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| Number | Title | Issue Date |
| 7372673 | Magnetoresistive effect transducer having longitudinal bias layer and control layer directly connected to free layer In a magnetoresistive effect transducer including a pinning layer, a pinned layer, a free layer and a non-magnetic layer inserted between the pinned layer and the free layer, a longitudinal bias layer is connected directly to a part of the free layer to apply a bias... | 05/13/2008 |
| 7330339 | Structure providing enhanced self-pinning for CPP GMR and tunnel valve heads A magnetic head having improved self-pinning. The head includes a sensor having an antiparallel (AP) pinned layer structure, where the AP pinned layer structure includes at least two pinned layers having magnetic moments that are self-pinned antiparallel to each oth... | 02/12/2008 |
| 7312957 | Current-perpendicular-to-the-plane structure magnetoresistive element having sufficient sensitivity A current-perpendicular-to-the-plane (CPP) structure magnetoresistive element includes an electrode layer contacting a magnetoresistive film. A low resistance region is defined to extend rearward along the boundary of the magnetoresistive film from the front end exp... | 12/25/2007 |
| 7301734 | Longitudinal bias structure with improved magnetic stability A GMR sensor having improved longitudinal biasing is provided as is a method of forming it. The improved biasing is provided by longitudinal biasing structures in which a soft magnetic layer is interposed between a hard magnetic biasing layer and the lateral edge of... | 11/27/2007 |
| 7289303 | Spin valve sensors having synthetic antiferromagnet for longitudinal bias Magnetoresistive (MR) sensors are disclosed having mechanisms for reducing edge effects such as Barkhausen noise. The sensors include a pinned layer and a free layer with an exchange coupling layer adjoining the free layer, and a ferromagnetic layer having a fixed m... | 10/30/2007 |
| 7280324 | Magnetoresistive sensor having improved antiparallel tab free layer biasing A magnetoresistive sensor having improved free layer biasing and track width control. ... | 10/09/2007 |
| 7267997 | Process for forming magnetic memory structures An exemplary method for making a memory structure comprises forming a first ferromagnetic layer, forming a spacer layer above the first ferromagnetic layer, forming a second ferromagnetic layer above the spacer layer by applying a first deposition process to form a ... | 09/11/2007 |
| 7268985 | Magnetic head having a layered hard bias layer exhibiting reduced noise A magnetic head having an improved read head structure. The read head includes a free magnetic layer with hard bias elements disposed proximate its ends, where the hard bias elements include an improved hard bias magnetic grain structure. This is accomplished by fab... | 09/11/2007 |
| 7256970 | Elimination of electric-pop noise in MR/GMR device A magnetic reading head comprising: a bottom shield; a top shield; an AMR device with MR and SAL separated by a thin insulating layer; a first insulting gap layer between said bottom shield and said AMR; a second insulating gap layer between said AMR and said top sh... | 08/14/2007 |
| 7220499 | CPP giant magnetoresistive head having antiferromagnetic film disposed in rear of element A CPP giant magnetoresistive head includes lower and upper shield layers with a predetermined distance therebetween, and a giant magnetoresistive element (GMR) including pinned and free magnetic layers disposed between the upper and lower shield layers with a nonmag... | 05/22/2007 |
| 7209327 | Magnetoresistive head having magnetic domain control film in contact with underlayer and with ends of free layer A magnetic domain control underlayer is formed below a magnetoresistive multi-layered film thereby bringing the magnetic domain control film into contact with both lateral end faces of a free layer and appropriate magnetic domain control can be attained in a state o... | 04/24/2007 |
| 7189583 | Method for production of MRAM elements Magneto-resistive random access memory elements include a ferromagnetic layer having uniaxial anisotropy provided by elongate structures formed in the ferromagnetic film. The magnetic dipole aligns with the long axis of each structure. The structures can be formed i... | 03/13/2007 |
| 7164560 | Spin-valve magnetoresistive thin film element A spin-valve magnetoresistive thin film element comprises an antiferromagnetic layer and a pinned magnetic film. The pinned magnetic film contacts the antiferromagnetic layer, wherein a magnetizing direction is pinned by an exchange coupling magnetic field between t... | 01/16/2007 |
| 7159303 | Method for manufacturing magnetic head device The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect el... | 01/09/2007 |
