Class 340/14.63 - Field effect transistor

Subclass of Class 340 - Communications: electrical
Definition: Subject matter wherein the resistance between two terminals
No. of patents: 28
Last issue date: 10/09/2007

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Number	Title	Issue Date
7279773	Protection device for handling energy transients A protection device for handling energy transients includes a plurality of basic unit Zener diodes connected in series to achieve a desired breakdown voltage. Each of the basic unit Zener diodes is formed in a first-type substrate. Each of the basic unit Zener diode...	10/09/2007
7250857	Multiplexer method and system for intrinsically safe applications and a multiplexer switch for use therein A multiplexing system is provided for a plurality of sensors disposed in a tank containing a potentially explosive environment and excited from a common excitation circuit outside of the tank through a corresponding plurality of signal lines that penetrate the tank....	07/31/2007
7221350	Method of reducing flickering and inhomogeneous brightness in LCD A method of reducing flickering and inhomogeneous brightness in an LCD. The method serially connects each scan line connecting a plurality of pixels in a row with a resistor to form a scan line circuit. The resistor is connected between the first pixel of the scan l...	05/22/2007
7145358	Display apparatus and inspection method The test circuit of a display apparatus according to the invention detect short-circuiting in each of the data lines Dn by inputting the electric potential Vd of the data line Dn connected to the corresponding one of high resistance first short-circuiting detecting ...	12/05/2006
7061554	Liquid crystal display An LCD provided with an electrostatic protecting circuit includes a plurality of signal lines formed at constant intervals, a common electrode arranged in a vertical direction to the signal lines, a plurality of first electrostatic protecting circuits respectively a...	06/13/2006
6924853	Liquid crystal display with electrostatic protection An LCD provided with an electrostatic protecting circuit includes a plurality of signal lines formed at constant intervals, a common electrode arranged in a vertical direction to the signal lines, a plurality of first electrostatic protecting circuits respectively a...	08/02/2005
6919883	Charge characteristic compensating circuit for liquid crystal display panel A charge characteristic compensating circuit for a liquid crystal display panel for maintaining a charge characteristic of the liquid crystal display panel independently of ambient temperature change to prevent deterioration of images displayed. A plurality of liqui...	07/19/2005
6914643	Liquid crystal display The present invention relates to a liquid crystal display provided with an electrostatic protection element and an object of the present invention is to provide the liquid crystal display provided with superior redundancy and at the same time a sufficient protection...	07/05/2005
6677688	Scalable N×M, RF switching matrix architecture A scalable N×M switching matrix architecture is characterized by a readily calculable number of crossover locations and comprises one or more single pole, N throw ("SPNT") switches and, for each such switch, an N state impedance converter/amplitude compe...	01/13/2004
5497146	Matrix wiring substrates A matrix wiring substrate is provided which can perform an electrostatic countermeasure until drive circuits are connected to a matrix wiring substrate, whereby the circuit wiring can be inspected at an earlier stage. The matrix wiring substrate, where ci...	03/05/1996
5227781	MOSFET switch matrix A solid state switch matrix for developing a high current, high voltage output power pulse in response to a small signal input pulse includes a plurality of solid state switch modules and a controller. Each of the modules has a small signal input, a large...	07/13/1993
5150083	Digitally controlled monolithic switch matrix using selectable dual gate FET power dividers and combiners There is described a 2×2 switch matrix which includes four 1×1 switch matrix modules. Each 1×1 switch matrix module consists of an active power divider switch (APDS), an active power combiner switch (APCS) and an air bridge crossover. Additional APDSs ...	09/22/1992
5043719	Matrix circuit A matrix circuit has a plurality of blocks each including a plurality of semiconductor unit elements, the semiconductor unit elements of each block being adapted to be impressed with a predetermined voltage at the same time, each unit element becoming act...	08/27/1991
