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| Number | Title | Issue Date |
| 8184407 | Magnetoresistance effect device, magnetic lamination structural body, and manufacture method for magnetic lamination structural body An underlying layer (2) made of NiFeN is disposed over the principal surface of a substrate. A pinning layer (3) made of antiferromagnetic material containing Ir and Mn is disposed on the underlying layer. A reference layer (4c) made of f... | 05/22/2012 |
| 8159791 | Magnetoresistive sensor having quantum well structure and a trapping layer for preventing charge carrier migration A Lorentz Magnetoresistive sensor having an ultrathin trapping layer disposed between a quantum well structure and a surface of the sensor. The trapping layer prevents charge carriers from the surface of the sensor from affecting the quantum well structure. This all... | 04/17/2012 |
| 8149546 | Magnetic field detecting element including tri-layer stack with stepped portion A magnetic field detecting element comprises a stack including upper and lower magnetic layers, and a non-magnetic intermediate layer sandwiched therebetween, wherein magnetization of the magnetic layers changes in accordance with an external magnetic field; upper a... | 04/03/2012 |
| 8111489 | Magneto-resistance effect element An example method for manufacturing a magneto-resistance effect element includes: forming a first magnetic layer; forming a first metallic layer, on the first magnetic layer, mainly containing an element selected from the group consisting of Cu, Au, Ag; forming a fu... | 02/07/2012 |
| 8111488 | Magnetic multilayered film current element A magnetic multilayered film current element includes: at least one magnetic layer; at least one film structure containing a first insulating layer where a first opening is formed, a second insulating layer where a second opening is formed and a conductor disposed b... | 02/07/2012 |
| 8072711 | System and method for the fabrication, characterization and use of magnetic corrosion and chemical sensors A chemical or corrosive environment sensing system, comprising a giant magnetoresistive effect device having at least one environmentally exposed film, and a device, for sensing changes in the GMR effect device resulting from environmental exposure of the at least o... | 12/06/2011 |
| 8059373 | EMR sensor and transistor formed on the same substrate Magnetic sensing chips and methods of fabricating the magnetic sensing chips are disclosed. A magnetic sensing chip as described herein includes an EMR sensor formed on a substrate from multiple semiconductor layers. One or more of the semiconductor layers form a qu... | 11/15/2011 |
| 8049998 | Magnetoresistance effect device and method for manufacturing same, magnetic memory, magnetic head, and magnetic recording apparatus A magnetoresistance effect device includes: an insulator layer; a first and second ferromagnetic layer laminated to sandwich the insulator layer; a magnetic bias layer laminated with the second ferromagnetic layer; and a connecting section formed discontinuously on ... | 11/01/2011 |
| 8027129 | Current perpendicular to plane magnetoresistive sensor pre-product with current confining path precursor A sensor includes a sensor stack and a layer of high resistivity material having a precursor within the sensor stack. When a current is applied at the precursor, a current confining path is formed through the layer of high resistivity material at the precursor. The ... | 09/27/2011 |
| 7990660 | Multiple CCP layers in magnetic read head devices An improved CPP magnetic read device whose oxide barrier comprises at least two separate CCP layers is disclosed. These two CCP layers differ in the PIT and IAO treatments that they received relative to the PIT/IAO treatment that would be used when only a single CCP... | 08/02/2011 |
| 7969692 | Magnetic reading head with first and second element units each including a ferromagnetic layer and each with a different spin-polarization A magnetic head includes a pair of ferromagnetic electrodes, namely, a first ferromagnetic electrode layer which is in contact with a portion of a first electrode layer with a first insulating barrier layer interposed in between; and a second ferromagnetic electrode... | 06/28/2011 |
| 7961439 | High-frequency oscillation element, magnetic information recording head, and magnetic storage device A high-frequency oscillation element has a ferromagnetic material which exhibits thermal fluctuation of magnetization and generates spin fluctuations in conduction electrons, a nonmagnetic conductive material which is laminated on the first magnetic material and tra... | 06/14/2011 |
