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| Number | Title | Issue Date |
| 8184411 | MTJ incorporating CoFe/Ni multilayer film with perpendicular magnetic anisotropy for MRAM application A MTJ for a spintronic device is disclosed and includes a thin composite seed layer made of at least Ta and a metal layer having fcc(111) or hcp(001) texture as in Ta/Ti/Cu to enhance perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co... | 05/22/2012 |
| 8169754 | Dedicated noncorrosive smear detector A disk drive head slider for a magnetic disk drive is provided. The head slider includes a tunnel magnetic resistance device for reading data on a magnetic disk and a dedicated noncorrosive smear detector for measuring resistance wherein the resistance corresponds t... | 05/01/2012 |
| 8164864 | Method and system for fabricating magnetic transducers with improved pinning A method and system for providing a magnetic transducer are disclosed. The method and system include providing a magnetic element that includes a free layer, a pinned layer, and a nonmagnetic spacer layer between the free layer and the pinned layer. The nonmagnetic ... | 04/24/2012 |
| 8154829 | Tunneling magnetoresistive (TMR) device with improved ferromagnetic underlayer for MgO tunneling barrier layer A tunneling magnetoresistance (TMR) device, like a TMR read head for a magnetic recording hard disk drive, has a magnesium oxide (MgO) tunneling barrier layer and a ferromagnetic underlayer beneath and in direct contact with the MgO tunneling barrier layer. The ferr... | 04/10/2012 |
| 8149549 | Magnetoresistive head including magnetoresistive effect film of fixed layer, non-magnetic layer, insulating barrier layer and free layer, and magnetic recording device with magnetoresistive head A magnetoresistive head is provided with high reliability and produced at a high yield rate. The magnetoresistive head includes a lower magnetic shield layer, an upper magnetic shield layer, a magnetoresistive effect film, and means for causing a current to flow in ... | 04/03/2012 |
| 8139325 | Tunnel magnetoresistive thin film A tunnel magnetoresistive thin film has a high MR ratio and improves heat resistance while maintaining a thin film of a Ru layer used as a non-magnetic layer so that the Ru layer expresses a preferable exchange coupling magnetic field even through annealing is perfo... | 03/20/2012 |
| 8130477 | Magneto-resistance effect element having a diffusive electron scattering layer, magneto-resistance effect head, magnetic storage and magnetic memory A magneto-resistance effect element, a magneto-resistance effect head, a magnetic storage and a magnetic memory, in which noise caused by a spin-transfer torque is reduced, are provided. In a fixed magnetization layer or a free magnetization layer of a magneto-resis... | 03/06/2012 |
| 8130476 | Tunneling magnetic sensing element and method for manufacturing the same A tunneling magnetic sensing element includes: a pinned magnetic layer whose direction of magnetization is pinned in one direction; an insulating barrier layer; and a free magnetic layer whose direction of magnetization changes in response to an external magnetic fi... | 03/06/2012 |
| 8125746 | Magnetic sensor with perpendicular anisotrophy free layer and side shields A tunneling magneto-resistive reader includes a sensor stack separating a top magnetic shield from a bottom magnetic shield. The sensor stack includes a reference magnetic element having a reference magnetization orientation direction and a free magnetic element hav... | 02/28/2012 |
| 8107202 | Magnetoresistive sensor with novel pinned layer structure A magnetoresistive sensor having an antiparallel coupled pinned layer structure including an AP1 layer and an AP2 layer. The AP2 layer includes two ferromagnetic layers AP2(a) and AP2(b), and a separation layer sandwi... | 01/31/2012 |
| 8094421 | Current-perpendicular-to-plane (CPP) read sensor with multiple reference layers A current-to-perpendicular-to-plane (CPP) read sensor with multiple reference layers and associated fabrication methods are disclosed. According to one embodiment of the invention, the multiple reference layers of a CPP tunneling magnetoresistance (TMR) read sensor ... | 01/10/2012 |
| 8085513 | Magnetic sensor An object is to provide a magnetic sensor permitting an increase in potential output. The magnetic sensor has a channel layer, a magnetization free layer provided on a first portion of the channel layer and configured to detect an external magnetic field, and a magn... | 12/27/2011 |
| 8081405 | Current-perpendicular-to-plane (CPP) read sensor with smoothened multiple reference layers A current-to-perpendicular-to-plane (CPP) read sensor with multiple reference layers and associated fabrication methods are disclosed. According to one embodiment, the multiple reference layers of a CPP read sensor include a first reference layer (e.g., Co—Fe) for... | 12/20/2011 |
| 8072714 | Tunneling magnetoresistance (TMR) device, its manufacture method, magnetic head and magnetic memory using TMR device A barrier layer is disposed over a pinned layer made of ferromagnetic material having a fixed magnetization direction, the barrier layer having a thickness allowing electrons to transmit therethrough by a tunneling phenomenon. A first free layer is disposed over the... | 12/06/2011 |