4910508	Matrix logic circuit network suitable for large-scale integration A matrix logic circuit network comprises a great number of interconnected logic gates. Input and output lines of the logic gates are arranged in the matrix array. By rearranging the input and output lines of the matrix in accordance with a sort algorithm,...	03/20/1990
4899308	High density ROM in a CMOS gate array A memory circuit implemented in a CMOS gate array employs both P-channel and N-channel transistors as memory devices. The use of P-channel memory devices is made possible by providing a level-shifting circuit and a voltage reference circuit to compensate ...	02/06/1990
4801983	Schottky diode formed on MOSFET drain A unidirectional switching circuit having no charge storage effect for performing a high-speed switching operation is disclosed in which one of the anode and cathode terminals of a Schottky-barrier diode is connected to one of the source and drain termina...	01/31/1989
4745305	Common cell I/O interface circuit A common cell for use as an input/output circuit in a CMOS integrated circuit having a P-channel transistor structure having a plurality of individual P-channel transistors, an N-channel transistor structure having a plurality of individual N-channel tran...	05/17/1988
4682127	Ultra-high frequency signal switching matrix having active component switching junctions The invention relates to an ultra-high frequency switching matrix. Only active components, i.e. field effect transistors, are used in the integrated circuit construction of the matrix according to the invention. Coupling between an input channel and an ou...	07/21/1987
4534008	Programmable logic array Given a programmable logic array, all product terms of the product matrix are applied to a prescribable potential by way of a first control signal so that the following sum matrix is no longer influenced by the input variables. Additional transfer element...	08/06/1985
4450537	Monolithically integrated read-only memory A monolithically integrated read-only memory has a plurality of word lines, read lines which cross the word lines to form intersections, and field effect transistors connected to the read and word lines, these transistors being selectable via the word lin...	05/22/1984
4445117	Transistorized focal plane having floating gate output nodes A transistorized monolithic focal plane array is formed on a semiconductive substrate and comprises a plurality of detectors associated with a corresponding plurality of source follower or inverter transistors. The array is row addressable. The gate of th...	04/24/1984
4399439	Signal switching matrix An M by N switch matrix includes N input switches each single-pole M-throw, M output switches each N-throw single-pole with the NM outputs of the N input switches coupled directly to respective ones of the NM inputs of the M output switches whereby a si...	08/16/1983
4317110	Multi-mode circuit The conduction path of a first transistor means of first conductivity type is connected between a first point of operating potential and an output point. The conduction paths of second and third transistors of second conductivity type are connected in ser...	02/23/1982
4313106	Electrically programmable logic array Two matrix arrays comprised of Gate Injected Metal Oxide Semiconductor (GIMOS) non-volatile memory elements. Interconnection is made via inverters to form an electrically Alterable Programmable Logic Array (ALPLA)....	01/26/1982
4240151	Semiconductor read only memory In a circuit arrangement wherein a memory matrix and an address decoder are constructed of read only memories (ROMs), a semiconductor read only memory is characterized in that at least the address decoder ROM in which the number of output lines to be sele...	12/16/1980
4059826	Semiconductor memory array with field effect transistors programmable by alteration of threshold voltage N-channel silicon gate MOS memory cells are programmed by an ion implant step which is done prior to forming the gates or the diffused source and drain regions. The implanted devices have a threshold voltage which is about zero, so the devices cannot be t...	11/22/1977
4025908	Dynamic array with clamped bootstrap static input/output circuitry A read only memory is organized as a matrix of field effect transistors wherein logic levels are determined by the presence or absence of a gate which permits transistor action. The memory is addressed using a gate decode tree which selects the gates of a...	05/24/1977
4023147	Associative capacitive storage circuits For associative operation of a storage circuit, two field-effect transistors form one storage cell, i. e. that together with associated capacitors they store either a 1 or a 0. A word line is connected to one electrode of each field-effect transistor in a...	05/10/1977

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Class 340/14.63 - Field effect transistor