| 7948717 | Magneto-resistance effect element, magnetic head, magnetic recording/reproducing device and magnetic memory A magneto-resistance effect element includes a first magnetic layer of which a magnetization direction is fixed; a second magnetic layer of which a magnetization direction is fixed; an intermediate layer which is provided between the first magnetic layer and the sec... | 05/24/2011 |
| 7898774 | Magnetoresistive effect element with resistance adjustment layer of semimetal, magnetic head and magnetic reproducing apparatus A spin valve type magnetoresistive effect element for vertical electric conduction includes a magnetoresistive effect film in which a resistance adjustment layer made of a material containing conductive carriers not more than 1022/cm3 is insert... | 03/01/2011 |
| 7881021 | CPP type magnetoresistive device with biasing arrangement for ferromagnetic layers having respective magnetizations orthogonal to one another, and magnetic disk system using same A magnetoresistive device with CPP structure, comprising a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed with said nonmagnetic intermediate layer interposed between them, wherein each of said firs... | 02/01/2011 |
| 7830640 | Spin valve magnetoresistive device with conductive-magnetic material bridges in a dielectric or semiconductor layer alternatively of magnetic material Magnetoresistive device comprising a spin valve formed from a stack of layers including at least two magnetic layers for which a relative orientation of their magnetisation directions are capable varying under influence of a magnetic field; at least one discontinuou... | 11/09/2010 |
| 7760472 | Magnetic sensor and magnetic recording/reproducing apparatus A magnetic sensor includes a magnetic oscillation element whose oscillation frequency changes depending on the magnitude of an external magnetic field, and an oscillation element provided in the vicinity of the magnetic oscillation element and oscillating at an osci... | 07/20/2010 |
| 7719800 | Magnetoresistive effect element and manufacturing method thereof, and magnetic head, magnetic reproducing apparatus, and magnetic memory using the same An example magnetoresistive effect element includes a magnetoresistive effect film including a magnetization pinned layer, a magnetization free layer, and an intermediate layer interposed therebetween and having a magnetic region and a nonmagnetic region whose elect... | 05/18/2010 |
| 7697243 | Method for the detection of a magnetic field utilizing a magnetic vortex The determination of the strength of an in-plane magnetic field utilizing one or more magnetically-soft, ferromagnetic member, having a shape, size and material whereas a single magnetic vortex is formed at remanence in each ferromagnetic member. The preferred shape... | 04/13/2010 |
| 7672085 | CPP type magneto-resistive effect device having a semiconductor oxide spacer layer and magnetic disk system The invention provides a giant magneto-resistive effect device (CPP-GMR device) having a CPP (current perpendicular to plane) structure comprising a spacer layer, and a fixed magnetized layer and a free layer stacked one upon another with said spacer layer interleav... | 03/02/2010 |
| 7660081 | Superparamagnetic platelets field sensing devices A ferromagnetic thin-film based magnetic field sensor having an electrically insulative intermediate layer with two major surfaces on opposite sides thereof with an initial film of an anisotropic ferromagnetic material on one of those intermediate layer major surfac... | 02/09/2010 |
| 7643254 | Tunnel-effect type magnetic sensor having free layer including non-magnetic metal layer A free magnetic layer of a tunnel-effect type magnetic sensor is formed on an insulating barrier layer made of Mg—O, and the free magnetic layer includes an enhancement layer, a first soft magnetic layer, a non-magnetic metal layer, and a second soft magnetic laye... | 01/05/2010 |
| 7602588 | Magnetic sensor using a magnetic oscillation element A magnetic sensor has a magnetic oscillation element including a first magnetic resonance layer, a second magnetic resonance layer, a nonmagnetic layer sandwiched between the first and second magnetic resonance layers, and a pair of electrodes which supply a current... | 10/13/2009 |
| 7561383 | Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing syste... | 07/14/2009 |
| 7522388 | Magnetoresistance effect element having a lower magnetic layer formed over a base substrate through a transition metal oxide layer having a predetermined orientation plane A magnetoresistance effect element is provided and includes a memory layer, an insulating layer and a fixed magnetic layer successively stacked on a substrate. The memory layer is formed on the substrate through a transition metal oxide layer having a predetermined ... | 04/21/2009 |
| 7515386 | Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing syste... | 04/07/2009 |