| 7158356 | Elimination of electric-pop noise in a MR device The invention relates to a magnetic recording head comprising: a bottom shield; a top shield; and AMR device with MR and SAL separated by a thin insulating layer; a first insulting gap layer between said bottom shield and said AMR; a second insulating gap layer betw... | 01/02/2007 |
| 7142399 | Exchange coupling film and magnetoresistive element using the same An exchange coupling film including an antiferromagnetic layer and a ferromagnetic layer in contact with the antiferromagnetic layer so as to generate an exchange coupling magnetic field is provided. A PtMn alloy is used as the material of the antiferromagnetic laye... | 11/28/2006 |
| 7141508 | Magnetoresistive effect thin-film magnetic head and manufacturing method of magnetoresistive effect thin-film magnetic head A manufacturing method of an MR thin-film magnetic head with an MR film and lead conductors overlapping each other, includes a step of depositing a conductor layer on at least the magnetoresistive effect film, a step of forming a cap layer patterned on the deposited... | 11/28/2006 |
| 7134184 | Process of manufacturing a narrow track CCP head with bias cancellation The problem of increased edge sensitivity associated with the reduction of the spacing between bias magnets in a CPP head has been solved by limiting the width of the bias cancellation layer and by adding an extra layer of insulation to ensure that current through t... | 11/14/2006 |
| 7123452 | Spin-valve GMR with patterned synthetic exchange bias A GMR bottom spin valve sensor longitudinally exchange biased with a zero net magnetic moment biasing multi-layer is provided, together with a method of forming said sensor. The sensor may be additionally biased with a hard biasing layer formed against an abutted ju... | 10/17/2006 |
| 7119996 | Exchange coupling film and magnetoresistive element using the same A PtMn alloy film known as an antiferromagnetic material having excellent corrosion resistance is used for an antiferromagnetic layer. However, an exchange coupling magnetic field is decreased depending upon the conditions of crystal grain boundaries. Therefore, in ... | 10/10/2006 |
| 7088562 | Electrical lead structures having crystalline structures that match underlying magnetic hard bias layers for magnetoresistive sensors A magnetic head including an electrical lead layer that is comprised of a material having an ordered crystalline structure. In a preferred embodiment, the ordered crystalline structure of the electrical lead is epitaxially matched to the crystalline structure of the... | 08/08/2006 |
| 7085110 | Thermally stable oxidized bias layer structure for magnetoresistive magnetic head for a hard disk drive The magnetic head of the present invention includes a magnetoresistive read head element in which a magnetic bias layer is deposited across the surface of the wafer above the free magnetic layer. Central portions of the biasing layer that correspond to the read head... | 08/01/2006 |
| 7079362 | Giant magnetoresistive element A giant magnetoresistive (GMR) element includes a first antiferromagnetic layer, a pinned magnetic layer having a magnetization direction pinned by the first antiferromagnetic layer, a nonmagnetic material layer, a free magnetic layer having a magnetization directio... | 07/18/2006 |
| 7077936 | Method of producing exchange coupling film and method of producing magnetoresistive sensor by using exchange coupling film A laminate structure includes an antiferromagnetic layer, a pinned magnetic layer, and a seed layer contacting the antiferromagnetic layer on a side opposite to pinned magnetic layer. The seed layer is constituted mainly by face-centered cubic crystals with (111) pl... | 07/18/2006 |
| 7072156 | Method for biasing magnetoresistive sensor with decoupled hard bias multilayers A magnetic sensor is provided, having two bias layers separated by a decoupling layer to eliminate exchange coupling between the bias layers. The two bias layers may have differing coercivities, such that the biases provided by the bias layers to the free layer are ... | 07/04/2006 |
| 7072155 | Magnetoresistive sensor including magnetic domain control layers having high electric resistivity, magnetic head and magnetic disk apparatus A magnetoresistive sensor of the type of flowing a signal sensing current perpendicular to the plane, a magnetic head using the magnetoresistive sensor, and a magnetic disk apparatus, comprising a substrate, a pair of magnetic shield layers consisting of a lower mag... | 07/04/2006 |
| 7068478 | CPP GMR read head Replacing ruthenium with rhodium as the AFM coupling layer in a synthetically pinned CPP GMR structure enables the AP1/AP2 thicknesses to be increased. This results in improved stability and allows the free layer and AFM layer thicknesses to be decreased, leading to... | 06/27/2006 |