| 8072713 | Magnetic reading head and magnetic recording apparatus To provide a magnetic reading head that features high resolution and low noise, and that can support a hard disk with terabit-level surface recording density. A current is caused to flow from a pinned layer with its magnetization direction fixed by an antiferro magn... | 12/06/2011 |
| 8068317 | Magnetic tunnel transistor with high magnetocurrent A magnetic tunnel transistor (MTT) having a pinned layer that has no antiferromagnetic material in an active area of the sensor. The MTT can include a layer of antiferromagnetic material that is exchange coupled with the pinned layer in an area outside of the active... | 11/29/2011 |
| 8059374 | TMR device with novel free layer structure A composite free layer having a FL1/insertion/FL2 configuration is disclosed for achieving high dR/R, low RA, and low λ in TMR or GMR sensors. Ferromagnetic FL1 and FL2 layers have (+) λ and (−) λ values, respectively. FL1 may be CoFe, CoFeB, or alloys thereof ... | 11/15/2011 |
| 8054588 | Tunneling magnetoresistive element including multilayer free magnetic layer having inserted nonmagnetic metal sublayer A tunnel magnetoresistive element includes a laminate including a pinned magnetic layer, an insulating barrier layer, and a free magnetic layer. The insulating barrier layer is composed of Ti—Mg—O or Ti—O. The free magnetic layer includes an enhancement sublay... | 11/08/2011 |
| 8045299 | Method and apparatus for oxidizing conductive redeposition in TMR sensors A method and apparatus for oxidizing conductive redeposition in TMR sensors is disclosed. A TMR stack having a first electrode that includes at least a pinned layer and an antiferromagnetic (AFM) layer, a second electrode that includes a free layer and a tunnel barr... | 10/25/2011 |
| 8045300 | Tunneling magnetic sensing element and method for producing same A free magnetic layer has a laminated structure in which a first magnetic sublayer composed of Co—Fe or Fe and a second magnetic sublayer composed of Co—Fe—B or Fe—B are formed, in that order, on an insulating barrier layer composed of Mg—O. This effective... | 10/25/2011 |
| 8035932 | Lorentz magnetoresistive sensor with integrated signal amplification A Lorentz magnetoresistive sensor having integrated signal amplification. The sensor is constructed upon a substrate such as a semiconductor material, and an amplification circuit such as transistor is constructed directly into the substrate on which the magnetoresi... | 10/11/2011 |
| 8023233 | Tunneling magnetic sensing element including free magnetic layer and IrMn protective layer disposed thereon and method for manufacturing the same A tunneling magnetic sensing element includes a pinned magnetic layer whose magnetization direction is pinned in one direction, an insulating barrier layer disposed on the pinned magnetic layer, a free magnetic layer whose magnetization direction varies in response ... | 09/20/2011 |
| 8000066 | Hard disk system incorporating a current perpendicular to plane magneto-resistive effect device with a spacer layer in the thickness range showing conduction performance halfway between OHMIC conduction and semi-conductive conduction The thickness of the semiconductor layer forming a part of the spacer layer is set in the thickness range for a transitional area showing conduction performance halfway between ohmic conduction and semi-conductive conduction in relation to the junction of the semico... | 08/16/2011 |
| 7986498 | TMR device with surfactant layer on top of CoFeB/CoFeinner pinned layer A high performance TMR element is fabricated by inserting an oxygen surfactant layer (OSL) between a pinned layer and AlOx tunnel barrier layer in a bottom spin valve configuration. The pinned layer preferably has a SyAP configuration with an outer pinned layer, a R... | 07/26/2011 |
| 7986497 | Low resistance TMR read head fabricated by a novel oxidation method The invention is a magnetoresistive read head with an MTJ configuration having an ultra-thin tunneling barrier layer with low resistance and high breakdown strength. The barrier layer is formed by natural oxidation of an ultra-thin (two atomic layers) Al or Hf—Al ... | 07/26/2011 |
| 7978442 | CPP device with a plurality of metal oxide templates in a confining current path (CCP) spacer A novel CCP scheme is disclosed for a CPP-GMR sensor in which an amorphous metal/alloy layer such as Hf is inserted between a lower Cu spacer and an oxidizable layer such as Al, Mg, or AlCu prior to performing a pre-ion treatment (PIT) and ion assisted oxidation (IA... | 07/12/2011 |
| 7978443 | Tunnel magnetoresistive effect element having a tunnel barrier layer of a crystalline insulation material and manufacturing method of tunnel magnetoresistive effect element A TMR element includes a lower magnetic layer, an upper magnetic layer, and a tunnel barrier layer of crystalline insulation material sandwiched between the lower magnetic layer and the upper magnetic layer. The lower magnetic layer includes a first magnetic layer a... | 07/12/2011 |