| 7486486 | Magnetic device to reduce reversal current in current-driven magnetic reversal and magnetic memory using same A magnetic device includes a first ferromagnetic layer in which magnetic layers and one or more nonmagnetic layers are alternately stacked, a second ferromagnetic layer having magnetization substantially fixed to a second direction, a third ferromagnetic layer provi... | 02/03/2009 |
| 7446981 | Magnetic head, fabrication process of magnetic head, and magnetic disk storage apparatus mounting magnetic head This invention provides a high-output magnetic head with a high yield, which is capable of minimizing sense current leak or noise caused by a shift of the magnetic wall of an upper shield layer. In one embodiment, the magnetic head is fabricated so that the height o... | 11/04/2008 |
| 7431961 | Composite free layer for CIP GMR device In this invention, we replace low resistivity NiFe with high-resistivity FeNi for the FL2 portion of a composite free layer in a CIP GMR sensor in order to minimize current shunting effects while still retaining both magnetic softness and low magnetostriction... | 10/07/2008 |
| 7425456 | Antiferromagnetic stabilized storage layers in GMRAM storage devices A giant magnetoresistive memory device includes a magnetic sense layer, a magnetic storage layer, a non-magnetic spacer layer between the magnetic sense layer and the magnetic storage layer, and an antiferromagnetic layer formed in proximity to the magnetic storage ... | 09/16/2008 |
| 7394247 | Magnetic field angle sensor with GMR or MTJ elements The invention discloses a sensor for 360-degree magnetic field angle measurement. It comprises multiple GMR (or MTJ) stripes with identical geometries except for their orientations. These are used as the building blocks for a pair of Wheatstone bridges that signal t... | 07/01/2008 |
| 7382588 | Read sensor having a self-pinned layer formed in both central and side regions for increased thermal stability A magnetic head includes first and second shield layers and a read sensor formed between and in electrical contact with the first and second shield layers. The read sensor includes a free layer structure; an antiparallel (AP) self-pinned structure which includes a f... | 06/03/2008 |
| 7382584 | Method to increase CCP-CPP GMR output by thermoelectric cooling The problem of increasing the output signal from a CCP-CPP GMR device without having it overheat has been overcome by placing materials that have different thermoelectric potentials on opposing sides of the spacer layer. Heat from the hot junction is removed at the ... | 06/03/2008 |
| 7369374 | Current in plane magnetoresistive sensor having a contiguous hard bias layer located at back edge of stripe height A current in plane giant magnetoresistive (GMR) sensor having a hard bias layer that extends along the back edge (strip height) of the sensor rather than from the sides of the sensor. The hard bias layer preferably extends beyond the track width of the sensor. Elect... | 05/06/2008 |
| 7365948 | Exchange-coupled film, method for making exchange-coupled film, and magnetic sensing element including exchange-coupled film An exchange-coupled film includes a seed layer, an antiferromagnetic layer, and a ferromagnetic layer. The seed layer is formed at a thickness that is larger than the critical thickness, and the thickness of the seed layer is then decreased by etching so as to be sm... | 04/29/2008 |
| 7362547 | Magnetic head having PtMn layer formed by ion beam deposition A magnetic head having an improved PtMn layer formed by ion beam deposition, an antiparallel (AP) pinned layer structure formed above the PtMn layer, and a free layer formed above the AP pinned layer structure. The spin valve structure provides improved soft magneti... | 04/22/2008 |
| 7359162 | Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing syste... | 04/15/2008 |
| 7355822 | Superparamagnetic field sensing device A ferromagnetic thin-film based magnetic field sensor having an electrically insulative intermediate layer with two major surfaces on opposite sides thereof with an initial film of an anisotropic ferromagnetic material on one of those intermediate layer major surfac... | 04/08/2008 |
| 7355823 | Ta based bilayer seed for IrMn CPP spin valve The effectiveness of an IrMn pinning layer in a CPP GMR device at high switching fields has been improved by replacing the conventional single layer seed by a layer of tantalum and either ruthenium or copper. The tantalum serves to cancel out the crystallographic in... | 04/08/2008 |
| 7352541 | CPP GMR using Fe based synthetic free layer A current perpendicular to plane (CPP) giant magnetoresistive (GMR) sensor having an antiparallel coupled free layer including a first magnetic layer of Fe and a second magnetic layer of FeXN, where X can be Al or Ta. The first and second magnetic layers of the free... | 04/01/2008 |
