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...that a workman who left the soap mixing machine on too long was responsible for making Ivory Soap? He was so embarrassed by his mistake that he threw the mess in a stream. Imagine his dismay when the evidence of his error floated to the surface! Result: Ivory soap, the soap that floats.
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| Number | Title | Issue Date |
| 8107221 | Dielectric ceramic and capacitor A dielectric ceramic includes crystal grains containing barium titanate as a main component, magnesium, a rare-earth element, and manganese, wherein the crystal grains have a cubic crystal structure; and the dielectric ceramic contains, per mole of barium, 0.033 to ... | 01/31/2012 |
| 7580242 | Dielectric ceramic composition and electronic device The invention aims at providing a dielectric ceramic composition including BamTiO2+m where “m” satisfies 0.99≦m≦1.01 and BanZrO2+n where “n” satisfies 0.99≦n≦1.01, an oxide of Mg, an oxide of R where R is a... | 08/25/2009 |
| 7433173 | Multilayer ceramic capacitor and method for manufacturing the same Provided is a multilayer ceramic capacitor having a capacitor body formed by alternately laminating a dielectric layer and an internal electrode layer, and an external electrode formed on both ends of the capacitor body. The dielectric layer has at least two type of... | 10/07/2008 |
| 7397649 | Dielectric ceramic and multilayer ceramic capacitor A dielectric ceramic includes a compound represented by the general formula: (Ba1-tCat)m(Ti1-u-xZruCux)O3 (where 0.96≦m≦1.02, 0.001≦x≦0.03, 0≦t≦0.1, and 0≦u≦0.06) as a prima... | 07/08/2008 |
| 7365958 | Dielectric ceramics, multilayer ceramic capacitor and method for manufacturing the same Crystal grains mainly composed of barium titanate have a mean grain size of not more than 0.2 μm. The volume per unit cell V that is represented by a product of lattice constant (a, b, c) figured out from the X-ray diffraction pattern of the crystal grains is not m... | 04/29/2008 |
| 7358207 | Dielectric ceramic composition and multilayer electronic component A dielectric ceramic composition of the present invention is represented by the general formula, MgxSiO2+x+aSryTiO2+y, wherein x, y and a satisfy the relations of 1.70≦x≦1.99, 0.98≦y≦1.02, and 0.05≦a≦0.40, resp... | 04/15/2008 |
| 7351676 | Dielectric porcelain composition, multilayer ceramic capacitor, and electronic component A dielectric ceramic composition of the present invention includes 100 parts by mole of BaTiO3, x1 parts by mole of MnO, x2 parts by mole of Cr2O3, x3 parts by mole of Y2O3 and/o... | 04/01/2008 |
| 7349196 | Composite distributed dielectric structure A composite distributed dielectric structure includes one or more conductor layers, one or more dielectric layers distributed on the conductor layers, and one or more conductor traces distributed on the dielectric layers. One or more dielectric plates can be further... | 03/25/2008 |
| 7339781 | Electronic component and electronic device An electronic component having an element body, and a terminal electrode disposed on the element body. The terminal electrode has a first electrode layer, a second electrode layer, and a third electrode layer. The first electrode layer is formed on an external surfa... | 03/04/2008 |
| 7336476 | Dielectric ceramic composition for low temperature sintering and multilayer ceramic capacitor using the same The invention relates to a dielectric ceramic composition, which can be sintered at a low temperature as well as achieve a high dielectric constant with excellent thermal stability, and a multilayer ceramic capacitor using the same. The dielectric ceramic compositio... | 02/26/2008 |
| 7332357 | Method for fabricating semiconductor device A conduction film 36 is formed in a larger design thickness value on a ferroelectric film 32 by MOCVD, and the entire surface of the conduction film 36 is anisotropically etched back, whereby the surface morphology of the conduction film 36 | 02/19/2008 |
| 7329567 | Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage Vertical field effect transistors having a channel region defined by at least one semiconducting nanotube and methods for fabricating such vertical field effect transistors by chemical vapor deposition using a spacer-defined channel. Each nanotube is grown by chemic... | 02/12/2008 |