| 7969693 | Tunnel magnetoresistive sensor in which at least part of pinned layer is composed of CoFeB layer and method for manufacturing the tunnel magnetoresistive sensor A tunnel magnetoresistive sensor includes a pinned magnetic layer, an insulating barrier layer formed of Mg—O, and a free magnetic layer. A barrier-layer-side magnetic sublayer constituting at least part of the pinned magnetic layer and being in contact with the i... | 06/28/2011 |
| 7961442 | Tunneling magnetic detecting element having insulation barrier layer and method for making the same A tunneling magnetic detecting element includes an insulating barrier layer having a layered structure including a Ti—O sublayer and a Ta—O sublayer. The Ta concentration in the insulating barrier layer is set to be more than 0 at % but not more than about 7 at ... | 06/14/2011 |
| 7957109 | Magnetic head of magnetoresistance effect type with high resistance to external stress A tunnel magnetoresistance effect magnetic head having between magnetic shield layers, an antiferromagnetic layer, a pinned layer which has the direction of magnetization pinned by exchange coupling with the antiferromagnetic layer, an insulating layer, and a free l... | 06/07/2011 |
| 7957108 | Magnetoresistive element having spacer layer that includes two layered regions composed of oxide semiconductor and nonmagnetic conductor phase sandwiched therebetween An MR element includes a free layer having a direction of magnetization that changes in response to an external magnetic field, a pinned layer having a fixed direction of magnetization, and a spacer layer disposed between these layers. The spacer layer includes a fi... | 06/07/2011 |
| 7933100 | Tunneling magnetic sensor including free magnetic layer and magnesium protective layer disposed thereon A tunneling magnetic sensor includes a pinned magnetic layer of which the magnetization is pinned in one direction, an insulating barrier layer, and a free magnetic layer of which the magnetization is varied by an external magnetic field, these layers being arranged... | 04/26/2011 |
| 7920363 | TMR sensor having magnesium/magnesium oxide tunnel barrier A tunnel junction magnetoresistive sensor having improved TMR performance (dR/R) and improved area resistance. The sensor includes a barrier layer sandwiched between a magnetic pinned layer structure and a magnetic free layer structure. The barrier layer includes a ... | 04/05/2011 |
| 7916435 | Magnetic tunnel transistor having a base structure that provides polarization of unpolarized electrons from an emitter based upon a magnetic orientation of a free layer and a self-pinned layer A magnetic tunnel transistor (MTT) is formed having an emitter that is configured to provide unpolarized electrons. A composite base is configured to provide polarization of the unpolarized electrons injected into the base by the emitter based upon a magnetic orient... | 03/29/2011 |
| 7916434 | Tunnel magnetoresistive effect element with limited electric popping output voltage A TMR effect element with sufficiently reduced element resistance and restricted popping noise is provided, which comprises a tunnel barrier layer formed primarily of a metal oxide including many electric charge sites. The electric charge sites density n and the mob... | 03/29/2011 |
| 7916436 | Tunneling magnetic sensor including platinum layer and method for producing the same A tunneling magnetic sensor includes a platinum layer between a pinned magnetic layer and an insulating barrier layer. The platinum layer can probably vary the barrier height (potential height) and barrier width (potential width) of the insulating barrier layer to r... | 03/29/2011 |
| 7907370 | Tunneling magnetic sensing element having free layer containing CoFe alloy A tunneling magnetic sensing element including an Mg—O insulating barrier which can maintain favorable soft-magnetic properties of a free magnetic layer and can have a high resistance change ratio (ΔR/R) compared to known tunnel magnetic sensing elements is discl... | 03/15/2011 |
| 7898776 | Tunneling magnetic sensing element including enhancing layer having high Fe concentration in the vicinity of barrier layer A tunneling magnetic sensing element is provided, in which an increase in the magnetostriction of a free magnetic layer is reduced and the rate of change in resistance is high. A laminate T1 constituting the tunneling magnetic sensing element includes a porti... | 03/01/2011 |
| 7885042 | CPP magneto-resistive effect device utilizing an anti-oxidizing layer as part of the spacer layer in a thin-film magnetic head usable in a head gimbal assembly in a hard disk system A giant magneto-resistive effect device having a CPP structure comprising a spacer layer, and a fixed magnetization layer and a free layer stacked one upon another with the spacer layer interposed between them, with a sense current applied in a stacking direction. T... | 02/08/2011 |
| 7881025 | Magneto-resistive effect device having a spacer layer of a semiconductor layer interposed between first and second nonmagnetic metal layers and a work function control layer for use in a thin-film magnetic head usable in a head gimbal assembly in a hard disk system The invention provides a CPP-GMR device comprising a spacer layer. The spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material, and a semiconductor layer interposed between the first no... | 02/01/2011 |
