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Class 324/751 - Using electron beam probe


Subclass of Class 324 - Electricity: measuring and testing
Definition: Subject matter wherein a cathode-ray device is used to sense
No. of patents: 506
Last issue date: 01/25/2011


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NumberTitleIssue Date
7876113Method of inspecting pattern and inspecting instrument
Electron beam is irradiated to a wafer in the midst of steps at predetermined intervals by a plurality of times under a condition in which a junction becomes rearward bias and a difference in characteristic of a time period of alleviating charge in the rearward bias...
01/25/2011
7847566Configurable prober for TFT LCD array test
A method of testing electronic devices on substrates is described. The method includes placing a configurable prober over a first substrate, testing the first substrate, re-configuring the configurable prober, placing the configurable prober over a second substrate,...
12/07/2010
7795886Surface voltmeter
In a surface voltmeter (1), a surface voltage on a measurement area on a semiconductor substrate (9) on which an insulating film is formed is measured while applying light to the measurement area. With this operation, a voltage induced on a main body o...
09/14/2010
7733099Monitoring pattern for detecting a defect in a semiconductor device and method for detecting a defect
A monitoring pattern for detecting a defect in a semiconductor device allows a voltage contrast inspection which may be verified by an electrical test where no special test pattern is required for the electrical test. The monitoring pattern includes a test pattern w...
06/08/2010
7675300Charged particle beam device probe operation
An apparatus including a positioner control device, a measuring device and a control routine. The positioner control device is communicatively coupled to a chamber of a charged particle beam device (CPBD) and is configured to individually manipulate each of a plural...
03/09/2010
7656171Method and apparatus for reviewing defects by detecting images having voltage contrast
A method and apparatus for detecting defects includes irradiating and scanning an electron beam focused on an area of a sample, detecting charged particles generated from the sample by the irradiating and scanning of the electron beam with a first detector which det...
02/02/2010
7656170Multiple directional scans of test structures on semiconductor integrated circuits
Disclosed is a method of inspecting a sample. The sample is scanned in a first direction with at least one particle beam. The sample is scanned in a second direction with at least one particle beam. The second direction is at an angle to the first direction. The num...
02/02/2010
7633303Semiconductor wafer inspection apparatus
Efficiency of a charging processing of an insulator sample is improved. And, an electron optical system is adjusted according to a contact resistance value of the insulator sample. Breakdown of a sample is performed before the charging processing, and then, the char...
12/15/2009
7612570Surface-potential distribution measuring apparatus, image carrier, and image forming apparatus
A surface-potential distribution measuring apparatus includes an electron gun, an electron-beam optical system, an electron-emission panel, a detector, and a control system. The electron-beam optical system is located between the electron gun and a sample, and focus...
11/03/2009
7602197High current electron beam inspection
A method and apparatus for wafer inspection. The apparatus is capable of testing a sample having a first layer that is at least partly conductive and a second, dielectric layer formed over the first layer, following production of contact openings in the second layer...
10/13/2009
7560939Electrical defect detection using pre-charge and sense scanning with prescribed delays
One embodiment relates to an electron beam apparatus. The apparatus includes a mechanism for moving a substrate relative to the electron beam column at a controlled speed. A probe beam gun is configured to generate a probe beam through the column, and a pre-charging...
07/14/2009
7550982Semiconductor device test method for comparing a first area with a second area
A defective position of a sample to be tested is detected by irradiating the test sample and another test sample with electron beam while scanning the test samples, storing values of current generated in the test samples correspondingly to election beam irradiation ...
06/23/2009
7525325System and method for floating-substrate passive voltage contrast
A passive voltage contrast (PVC) system and method are disclosed for analyzing ICs to locate defects and failure mechanisms. During analysis a device side of a semiconductor die containing the IC is maintained in an electrically-floating condition without any ground...
04/28/2009
7518383Inspection apparatus and inspection method using electron beam
A visual inspection apparatus and method using the scanning electron microscope are disclosed. An electron beam is scanned repeatedly on a sample, and an inspection and a reference image are generated by the secondary electrons generated from the sample or reflected...
04/14/2009
7495457Semiconductor device evaluation method and apparatus using the same
In order to provide a semiconductor device evaluation method and a semiconductor device evaluation apparatus for correctly detecting an error position and providing a substrate for observing a cross section without difficulties, a transport unit of a SEM apparatus m...
02/24/2009
7474107Buried short location determination using voltage contrast inspection
Structure and methods of determining the complete location of a buried short using voltage contrast inspection are disclosed. In one embodiment, a method includes providing a test structure having a PN junction thereunder; and using the PN junction to determine the ...
01/06/2009
7474108Apparatus and method for contacting of test objects
The invention relates to methods for positioning of a substrate and contacting of the test object for testing with a test apparatus with an optical axis and corresponding devices. Thereby, the substrate is put on the holder. The substrate is positioned relative to t...
01/06/2009
7453274Detection of defects using transient contrast
One embodiment relates to a method for detecting defects in circuitry formed on a semiconductor substrate. A first scan of said circuitry is performed by scanning a primary electron beam in a first scan direction relative to said circuitry, and secondary electrons e...
11/18/2008
7449898Method and apparatus for reviewing defects by detecting images having voltage contrast
In a traditional method for automatically obtaining high-magnification images of defects by using an electron microscope for defect-reviewing of a semiconductor wafer, high-magnification images of a voltage contrast changing part are obtained in the case of defects ...