| 7320057 | Memory management system and method for a mobile device In accordance with the teachings described herein, systems and methods are provided for managing memory on a mobile device. A maximum amount of available data storage memory may be allocated for storing data for each of a plurality of software applications loaded on... | 01/15/2008 |
| 7310216 | EMI filter terminal assembly with wire bond pads for human implant applications An electro-magnetic interference filter terminal assembly for active implantable medical devices includes a structural pad in the form of a substrate or attached wire bond pad, for convenient attachment of wires from the circuitry inside the implantable medical devi... | 12/18/2007 |
| 7307828 | Electronic device, dielectric ceramic composition, and method of production of the same A dielectric ceramic position having at least a main component including barium titanate, a first subcomponent including at least one type of compound selected from MgO, CaO, BaO, a SrO, a second subcomponent including at least one type of compound selected from Al | 12/11/2007 |
| 7294598 | Dielectric oxide materials A material made of a dielectric oxide of type Ca0.25Cu0.75TiO3 having a dielectric constant greater than 3,000. ... | 11/13/2007 |
| 7295422 | Electronic device and the production method An electronic device having an element body, wherein dielectric layers and internal electrode layers are alternately stacked, wherein a hetero phase is formed in the dielectric layers and/or the internal electrode layers; and the hetero phase includes a Mg element a... | 11/13/2007 |
| 7288807 | Semiconductor device with capacitor element After a capacitor forming portion is formed on a semiconductor substrate by patterning an insulating film and a silicon film, a sidewall insulating film is formed on each of the side surfaces of the capacitor forming portion. Then, the insulating film is selectively... | 10/30/2007 |
| 7288808 | Capacitor constructions with enhanced surface area A capacitor fabrication method may include forming a first capacitor electrode over a substrate, the first electrode having an inner surface area per unit area and an outer surface area per unit area that are both greater than an outer surface area per unit area of ... | 10/30/2007 |
| 7276130 | Production method of multilayer ceramic electronic device A method of producing a multilayer ceramic electronic device, having a firing step for firing a pre-firing element body wherein a plurality of dielectric layers and internal electrode layers containing a base metal are alternately arranged, characterized in that the... | 10/02/2007 |
| 7277269 | Refractory metal nickel electrodes for capacitors A capacitor with conductive layers arranged in parallel relationship. The conductive layers have nickel alloyed or add mixed with a refractory metal in an amount sufficient to raise the melting temperature of said conductive layer at least 1° C. above the melting t... | 10/02/2007 |
| 7271114 | Perovskite ceramic powder and electronic component using same and manufacturing methods thereof A ceramic powder having a perovskite structure is manufactured by synthesizing a ceramic powder by a dry synthesis process and then heat-treating the synthesized ceramic powder in a solution. The dry synthesis method includes a solid phase synthesis method, an oxala... | 09/18/2007 |
| 7271115 | Dielectric ceramic composition and monolithic ceramic capacitor A dielectric ceramic composition contains a substance represented by general formula 100(Ba1−xCax)mTiO3+aMnO+bCuO+cROn (wherein the coefficients 100, a, b, and c each represent mols; R represents at least one ... | 09/18/2007 |
| 7266882 | Method of manufacturing a miniaturized three- dimensional electric component Manufacturing of miniaturized three-dimensional electric components are presented, as well as components manufactured by the methods. The manufacturing methods comprise micro-replication of at least one master structure, e.g. via a mould structure, in at least one p... | 09/11/2007 |
| 7265072 | Dielectric ceramic composition and electronic device A dielectric ceramic composition includes a main component including a dielectric oxide expressed by a composition formula of {(Ca1-xSrx)O}m.(Zr1-yTiy)O2, wherein m, x and y indicating composition mol... | 09/04/2007 |
| 7259957 | Laminated ceramic capacitor The capacitor 10 (laminated ceramic capacitor) of the invention comprises a capacitor body 11 wherein internal electrodes 12 (electrodes) and a dielectric layer 14 are alternately laminated, and external electrodes 15 are provided ... | 08/21/2007 |
