|7215174||Method and apparatus for implementing a radiation hardened N-channel transistor with the use of non-radiation hardened transistors|
A non-radiation hardened N-channel transistor used in a power switching circuit functioning in a high-ionizing, radiation-dose environment. The circuit including at least one non-radiation hardened N-channel MOSFET switching transistors, the transistor having a gate...
|6898890||Night-vision optical device having controlled life expectancy|
A night-vision optical device of the invention with controlled life expectancy contains a time measuring device built into the housing of the aforementioned device for measuring the accumulated time of active work of the device. In application to a night scope for a...
|6232822||Semiconductor device including a bipolar transistor biased to produce a negative base current by the impact ionization mechanism|
A semiconductor device includes a bipolar transistor whose emitter-collector voltage is set to satisfy a condition IBE
|5229962||Buffered nondestructive-readout Josephson memory cell with three gates|
A buffered nondestructive-readout Josephson memory cell comprises only three gates and is free of the half-select problem associated with Josephson memories, for both write and read operations. The basic memory cell unit comprises a first interferometer g...