| 7061725 | Magnetic read sensor with stripe width and stripe height control The present invention includes a magnetic sensing structure having a stripe height and a stripe width defining an area for a current flowing therethrough, and at least one electrode positioned adjacent an edge of the magnetic sensing structure for adjustably control... | 06/13/2006 |
| 7057863 | Anti-parallel tab sensor fabrication using chemical-mechanical polishing process A method for fabricating a sensor having anti-parallel tab regions. The method includes forming a free layer, and forming a first layer of a carbon composition above the active area of the free layer. A layer of resist is formed above the first layer of carbon compo... | 06/06/2006 |
| 7046490 | Spin valve magnetoresistance sensor and thin film magnetic head A spin valve magnetoresistance sensor of a thin film magnetic head. In one embodiment, a spin valve magnetoresistance sensor is provided with a spin valve film, in which a base layer including a first base film of Ta or some other nonmagnetic metal and, on top of th... | 05/16/2006 |
| 7046487 | Magnetoresistive effective element, thin film magnetic head, magnetic head device and magnetic recording/reproducing device A first magnetic shielding film is disposed on one surface of a magnetoresistive effective film in a thickness direction thereof, and a second magnetic shielding film is disposed on the other surface of the magnetoresistive effective film in said thickness direction... | 05/16/2006 |
| 7040005 | Process of making a GMR improvement in CPP spin valve head by inserting a current channeling layer (CCL) A method of fabricating a current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor stack, wherein the parasitic resistance of the high-resistance antiferromagnetic (AFM) pinning layer is effectively reduced by enlarging its surface area and forming b... | 05/09/2006 |
| 7035061 | Magnetoresistive transducer with low magnetic moment, high coercivity stabilizing magnets A transducing head includes a first bias element, a second bias element, and a magnetoresistive sensor positioned between the first bias element and the second bias element. The first bias element and the second bias element are each formed of a permanent magnet mat... | 04/25/2006 |
| 7027271 | Magnetoresistive device in a thin-film magnetic head and method of manufacturing same having particular electrode overlay configuration A magnetoresisive device comprises an MR element, bias field applying layers located adjacent to the side portions of the MR element, and two electrode layers that feed a sense current to the MR element. The electrode layers overlap one of the surfaces of the MR ele... | 04/11/2006 |
| 7027319 | Retrieving data stored in a magnetic integrated memory Methods and apparatuses are disclosed for retrieving data stored in a magnetic integrated memory. In one embodiment, the method includes applying a perturbing hard-axis magnetic field to a magnetic element in a magnetic integrated memory and detecting a change in an... | 04/11/2006 |
| 7027270 | Spin valve sensor for high areal density applications The magnetoresistive sensor has a bottom shield, a nonmagnetic metallic pedestal, a bottom reader gap, a biasing element, a magnetoresistive stack, current leads, a top reader gap, and a top shield. The nonmagnetic metallic pedestal is positioned on a portion of the... | 04/11/2006 |
| 7016166 | Mag-tab design for biasing magnetic sensors A structure for stabilizing the active region of the magnetic sensor comprises a hard ferromagnetic element adjacent to a biasing multilayer element placed on either side of the active region of the magnetic sensor. The biasing multilayer element includes soft ferro... | 03/21/2006 |
| 7016165 | Abutted junction GMR read head with an improved hard bias layer and a method for its fabrication A method for forming a spin-valve type abutted junction GMR sensor element with a thinner hard magnetic longitudinal bias layer having significantly improved magnetic properties in the junction region and a spin-valve type abutted junction GMR sensor element with a ... | 03/21/2006 |
| 7007374 | Method of making a magnetic head A narrow track width read sensor having a high magnetoresistive sensitivity is made using a self-aligned process which requires the use of only a single resist mask. A plurality of sensor layers is deposited over a substrate. After forming a resist mask in the centr... | 03/07/2006 |
| 7008702 | Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system A magnetoresistance effect element includes a nonmagnetic spacer layer, first and second ferromagnetic layer separated by the nonmagnetic spacer layer, and a nonmagnetic conductivity layer. The first ferromagnetic layer has a magnetization direction at an angle rela... | 03/07/2006 |