| 7256442 | Three-layer lower capacitor electrode A method for forming the lower electrode of a capacitor used for fabricating a 1-Gbit or above DRAM, using a material having a high dielectric constant, is used in a method for manufacturing a storage capacitor of a VLSI semiconductor device. The lower electrode, wh... | 08/14/2007 |
| 7242571 | Dielectric ceramic, manufacturing method therefor, and multilayer ceramic capacitor A dielectric ceramic is obtained by the steps of obtaining a reaction product composed of a barium titanate base composite oxide represented by the general formula (Ba1−h−i−mCahSriGdm)k(Ti1−y−j−nZr | 07/10/2007 |
| 7239501 | Dielectric ceramic composition and laminated ceramic capacitor Provided is a dielectric ceramic composition represented by the chemical composition formula: 100 (Ba1−xCax)mTiO3+aMnO+bCuO+cSiO2+dRe2O3 (wherein coefficients 100, a, b, c, and d each rep... | 07/03/2007 |
| 7233071 | Low-k dielectric layer based upon carbon nanostructures A low-k dielectric material for use in the manufacture of semiconductor devices, semiconductor structures using the low-k dielectric material, and methods of forming such dielectric materials and fabricating such structures. The low-k dielectric material comprises c... | 06/19/2007 |
| 7230817 | Y5V dielectric composition Multilayer ceramic chip capacitors which satisfy Y5V requirements and which are compatible with reducing atmosphere sintering conditions so that non-noble metals such as nickel, copper, and alloys thereof may be used for internal and external electrodes are made in ... | 06/12/2007 |
| 7224040 | Multi-level thin film capacitor on a ceramic substrate In accordance with the teachings described herein, a multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same are provided. The multi-level thin film capacitor (MLC) may include at least one high permittivity dielectric layer betwe... | 05/29/2007 |
| 7224573 | Capacitor having a dielectric ceramic layer A capacitor includes at least two pairs of opposing electrode layers and an intermediate dielectric layer. The intermediate dielectric layer includes a ceramic material that contains at least two different components existing in separate phases. The at least two dif... | 05/29/2007 |
| 7220691 | Dielectric ceramic composition and electronic device A dielectric ceramic composition comprising 100 moles of barium titanate as the main component, and furthermore comprising with respect to 100 moles of the main component 0.1 to 3 moles of a first subcomponent including a magnesium oxide, 0.01 to 0.5 mole (note that... | 05/22/2007 |
| 7221237 | Frequency tunable device A frequency tunable device includes a substrate, and a capacitor structure supported by the substrate and including a ferroelectric film and first and second electrodes. The ferroelectric film has two opposite sides, and is made from a ferroelectric material having ... | 05/22/2007 |
| 7192827 | Methods of forming capacitor structures The invention includes a method of forming a capacitor structure. A first electrical node is formed, and a layer of metallic aluminum is formed over the first electrical node. Subsequently, an entirety of the metallic aluminum within the layer is transformed into on... | 03/20/2007 |
| 7190567 | Capacitor and its manufacturing method, and semiconductor device A capacitor is provided having a structure in which an insulation film is interposed between a first electrode and a second electrode. The insulation film includes SrTiO3 as a main component, and at least one of Si and Ge added thereto. ... | 03/13/2007 |
| 7180141 | Ferroelectric capacitor with parallel resistance for ferroelectric memory Ferroelectric memory cells (3) are presented, in which a cell resistor (R) is integrated into the cell capacitor (C) to inhibit charge accumulation or charge loss at the cell storage node (SN) when the cell (3) is not being accessed while avoiding sign... | 02/20/2007 |
| 7172806 | Monolithic ceramic electronic component A sintered ceramic has a porosity of greater than about 30 percent and less than about 80 percent by volume. Pores are filled with an epoxy resin. A filling factor of the epoxy resin is about 40 percent by volume or more. A monolithic ceramic electronic component ha... | 02/06/2007 |
| 7166883 | Capacitor structures The invention includes a method of forming a capacitor structure. A first electrical node is formed, and a layer of metallic aluminum is formed over the first electrical node. Subsequently, an entirety of the metallic aluminum within the layer is transformed into on... | 01/23/2007 |
