layer 11, titanate layer 12 and plati... | 01/14/2003 |
| 6440591 | Ferroelectric thin film coated substrate, producing method thereof and capacitor structure element using thereof A ferroelectric thin film coated substrate is obtained by a producing method of forming a metal oxide buffer layer on a substrate, forming a first crystalline ferroelectric thin film thereon by means of a MOCVD method and forming a second ferroelectric th... | 08/27/2002 |
| 6381118 | Ceramic electronic component having electronic component containing cuprous oxide A ceramic electronic component comprising external electrodes having first electrode layers containing at least a noble metal, cuprous oxide, and glass ingredient electrically connected to internal electrodes having a noble metal. As the ceramic electroni... | 04/30/2002 |
| 6313491 | Semiconductor memory having cell including transistor and ferroelectric capacitor An upper electrode of an FRAM capacitor is connected to a diffusion layer on the surface of a semiconductor substrate via a contact hole, second interconnecting layer, contact hole, first interconnecting layer, and contact hole. The first interconnecting ... | 11/06/2001 |
| 6312816 | A-site- and/or B-site-modified PbZrTiO3 materials and (Pb, Sr, Ca, Ba, Mg) (Zr, Ti, Nb, Ta)O3 films having utility in ferroelectric random access memories and high performance thin film microactuators A modified PbZrTiO3 perovskite crystal material thin film, wherein the PbZrTiO3 perovskite crystal material includes crystal lattice A-sites and B-sites at least one of which is modified by the presence of a substituent selected from... | 11/06/2001 |