11/11/2008
7443189Method to detect and predict metal silicide defects in a microelectronic device during the manufacture of an integrated circuit
The present teachings provide methods for detection of metal silicide defects in a microelectronic device. In an exemplary embodiment, a portion of a semiconductor substrate may be positioned in a field of view of an inspection tool. The method also includes produci...
10/28/2008
7425704Inspection method and apparatus using an electron beam
An inspection method and apparatus irradiates a sample on which a pattern is formed with an electron beam, so that an inspection image and a reference image can be generated on the basis of a secondary electron or a reflected electron emitted by the sample. An abnor...
09/16/2008
7420379Semiconductor device test method and semiconductor device tester
A defective position of a sample to be tested is detected by irradiating the test sample and another test sample with electron beam while scanning the test samples, storing values of current generated in the test samples correspondingly to electron beam irradiation ...
09/02/2008
7420163Determining layer thickness using photoelectron spectroscopy
According to one embodiment of the invention, photoelectron spectroscopy is used to determine the thickness of one or more layers in a single or multi-layer structure on a substrate. The thickness may be determined by measuring the intensities of two photoelectron s...
09/02/2008
7417444Method and apparatus for inspecting integrated circuit pattern
A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density el...
08/26/2008
7403022Method for measuring peak carrier concentration in ultra-shallow junctions
A method is disclosed for determining peak carrier concentration in ultra shallow junctions of semiconductor samples. A region of the surface of the sample is periodically excited. The effects of the excitation are monitored by a probe beam. Synchronous detection pr...
07/22/2008
7385195Semiconductor device tester
A system and method is disclosed for obtaining information regarding one or more contact and/or via holes on a semiconductor wafer. In one embodiment, the method obtains information regarding one or more holes (for example, via or contact) that are disposed in a sem...
06/10/2008
7381978Contact opening metrology
A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openin...
06/03/2008
7378830Miniature modified Faraday cup for micro electron beams
A micro beam Faraday cup assembly includes a refractory metal layer with an odd number of thin, radially positioned traces in this refractory metal layer. Some of the radially positioned traces are located at the edge of the micro modified Faraday cup body and some ...
05/27/2008
7375538Method of inspecting pattern and inspecting instrument
Electron beam is irradiated to a wafer in the midst of steps at predetermined intervals by a plurality of times under a condition in which a junction becomes rearward bias and a difference in characteristic of a time period of alleviating charge in the rearward bias...
05/20/2008
7375505Method and apparatus for testing function of active microstructural elements and method for producing microstructural elements using the test method
A method and an apparatus for testing the function of a plurality of microstructural elements by irradiation with particle radiation. All of the microstructural elements detected as malfunctioning are listed in a first error list in a first test sequence. The micros...
05/20/2008
7372051Electric charged particle beam microscopy, electric charged particle beam microscope, critical dimension measurement and critical dimension measurement system
Magnification errors are reduced in the required range of magnification in electric charged particle beam application apparatuses and critical dimension measurement instruments. To achieve this, a first image, whose magnification for the specimen is actually measure...
05/13/2008
7372283Probe navigation method and device and defect inspection device
A probe navigation method, a navigation device, and a defect inspection device wherein in a charged particle beam system provided with probes for electrical characteristics evaluation, probing can be easily carried out regardless of the equipment user's level of ski...
05/13/2008
7368713Method and apparatus for inspecting semiconductor device
A method and apparatus for inspecting a wafer during a semiconductor device fabrication process. The apparatus performs, only via observation from the wafer's top surface, inspection and quantitative evaluation of a portion that is in the shadow of an incident elect...
05/06/2008
7368925Probe station with two platens
A probe station for testing a device under test. A first platen supporting an electrical probe. A chuck supporting the device under test. A second platen supporting an optical probe. The first platen and the second platen positioned above the device under test. A pe...
05/06/2008
7365324Testing apparatus using charged particles and device manufacturing method using the testing apparatus
A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source 25•1, th...
04/29/2008
7365322Method and apparatus for arranging recipe of scanning electron microscope and apparatus for evaluating shape of semiconductor device pattern
In order to provide an imaging-recipe arranging or creating apparatus and method adapted so that selection rules for automatic arrangement of an imaging recipe can be optimized by teaching in a SEM apparatus or the like, the imaging-recipe arranging or creating appa...
04/29/2008
7362123Inspection apparatus for thin film transistor substrate
An inspection apparatus for a TFT substrate formed with a plurality of pixels, includes a reference substrate being opposite to and spaced from the TFT substrate and formed with a plurality of reference patterns corresponding to the pixels, a power supply to supply ...
04/22/2008
7358748Methods and systems for determining a property of an insulating film
A method for determining a property of an insulating film is provided. The method may include obtaining a charge density measurement of the film, a surface voltage potential of the film relative to a bulk voltage potential of the substrate, and a rate of voltage dec...
04/15/2008
7358877Obsolescence mitigation for electron bombarded semiconductor tubes in programmable waveform digitizers
Method for replacing Electron Bombarded Semiconductor (EBS) tubes in a waveform digitizer having an analog input interface and a digital output interface, the EBS tubes being interposed between the analog input interface and the digital output interface, in which th...
04/15/2008
7355418Configurable prober for TFT LCD array test
An improved prober for an electronic devices test system is provided. The prober is “configurable,” meaning that it can be adapted for different device layouts and substrate sizes. The prober generally includes a frame, at least one prober bar having a first end...
04/08/2008
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